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DOE OSTI2021

Doping evolution of the Mott–Hubbard landscape in infinite-layer nickelates

The recent observation of superconductivity in N d 0.8 S r 0.2 N i O 2 has raised fundamental questions about the hierarchy of the underlying electronic structure. Calculations suggest that this system falls in the Mott–Hubbard regime, rather than the charge-transfer configuration of other nickel oxides and the superconducting cuprates. Here, we use state-of-the-art, locally resolved electron energy-loss spectroscopy to directly probe the Mott–Hubbard character of N d 1 − x S r x N i O 2 . Upon doping, we observe emergent hybridization reminiscent of the Zhang–Rice singlet via the oxygen-projected states, modification of the Nd 5d states, and the systematic evolution of Ni 3d hybridization and filling. These experimental data provide direct evidence for the multiband electronic structure of the superconducting infinite-layer nickelates, particularly via the effects of hole doping on not only the oxygen but also nickel and rare-earth bands.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Doping-induced spin reorientation in kagome magnet TmMn 6 ⁢Sn 6

The kagome-lattice compounds RMn 6 Sn 6 (R is a rare-earth element), where the Mn atoms form a kagome net in the basal plane, are currently attracting a great deal of attention as they have been shown to host complex magnetic textures and electronic topological states strongly sensitive to the choice of the R atom. Among the magnetic R atoms, TmMn 6 Sn 6 orders with the easy-plane magnetization forming a complex magnetic spiral along the c axis. Previous neutron studies carried out on polycrystalline samples found that Ga doping changes the magnetic anisotropy from easy-plane to easy-axis. Here, in this study, we present magnetic and magnetotransport measurements on a single crystal and first-principles calculations in the doping series of TmMn 6 Sn 6-x Ga x . We find that the magnetic properties are highly sensitive even to a small concentration of Ga. With minimal Ga substitution, the easy-plane anisotropy is maintained, which gradually changes to the easy-axis anisotropy with increasing Ga. We discuss these observations with respect to the effect of Ga doping on magnetocrystalline anisotropy and Tm crystal field.

Gazzah, Mohamed El [University of Notre Dame, IN (↗

DOE OSTI2021

Molecular dopants: Tools to control the electronic structure of metal halide perovskite interfaces

In the standard configurations of metal halide perovskite solar cell, the active layer, or absorber, follows a p-i-n or n-i-p electronic structure that is designed to enhance the separation and extraction of photo-induced charge carriers. The control of the Fermi level position across the film, between electron and hole transport layers, is therefore of paramount importance. Direct localized doping in metal halide perovskites being still elusive, the design of n-i-p and p-i-n structures has so far relied predominantly on surface and interface doping of the perovskite as well as on the control of the work function of the substrate and transport layers on which, or between which, the absorber is being placed. We provide here a short review of that work, emphasizing the fundamental studies of electronic structure performed on systems modified with organic molecular dopants. The review starts with a justification for the effectiveness of interface doping, based on the ability to move the Fermi level across the gap of the perovskite. We then review work done on the deposition of molecular oxidants and reductants on perovskite surfaces, including the mitigation of the surface states, and the impact of these dopants on energy level alignment with substrate and charge transport layers. The second part of the review focuses on the use of molecular dopants to either modify the work function of electron or hole transport layers to establish the boundary conditions for a p-i-n or n-i-p structure, or to enhance the conductivity of these layers in order to facilitate charge carrier extraction. Final considerations are also given on recent work on bulk doping of the perovskite layer with molecular dopants.

