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At least 631 records · Page 35

Modified Heisenberg model for the zig-zag structure in multiferroic RMn{sub 2}O{sub 5}

The class of RMn{sub 2}O{sub 5} (R = Ho, Tb, Y, Eu) compounds offers multiferroic properties where the refined magnetic zig-zag order breaks the inversion symmetry. Varying the temperature, the system undergoes a magnetic and a subsequent ferroelectric phase transition where the ferroelectricity is magnetically induced. We propose a modified anisotropic Heisenberg model that can be used as a tractable analytical model studying the properties of those antiferromagnetic zig-zag spin chains. Based on a finite temperature Green's function method, it is shown that the polarization is induced solely by different exchange couplings of the two different Mn{sup 4+} and Mn{sup 3+} magnetic ions. We calculate the excitation energy of the spin system for finite temperatures, which for its part determines the temperature dependent magnetization and polarization. The ferroelectric phase transition is manifested as a kink in the excitation energy. The variation of the polarization by an external magnetic field depends strongly on the direction of that field. Whereas, the polarization in b-direction increases with an external magnetic field as well in b-direction it can be switched for strong fields in a-direction. The results based on that modified Heisenberg model are in qualitative agreement with experimental data.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Hyperfine-induced hysteretic funnel structure in spin blockaded tunneling current of coupled vertical quantum dots at low magnetic field

We outline the properties of the hyperfine-induced funnel structure observed in the two-electron spin blockade region of a weakly coupled vertical double quantum dot device. Hysteretic steps in the leakage current occur due to dynamic nuclear polarization when either the bias voltage or the magnetic field is swept up and down. When the bias voltage is swept, an intriguing ∼3 mT wide cusp near 0 T appears in the down-sweep position, and when the magnetic field is swept, the current at 0 T can be switched from 'low' to 'high' as the bias is increased.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Self-Powering High Frequency Modulated SiC Power MOSFET Isolated Gate Driver

A novel implementation of an isolated gate driver for power switches is proposed in this study. The driver is bespoke designed for SiC power mosfet s. The proposal achieves the main driver characteristics—isolation capability, gate switching command, and power transfer to the secondary side by using a unique magnetic transformer. The resulting simple circuitry enables the integration of the driver into the power cell, achieving theoretical higher power density values of the final system. The principle of operation of the driver is described in detail. The original pulsewidth modulation signal is modulated with a pure ac square waveform under a two-level modulation scheme, that guarantees no saturation of the magnetic core. Here, the signal is then magnetically coupled to the secondary side, where it is rectified and reconstructed to effectively drive the target device. In addition, the steps needed to provide a suitable design taking into account the parameters of the target power switch are also detailed. The resulting driver is characterized and a prototype of the driver is built and tested. The main results of the driver performance on a SiC mosfet -based prototype are presented. Based on the analysis of these results, this study experimentally demonstrates the feasibility of the proposal.

25 ENERGY STORAGE↗

Frequency and energy characteristics of a Cu – Ne laser at different durations of the leading edge of the excitation pulse

The lasing characteristics of a copper vapour laser in a tube with forced heating, having a length of 50 cm and a diameter of 2 cm, excited by a train of pulses are investigated. Comparative studies of the frequency and energy characteristics of the laser are performed with a leading edge duration of the excitation pulse of ∼25 ns (when the capacitance discharges through a thyratron and a magnetic compression line) and ∼3 and 1 ns (using circuits with a high-speed switch – kivotron). It is shown that a decrease in the leading edge duration gives rise to an increase in the optimal pulse repetition rate up to ∼30 kHz, the generation efficiency up to 3.2 % and the generation power per unit length over 100 W m{sup −1}. The results obtained confirm the concept of limiting the frequency and energy characteristics of a copper vapour laser due to the insufficient rate of energy input into the plasma at high prepulse electron concentrations. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Magnetic structure of a non-centrosymmetric CePtSi 3

