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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 631 records · Page 35
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

An apparatus is disclosed which includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a dc magnetron sputtering system. A gas inlet introduces various gases to the vacuum chamber and creates various gas plasma during the sputtering steps. The rotating turntables insure that the respective wafers are present under the sputtering guns for an average amount of time such that consistency in sputtering and deposition is achieved. By continuous and sequential processing of the wafers in a common vacuum chamber without removal, the adverse affects of exposure to atmospheric conditions are eliminated providing higher quality circuit contacts and functional device.

Routh, D. E.↗
NASA NTRS1984

Sputtering as a Technique for Applying Tribological Coatings

Friction and wear induced mechanical failures may be controlled to extend the life of tribological components through the interposition of selected solid materials between contacting surfaces. Thin solid films of soft and hard materials are appropriate to lower friction and enhance the wear resistance of precision tribo-elements. Thin film coating technologies that have been developed may be used to interpose thin solid layers between contacting surfaces to reduce friction or to extend wear life. Film deposition technologies developed include chemical vapor deposition (CVD) and physical vapor deposition (PVD). Sputter coating is a PVD process for thin film deposition. It allows close control of coating thickness and composition and is well-suited for the deposition of tribological coatings. In this paper, the utility of magnetron sputtering for the deposition of tribological coatings is examined. Experimental results obtained when coated bodies are tested under a number of tribological operating conditions are presented. It is shown that when film adhesion problems are resolved, sputtering can be an effective means of depositing tribological coatings.

S Ramalingam↗
NASA NTRS1985

Internal stresses in wear and corrosion resistant amorphous metallic coatings of (W/0.6/Re/0.4/)76B24 and (Mo/0.6/Ru/0.4/)82B18

Hard protective coatings in the W-Re-B and Mo-Ru-B alloy systems have been deposited by magnetron sputtering onto soda-lime glass and heat-treated AISI 52100 steel substrates. X-ray diffraction has confirmed the amorphous nature of the as-deposited coatings, and their crystallization temperatures were determined by differential thermal analysis to be 1000 and 790 C for W-Re-B and Mo-Ru-B coatings, respectively. Both coatings exhibit high microhardness; Mo-Ru-B, in addition, has excellent corrosion resistance by comparison with pure Mo at high anodic potentials. Attention is given to the influence of internal stresses on the protective properties of the coatings deposited under different conditions.

Thakoor, A. P.↗
NASA NTRS1986

Room-Temperature Deposition of NbN Superconducting Films

Films with high superconducting transition temperatures deposited by reactive magnetron sputtering. Since deposition process does not involve significantly high substrate temperatures, employed to deposit counter electrode in superconductor/insulator/superconductor junction without causing any thermal or mechanical degradation of underlying delicate tunneling barrier. Substrates for room-temperature deposition of NbN polymeric or coated with photoresist, making films accessible to conventional lithographic patterning techniques. Further refinements in deposition technique yield films with smaller transition widths, Tc of which might approach predicted value of 18 K.

Thakoor, S.↗
NASA NTRS1986

Low-Resistivity Zinc Selenide for Heterojunctions

Magnetron reactive sputtering enables doping of this semiconductor. Proposed method of reactive sputtering combined with doping shows potential for yielding low-resistivity zinc selenide films. Zinc selenide attractive material for forming heterojunctions with other semiconductor compounds as zinc phosphide, cadmium telluride, and gallium arsenide. Semiconductor junctions promising for future optoelectronic devices, including solar cells and electroluminescent displays. Resistivities of zinc selenide layers deposited by evaporation or chemical vapor deposition too high to form practical heterojunctions.

Stirn, R. J.↗
NASA NTRS1985

Refractory amorphous metallic (W/0.6/ Re/0.4/)76B24 coatings on steel substrates

Refractory metallic coatings of (W/0.6/ Re/0.4/)76B24 (WReB) have been deposited onto glass, quartz, and heat-treated AISI 52100 bearing steel substrates by dc magnetron sputtering. As-deposited WReB films are amorphous, as shown by their diffuse X-ray diffraction patterns; chemically homogeneous, according to secondary ion mass spectrometry (SIMS) analysis; and they exhibit a very high (approximately 1000 C) crystallization temperature. Adhesion strength of these coatings on heat-treated AISI 52100 steel is in excess of approximately 20,000 psi and they possess high microhardness (approximately 2400 HV50). Unlubricated wear resistance of such hard and adherent amorphous metallic coatings on AISI 52100 steel is studied using the pin-on-disc method under various loading conditions. Amorphous metallic WReB coatings, about 4 microns thick, exhibit an improvement of more than two and a half orders of magnitude in the unlubricated wear resistance over that of the uncoated AISI 52100 steel.

