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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 631 records · Page 35
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Simulation-driven design optimization of reaction injection molding (RIM) process for polydicyclopentadiene (pDCPD): Minimizing cycle time, defects, and warpage

Replacing metal components in trucks, trailers, and buses with lightweight polymer composites is challenging due to high temperatures and complex manufacturing. The Reaction Injection Molding (RIM) process using Dicyclopentadiene (DCPD) resin offers a solution by producing robust parts with excellent stiffness, impact strength, and resistance properties. Simulations are essential for optimizing this process, predicting defects, and improving quality. However, most commercial software is tailored for thermoplastics, requiring thermoset users to generate their own datasets. In this study, a material data card for DCPD was developed to perform RIM simulations. Design of Experiments (DOE) was used to identify key factors affecting filling, curing, and warpage, aiming to minimize cycle time and defects. The simulations explored varying injection gate parameters (size, location, number) and process conditions (mold/resin temperature, injection/curing pressure). Results showed that gate design significantly impacts filling behavior and defects. A single central gate provided balanced flow with fewer defects, while two corner gates led to more defects. Additionally, lower injection pressure increased filling time, while higher mold temperature accelerated curing but led to more warpage. In conclusion, this optimization framework aims to enhance DCPD part performance and promote sustainable manufacturing by reducing waste and energy consumption.

42 ENGINEERING↗
DOE OSTI2019

Channeling analysis in studying ion irradiation damage in materials containing various types of defects

We present that ion channeling is a powerful quantitative technique for studying ion-irradiation induced defect evolution in single crystalline materials. An iterative procedure to determine dechanneling yields has been developed for decades, serving as a major method for analyzing experimental channeling data. The applicability of such procedure is, however, generally limited to the crystalline damage with only point defects and local amorphous domains. For the other cases, such as irradiated metals, the assumption of direct-backscattering free has usually been made. In the present study, Ni, TiAl, MgO, and SrTiO 3 single crystals are selected as four model materials, representing metals, intermetallic alloys, and ceramic compounds with different defect evolution processes under irradiation, to investigate the fidelity of applying dechanneling analysis on various types of defects. The pure dechanneling assumption is shown oversimplified in Ni irradiated with low fluence self-ions and may result in error on the derived damage profile. Moreover, the iterative procedure of dechanneling analysis is shown valid for more general situations than the randomly distributed atoms, including those not exhibiting a peak in channeling spectra. The disappearance of damage peak in channeling spectra is attributed to the combined effects of small (but non-zero) scattering factor, long-range damage effects, and non-ignorable damage level in pristine crystals. Furthermore, the ratio of direct backscattering to dechanneling areas provides information on defect configurations in the materials containing a well-defined damage peak in channeling spectra. Finally, the contribution from dechanneling sources increases from SrTiO 3 , TiAl, to MgO, according to the derived scattering and dechanneling factors.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Equilibrium distribution of point defects in Fe-Y-O as a typical representative of nanocluster-strengthened alloys

The statistical mechanic approach has been used to estimate the equilibrium defect distribution in a multiphase system by minimizing its free energy using microstructural characteristics and a finite set of defects obtained by first-principles calculations. Recently the approach was extended to take in consideration defects at the interface of the precipitate and matrix. Herein we apply the developed approach to the investigation of the stability of bcc Fe containing yttria, Y 2 O 3 , nanoclusters as a prototype of nanostructured ferritic alloys. It has been obtained that (100)Fe-O interface is unstable with respect to vacancies production. In a contrast to (100)Fe-O interface, the so called Klim interface is stable, i.e. local vacancy concentration at this interface at 600 K is below 10 -12 . It has been demonstrated that due to large defect formation energies the ODS particles are extremely stable and the main defect corresponds to Fe atoms substitute Y in Y 2 O 3 precipitate. Moreover, under thermodynamic equilibrium condition, the preexist vacancies in bulk Fe do not accumulate oxygen atom. The later observation not necessarily forbid the existence of a large amount of preexisting Fe vacancy - oxygen atom clusters at the initial stages of alloy formation far from equilibrium.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Implications of point defect accumulation on UO 2 thermal conductivity and fission gas release under accelerated fuel irradiation

