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At least 631 records · Page 35

All sources NASA NTRS DOE OSTI

DOE OSTI2019

Nanoscale magnetic Josephson junctions and superconductor/ferromagnet proximity effects for low-power spintronics

Competition between superconducting and ferromagnetic ordering at interfaces between ferromagnets (F) and superconductors (S) gives rise to several proximity effects such as odd-triplet superconductivity and spin-polarized supercurrents. A prominent example of an S/F proximity effect is the spin switch effect observed in S/F/N/F superconducting spin valve multilayers, in which the superconducting transition temperature T c is controlled by the angle Φ between the magnetic moments of the F layers separated by a nonmagnetic metallic spacer N. We carried out an experimental study of spin switch effect in Nb/Co/Cu/Co/CoO x nanowires measured as a function of bias current flowing in the plane of the layers. These measurements reveal an unexpected dependence of T c (Φ) on the bias current: T c (Φ) – T c (0) changes sign with increasing current bias. We attribute the origin of this bias dependence of the spin switch effect to a spin Hall current originating in Nb and flowing perpendicular to the plane of the multilayer, which suppresses T c of the multilayer. The bias dependence of spin switch effect can be important for hybrid F/S devices such as cryogenic memory for superconducting computers when device dimensions are scaled down to the nanometer length scale.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Spin Effects in Low Dimensional Correlated Systems (Final Technical Report)

Our program focuses on the behavior of two-dimensional superconducting systems that have been placed in high magnetic fields and/or in contact with magnetic materials. Our specific research agenda is organized into two separate but related areas. The first is a study of disorder and correlation effects in extremely thin superconducting aluminum, beryllium, and rhenium films that have been subjected to very high magnetic fields. We are particularly interested in understanding how the coupling between the applied field and the electron spins affects the system’s ability to form superconducting state. We now have good evidence that as the electron spins in these superconductors attempt to align to the magnetic field, a new superconducting phase emerges near the critical field transition and that this phase has a significant influence on the character of the transition. Thus, the spin behavior near the transition is much more complex than expected. The second class of systems is proximity structures comprised of superconducting/ferromagnetic (SC/FM) and superconducting/heavy metal (SC/HM) bilayers. We have developed spin-resolved tunneling probes that give us a direct measure of the proximity-induced exchange field in the SC/FM structures, as well as the spin-orbit scattering rate in SC/HM structures. Recently we have demonstrated that the magnitude of the exchange field can be modulated with an external gate, thereby producing a magneto-electric response in the bilayers. We plan to optimize this magneto-electric effect by getting a better understanding of the microscopic mechanism of the interface-induce exchange field, as well as improving the gate barriers and/or the bilayer interface quality. The ultimate goal is to develop a device such as a voltage-controlled superconducting switch or a spin- polarized electron source with a voltage-tunable Zeeman splitting.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1966

Preregulator feedback circuit utilizes Light Actuated Switch

Preregulator feedback circuit employing a Light Actuated Switch /LAS/ provides a simple and efficient feedback device in a power supply preregulator which maintains dc isolation between input and output grounds. The LAS consists of a diode PN junction infrared source close to, but electrically isolated from, a photodetector.

Hayser, T. P.↗

NASA NTRS1977

System implications of large radiometric array antennas

Temperature sensitivity degradation due to antenna losses is recognized as a hindrance to extension of available remote-sensing radiometry techniques to larger systems for enhanced spatial resolution. The use of large antennas is also complicated by difficulties with bandwidth and integration time. Advantages of introducing active devices at the subarray level, with distributed Dicke switching or correlation detection, are examined, and their possible contribution to the design of effective imaging microwave radiometers for remote sensing of geophysical parameters (sea state, distribution of sea ice, cloud types and their distributions, soil moisture) is assessed.

Levis, C. A.↗

NASA NTRS1981

Power transistor switching characterization

The switching properties of power transistors are investigated. The devices studied were housed in IO-3 cases and were of an n(+)-p-n(-)-n(+) vertical dopant structure. The effects of the magnitude of the reverse-base current and temperature on the reverse-bias second breakdown characteristics are discussed. Brief discussions of device degradation due to second breakdown and of a constant voltage turn-off circuit are included. A description of a vacuum tube voltage clamp circuit which reduces clamped collector voltage overshoot is given.