14 SOLAR ENERGY↗

DOE OSTI2017

Enhanced visible to near infrared downshifting in Ce{sup 3+}/Yb{sup 3+}-co-doped yttrium aluminum garnet through Pr{sup 3+} doping

Graphical abstract: In order to achieve improved near infrared downshifting, we have investigated the effect of Pr{sup 3+} doping on the energy transfer efficiency from Ce{sup 3+} to Yb{sup 3+} in the YAG host. - Highlights: • Synthesis and characterization of tri-doped Y{sub 3}Al{sub 5}O{sub 12} (YAG). • Efficient energy transfer in YAG:Ce{sup 3+}, Pr{sup 3+}, Yb{sup 3+}. • Discussion of mechanism of energy transfer in tri-doped host. • Potential application in c-Si solar cell. - Abstract: Novel YAG:Ce{sup 3+}, Pr{sup 3+}, Yb{sup 3+} phosphors were synthesized using a high temperature solid state reaction method. The XRD patterns revealed that the obtained samples belong to the single phase YAG. The optical spectra demonstrated that Pr{sup 3+} could be a bridge to facilitate the energy transfer from Ce{sup 3+} to Yb{sup 3+} in the YAG host. Blue light excited Ce{sup 3+} and a yellow emission from Ce{sup 3+} together with a near infrared emission of Yb{sup 3+} was obtained. The effect of Pr{sup 3+} doping on the energy transfer efficiency was explored. When the doping concentration of Pr{sup 3+} increased, the yellow emission intensities of Ce{sup 3+} decreased and the near infrared emission intensity of Yb{sup 3+} increased monotonously. Hence, the efficiency of energy transfer from Ce{sup 3+} to Yb{sup 3+} is enhanced by the addition of Pr{sup 3+}, implying that the YAG:Ce{sup 3+}, Pr{sup 3+}, Yb{sup 3+} phosphors are promising downshifting materials and have the potential to be used in Si-based solar cells.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Two-component electronic phase separation in the doped Mott insulator Y 1-x Ca x TiO 3

One of the major puzzles in condensed matter physics has been the observation of a Mott-insulating state away from half-filling. Several theoretical proposals aimed to elucidate this phenomenon have been put forth, a notable one being phase separation and an associated percolation-induced Mott insulator-metal transition. In the present work we study the prototypical doped Mott-insulating rare-earth titanate YTiO 3 , in which the insulating state survives up to a large hole concentration of 35%. Single crystals of Y 1-x Ca x TiO 3 with 0 ≤ x ≤ 0.5, spanning the insulator-metal transition, are grown and investigated. Using x-ray absorption spectroscopy, a powerful technique capable of probing element-specific electronic states, we find that the primary effect of hole doping is to induce electronic phase separation into hole-rich and hole-poor regions. The data reveal the formation of electronic states within the Mott-Hubbard gap, near the Fermi level, which increase in spectral weight with increasing doping. From a comparison with DFT+U calculations, we infer that the hole-poor and hole-rich components have charge densities that correspond to the insulating x = 0 and metallic x ~ 0.5 states, respectively, and that the new electronic states arise from the metallic component. Our results indicate that the doping-induced insulator-metal transition in Y 1-x Ca x TiO 3 is indeed percolative in nature, and thus of inherent first-order character.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1975

Addition of oxygen to and distribution of oxides in tantalum alloy T-111 at low concentrations

Oxygen was added at 820 and 990 C at an oxygen pressure of about .0003 torr. The technique permitted predetermined and reproducible oxygen doping of the tantalum alloy (T-111). Based on the temperature dependency of the doping reaction, it was concluded that the initial rates of oxygen pickup are probably controlled by solution of oxygen into the T-111 lattice. Although hafnium oxides are more stable than those of tantalum or tungsten, analyses of extracted residues indicate that the tantalum and tungsten oxides predominate in the as-doped specimens, presumably because of the higher concentrations of tantalum and tungsten in the alloy. However, high-temperature annealing promotes gettering of dissolved oxygen and oxygen from other oxides to form hafnium oxides. Small amounts of tantalum and tungsten oxides were still present after high temperature annealing. Tungsten oxide (WO3) volatilizes slightly from the surface of T-111 at 990 C but not at 820 C. The vaporization of WO3 has no apparent effect on the doping reaction.