Evaluation of thermal properties is a crucial factor for nuclear fuel performance. During reactor operation, the accumulation of fission products and irradiation-induced lattice defects are responsible for degradation in thermal conductivity. Consequently, it affects fuel temperature and fission gas release (FGR) among other Multiphysics processes important for economics and safety analysis. We analyze the implications of point defects (PD) accumulation described using a rate theory (RT) Model on lattice thermal conductivity of UO 2 . Here, we demonstrate that fission rate-dependent point defect concentrations have the largest impact on in-pile thermal conductivity in the periphery of light water reactor fuels below a temperature threshold governed by the migration barrier of defects. Our analysis provides a mechanistic description of this phenomena which current fuel performance codes treat empirically. The reduction of thermal conductivity in the low -temperature rim region acts as additional thermal resistance and leads to a temperature notably larger than suggested by Lucuta thermal conductivity correlation. These effects are anticipated to have notable impacts when fuels are exposed to accelerated radiation. The impact of such point defect-informed treatment of thermal conductivity on fuel performance is evaluated by a detailed analysis of fission gas behavior and its release. We consider several models capturing different stages of fission gas bubble evolution and fission gas release (FGR). Finally, a new fission rate-dependent correction to the Lucuta correlation is proposed. The results show a significant reduction in thermal conductivity at the fuels’ periphery and an increase in fuel centerline temperature specifically at low burnups. Ultimately a modified LC shows a higher FGR compared to the original LC, while the acceleration process results in a reduction in overall FGR.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

Improved guided-wave acoustic defect detection and localization in pipes under varying temperature conditions using deep learning

Early defect detection in pipelines is critical across industries, particularly in the oil and gas sector, where failures result in significant maintenance costs and operational disruptions. Acoustic guided-wave techniques are widely used for nondestructive evaluation of pipeline defects due to their long-distance propagation capability. However, environmental variations, sensitivity limitations, and complex signal interpretation challenges limit the effectiveness of traditional signal processing approaches with guided-wave signals. Recent advances in deep learning methods have demonstrated remarkable success in solving complex real-world problems in many fields. In particular, deep-learning-based signal processing holds substantial promise to overcome limitations and challenges of conventional signal processing. This study presents a deep learning framework for pipeline inspection using acoustic guided-wave signals under temperature varying environments. The proposed framework employs a dual-path one-dimensional convolutional autoencoder that combines defect detection, localization, and temperature prediction functions. The proposed system utilizes multi-mode and broadband acoustic waves with an optimized number of sensors that provide high accuracy while retaining practical simplicity. Experimental validation is performed on a carbon steel pipe. The results indicate exceptional defect detection accuracy and precise defect localization with a mean absolute error of 66 mm. The proposed technique also predicts the effective average temperature of the pipe with a mean absolute error of 0.2°C. Comparative analysis shows superior performance of the proposed method over a traditional method previously developed by the authors' team. These results highlight the potential of integrating deep learning methods into guided-wave pipeline inspection systems to improve reliability under varying environmental conditions.

42 ENGINEERING↗
DOE OSTI2021

Defect annihilation in heavy ion irradiated polycrystalline gold

In this study, we explore the interaction of electron wind force (EWF) with defects originating from ion irradiation in-situ inside a transmission electron microscope. Nanocrystalline gold specimens were self-ion irradiated to a dose of 5 × 10 15 ions/cm 2 (45 displacement per atom) to generate a high density of displacement damage. We also developed a molecular dynamics simulation model to understand the associated atomic scale mechanisms. Both experiments and simulations show that the EWF can impart significant defect mobility even at low temperatures, resulting in the migration and elimination of defects in a few minutes. Overall, we propose that the EWF interacts with defects to create highly glissile Shockley partial dislocations, which makes the fast and low temperature defect annihilation possible.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Radiation defect dynamics in solids studied by pulsed ion beams

The buildup of radiation damage is often a dynamic phenomenon proceeding via migration and interaction of point defects ballistically generated in collision cascades. In this work, we describe how the dynamic aspects of damage formation via inter-cascade defect interaction can be studied by pulsed ion beam bombardment. We illustrate the pulsed beam method by an example for Si bombarded at 100°C with 1.35 MeV Xe ions and compare with previously reported data for 0.5 MeV Xe ion irradiation. Results reveal that the time constant of defect relaxation strongly depends on both ion energy and the depth from the sample surface. This observation cannot be entirely explained as an effect of the collision cascade density on defect interaction dynamics, based on depth dependencies of cascade densities calculated with a recently developed model that accounts for the fractal nature of cascades. There results call for future systematic studies to better understand ion energy and cascade density effects on defect relaxation dynamics in Si.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Lattice Disorder and Oxygen Migration Pathways in Pyrochlore and Defect-Fluorite Oxides

