Probing Gluon Spin-Momentum Correlations in Transversely Polarized Protons through Midrapidity Isolated Direct Photons in p ↑ + p Collisions at s = 200 GeV
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The nuclear two-photon or double-gamma (2 γ ) decay is a second-order electromagnetic process whereby a nucleus in an excited state emits two gamma rays simultaneously. To be able to directly measure the 2 γ decay rate in the low-energy regime below the electron-positron pair-creation threshold, we combined the isochronous mode of a storage ring with Schottky resonant cavities. The newly developed technique can be applied to isomers with excitation energies down to ~100 keV and half-lives as short as ~10 ms. The half-life for the 2 γ decay of the first-excited 0 + state in bare 72 Ge ions was determined to be 23.9(6) ms, which strongly deviates from expectations.
This work systematically explores 19 unique configurations of the close-associate Ga–O divacancies (V Ga V O ) in β–Ga 2 O 3 , including their complexes with H impurities, using hybrid functional calculations. Interestingly, most configurations are found to retain the negative-U behavior of V O , as they exhibit a thermodynamic (–/3–) charge-state transition level energetically located in the upper part of the band gap, where the 3– charge state is associated with the formation of a Ga–Ga dimer. The energy positions of the thermodynamic (–/3–) charge-state transition levels divide the divacancy configurations into three different groups, which can be understood from the three possible Ga–Ga dimerizations resulting from the tetrahedral and octahedral Ga sites. The relative formation energies of the different divacancy configurations, and hence the electrical activity of the divacancies, is found to depend on the Fermi-level position, and the energy barriers for transformation between different divacancy configurations are explored from nudged elastic band calculations. Hydrogenation of the divacancies is found to either passivate their negative-U charge-state transition levels or shift them down in Fermi level position, depending on whether the H resides at V O or forms an O–H bond at V Ga , respectively. Finally, the divacancy is discussed as a potential origin of the so-called E$^{*}_{2}$ center previously observed by deep-level transient spectroscopy.
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In a controlled cyber-physical network, such as a power grid, any malicious data injection in the sensor measurements can lead to widespread impact due to the actions of the closed-loop controllers. While fast identification of the attack signatures is imperative for reliable operations, it is challenging to do so in a large dynamical network with tightly coupled nodes. A particularly challenging scenario arises when the cyberattacks are strategically launched during a grid stress condition, caused by non-malicious physical disturbances.
This paper focusses on the development of a bidirectional DC/DC converter based on dual active bridge (DAB) converter for 1 kV class fast charger applications. A novel modulation technique is proposed to achieve zero voltage switching across the entire operating range of a vehicle battery system. The topology includes a tap changer to support multiple class of vehicles. The full range ZVS operation will allow high efficiency operation even at light load, reduced dv/dt to improve transformer insulation lifetime and mitigate EMI impact. A 1 kV class, 150 A prototype was developed to validate the proposed concepts.
The privacy question is one that has only begun to be addressed. While on one hand, many of the staunchest privacy advocates have argued for relaxation of privacy controls in order to develop better tests, “back to work” protocols, and vaccines and other treatments, the same advocates point out that any loss of privacy for the public good should be temporary, transparent, necessary, proportionate, and follow a due process. What should solutions look like for data gathering, sharing, use, and disposal; or for protocols requiring strong individual identity verification and validation?
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High-frequency (HF) transformers are an essential part of many power electronic devices. The performance and behavior of HF transformers can greatly affect the efficiency and performance of all systems, particularly, from a parasitic parameter point of view. In this article, HF transformers' parasitic parameters, such as leakage inductances and parasitic capacitances, are analyzed using a novel analytical method, finite element method (FEM), and experimental measurements of different structures and winding arrangements. Also, the magnetic field, electric field, electric displacement field, and electric potential distribution within the transformers are simulated and analyzed. Four different HF transformers with E and U cores with different windings are designed and analyzed. Investigation outcomes help to classify structures according to the trade-off between leakage inductances and series parasitic capacitances. This information can later be used for the optimal selection and design of transformers as a function of their operating frequency for any power rating and voltage level. Moreover, 3-D FEM and experimental results validate the proposed methodology to be used for designing HF transformers in high-voltage/power applications.
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