Neutron diffraction experiments have been performed on single crystalline samples of CePtSi 3 . We found that the incommensurate magnetic propagation vector τ 1 = (±0.283, 0, 0) in the phase I (2.2 ~ 4.8 K) switches to the commensurate vectors τ 2 = (±0.25, 0, 0) and τ 3 = (±0.25, 0, ±1) in the phase III (~ 2.8 K) at zero field. Although the magnetic structure of CePtSi 3 in the phase I is a spin density wave similar to those in CeRhSi 3 , CeIrSi 3 , and CePdSi 3 , the magnetic structure in the phase III is commensurate unlike other CeTSi 3 (T = Rh, Ir, Pd) compounds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Nanoscale analysis of dispersive ferroelectric domains in bulk of hexagonal multiferroic ceramics

Highlights: • Aberration corrected STEM is used to link ferroelectric properties of vacancy doped multiferroic LuMnO3 ceramics to lattice defects. • Nano-scale perturbation in lattice or chemistry provokes polarization switching or phase shift of ferroelectric domains. • Partial edge dislocations modify rule of 6 in topologically protected 6-fold vortices in hexagonal RMnO3 ceramics. • Chemistry shift/lattice distortions modify ferroelectric properties, domain size and polarization switching in multiferroic. • Change in ferroelectric properties results in modification of magnetic properties in magnetoelectric h-RMnO3 multiferroic. - Abstract: The atomic nature of topologically protected ferroelectric (FE) walls in hexagonal ReMnO{sub 3} oxides (R: Sc, Y, Er, Ho, Yb, Lu) creates an interesting playground to study effects of defects on domain walls. The 6-fold FE vortices in this multiferroic family lose the ordering by the rule of 6 in the presence of partial edge dislocations (PED) besides it can be modified by chemical doping. Therefore, it is essential to comprehend the cross coupling of FE walls and defects or vacancies in the lattice of multiferroics. Atomic resolution STEM is used to explore the correlative response of electrical polarization of FE domains in the presence of defects in multiferroic ceramics. Such level of resolution also allows the study of switching of FE domains on encounter of lattice defects. The driving force behind appearance of dispersed, small FE domains in images of piezo force microscopy is revealed by observation of lattice defects and FE boundaries simultaneously at the nano-scale. Planar defects and FE domain walls play their role of internal interfaces consequently such interplaying duly modifies the magnetic and FE properties of multiferroic oxides.

36 MATERIALS SCIENCE↗

A time domain based method for the accurate measurement of Q-factor and resonance frequency of microwave resonators

We present a novel method to determine the resonant frequency and quality factor of microwave resonators which is faster, more stable, and conceptually simpler than the yet existing techniques. The microwave resonator is pumped with the microwave radiation at a frequency away from its resonance. It then emits an exponentially decaying radiation at its eigen-frequency when the excitation is rapidly switched off. The emitted microwave signal is down-converted with a microwave mixer, digitized, and its Fourier transformation (FT) directly yields the resonance curve in a single shot. Being a FT based method, this technique possesses the Fellgett (multiplex) and Connes (accuracy) advantages and it conceptually mimics that of pulsed nuclear magnetic resonance. We also establish a novel benchmark to compare accuracy of the different approaches of microwave resonator measurements. This shows that the present method has similar accuracy to the existing ones, which are based on sweeping or modulating the frequency of the microwave radiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Highly-­laminated, high-­saturation-flux-­density, magnetic cores for on-­chip inductors in power converter applications

The objective of this project is development of a manufacturing process to realize thick highly-laminated metallic magnetic cores with suppressed eddy current losses for power applications and demonstration of integrated magnetic components using the process. The continual reduction in size and increase in functionality of portable electronic devices drives the development of ultracompact electrical power converters and therefore their associated inductors, which typically occupy the largest volume within the converter. This inductor size reduction can be achieved by increasing both the converter switching frequency as well as inductor operating flux density by utilizing appropriate magnetic core materials. Magnetically soft metallic alloys (e.g., NiFe and CoNiFe) are good core material candidates due to their superior magnetic properties (e.g., high saturation flux density and low coercivity) compared to conventional ferrite. However, to minimize eddy current losses, the core thickness is limited to the skin depth (typically less than 3 µm for 10 MHz operation); cores of this thickness are likely insufficient for handling high power (> 10W). Therefore, there is great interest in the development of highly-laminated metallic alloy cores with single lamination thickness in the sub-micron range to achieve suppressed eddy-current losses and high power handling capacity simultaneously. During the project, highly-laminated metallic alloy cores comprising up to 2000 layers of permalloy (Ni 80 Fe 20 ) or CoNiFe materials with single lamination thickness less than 1 µm have been fabricated based on automated multilayer electrodeposition technology compatible with CMOS manufacturing. The developed highly-laminated metallic cores preserve the high saturation flux density and low coercivity characteristics of metallic alloys, while suppressing eddy-current losses less than 1 W/cm3 at operation flux density of 0.5 T and frequency over 1 MHz. The developed highly-laminated metallic alloy cores have been further integrated into microfabricated windings to realize compact, on-chip inductors. Utilizing CMOS-compatible integration techniques, circular (toroid) and bar-shape (solenoid) microinductors have been fabricated exhibiting a constant inductance higher than 1 µH up to 50 MHz with peak quality factor as high as 35 at 5 MHz. The microfabricated inductor with highly-laminated core was tested in a power converter and demonstrated a converter efficiency of 93% at 5.5 MHz and 42 W under 100V input and 35V output operation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperature

Two-dimensional van der Waals (vdW) magnetic materials hold promise for the development of high-density, energy-efficient spintronic devices for memory and computation. Recent breakthroughs in material discoveries and spin-orbit torque control of vdW ferromagnets have opened a path for integration of vdW magnets in commercial spintronic devices. However, a solution for field-free electric control of perpendicular magnetic anisotropy (PMA) vdW magnets at room temperatures, essential for building compact and thermally stable spintronic devices, is still missing. Here, we report a solution for the field-free, deterministic, and nonvolatile switching of a PMA vdW ferromagnet, Fe 3 GaTe 2 , above room temperature (up to 320 K). We use the unconventional out-of-plane anti-damping torque from an adjacent WTe 2 layer to enable such switching with a low current density of 2.23 × 10 6 A cm –2 . This study exemplifies the efficacy of low-symmetry vdW materials for spin-orbit torque control of vdW ferromagnets and provides an all-vdW solution for the next generation of scalable and energy-efficient spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Domain-wall magnetoelectric coupling in multiferroic hexagonal YbFeO 3 films

Electrical modulation of magnetic states in single-phase multiferroic materials, using domain-wall magnetoelectric (ME) coupling, can be enhanced substantially by controlling the population density of the ferroelectric (FE) domain walls during polarization switching. In this work, we investigate the domain-wall ME coupling in multiferroic h-YbFeO 3 thin films, in which the FE domain walls induce clamped antiferromagnetic (AFM) domain walls with reduced magnetization magnitude. Simulation according to the phenomenological theory indicates that the domain-wall ME effect is dramatically enhanced when the separation between the FE domain walls shrinks below the characteristic width of the clamped AFM domain walls during the ferroelectric switching. Experimentally, we show that while the magnetization magnitude remains same for both the positive and the negative saturation polarization states, there is evidence of magnetization reduction at the coercive voltages. These results suggest that the domain-wall ME effect is viable for electrical control of magnetization.

42 ENGINEERING↗

Spin switches for compact implementation of neuron and synapse

Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to explore the possibility of a hardware neural network implementation using a spin switch (SS) as its basic building block. SS is a recently proposed device based on established technology with a transistor-like gain and input-output isolation. This allows neural networks to be constructed with purely passive interconnections without intervening clocks or amplifiers. The weights for the neural network are conveniently adjusted through analog voltages that can be stored in a non-volatile manner in an underlying CMOS layer using a floating gate low dropout voltage regulator. The operation of a multi-layer SS neural network designed for character recognition is demonstrated using a standard simulation model based on coupled Landau-Lifshitz-Gilbert equations, one for each magnet in the network.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A HV silicon vertical JFET: TCAD simulations

In the future ATLAS Inner Tracker detector (ITk), several silicon strip modules will be biased by a single High-Voltage (HV) line, so that a switch between each strip sensor and the HV line is required to disconnect faulty sensors. Such a switch must satisfy strict requirements, such as being radiation hard, being able to sustain high voltages in the OFF state and being able to operate in a high magnetic field. At Brookhaven National Laboratory we conceived a new kind of solid-state switch that can potentially meet all the specs: it is a HV silicon vertical JFET. Before designing and fabricating the JFET, we did a study using numerical TCAD simulations that demonstrate the feasibility of fabricating the device in a standard planar technology. As a result, we report such simulations, highlighting in particular a few key parameters to which the JFET performances are most sensitive.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Alternate current magnetic property characterization of nonstoichiometric zinc ferrite nanocrystals for inductor fabrication via a solution based process