Blackburn, D. L.↗

NASA NTRS1990

Electro-optic network analyzer

The bandwidth of frequency domain measurement methods of electrical signals has usually been far greater than the bandwidth of time domain methods. The primary limits of the time domain approach have been the 20 to 30 GHz bandwidth limit for electronic waveform acquisition instrumentation, and the lack of usable electrical pulse generators for excitation of a test device. The bandwidth of frequency domain network analysis appears to have reached a plateau of between 100 to 200 GHz, while time domain measurement have improved markedly in both bandwidth and sensitivity with the introduction of the pulsed laser based electro-optic sampling approach. Network analysis or the measurement of device scattering parameters provides information necessary to the design of electronic network such as high frequency amplifiers, mixers, and phase shifter. The bandwidth of frequency domain network analysis is currently being exceeded by the next generations of high frequency transistors and devices. Thus the electro-optic approach is a natural means of extending network analysis into the range above 100 GHz by employing time domain methods. In this approach, a suitable electrical excitation pulse is generated and propagated along a transmission line toward a test device. In the picosecond domain, laser driven photoconductive switches provide a unique method of generating electrical transients. Several materials were studied for generating short electrical pulses using photoconductive switches. The various semiconductive materials tested for photoconductive switching, and the electro-optic measurement technique used to characterize the material performance are described.

Jackson, Todd A.↗

NASA NTRS2005

Progress on the Plasmoid Thruster Experiment (PTX)

A plasmoid, also called a compact toroid, is a compact plasma structure with an integral magnetic field, that may be categorized according to the relative strength of the poloidal and toroidal magnetic field (Bp and Bt, respectively). An object with Bp/Bt much greater than 1 is called a Field Reverse Configuration (FRC); if Bp = Bt, it is called a Spheromak. The plasmoid thruster is a pulsed inductive device which operates by repetitively producing plasmoids that are accelerated and ejected at high velocity. As the process is inductive, this thruster avoids the problem of electrode erosion. Also, the magnetic structure of the plasmoid should suppress thermal and mass losses to the wall, and improve detachment of the plasma exhaust from the thruster. This concept should be capable of producing an Isp of 5,000 seconds and greater, with thrust densities of order 10(exp 5) N/sq m. The plasmoid thruster consists chiefly of a conical theta-pinch coil. Propellant is introduced onto a bias magnetic field, produced by an auxiliary coil, and is then pre-ionized, freezing in the magnetic field. The theta-pinch coil is then energized producing a field aligned anti- parallel to the bias field. The reversed field reconnects with the bias field to form the plasmoid. The magnetic pressure of the reversed field accelerates the plasmoid out of the thruster . A series of experiments have been conducted on the PTX device, which consisted of a single turn conical theta-pinch coil, driven by a 560 nF, 35 kV capacitor bank, which rang at a frequency of 500 kHz, and served all three functions required for formation: pre-ionization, bias field loading, and field reversal. Initial ionization was found to occur in an annular region at the exit plane of the coil, and was found to be reproducible with a variety of gases, including H2, D2, Ar, and an H2/N2 mixture (75% / 25%). A fast gas valve for injecting propellant has been tested, as well as a ringing pre-ionization circuit (operating at 5 Mhz) to better control the plasmoid formation. Velocities as high as 20 km/s have been measured for a plasmoid propagating into a static back-fill of neutral gas. Magnetic field and density measurements indicate that the plasmoid retains its structure well into the down-stream exhaust region, and that it is capable of pushing a dense cloud of neutral gas in front of it. Further experiments will focus on the effects of coil geometry and bias-field strength on the performance of the device. A high-power solid-state switching system is being developed in order to replace the spark-gap switch.