Thakoor, A. P.↗
NASA NTRS1985

Rolling contact fatigue behavior of Cu and TiN coatings on bearing steel substrates

The resistance of copper and TiN coatings on various bearing substrates to high-load rolling contact fatigue (RCF) is investigated. Special attention is given to the lubricating characteristics of copper deposited by ion plating, and the wear resistant characteristics of TiN deposited by ion plating and magnetron sputtering techniques. RCF samples of 440C and AMS 5749 bearing steels were coated. Sputter deposited and ion plated films were on the RCF samples in a range of thickness from about 2000 A to 2 microns. Results showed a marked improvement of the RCF for pure copper tested on 440C, but a degradation for copper on AMS 5749. It is also found that the 2000 A TiN films behave favorably on the 440C and AMS 5749 bearing steels at RCF stress levels of 786 ksi. Scanning electron microscopy, X-ray diffraction, and electron spectroscopy for chemical analysis were used during the investigation.

Hochman, R. F.↗
NASA NTRS1985

High T(c) superconducting NbN films deposited at room temperature

The dc reactive magnetron sputtering process yields stoichiometric NbN films with superconducting transition temperature T(c) as high as 15.7 K on substrates as varied as glass, glazed ceramic, fused quartz, and sapphire. These films posses fcc (B1) structure and (111) texture. The most dominant factors governing the formation of the transition metal nitrides are the relative metal and nitrogen fluxes incident on the substrate and the background argon pressure (which dictates the overall reactive sites and residence times for nitrogen).

Thakoor, S.↗
NASA NTRS1986

Low-temperature deposition of low resistivity ZnSe films by reactive sputtering

The use of reactive dc magnetron cosputtering of Zn and the dopant In in an H2Se/Ar gaseous mixture is described. It is observed that initial deposition using pure Zn targets produced yellowish transparent ZnSe films on glass with a film resistivity of 10 to the 8th ohms cm and deposition using a Zn target doped with a fixed 1 percent of In produced ZnSe films with resistivities of about 10,000 ohms cm. The improvement of film conductivity by optimizing the In content in the ZnSe films is discussed; the ZnSe resistivity dependence on In flux is studied. Optical absorption/transmission measurements reveal a photon energy band gap of 2.65 eV at room temperature and X-ray diffraction show highly oriented polycrystalline films on glass with the c axis parallel to the plane of the film. Compositional analysis was performed and the Zn/Se ratio is measure as 48.8/49.0 with an In concentration of 1.16 percent. ZnSe films deposited on glass and conducting SnO2-coated glass substrates with a resistance of 20 ohms cm and a substrate temperature of 120 C have been fabricated.

Stirn, R. J.↗
NASA NTRS1986

Room temperature deposition of superconducting NbN for superconductor-insulator-superconductor junctions

The deposition of stoichiometric B1-crystal-structure (111) NbN films on glass or sapphire substrates by reactive dc magnetron sputtering is reported. High-purity Ar-N2 mixtures are used in the apparatus described by Thakoor et al. (1985), and typical deposition parameters are given as background pressure about 10 ntorr, voltage -325 V, current 1 A, deposition rate 1.35 nm/s, film thickness 500 nm, P(Ar) 5-17 mtorr, initial P(N2) 2-6 mtorr, and room temperature. The N2 consumption-injection characteristics are studied and found to control NbN formation using well-conditioned Nb targets. Films with transition temperatures 15-16 K are obtained at P(Ar) = 12.9 + or - 0.2 mtorr and P(N2) = 3.7 + or - 0.1 mtorr. SIS junctions of area about 0.001 sq cm fabricated using the NbN films are shown to have I-V characteristics with nonlinearity parameter about 110 and NbN superconducting-gap parameter Delta = about 2.8 meV.

Thakoor, S.↗
NASA NTRS1986

Influence of process parameter variation on the reflectivity of sputter-deposited W-C multilayer diffraction gratings

Multilayer W-C diffraction gratings with nominal d spacings of 35 A have been fabricated by magnetron sputter deposition. The peak and integrated reflectivities of these films have been measured with Al K-alpha X-rays and compared to theoretical values. The rms surface roughness has been evaluated. The influence of several sputtering-system process parameters on the reflectivities has been investigated.