Atomic-scale disorder plays an important role in the chemical and physical properties of oxide materials. The structural flexibility of pyrochlore-type oxides allows for crystal-chemical engineering of these properties. Compositional modification can push pyrochlore oxides toward a disordered defect-fluorite structure with anion Frenkel pair defects that facilitate oxygen migration. The local structure of the long-range average cubic defect-fluorite was recently claimed to consist of randomly arranged orthorhombic weberite-type domains. Here, we show, using low-temperature neutron total-scattering experiments, that this is not the case for Zr-rich defect-fluorites. By analyzing data from the pyrochlore/defect-fluorite Y 2 Sn 2–x Zr x O 7 series using a combination of neutron pair distribution function and big-box modelling, we have differentiated and quantified the relationship between anion sub-lattice disorder and Frenkel defects. These details directly influence the energy landscape for oxygen migration and are crucial for simulations and design of new materials with improved properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Observation of Single-Electron Transport and Charging on Individual Point Defects in Atomically Thin WSe 2

Defects significantly impact the properties of 2D semiconductors, providing in-gap quantum states that can serve as a natural platform for single-electron operations, localization sites for excitons to serve as single-photon sources, and potentially quantum spin memories. To date, however, a microscopic observation of such a single-electron transport (SET) behavior has been rarely reported on single defects of 2D semiconductors. In this study, we report a SET and charge-state transition on individual point-defect states buried in the bilayer WSe 2 using scanning tunneling microscopy. SET characteristics of their states is evidenced by both the Coulomb staircase and the saturation behavior of the transport current, consistent with the SET model. Furthermore, we demonstrate that, through the local field of a scanning tunneling microscope tip, it is possible to successively charge the defects by single electrons, suggested by both the ring structures and charging peaks in dI/dV measurements. Our results provide new insights into the quantum nature of these defect-bound states, as well as the possibility of using their single-electron behavior and response for applications in quantum information and local-field sensing.

2D semiconductor↗
DOE OSTI2018

Boron Doping and Defect Engineering of Graphene Aerogels for Ultrasensitive NO 2 Detection

In this study, boron-doped and defect-engineered graphene aerogels are prepared using triphenyl boron as a boron precursor and subsequent heat treatments. The boron chemistry and concentration in the graphene lattice are found to be highly dependent on the temperature used to activate boron. At 1500 °C, boron is incorporated at 3.2 atom % through a combination of B–C, B–N, and B–O bonds. At 1750 °C, the boron concentration decreases to 0.7 atom % and is predominantly incorporated through B–N bonding. Higher temperatures result in complete expulsion of boron from the lattice, leaving behind defects that are found to be beneficial for NO 2 gas detection. The gas sensing properties are explored to gain insight into the impact of boron chemistry on the sensing performance. A highly sensitive and selective conductometric NO 2 sensor is fabricated on a low-power microheater. Defect-engineered graphene aerogels with no boron remaining have superior gas detection properties. At an optimum sensing temperature of 240 °C, the defect-engineered aerogel has a theoretical detection limit of 7 ppb for NO 2 and response and recovery times of 100 and 300 s, respectively, with excellent selectivity over ammonia and hydrogen. Lastly, the superior gas sensing performance of defect-engineered graphene aerogels has remarkable implications for their performance in catalysis and energy storage applications.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Comparative Study of the Effect of Defects on Selective Adsorption of Butanol from Butanol/Water Binary Vapor Mixtures in Silicalite-1 Films

