The roles of the dielectric constant and the relative level of conduction band of high-k composite with Si in improving the memory performance of charge-trapping memory devices
The memory structures Pt/Al{sub 2}O{sub 3}/(TiO{sub 2}){sub x}(Al{sub 2}O{sub 3}){sub 1−x}/Al{sub 2}O{sub 3}/p-Si(nominal composition x = 0.05, 0.50 and 0.70) were fabricated by using rf-magnetron sputtering and atomic layer deposition techniques, in which the dielectric constant and the bottom of the conduction band of the high-k composite (TiO{sub 2}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} were adjusted by controlling the partial composition of Al{sub 2}O{sub 3}. With the largest dielectric constant and the lowest deviation from the bottom of the conduction band of Si, (TiO{sub 2}){sub 0.7}(Al{sub 2}O{sub 3}){sub 0.3} memory devices show the largest memory window of 7.54 V, the fast programming/erasing speed and excellent endurance and retention characteristics, which were ascribed to the special structural design, proper combination of dielectric constant and band alignment in the high-k composite (TiO{sub 2}){sub 0.7}(Al{sub 2}O{sub 3}){sub 0.3}.