Stecura, S.↗

DOE OSTI2023

Third-order Hall effect in the surface states of a topological insulator

Time reversal and inversion symmetric materials fail to yield linear and nonlinear responses since they possess net zero Berry curvature. However, higher-order Hall response can be generated in these systems upon constraining the crystalline symmetries. Motivated by the recently discovered third-order Hall (TOH) response mediated by Berry connection polarizability, namely, the variation of the Berry connection with respect to an applied electric field, here, we investigate the existence of such a Hall effect in the surface states of hexagonal warped topological insulators (e.g., Bi 2 Te 3 ) under the application of only electric field. Using the semiclassical Boltzmann formalism, we investigate the effect of tilt and hexagonal warping on the Berry connection polarizability tensor and, consequently, the TOH effect, provided the Dirac cone remains gapless. We find that the magnitude of the response increases significantly with increasing tilt strength and warping, and therefore, they can provide the tunability of this effect. In addition, we also explore the effect of chemical doping on the TOH response in this system. Interestingly, we show, based on the symmetry analysis, that the TOH can be the leading-order response in this system, which can directly be verified in experiments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2025

Reversible Phase Transitions Enable Cyclic Isothermal CO 2 Capture in Redox‐Activated Perovskite‐Structured Sorbents

Sorption‐enhanced steam reforming and gasification using CO 2 sorbents enable the production of H 2 ‐rich syngas from carbonaceous feedstocks but are limited by significant temperature swings and sintering‐induced activity loss. Perovskite‐structured oxides are presented herein as sintering‐resistant, redox‐activated isothermal CO 2 sorbents capable of overcoming these challenges by releasing lattice oxygen to partially oxidize the carbonaceous feedstock while capturing CO 2 , shifting equilibrium toward H 2 production. Building on this, the structural and thermodynamic impact of Fe doping on the CO 2 sorption properties of SrMn 1‐ x Fe x O 3‐ δ is investigated for sorption‐enhanced reforming. Experimental results demonstrate that these sorbents enable isothermal production of high‐quality, H 2 ‐enriched syngas from carbonaceous feedstocks. Laboratory and synchrotron‐based powder X‐ray diffraction analyses, coupled with density functional theory calculations, reveal the structural dynamics and energy landscape of the SrMn 1‐ x Fe x O 3‐ δ perovskite system under reaction conditions, elucidating the solid‐state reaction pathway and the effect of Fe doping on the extent of carbonation.

CO2 capture↗

DOE OSTI2023

Fe-single-atom catalyst nanocages linked by bacterial cellulose-derived carbon nanofiber aerogel for Li-S batteries

Li-S battery (LSB) is promising for achieving high capacity. Still, its development is hindered by the complex redox process with sluggish kinetics and particularly the resulting lithium polysulfides (LiPS) shuttle effects. Single-atom catalysts (SACs), with their maximized atom utilization, could effectively chemisorb soluble LiPSs and expedite the sulfide conversion reaction kinetics. Here we report incorporating Fe single metal atom catalyst (Fe-SAC) in the sulfur cathode design and its electrocatalytic effects. Fe-doped ZIF-8 nanocages were introduced into a cheap biomass bacteria cellulose. A pyrolysis process converted them into an aerogel structure with Fe-SAC-functionalized N-doped carbon nanocages linked by a carbon nanofiber network (FeSA-NC@CBC), which was applied as a scaffold to fabricate freestanding and binder-free sulfur cathodes. He we conducted electrochemical measurements to reveal Fe-SAC functions including lowering energy barriers for S 8 reduction to liquid-phase LiPSs and further to solid-phase Li 2 S 2 /Li 2 S and accelerating Li 2 S 2 /Li 2 S nucleation and deposition, as corroborated by our theoretical calculation results. Benefiting from the synergistic effects of highly active Fe-SAC and three-dimensional conductive network, the sulfide reaction kinetics is improved, which can diminish LiPS shuttle effects and therefore improve LBS rate performance and cycling stability. Accordingly, the fabricated FeSA-NC@CBC composite cathode delivers an excellent rate capability at 2C with a reversible capacity of 840 mAh/g and a long-term cyclic stability of 800 mAh/g at 1C after 500 cycles.