Martin, Adam↗

DOE OSTI2020

Investigation of Radiological Contamination at Parks in the Gateway National Recreation Area - 20350

In 2005, the National Park Service was notified that elevated radiation levels were detected at Great Kills Park during a baseline radiological mapping effort conducted by the Counter Terrorism Bureau of the New York City Police Department and the United States Department of Energy. Great Kills Park is in the Staten Island Unit of the Gateway National Recreation Area. A records search determined that approximately 280 acres of the park was established over an area in which the New York City Department of Sanitation placed approximately 15.1 million cubic yards of waste fill from 1944 to 1948. Since 2005, a series of response actions and investigations were conducted on behalf of the National Park Service to mitigate risk to human health and the environment and to determine the nature of radiological contamination at Great Kills Park. The findings support that radiological contamination is related to certain components of waste fill, including incinerator residue from both on and offsite incinerators, coal ash from the historical use of coal-fired boilers for heating, and incidental radiological artifacts in the waste fill due to their historical use and subsequent disposal. A majority of the radiological artifacts were determined to contain radium-226 and included radioluminescent markers, radium impregnated switch board buttons, radium paint containers, and brachytherapy devices. The National Park Service has several other Parks in the Gateway National Recreation Area that were established in areas with a similar history to Great Kills Park, and overlie waste fill historically placed during landfilling operations, including Spring Creek Park and Dead Horse Bay. Over the last year, the National Park Service has performed additional radiological investigations at Great Kills Park as part of the ongoing Remedial Investigation under the Comprehensive Environmental Response, Compensation, and Liability Act. In addition, preliminary radiological investigations were performed at Spring Creek Park and Dead Horse Bay Park in the Jamaica Bay Unit of Gateway National Recreation Area. These investigation activities identified gamma radiation levels above the ambient level, several of which were attributable to radiological artifacts similar in nature to those recovered at Great Kills Park. Ongoing investigations at Parks in the Gateway National Recreation Area support an association between radiological contamination and historical landfilling practices that were common prior to the regulation and control of radioactive materials. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

DOE OSTI2021

A Multi-Site Networked Hardware-in-Loop Platform for Evaluation of Interoperability and Distributed Intelligence at Grid-Edge

Electric power systems have experienced large increases in the number of intelligent, connected and controllable devices being deployed, leading to a high degree of distributed intelligence at the grid-edge. These devices, both utility-owned and consumer-owned, include but are not limited to: renewable generation sources, energy storage, remote switches, voltage regulators, and smart controllable loads such as electric vehicles. These new devices provide significant potential for increased operational flexibility that can be leveraged to achieve system reconfiguration, resiliency improvements, power quality improvements, and distribution system automation. However, there are two significant challenges that must be addressed before these assets can be leveraged for operations: interoperability and system level validation prior to deployment. Because of the complexity of distributed control systems, and their interactions with legacy centralized controls, a purely simulations-based approach for pre-deployment validation is not sufficient. It requires hardware-in-loop testing to emulate the operational hardware devices and evaluate their performance. Additionally, securely integrating multiple test facilities at utility operators and vendors might enable rapid scale-up of evaluation platforms, and remove the need for multiple expensive standalone installations. Presented in this paper, is the development of a multi-site evaluation platform that employs Advanced Distribution Management Systems (ADMS), distributed control devices, real-time hardware-in-loop assets, secure communication links, and protocol adapters. This platform uses standards-based approaches and open-source tools, and hence can serve as a template for other researchers and institutions to implement their multi-site evaluation frameworks for pre-deployment testing.

Essakiappan, Somasundaram↗

DOE OSTI2021

Role of element-specific damping in ultrafast, helicity-independent, all-optical switching dynamics in amorphous (Gd,Tb)Co thin films

