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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Optimizing Nanoemitters using Quasi-Aperiodicity and Photoelectrochemical Etching.
Abstract not provided.
Highly Anisotropic Crystallographic Etching for Fabrication of High-Aspect Ratio GaN Nanostructures.
Abstract not provided.
Chemical Etching of GaN in Hydroxide-Based Solutions: Understanding and Predicting Facet Evolution.
Abstract not provided.
Metal Assisted Chemically Etched Silicon Nanowires as Anodes.
Abstract not provided.
Dry etch method for texturing silicon and device
A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.
Determining BCP etch rate and uniformity in high luminosity LHC crab cavities
N/A
InGaN Quantum Dots by Quantum Size Controlled Photoelectrochemical Etching.
Abstract not provided.
Facet Evolution in GaN Chemical Etching for 3D Structures and Optical Microcavities.
Abstract not provided.
InGaN Quantum Dots by Quantum Size Controlled Photoelectrochemcial Etching.
Abstract not provided.
Optimizing Nanoemitters using Quasi-Aperiodicity and Photoelectrochemical Etching (invited).
Abstract not provided.
Selective, electrochemical etching of a semiconductor
Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.
A Photoemission Study of Au,GE, and O2 Deposition on NH4F Etched Si(111)
Explore the source record for details and available documents.
Top-Down Etching of Three-Dimensional High Aspect Ratio GaN Nanostructures (invited).
Abstract not provided.
Top-Down Etching of GaN Nanostructures for Optoelectronics and Beyond (invited).
Abstract not provided.
Extending the Aspect Ratio of Etched Silicon for Precision Electro-coating with Gold to Fabricate XPCI Analyzer Gratings.
Abstract not provided.