25 ENERGY STORAGE↗

DOE OSTI2024

Optimization of Sb-doped CdSeTe Solar Cells

The effect of high-temperature annealing (HTA) treatments and Cd-excess during the in-situ doping of CdSeTe:Sb is investigated. Optimized treatments eliminate the wurtzite phase from the as-deposited CdSeTe layer, while facilitating Se intermixing and grain size enhancement before CdCl2 treatment. The improved device stack quality results in a VOC improvement of 250 mV. VOC is further improved by tuning the Cd/Sb flux ratio during CdSeTe:Sb deposition. The lowest defect concentration is achieved at Cd/Sb of 1.4:1, which produced the best VOC CdSeTe:Sb cell with VOC = 849mV, despite a decreased carrier concentration due to the harsh CdCl2 treatment.

14 SOLAR ENERGY↗

DOE OSTI2018

Self-compensation induced vacancies for significant phonon scattering in InSb

Here, phonon scattering by point defects via mass differences and strain fluctuations could effectively reduce the lattice thermal conductivity. The atomic mass difference can be maximized by introducing the vacancies thus leading to a significant phonon scattering. Usually, the vacancies are introduced by tuning the stoichiometry or forming solid solution with certain compound that contains intrinsically high concentration of vacancies. In this work, we demonstrate that vacancies can be effectively induced by the self-compensation effect via chemical doping. Indium (In) vacancies in InSb were induced by Te-doping and a substantial reduction in thermal conductivity was observed. Room temperature lattice thermal conductivity of the melted and then hot-pressed InSb (without In vacancies) is ~ 14.5 W m –1 K –1 but only ~ 3.8 W m –1 K –1 for InSb 0.96 Te 0.04 (with In vacancies), a reduction of ~ 74%. The advantage of using this strategy for phonon engineering lies in the fact that a substantial reduction in thermal conductivity can be achieved even when the dopant concentration is rather low. Since the self-compensation effect is widely observed in different compounds, it indicates that the vacancy engineering strategy used here is also applicable to a variety of other materials to effectively reduce the lattice thermal conductivity.

36 MATERIALS SCIENCE↗

DOE OSTI2017

Magnetic and magnetocaloric properties of HoCr O 3 tuned by selective rare-earth doping

Rare-earth chromites ( R Cr O 3 ) are an important subclass of functional materials with interesting magnetic, electrical, and catalytic properties that make them promising for various applications. In this paper, we report comparisons on the structural and magnetic properties of HoCr O 3 with those of H o 0.67 T m 0.33 Cr O 3 and H o 0.67 G d 0.33 Cr O 3 powder samples, which were doped by T m 3 + (or G d 3 + ) ions at the A -site with ionic radius smaller (or larger) than that of H o 3 + ion. The structural properties of the samples were characterized by x-ray diffraction, Raman spectroscopy, and scanning electron microscopy carried out at ambient. The band gaps of the three samples were determined by analyzing their ultraviolet Vis spectra. Magnetic studies carried out from 5 K to 300 K show that the Néel temperature ( T N Cr , where C r 3 + ions order) increases with an increase in the average A -site ( R -site) ionic radius, tolerance factor, and Cr1-O1-Cr1 bond angle but decreases with an increase in the orthorhombic strain factor. In addition, the application of external hydrostatic pressure was found to enhance T N Cr of HoCr O 3 , similar to the effect observed by doping HoCr O 3 with G d 3 + ions. These changes in T N Cr with A -site doping and hydrostatic pressure are related to changes in C r 3 + - C r 3 + exchange coupling resulting from changes in the Cr1-O1-Cr1 bond angle and Cr1-O1 bond lengths, respectively. Temperature dependent paramagnetic susceptibility data of the samples was fitted to the modified Curie-Weiss law that included the Dzyloshinskii-Moriya interaction. Isothermal magnetization data showed that the magnetic behavior of the samples changes from canted antiferromagnetic at low temperatures to paramagnetic at higher temperatures. The large magnetocaloric entropy change was observed in HoCr O 3 , which was enhanced by Gd doping but lowered by Tm doping, showing its tunability by A -site doping. Correlation between magnetoelectric properties and magnetization is discussed.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Relationship between the Optical Damage Resistance and Radiation Hardness and the Influence of Threshold Effects on the Radiation Hardness of ZnO-Doped LiNbO{sub 3} Crystals