Sager, B.↗
NASA NTRS1986

Plasma assisted surface coating/modification processes: An emerging technology

A broad understanding of the numerous ion or plasma assisted surface coating/modification processes is sought. An awareness of the principles of these processes is needed before discussing in detail the ion nitriding technology. On the basis of surface modifications arising from ion or plasma energizing and interactions, it can be broadly classified as deposition of distinct overlay coatings (sputtering-dc, radio frequency, magnetron, reactive; ion plating-diode, triode) and surface property modification without forming a discrete coating (ion implantation, ion beam mixing, laser beam irradiation, ion nitriding, ion carburizing, plasma oxidation). These techniques offer a great flexibility and are capable in tailoring desirable chemical and structural surface properties independent of the bulk properties.

Spalvins, T.↗
NASA NTRS1986

Towards an optimised sputtered MoS2 lubricant film

It is shown that the tribological quality of MoS2 lubricant films formed by magnetron sputtering is determined by the choice of sputtering conditions. By selecting the appropriate conditions, films of extremely high lubricity and endurance (in vacuum), which are well suited to many space applications, are obtained. Such MoS2 films, when applied to precision ball hearings, give rise to the lowest torques (for the given test conditions) yet seen in our laboratory. While a remarkably good performance is obtained in vacuum, tests in air show a marked deterioration in lubricating qualities. It is demonstrated that this is attributable to the adsorption of water vapor on MoS2 surfaces and that the degree of deterioration is related to the partial pressure of water vapor present. Analysis of results indicates that the factors relevant to obtaining optimum films are deposition rate and film composition.

Roberts, E. W.↗
NASA NTRS1986

Magnetogram and soft X-ray comparisons of XBP and ER

The potential importance of the smallest emerging flux regions on the sun was discussed in numerous publications. The association between the objects seen in ground-based data, such as high resolution magnetrons or H alpha and soft X-ray data has produced results which are often contradictory. In the hope of resolving the present impasse, as much simultaneous soft X-ray and magnetogram data as possible were assembled in order to clarify the situation. It was found that separation of magnetic features into chance encounters and emerging flux makes some difference in overlapp with X-ray bright points (XBPs), although the effect is not overwhelming. The difference in solar cycle dependence between XBP and ephemeral regions is not explainable in terms of the results.

Golub, Leon↗
NASA NTRS1987

Corrosion-resistant amorphous metallic films of Mo49Cr33B18 alloy

Corrosion-resistant amorphous metallic alloy films of Mo49Cr33B18 with a crystallization temperature of 590 C were deposited onto glass and quartz substrates by magnetron sputter-quench technique. The amorphous nature of the films was confirmed by their diffuse X-ray diffraction patterns. The deposited films are densely packed (zone T) and exhibit low stress and good adhesion to the substrate. Corrosion current of as-deposited coating of MoCrB amorphous metallic alloy is approximately three orders of magnitude less than the corrosion current of 304 stainless steel in 1N H2SO4 solution.

Ramesham, R.↗
NASA NTRS1987

CuInSe2/ZnSe solar cells using reactively sputter-deposited ZnSe

Results on CuInSe2/ZnSe thin-film heterojunction photovoltaic devices are presented. By the use of reactive magnetron cosputtering of Zn and In dopant in Ar/H2Se, ZnSe thin films have been deposited on glass and conducting SnO2-coated glass substrates with resistivity as low as 20 ohm-cm at deposition temperatures as low as 120 C. Preliminary ZnSe depositions onto CuInSe2 films supplied by industrial laboratories are encouraging. Reactive-sputter-deposition parameters for ZnSe have yet to be optimized for CuInSe2 substrates; however, open-circuit voltages as high as 430 mV were obtained. The highest short-circuit current density, as determined by spectral response weighted for AM1.5 global insulation, was 37.4 mA/sq cm. In all cases, a highly conductive ZnO film was overcoated onto the ZnSe to reduce the overall sheet resistance.

Nouhi, A.↗
NASA NTRS1987

Plasma assisted surface coating/modification processes - An emerging technology

A broad understanding of the numerous ion or plasma assisted surface coating/modification processes is sought. An awareness of the principles of these processes is needed before discussing in detail the ion nitriding technology. On the basis of surface modifications arising from ion or plasma energizing and interactions, it can be broadly classified as deposition of distinct overlay coatings (sputtering-dc, radio frequency, magnetron, reactive; ion plating-diode, triode) and surface property modification without forming a discrete coating (ion implantation, ion beam mixing, laser beam irradiation, ion nitriding, ion carburizing, plasma oxidation. These techniques offer a great flexibility and are capable in tailoring desirable chemical and structural surface properties independent of the bulk properties.

Spalvins, T.↗
NASA NTRS1988

Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor.

Weinberg, I.↗