SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
La0.7Ca0.3MnO3 (a = 3.86 angstroms) epitaxial thin films have been grown on SrTiO3 (a = 3.905 angstroms), LaAlO3 (a = 3.79 angstroms), and YAlO3 (a/square root of 2 = 3.66 angstroms, b/square root of 2 = 3.77 angstroms) substrates. The films were analyzed with x-ray diffraction, x-ray photoemission spectroscopy, dc and ac resistivity, and dc magnetization.
Explore the source record for details and available documents.
Solar-wind induced sputtering of the lunar surface includes, in principle, both kinetic and potential sputtering. The role of the latter mechanism, however, in many focused studies has not been properly ascertained due partly to lack of data but can also be attributed to the assertion that the contribution of solar-wind heavy ions to the total sputtering is quite low due to their low number density compared to solar-wind protons. Limited laboratory measurements show marked enhancements in the sputter yields of slow-moving, highly-charged ions impacting oxides. Lunar surface sputtering yields are important as they affect, e.g., estimates of the compositional changes in the lunar surface, its erosion rate, as well as its contribution to the exosphere as well as estimates of hydrogen and water contents. Since the typical range of solar-wind ions at ~1 keV/amu is comparable to the thickness of the amorphous rim found on lunar soil grains, i.e. ~ few 10s nm, lunar simulant samples JSC-1A AGGL are specifically enhanced to have such rims in addition to the other known characteristics of the actual lunar soil particles. However, most, if not all laboratory studies of potential sputtering were carried out in single crystal targets, quite different from the rim s amorphous structure. The effect of this structural difference on the extent of potential sputtering has not, to our knowledge, been investigated to date.
UNKNOWN
Explore the source record for details and available documents.
Presented by NETL at ACS Fall Meeting 08/19
Abstract not provided.
Explore the source record for details and available documents.
Work presented at AIChE Annual Meeting, Orlando, FL, November 5-10, 2023.
The electronic structure and the anomalous Hall effect (AHE) at the recently grown 3 d - 5 d superlattice structure (SrMnO 3 ) 1 / (SrIrO 3 ) 1 are investigated theoretically using model and density-functional calculations. The observed ferromagnetism for the SMO layer, which becomes electron doped because of the charge transfer across the interface, is explained to be due to the Anderson-Hasegawa double exchange, while the SIO side becomes ferromagnetic due to the proximity effect and the Nagaoka physics of a hole-doped system. The broken time-reversal symmetry and the strong spin-orbit coupling in SIO provide the two essential ingredients for the AHE, which we describe within a square lattice model of d-orbitals relevant for the present structure. The model correctly predicts the order of magnitude of the anomalous Hall conductivity (AHC), which is computed using the Kubo formula. The density-functional results for the AHC are in good agreement with the experiments.
The effects of substrate misorientation off the (001) plane and of background impurities on electron transport in MBE-grown GaAs/AlGaAs modulation-doped superlattice-buffered quantum-well structures were investigated. Low-field transport data were obtained on GaAs/AlGaAs structures grown on substrates oriented 0, 2, 4, and 6.5 deg off the (001) plane towards either (111)A or (111)B. It is shown that the low-field two-dimensional electron gas (2DEG) mobility is a function of the angle and direction of the substrate orientation, and that the 2DEG mobility is a function of the direction of the applied electric field in the GaAs quantum well. The anisotropy in the 2DEG mobility is also a function of the tilt angle and tilt azimuth direction of the substrate from the (001) plane. In addition, it is shown that the amount of interface scattering from the inverted interface is a sensitive function of the amount of background impurities in the MBE machine.
Model scale effect on structural joint damping
Curved beam effects in composite frame structures representative of a light helicopter airframe are examined, and currently available analytical methods for studying these effects are briefly reviewed. A finite element study of curved composite frames is then reported, and it is shown that the curved frame effects must be accurately accounted for to avoid premature fracture. The finite element method is shown to be accurate to within 10 percent in accounting for the curved beam effects in composite structures.
The effect of the arsine content (from 0 to 8 μmol), supplied to a reactor together with hydrogen, on the formation of delta-doped gallium-arsenide structures by the pulsed laser sputtering of a Mn target is investigated. It is found that an arsine molar fraction of ~2.5 μmol in the reactor atmosphere during the formation of a Mn delta-doped GaAs layer allows one to obtain single-crystal epitaxial structures with the lowest layer resistance and a ferromagnetic-paramagnetic phase transition temperature of about 40 K. Increasing the arsine content to 8 μmol or the absence of arsine in a hydrogen flow leads to a significant increase in the layer resistance in the temperature range below 150 K and a decrease in the Curie temperature. In the first case, this may be due to partial compensation of the hole conductivity by donor-type defects formed as a result of an excess of arsenic on the growing surface (arsenic atoms in Ga positions or in interstitial positions). In the second case, when no arsine is supplied to the reactor, the growth surface is likely to be enriched with gallium atoms, which makes the incorporation of Mn into the Ga sublattice difficult.
The structure of slow magnetosonic shocks in the low beta regime is analyzed with attention given to ion heating and the effects of waves upstream of the electromagnetic ion/ion cyclotron (EMIIC) instability. Shock formation is assessed by means of three methods - a relaxation method and two based on dynamic flow interactions - to determine the effects of initialization and boundary conditions on the formation. Good solutions are found with the piston method and the similar flow-flow method in which the plasma is injected from two boundaries to form two slow shocks. Plasma parameters and shock normal angle are found to be the key variables dictating the structure of the magnetosonic shocks. Four unique classes of resultant shock structures are described in which classical, steady, or nonsteady behavior is found. The analysis also yields insight into the relationship between EMIIC instability and ion dissipation.
Spacecraft structural response, blast overpressure data, and effectiveness of flight instruments for blast effect measurements
This project was targeted on electronic structure, spectroscopic studies, and correlation effects in a variety of novel materials of great current interest. Spectroscopies resolved highly in momentum, energy or spatial dimensions are playing a key role in unraveling the nature of the ground state and excitation properties in wide classes of novel materials. The seminal insights thus obtained are of critical importance not only for answering some of the fundamental questions facing condensed matter physics and materials science today, but also for understanding and thus helping to design and develop new materials with desirable properties, which will continue to be the key to the survival of mankind and its energy needs as a technological society long into the future. However, spectroscopies do not provide a direct map of electronic states, but act as a very complex ‘filter’ or ‘mapping’ of the underlying spectrum. This connection between the electronic states and measured spectra—called the ‘matrix element effect’—is in general an extremely complex function of the phase space of the experiment (e.g. energy/polarization of photons in photoemission), presenting both a challenge and an opportunity. So motivated, this project pursued techniques for realistic treatment of electronic spectra of a wide variety of materials, which served as a prelude to formulating and implementing methodologies for making direct connection with various spectroscopies such as ARPES, STS/STM, and inelastic light scattering. Specific systems are topological materials, including 2D ultrathin films beyond graphene, novel superconductors, and nanocrystals, among others. Our goal was to exploit the strengths of various spectroscopies to piece together the most complete picture of electronic states in systems of current interest, enabling direct and sharpened confrontations with theoretical models, and also to help advance the reach of various spectroscopies.
Abstract not provided