Ultrafast control of the magnetization in ps timescales by fs laser pulses offers an attractive avenue for applications such as fast magnetic devices for logic and memory. However, ultrafast helicity-independent all-optical switching (HI-AOS) of the magnetization has thus far only been observed in Gd-based, ferrimagnetic amorphous (a-) rare earth-transition metal (a-RE-TM) systems, and a comprehensive understanding of the reversal mechanism remains elusive. Here, we report HI-AOS in ferrimagnetic a-Gd 22-x Tb x Co 78 thin films, from x=0 to 18, and elucidate the role of Gd in HI-AOS in a-RE-TM alloys and multilayers. Increasing Tb content results in increasing perpendicular magnetic anisotropy and coercivity, without modifying magnetization density, and slower remagnetization rates and higher critical fluences for switching but still shows picosecond HI-AOS. Simulations of the atomistic spin dynamics based on the two-temperature model reproduce these results qualitatively and predict that the lower damping on the RE sublattice arising from the small spin-orbit coupling of Gd (with L=0) is instrumental for the faster dynamics and lower critical fluences of the Gd-rich alloys. Annealing a-Gd 10 Tb 12 Co 78 leads to slower dynamics which we argue is due to an increase in damping. These simulations strongly indicate that accounting for element-specific damping is crucial in understanding HI-AOS phenomena. The results suggest that engineering the element-specific damping of materials can open up new classes of materials that exhibit low-energy, ultrafast HI-AOS.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics

Abstract The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe 2 ) and a topological semimetal (ZrTe 2 ). We find that one unit-cell (u.c.) thick 1T-CrTe 2 grown epitaxially on ZrTe 2 is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe 2 ), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe 2 (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Mean-field control for efficient mixing of energy loads

In this work, we pose an engineering challenge of controlling an ensemble of energy devices via coordinated, implementation-light, and randomized on/off switching as a problem in nonequilibrium statistical mechanics. We show that mean-field control with nonlinear feedback on the cumulative consumption, assumed available to the aggregator via direct physical measurements of the energy flow, allows the ensemble to recover from its use in the demand response regime, i.e., transition to a statistical steady state, significantly faster than in the case of the fixed feedback. Moreover when the nonlinearity is sufficiently strong, one observes the phenomenon of “super-relaxation,” where the total instantaneous energy consumption of the ensemble transitions to the steady state much faster than the underlying probability distribution of the devices over their state space, while also leaving almost no devices outside of the comfort zone.

25 ENERGY STORAGE↗

NASA NTRS1976

Development and fabrication of improved power transistor switches

A new class of high-voltage power transistors has been achieved by adapting present interdigitated thyristor processing techniques to the fabrication of NPN Si transistors. Present devices are 2.3 cm in diameter. The electrical performance obtained is consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The forward safe operating area of the experimental transistors shows a significant improvement over commercially available devices. The report describes device design, wafer processing, and various measurements which include dc characteristics, forward and reverse second breakdown limits, and switching times.

Hower, P. L.↗

NASA NTRS1974

Load insensitive electrical device

A class of power converters is described for supplying direct current at one voltage from a source at another voltage. It includes a simple passive circuit arrangement of solid-state switches, inductors, and capacitors by which the output voltage of the converter tends to remain constant in spite of changes in load. The switches are sensitive to the current flowing in the circuit and are employed to permit the charging of capacitance devices in accordance with the load requirements. Because solid-state switches (such as SCR's) may be used with relatively high voltage and because of the inherent efficiency of the invention that permits relatively high switching frequencies, power supplies built in accordance with the invention, together with their associated cabling, can be substantially lighter in weight for a given output power level and efficiency of operation than systems of the prior art.

Schwarz, F. C.↗

DOE OSTI2023

Electrochemical Doping of Halide Perovskites by Noble Metal Interstitial Cations

Abstract Metal halide perovskites are an attractive class of semiconductors, but it has proven difficult to control their electronic doping by conventional strategies due to screening and compensation by mobile ions or ionic defects. Noble‐metal interstitials represent an under‐studied class of extrinsic defects that plausibly influence many perovskite‐based devices. In this work, doping of metal halide perovskites is studied by electrochemically formed Au + interstitial ions, combining experimental data on devices with a computational analysis of Au + interstitial defects based on density functional theory (DFT). Analysis suggests that Au + cations can be easily formed and migrate through the perovskite bulk via the same sites as iodine interstitials (I i + ). However, whereas I i + compensates n‐type doping by electron capture, the noble‐metal interstitials act as quasi‐stable n‐dopants. Experimentally, voltage‐dependent, dynamic doping by current density–time ( J–t ), electrochemical impedance, and photoluminescence measurements are characterized. These results provide deeper insight into the potential beneficial and detrimental impacts of metal electrode reactions on long‐term performance of perovskite photovoltaic and light‐emitting diodes, as well as offer an alternative doping explanation for the valence switching mechanism of halide‐perovskite‐based neuromorphic and memristive devices.