A promising route for sustainable 1-butanol (butanol) production is ABE (acetone, butanol, ethanol) fermentation. However, recovery of the products is challenging because of the low concentrations obtained in the aqueous solution, thus hampering large-scale production of biobutanol. Membrane and adsorbent-based technologies using hydrophobic zeolites are interesting alternatives to traditional separation techniques (e.g., distillation) for energy-efficient separation of butanol from aqueous mixtures. To maximize the butanol over water selectivity of the material, it is important to reduce the number of hydrophilic adsorption sites. This can, for instance, be achieved by reducing the density of lattice defect sites where polar silanol groups are found. The density of silanol defects can be reduced by preparing the zeolite at neutral pH instead of using traditional synthesis solutions with high pH. In this work, binary adsorption of butanol and water in two silicalite-1 films was studied using in situ attenuated total reflectance–Fourier transform infrared (ATR-FTIR) spectroscopy under equal experimental conditions. One of the films was prepared in fluoride medium, whereas the other one was prepared at high pH using traditional synthesis conditions. The amounts of water and butanol adsorbed from binary vapor mixtures of varying composition were determined at 35 and 50 °C, and the corresponding adsorption selectivities were also obtained. Both samples showed very high selectivities (100–23 000) toward butanol under the conditions studied. The sample having low density of defects, in general, showed ca. a factor 10 times higher butanol selectivity than the sample having a higher density of defects at the same experimental conditions. This difference was due to a much lower adsorption of water in the sample with low density of internal defects. Analysis of molecular simulation trajectories provides insights on the local selectivities in the zeolite channel network and at the film surface.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Radiative Electronic Bound States in the Continuum from Defects in Semiconductors

Continuum-buried defect states in semiconductors are generally expected to be optically inactive because of their strong coupling to continuum bands. Here, we show that such defects can instead host radiative electronic bound states in the continuum (BICs) using the silicon G center as a prototypical example. Hybrid functional first-principles calculations with a Hubbard U correction reveal that a localized defect state, initially buried below the valence band maximum (VBM) in the ground state, undergoes exchange-driven energy-level reordering under optical excitation and shifts above the VBM. This exchange-induced transition suppresses nonradiative decay and enables a robust radiative emission. By computing temperature-dependent nonradiative lifetimes and comparing them to experimental photoluminescence (PL) lifetimes, we quantitatively reproduce the observed temperature dependence of the emission. These results uncover a stabilization mechanism for continuum-embedded defect states and establish electronic BICs as a general paradigm for designing defect-based optical systems, including quantum emitters and qubits.

Hong, SeongYun↗
DOE OSTI2019

Unconventional Defects in a Quasi-One-Dimensional KMn 6 Bi 5

Quasi-one-dimensional (Q1D) structures comprising a compact array of indefinitely long 1D nanowires (NWs) are scarce, especially in a bulk device-scale showing metallic and semiconducting behaviors along different axes. Unlike plentiful observations of nature of defects in three-/two -dimensional materials, there is a notable paucity of such reports in Q1D. Herein we present unconventional motific defects and their properties in a bulk Q1D KMn 6 Bi 5 crystal, in which an individual NW motif acts as one body. We discovered motific inter- and intra-NW defects, such that a linear set of 1D motifs are displaced. Stress generates two domains with altered inter-NW spacings and a Bi–Mn solid solution grain, leading to a local bulk plasmon shift due to NW array reconfiguration as well as atomic rearrangement. The observation of such exotic defects and associated phenomena in this Q1D may provide guidance on overall defect mechanism in other Q1D systems and their collective anisotropic properties.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Behavior of Hydrogarnet‐Type Defects in Hydrous Stishovite at Various Temperatures and Pressures

Abstract Dense polymorphs of silica have been demonstrated experimentally to incorporate from 1.5 wt% to as much as 11.6 wt% H 2 O as OH groups, with implications for the hydrogen budgets of Earth and other planets. This OH is thought to enter the SiO 2 structure via a charge‐balanced substitution in which silicon vacancies (V Si ) are compensated by protonating four of the surrounding six oxygen atoms, often referred to as a hydrogarnet‐type defect. There are many possible configurations for this defect structure in dense silica, but the nature of these configurations and whether they can be distinguished experimentally is unknown. We present here density functional theory calculations that systematically assess the possible configurations of a hydrogarnet‐type defect in stishovite (rutile‐type SiO 2 ), with direct comparisons to experimental vibrational spectroscopy data. We predict that stishovite synthesized at 450 K and 10 GPa quenched to room temperature is dominated by a single defect type with tetrahedral geometry. This leads to OH stretching modes (2,500–3,000 cm −1 ) and SiOH bending modes (∼1,400–1,450 cm −1 ) largely consistent with experimentally observed modes. One remaining issue is that our calculations produce results compatible with experimental data on H to D exchange, but do not explain why a considerable fraction of the 1,420 cm −1 mode shifts by only 40 cm −1 in deuterated samples. At elevated pressures and temperatures, we find that a second square planar defect configuration also becomes favorable, leading to modes that should allow differentiation from the tetrahedral configuration.