We investigate the ac magnetic behavior of solution processable, non-stoichiometric zinc ferrite nanocrystals with a series of sizes and zinc concentrations. Nearly monodisperse Zn{sub x}Fe{sub 3−x}O{sub 4} nanocrystals (x = 0–0.25) with an average size ranging from 7.4 nm to 13.8 nm are synthesized by using a solvothermal method. All the nanocrystals are in a superparamagnetic state at 300 K, which is confirmed by Superconductive Quantum Interference Device magnetometry. Due to the doping of non-magnetic Zn{sup 2+} into A site of ferrite, the saturation magnetization of nanocrystals increases as the size and Zn concentration increases. The ac magnetic permeability measurements at radio frequencies reveal that the real part of the magnetic permeability of similarly sized ferrite nanocrystals can be enhanced by almost twofold as the Zn{sup 2+} doping level increases from 0 to 0.25. The integration of 12.3 nm Zn{sub 0.25}Fe{sub 2.75}O{sub 4} nanocrystals into a toroidal inductor and a solenoid inductor prepared via a simple solution cast process yields a higher quality factors than air core inductors with the same geometries up to 5 MHz and 9 MHz, respectively, which is in the regime of the switching frequencies for the advanced integrated power converters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Optimization of current waveform tailoring for magnetically driven isentropic compression experiments

The Thor pulsed power generator is being developed at Sandia National Laboratories. The design consists of up to 288 decoupled and transit time isolated capacitor-switch units, called “bricks,” that can be individually triggered to achieve a high degree of pulse tailoring for magnetically driven isentropic compression experiments (ICE) [D. B. Reisman et al., Phys. Rev. Spec. Top.–Accel. Beams 18, 090401 (2015)]. The connecting transmission lines are impedance matched to the bricks, allowing the capacitor energy to be efficiently delivered to an ICE strip-line load with peak pressures of over 100 GPa. Thor will drive experiments to explore equation of state, material strength, and phase transition properties of a wide variety of materials. We present an optimization process for producing tailored current pulses, a requirement for many material studies, on the Thor generator. This technique, which is unique to the novel “current-adder” architecture used by Thor, entirely avoids the iterative use of complex circuit models to converge to the desired electrical pulse. We begin with magnetohydrodynamic simulations for a given material to determine its time dependent pressure and thus the desired strip-line load current and voltage. Because the bricks are connected to a central power flow section through transit-time isolated coaxial cables of constant impedance, the brick forward-going pulses are independent of each other. We observe that the desired equivalent forward-going current driving the pulse must be equal to the sum of the individual brick forward-going currents. We find a set of optimal brick delay times by requiring that the L{sub 2} norm of the difference between the brick-sum current and the desired forward-going current be a minimum. We describe the optimization procedure for the Thor design and show results for various materials of interest.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Controlling the switching field in nanomagnets by means of domain-engineered antiferromagnets

Using soft x-ray spectromicroscopy, we investigate the magnetic domain structure in embedded nanomagnets defined in La 0.7 Sr 0.3 MnO 3 thin films and LaFeO 3 /La 0.7 Sr 0.3 MnO 3 bilayers. We find that shape-controlled antiferromagnetic domain states give rise to a significant reduction of the switching field of the rectangular nanomagnets. This is discussed within the framework of competition between an intrinsic spin-flop coupling and shape anisotropy. In conclusion, the data demonstrates that shape effects in antiferromagnets may be used to control the magnetic properties in nanomagnets.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetic phase dependence of the anomalous Hall effect in Mn 3 Sn single crystals

Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn 3 Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at T 1 = 275 K and T 2 = 200 K, below the antiferromagnetic phase transition at T N ≈ 420 K. The Hall conductivity in zero magnetic field is suppressed dramatically from 4.7 Ω -1 cm -1 to near zero below T 1 , coincident with the vanishing of the weak ferromagnetic moment. Finally, this illustrates that the large anomalous Hall effect arising from the Berry curvature can be switched on and off by a subtle change in the symmetry of the magnetic structure near room temperature.

36 MATERIALS SCIENCE↗