14 SOLAR ENERGY↗

DOE OSTI2022

Black-to-Transmissive dual polymer complementary electrochromics with high coloration efficiency

In a complementary electrochromic device (ECD), both the anode and the cathode can synergistically change color in response to an electrical bias, allowing for a high coloration efficiency. Complementary ECD that can switch from black to transmissive state is rare, due to the difficulty of pairing two electrochromic electrodes. In this study, we report the construction of high coloration efficiency complementary ECDs by pairing polyazoisoindigo (PAI), an n-type electrochromic polymer that undergoes green-to-transmissive switching, with p-type magenta (ECP-M) and red (ECP-R) electrochromic polymers to obtain black-to-transmissive ECD. Physical modeling tool, COMSOL, is introduced for complementary color matching. Through balancing the charge densities of two electrochromic electrodes, black-to-transmissive ECDs with record-high coloration efficiencies of 688 cm 2 /C and 437 cm 2 /C have been achieved for PAI|ECP-M and PAI|ECP-R, respectively. This study provides a general protocol for the design and fabrication of complementary ECDs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2021

RKKY Exchange Bias Mediated Ultrafast All-Optical Switching of a Ferromagnet

The discovery of ultrafast helicity-independent all-optical switching (HI-AOS), as well as picosecond all-electrical switching of a ferrimagnet, has inspired the ultrafast spintronics community to explore ultrafast switching of a ferromagnet to achieve practical ultrafast storage and memory devices. Two explored mechanisms of HI-AOS of a ferromagnet in ferromagnet-ferrimagnet heterostructure are: a) exploiting the indirect exchange coupling with and b) injection of non-local spin current originated from a switching ferrimagnet. Here, in this manuscript, exchange mediated HI-AOS of a Ruderman–Kittel–Kasuya–Yosida (RKKY) exchange coupled “[Co/Pt]-multilayers/Pt spacer/CoGd” heterostructure is demonstrated. The authors have measured layer-resolved static magnetic properties, single-shot HI-AOS, and magnetization dynamics of the ferromagnetic Co/Pt multilayers (MLs), that are ferromagnetically or antiferromagnetically coupled with ferrimagnetic CoGd layers. Time-resolved magnetization dynamics reveal a 3.5 ps switching time of the Co/Pt MLs, which is the fastest switching of a ferromagnet reported to date. Employing an extended microscopic three-temperature model, the temporal dynamics of the exchange coupled ferromagnet–ferrimagnet heterostructure are simulated, qualitatively and quantitatively explaining the experimental switching phenomena. This work experimentally as well as theoretically establishes the mechanism of exchange mediated all-optical switching of ferromagnet-ferrimagnet heterostructures, which can be integrated with a magnetic tunnel junction for efficient reading after ultrafast energy-efficient switching.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Theoretical perspective on phase stability and polarization switching in ferroelectric hafnia

Fluorite-based ferroelectric materials are revolutionizing the application space of polar semiconductors. These materials leverage robust polarization of extremely thin films, compatibility with the silicon chip processing, and decades of manufacturing experience to enable a new generation of ferroelectric memory devices. As a new paradigm for ferroelectrics, understanding of phase transitions and the switching mechanism in fluorites is essential both for advancing applications and for fundamental science. In this article, we outline the recent progress that has been made to understand the relative phase stability, phase transition and order parameter coupling, ferroelectric switching through unique nucleation and growth processes, and how defects affect these phases and processes. The main challenges, opportunities, and next steps for leveraging these materials for next-generation devices are reviewed.

Condensed Matter Physics↗