Geochemistry & Geophysics↗
DOE OSTI2018

Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering

Carrier diffusion is of paramount importance in many semiconductor devices, such as solar cells, photodetectors, and power electronics. Structural defects prevent such devices from reaching their full performance potential. Although a large carrier diffusion length indicates high material quality, it also implies increased carrier depletion by an individual extended defect (for instance, a dislocation) and obscures the spatial resolution of neighboring defects using optical techniques. For commonly utilized photoluminescence (PL) imaging, the spatial resolution is dictated by the diffusion length rather than by the laser spot size, no matter the spot is at or below the diffraction limit. We show how Raman imaging of the LO phonon-plasmon-coupled mode can be used to recover the intrinsic spatial resolution of the optical system, and we demonstrate the effectiveness of the technique by imaging defects in GaAs with diffraction-limited optics, achieving a 10-fold improvement in resolution. Furthermore, by combining Raman and PL imaging, we can independently and simultaneously determine the spatial dependence of the electron density, hole density, radiative recombination rate, and non-radiative recombination rate near a dislocation-like defect, which has not been possible using other techniques.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Local electronic descriptors for solute-defect interactions in bcc refractory metals

The interactions between solute atoms and crystalline defects such as vacancies, dislocations, and grain boundaries are essential in determining alloy properties. Here we present a general linear correlation between two descriptors of local electronic structures and the solute-defect interaction energies in binary alloys of body-centered-cubic (bcc) refractory metals (such as W and Ta) with transition-metal substitutional solutes. One electronic descriptor is the bimodality of the d-orbital local density of states for a matrix atom at the substitutional site, and the other is related to the hybridization strength between the valance sp- and d-bands for the same matrix atom. For a particular pair of solute-matrix elements, this linear correlation is valid independent of types of defects and the locations of substitutional sites. These results provide the possibility to apply local electronic descriptors for quantitative and efficient predictions on the solute-defect interactions and defect properties in alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Defect and structural evolution under high-energy ion irradiation informs battery materials design for extreme environments

Understanding defect evolution and structural transformations constitutes a prominent research frontier for ultimately controlling the electrochemical properties of advanced battery materials. Herein, for the first time, we utilize in situ high-energy Kr ion irradiation with transmission electron microscopy to monitor how defects and microstructures evolve in Na- and Li-layered cathodes with 3d transition metals. Our experimental and theoretical analyses reveal that Li-layered cathodes are more resistant to radiation-induced structural transformations, such as amorphization than Na-layered cathodes. The underlying mechanism is the facile formation of Li-transition metal antisite defects in Li-layered cathodes. The quantitative mathematical analysis of the dynamic bright-field imaging shows that defect clusters preferentially align along the Na/Li ion diffusion channels ( a-b planes), which is likely governed by the formation of dislocation loops. Our study provides critical insights into designing battery materials for extreme irradiation environments and understanding fundamental defect dynamics in layered oxides.

25 ENERGY STORAGE↗
DOE OSTI2021

Defect-driven selective metal oxidation at atomic scale

Nanoscale materials modified by crystal defects exhibit significantly different behaviours upon chemical reactions such as oxidation, catalysis, lithiation and epitaxial growth. However, unveiling the exact defect-controlled reaction dynamics (e.g. oxidation) at atomic scale remains a challenge for applications. Here, using in situ high-resolution transmission electron microscopy and first-principles calculations, we reveal the dynamics of a general site-selective oxidation behaviour in nanotwinned silver and palladium driven by individual stacking-faults and twin boundaries. The coherent planar defects crossing the surface exhibit the highest oxygen binding energies, leading to preferential nucleation of oxides at these intersections. Planar-fault mediated diffusion of oxygen atoms is shown to catalyse subsequent layer-by-layer inward oxide growth via atomic steps migrating on the oxide-metal interface. These findings provide an atomistic visualization of the complex reaction dynamics controlled by planar defects in metallic nanostructures, which could enable the modification of physiochemical performances in nanomaterials through defect engineering.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