The radiation hardness and optical characteristics of beta-and gamma-irradiated LiNbO{sub 3}〈ZnO〉 crystals have been studied in a wide range of doping levels: ~0.04–5.9 mol % ZnO. The optical absorption (transmission) of the beta-and gamma-irradiated LiNbO{sub 3}〈ZnO〉 crystals has been evaluated as a function of the type and dose of radiation and dopant concentration. The optical damage resistance and radiation hardness of the crystals have been shown to be interrelated and depend on threshold effects in the LiNbO{sub 3}〈ZnO〉 crystals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2017

Enhanced photocatalytic activity of Te-doped Bi{sub 2}MoO{sub 6} under visible light irradiation: Effective separation of photogenerated carriers resulted from inhomogeneous lattice distortion and improved electron capturing ability

Te-doped Bi{sub 2}MoO{sub 6} photocatalyst was hydrothermally synthesized, and nonmetal atoms Te were homogeneously incorporated into Bi{sub 2}MoO{sub 6} lattice with the substitution of Te{sup 4+} to Mo{sup 6+}. With increasing Te-doping concentration in Bi{sub 2}MoO{sub 6}, no detectable band-gap narrowing but more and more severe inhomogeneous lattice distortions were determined. The activity of Bi{sub 2}MoO{sub 6} photocatalyst was evaluated through methylene blue degradation under visible light irradiation (λ>410 nm) and was greatly enhanced by Te-doping. When Te-doped Bi{sub 2}MoO{sub 6} was synthesized at Te/Mo molar ratio of 7.5%, a maximum first-order rate constant of methylene blue degradation was obtained. The inhomogeneous lattice distortion generated an internal dipole moment, and the holes generated with the substitution of Te{sup 4+} to Mo{sup 6+} acted as the capturing centers of photogenerated electrons, thus the effective separation of photogenerated carriers was facilitated to result in a relatively high concentration of holes on the surface of Te-doped Bi{sub 2}MoO{sub 6} to be favorable for the efficient methylene blue degradation. - Graphical abstract: With the substitution of Te{sup 4+} to Mo{sup 6+}, effective separation of photogenerated carriers resulted from inhomogeneous lattice distortion and improved electron capturing ability is achieved to be responsible for enhanced photocatalytic activity of Te-doped Bi{sub 2}MoO{sub 6}. - Highlights: • Nonmetal Te is incorporated into Bi{sub 2}MoO{sub 6} with the substitution of Te{sup 4+} to Mo{sup 6+}. • Revealing inhomogeneous lattice distortion and improved electron capturing ability. • Effective separation of photogenerated carriers in Te-doped Bi{sub 2}MoO{sub 6} is achieved. • The mechanism of methylene blue degradation over Te-doped Bi{sub 2}MoO{sub 6} is proposed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2017

The scaffold protein RACK1 is a target of endocrine disrupting chemicals (EDCs) with important implication in immunity

We recently demonstrated the existence of a complex hormonal balance between steroid hormones in the control of RACK1 (Receptor for Activated C Kinase 1) expression and immune activation, suggesting that this scaffold protein may also be targeted by endocrine disrupting chemicals (EDCs). As a proof of concept, we investigated the effect of the doping agent nandrolone, an androgen receptor (AR) agonist, and of p,p′DDT (dichlorodiphenyltrichloroethane) and its main metabolite p,p′DDE (dichlorodiphenyldichloroethylene), a weak and strong AR antagonist, respectively, on RACK1 expression and innate immune response. In analogy to endogenous androgens, nandrolone induced a dose-related increase in RACK1 transcriptional activity and protein expression, resulting in increased LPS-induced IL-8 and TNF-α production and proliferation in THP-1 cells. Conversely, p,p′DDT and p,p′DDE significantly decrease RACK1 expression, LPS-induced cytokine production and CD86 expression; with p,p′DDE exerting a stronger repressor effect than p,p′DDT, consistent with its stronger AR antagonistic effect. These results indicate that RACK1 could be a relevant target of EDCs, responding in opposite ways to agonist or antagonist of AR, representing a bridge between the endocrine system and the innate immune system. - Highlights: • RACK1 expression can be induced by AR agonists with a consequent enhancement of the response to LPS. • RACK1 can be negatively modulated by the AR antagonists DDT and its main metabolite p,p′DDE. • RACK1 can be a relevant target of EDCs, representing a bridge between the endocrine system and the immune system.

