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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Communications Transceivers for Venus Surface Missions

The high temperature of the surface of Venus poses many difficulties. Previous Venus landers have only operated for short durations before succumbing to the heat. NASA Glenn Research Center conducted a study on communications for long duration Venus surface missions. I report the findings in this presentation. Current technology allows production of communications transceivers that can operate on the surface of Venus, at temperatures above 450 C and pressures of over 90 atmospheres. While these transceivers would have to be relatively simple, without much of the advanced signal processing often used in modern transceivers, since current and near future integrated circuits cannot operate at such high temperatures, the transceivers will be able to meet the requirements of proposed Venus Surface mission. The communication bands of interest are High Frequency or Very High Frequency (HFNHF) for communication between Venus surface and airborne probes (including surface to surface and air to air), and Ultra High Frequency (UHF) to Microwave bands for communication to orbiters. For HFNHF, transceivers could use existing vacuum tube technology. The packaging of the vacuum tubes may need modification, but the internal operating structure already operates at high temperatures. Using metal vacuum structures instead of glass, allows operation at high pressure. Wide bandgap transistors and diodes may be able to replace some of the thermionic components. VHF communications would be useful for line-of- sight operations, while HF would be useful for short-wave type communications using the Venusian ionosphere. UHF and microwave communications use magnetically focused thermionic devices, such as traveling wave tubes (TWTs), magnetron (M-type) amplifiers, and klystrons for high power amplifiers, and backward wave oscillators (BWOs) and reflex klystrons for oscillators. Permanent magnets are already in use in industry that can operate at 500 C. These magnets could focus electron beam tubes on the surface of Venus. While microwave windows will need to be designed for the high pressure, diamond windows have already been demonstrated, so high-pressure microwave windows can be designed and built. Thus, all of these devices could be useful for Venus surface missions. Current electronic power conditioners to supply the high voltages used in these microwave devices cannot operate at high temperatures, but earlier electronic power conditioners that used vacuum tubes can be modified to work at high temperature. Evaluating the various devices in this study, the M-type traveling wave tube (where a traveling wave structure is used in a crossed-field device, similar to the Amplitron used on the Apollo missions) stood out for the high power amplifier since it requires a single high voltage, simplifying the power supply design. Since the receiver amplifier is a low power amplifier, the loss of efficiency in linear beam devices without a depressed collector (and thus needing a single high voltage) is not important; a low noise TWT is a possible solution. Before solid-state microwave amplifiers were available, such TWTs were built with a 1-2 dB noise figure. A microwave triode or transistor made from a wide bandgap material may be preferable, if available. Much of the development work needed for Venusian communication devices will need to focus on the packaging of the devices, and their connections, but the technology is available to build transceivers that can operate on the surface of Venus indefinitely.

Force, Dale A.↗
NASA NTRS2005

500(deg)C electronics for harsh environments

Solid state vacuum devices (SSVDs) are a relatively new class of electronic devices. Innosys is a leading producer of high frequency SSVDs for a number of applications, including RF communications. SSVDs combine features inherent to both solid state and vacuum transistors. Electron transport can be by solid state or vacuum or both. The focus of this talk is on thermionic SSVDs, in which the primary vacuum transport is by thermionically liberated electron emission.

high temperature electronics↗
NASA NTRS2006

Arrays of Nano Tunnel Junctions as Infrared Image Sensors

Infrared image sensors based on high density rectangular planar arrays of nano tunnel junctions have been proposed. These sensors would differ fundamentally from prior infrared sensors based, variously, on bolometry or conventional semiconductor photodetection. Infrared image sensors based on conventional semiconductor photodetection must typically be cooled to cryogenic temperatures to reduce noise to acceptably low levels. Some bolometer-type infrared sensors can be operated at room temperature, but they exhibit low detectivities and long response times, which limit their utility. The proposed infrared image sensors could be operated at room temperature without incurring excessive noise, and would exhibit high detectivities and short response times. Other advantages would include low power demand, high resolution, and tailorability of spectral response. Neither bolometers nor conventional semiconductor photodetectors, the basic detector units as proposed would partly resemble rectennas. Nanometer-scale tunnel junctions would be created by crossing of nanowires with quantum-mechanical-barrier layers in the form of thin layers of electrically insulating material between them (see figure). A microscopic dipole antenna sized and shaped to respond maximally in the infrared wavelength range that one seeks to detect would be formed integrally with the nanowires at each junction. An incident signal in that wavelength range would become coupled into the antenna and, through the antenna, to the junction. At the junction, the flow of electrons between the crossing wires would be dominated by quantum-mechanical tunneling rather than thermionic emission. Relative to thermionic emission, quantum mechanical tunneling is a fast process.