60 APPLIED LIFE SCIENCES↗

DOE OSTI2021

High‐Efficiency Ion‐Exchange Doping of Conducting Polymers

Abstract Molecular doping—the use of redox‐active small molecules as dopants for organic semiconductors—has seen a surge in research interest driven by emerging applications in sensing, bioelectronics, and thermoelectrics. However, molecular doping carries with it several intrinsic problems stemming directly from the redox‐active character of these materials. A recent breakthrough was a doping technique based on ion‐exchange, which separates the redox and charge compensation steps of the doping process. Here, the equilibrium and kinetics of ion exchange doping in a model system, poly(2,5‐bis(3‐alkylthiophen‐2‐yl)thieno(3,2‐b)thiophene) (PBTTT) doped with FeCl 3 and an ionic liquid, is studied, reaching conductivities in excess of 1000 S cm −1 and ion exchange efficiencies above 99%. Several factors that enable such high performance, including the choice of acetonitrile as the doping solvent, which largely eliminates electrolyte association effects and dramatically increases the doping strength of FeCl 3 , are demonstrated. In this high ion exchange efficiency regime, a simple connection between electrochemical doping and ion exchange is illustrated, and it is shown that the performance and stability of highly doped PBTTT is ultimately limited by intrinsically poor stability at high redox potential.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Doping Induced Magnetic and Electronic Phase Transitions in the Ferrimagnetic Half-Metallic Mn 4 Al 11 Compound

The future of spintronics and semiconductor applications demands materials with tailored electronic and magnetic properties. Here, this study uses density functional theory to investigate the electronic structure of the half-metallic compound Mn 4 Al 11 under uniaxial strain and in its Ge-substituted derivatives. Strain analysis shows that although the half-metallic band gap collapses under strain beyond −2%, the ferrimagnetic character remains stable. Ge substitution at six inequivalent Al sites in Mn 4 Al 11 results in varying degrees of metallicity and magnetic properties. Substitution at Al═ (000) induces a metal-to-insulator transition with an indirect semiconducting gap of 0.14 eV. Bonding and hybridization analyses reveal that local Mn–Al interactions due to Ge substitution significantly modify the local electronic structure, causing both electronic and magnetic phase transitions. This work highlights the effectiveness of substitutional doping in tuning half-metallicity and magnetic properties in inorganic solids, enabling the design of materials for future technological applications.

alloys↗

DOE OSTI2021

Tablelike magnetocaloric effect and enhanced refrigerant capacity in EuO 1- δ thin films

The effect of electron doping of EuO 1- δ thin films through oxygen vacancies ( δ = 0, 0.025, and 0.09) upon the magnetocaloric response is presented here. The films each showed a paramagnetic to ferromagnetic transition around 65 K, with an additional magnetic ordering transition at higher temperatures in the oxygen deficient samples. All transitions are observed to be of second order. A maximum magnetic entropy change of 6.4 J/kg K over a field change of 2 T with a refrigerant capacity of 223 J/kg was found in the sample with δ = 0, and in all cases the refrigerant capacities of the thin films under study were found to exceed that reported for bulk EuO. Adjusting the oxygen content was shown to produce tablelike magnetocaloric effects, desirable for ideal Ericsson-cycle magnetic refrigeration. These films are thus excellent candidates for small-scale magnetic cooling technology in the liquid nitrogen temperature range.

36 MATERIALS SCIENCE↗