Son, Kyung-Ah↗
DOE OSTI2023

Commissioning of the Low Energy Electron Gun Test Stand at the University of Chicago

We built a test stand for evaluating the performance of the thermionic electron sources for the electron lens project at the Integrable Optics Test Accelerator (IOTA) in Fermilab. The lens will be used to study nonlinear dynamics and electron cooling of 2.5 MeV protons with strong space charge. The test stand will validate the characteristics of the thermionic sources and the main parameters of the generated beams. In this paper we present the results of the commissioning of the UChicago test stand and validation of the hollow beam source.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Discovery of Stable Surfaces with Extreme Work Functions by High‐Throughput Density Functional Theory and Machine Learning

Abstract The work function is the key surface property that determines the energy required to extract an electron from the surface of a material. This property is crucial for thermionic energy conversion, band alignment in heterostructures, and electron emission devices. This work presents a high‐throughput workflow using density functional theory (DFT) to calculate the work function and cleavage energy of 33,631 slabs (58,332 work functions) that are created from 3,716 bulk materials. The number of calculated surface properties surpasses the previously largest database by a factor of ≈27. Several surfaces with an ultra‐low (<2 eV) and ultra‐high (>7 eV) work function are identified. Specifically, the (100)‐Ba‐O surface of BaMoO 3 and the (001)‐F surface of Ag 2 F have record‐low (1.25 eV) and record‐high (9.06 eV) steady‐state work functions. Based on this database a physics‐based approach to featurize surfaces is utilized to predict the work function. The random forest model achieves a test mean absolute error (MAE) of 0.09 eV, comparable to the accuracy of DFT. This surrogate model enables rapid predictions of the work function (≈ 10 5 faster than DFT) across a vast chemical space and facilitates the discovery of material surfaces with extreme work functions for energy conversion and electronic device applications.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Hyperdiffusion of dust particles in a turbulent tokamak plasma

In this work, the effect of plasma turbulence on the trajectories of dust particles is investigated for the first time. The dynamics of dust particles is computed using the ad hoc developed Dust Injection Simulator code, using a 3D turbulent plasma background computed with the TOKAM3X code. As a result, the evolution of the particle trajectories is governed by the ion drag force, and the shape of the trajectory is set by the Stokes number St∝a d /n 0 , with a d the dust radius and n 0 the density at the separatrix. The plasma turbulence is observed to scatter the dust particles, exhibiting a hyperdiffusive regime in all cases. The amplitude of the turbulent spread of the trajectories Δr 2 is shown to depend on the ratio Ku/St, with Ku∝u rms the Kubo number and urms the fluctuation level of the plasma flow. These results are compared with a simple analytical model, predicting Δr 2 ∝(Ku/St) 2 t 3 , or Δr 2 ∝(u rms n 0 /a d ) 2 t 3 . As the dust is heated by the plasma fluxes, thermionic emission sets the dust charge, originally negative, to slightly positive values. This results in a substantial reduction of the ion drag force through the suppression of its Coulomb scattering component. The dust grain inertia is then no longer negligible and drives the transition from a hyperdiffusive regime toward a ballistic one.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Sub-threshold ultrafast one-photon photoemission from a Cu(111) photocathode

Single-photon photoemission of electrons for incident photon energies below the surface work function is reported for a single-crystal Cu(111) photocathode. Spectral characterization of the quantum efficiency and mean transverse energy of the emitted electrons is shown to be consistent with emission from a thermalized hot electron distribution photoexcited on sub-picosecond time scales into an upper conduction band at the L-point of the Brillouin zone of copper. To our knowledge, this is the first time that such excited-state thermionic emission has been observed from a planar metal photocathode, and then from a commonly used photocathode material. The results, therefore, indicate the potential importance of such band structure dependent sub-threshold photoemission mechanisms on the performance of photocathodes employed for the generation of short electron pulses using sub-picosecond laser pulses. Consequently, the combined experimental and theoretical work presented in this paper contributes to solid-state photocathode-based research aimed at our understanding and selection (or discovery) of high brightness photo-electron sources required for many electron-based diffraction, imaging, and accelerator applications.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE

Here we report ultra-high responsivity of epitaxial (Sn x Ga 1–x ) 2 O 3 (TGO) Schottky UV-C photodetectors and experimentally identified the source of gain as deep-level defects, supported by first principles calculations. Epitaxial TGO films were grown by plasma-assisted molecular beam epitaxy on (–201) oriented n-type β-Ga 2 O 3 substrates. Fabricated vertical Schottky devices exhibited peak responsivities as high as 3.5 ×10 4 A/W at –5 V applied bias under 250 nm illumination with sharp cutoff shorter than 280 nm and fast rise/fall time in milliseconds order. Hyperspectral imaging cathodoluminescence (CL) spectra were examined to find the mid-bandgap defects, the source of this high gain. Irrespective of different tin mole fractions, the TGO epilayer exhibited extra CL peaks at the green band (~2.20 eV) not seen in β-Ga 2 O 3 along with enhancement of the blue emission-band (~2.64 eV) and suppression of the UV emission-band. Based on hybrid functional calculations of the optical emission expected for defects involving Sn in β-Ga 2 O 3 , V Ga –Sn complexes are proposed as potential defect origins of the observed green and blue emission-bands. Such complexes behave as acceptors that can efficiently trap photogenerated holes and are predicted to be predominantly responsible for the ultra-high photoconductive gain in the Sn-alloyed Ga 2 O 3 devices by means of thermionic emission and electron tunneling. Regenerating the V Ga –Sn defect complexes by optimizing the growth techniques, we have demonstrated a planar Schottky UV-C photodetector of the highest peak responsivity.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes

Studies of the radiation tolerance and electrical behavior of gallium nitride (GaN) based devices are important for the next generation of high-power and high-voltage electronics that may be subjected to harsh environments such as nuclear reactor and fusion facilities, particle accelerators, and post-denotation environments. Here, in this work, we study the behavior of Ga-polar and N-polar GaN Schottky diodes before and after exposure to fast and thermal + fast neutrons. Temperature-dependent current–voltage (I–V) and circular transmission line method (CTLM) measurements were used to study the electrical characteristics. A strong reduction in reverse leakage current and an increase in differential resistance in forward bias were observed after neutron irradiation. Thermionic emission (TE), Frenkel–Poole (FP) emission, and Fowler–Nordheim (FN) tunneling models were used to explain the forward and reverse I–V characteristics pre- and post-irradiation. The study confirms that Ga-polar and N-polar GaN Schottky diodes exhibit different electrical responses to fast and thermal neutron irradiations. The reverse bias characteristics of N-polar diodes are less affected after the fast neutron irradiation compared to Ga-polar diodes, while in the forward bias region, the electrical behavior after fast and thermal neutron irradiations is similar in Ga-polar and N-polar diodes. The results indicate that the role of orientation should be considered in the design of GaN-based radiation-tolerant electronics.

42 ENGINEERING↗
DOE OSTI2023

Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs

Hole injection through V-defect sidewalls into all quantum wells (QWs) of long wavelength GaN light emitting diodes had previously been proposed as means to increase efficiency of these devices. In this work, we directly tested the viability of this injection mechanism by electroluminescence and time-resolved photoluminescence measurements on a device in which QW furthest away from the p-side of the structure was deeper, thus serving as an optical detector for presence of injected electron–hole pairs. Emission from the detector well confirmed that, indeed, the holes were injected into this QW, which could only take place through the {$10\bar{1}1$} V-defect sidewalls. Unlike direct interwell transport by thermionic emission, this transport mechanism allows populating all QWs of a multiple QW structure despite the high potential barriers in the long wavelength InGaN/GaN QWs.

Atomic force microscopy↗
DOE OSTI2019

A Magnetized Electron Source For Ion Beam Cooling

A number of electron-ion collider facilities for nuclear physics research are under consid- eration in the United States. At Brookhaven National Lab (BNL), the eRHIC (electron Relativistic Heavy Ion Collider) facility would augment the existing ion/proton facility with an electron accelerator. Thomas Jefferson National Accelerator Facility (JLab) plans to use the existing CEBAF machine and add an ion/proton accelerator, as part of the Jefferson Lab Electron-Ion Collider (JLEIC). All such facilities require cooling of the ion beams in order to reach the luminosity goals. Different methods of cooling the ions using an electron beam are envisaged. BNL is pursuing coherent electron cooling and non-magnetized, bunched-beam cooling, while JLab is considering magnetized cooling. In addition to electron cooling, magnetized beams are of interest for other applica- tions, such as flat beam klystrons and novel means for producing bright beams for micro- undulators and compact X-ray sources. For example, flat beams generated from a mag- netized injector, in conjunction with low emittance, enable RF sources with frequencies above 100 GHz. While the market for high-performance injectors for electron cooling is limited, the market for high-frequency RF sources and compact X-ray systems is con- siderable. Thus, the design methodologies developed in this project have a wide range of applicability. In Phase I of this SBIR project, Xelera Research LLC performed simulations and calcu- lations to develop a prototype design for a magnetized electron injector that can be used as a source for cooling an ion beam. We developed general design methodologies and tech- niques that are applicable not only to specific machine designs but to other applications requiring magnetized injectors as well. In this Phase II SBIR project, Xelera Research LLC, in collaboration with a team at JLab, designed, built, and tested a thermionic elec- tron source for driving a magnetized electron cooler in a future electron-ion collider project. This device was delivered to JLab in July 2019 and achieved first beam in December 2019.

43 PARTICLE ACCELERATORS↗
NASA NTRS1963

SPACE ELECTRICAL POWER

Problems in electric power systems for space applications, emphasizing solar cells and thin- film cell research and including the solar- thermionic system

SOLAR POWER SYSTEM↗
NASA NTRS1964

Electric power generation

Electric power generation for space vehicles - batteries, solar cells, thermoelectric converters, magnetohydrodynamic converters, fuel cells, and thermionic converters

POWER GENERATOR↗