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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 649 records · Page 36
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Suppression of the vacuum space-charge effect in fs-photoemission by a retarding electrostatic front lens

The performance of time-resolved photoemission experiments at fs-pulsed photon sources is ultimately limited by the e–e Coulomb interaction, downgrading energy and momentum resolution. Here, we present an approach to effectively suppress space-charge artifacts in momentum microscopes and photoemission microscopes. A retarding electrostatic field generated by a special objective lens repels slow electrons, retaining the k-image of the fast photoelectrons. The suppression of space-charge effects scales with the ratio of the photoelectron velocities of fast and slow electrons. Fields in the range from -20 to 01100 V/mm for E kin = 100 eV to 4 keV direct secondaries and pump-induced slow electrons back to the sample surface. Ray tracing simulations reveal that this happens within the first 40 to 3 μm above the sample surface for E kin = 100 eV to 4 keV. An optimized front-lens design allows switching between the conventional accelerating and the new retarding mode. Time-resolved experiments at E kin = 107 eV using fs extreme ultraviolet probe pulses from the free-electron laser FLASH reveal that the width of the Fermi edge increases by just 30 meV at an incident pump fluence of 22 mJ/cm2 (retarding field -21 V/mm). For an accelerating field of +2 kV/mm and a pump fluence of only 5 mJ/cm 2 , it increases by 0.5 eV (pump wavelength 1030 nm). At the given conditions, the suppression mode permits increasing the slow-electron yield by three to four orders of magnitude. The feasibility of the method at high energies is demonstrated without a pump beam at E kin = 3830 eV using hard x rays from the storage ring PETRA III. The approach opens up a previously inaccessible regime of pump fluences for photoemission experiments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Electrostatic modulation of the lateral carrier density profile in field effect devices with nonlinear dielectrics

The properties of two-dimensional (2D) electronic systems are often effectively controlled using electrostatic gating. The geometry of such field effect devices influences the effectiveness of the gate and the carrier density profile in the 2D device. Here, in this work, we analyze the gate-induced spatial variations in the lateral carrier density in patterned LaAlO 3 /SrTiO 3 devices. We model the electrostatics of the 2D interface using the Thomas-Fermi approximation and compute the gate-induced charge distribution at the interface. We show that the electric field lines generated by the gate are focused at the edges of the device, causing an increased depletion near its edges. This effect is accentuated in LaAlO 3 /SrTiO 3 due to the large, nonlinear dielectric constant of the substrate, and the large distance between the gate electrode and the interface. We experimentally demonstrate one consequence of this effect by directly imaging current distributions in gated heterostructures, finding that insulating regions nucleate at the edges of the device due to the gate. Our results suggest that device geometry and choice of dielectric materials control the charge distribution in 2D systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Electric field driven domain wall dynamics in BaTiO 3 nanoparticles

We report a detailed investigation into the response of single BaTiO 3 (BTO) nanocrystals under applied electric fields (E-field) using Bragg coherent diffraction imaging. Our study reveals pronounced domain wall migration and expansion of a sample measure under applied electric field. The changes are most prominent at the surface of the nanocrystal, where the lack of external strain allows greater domain wall mobility. The observed domain shifts are correlated to the strength and orientation of the applied E-field, following a side-by-side domain model from Suzana []. Notably, we identified a critical electric field strength of 3 MV/m, which leads to irreversible structural changes, suggesting plastic deformation. The findings highlight how surface effects and intrinsic defects contribute to the enhanced dielectric properties of BTO at the nanoscale, in contrast to bulk materials, where strain limits domain mobility. These findings deepen our understanding of nanoscale dielectric behavior and inform the design of advanced nanoelectronic devices. Published by the American Physical Society 2025

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Order-disorder versus displacive transitions in Jahn-Teller active layered materials

Large anharmonic vibrations often play a crucial role in dynamically stabilizing crystalline phases whose structures are unstable at low temperature. Although the average structure of such phases can be measured through diffraction experiments, their local structure remains a challenge to characterize and understand. Dynamically stabilized phases are often classified as order/disorder or displacive based on the qualitative nature of their local structure. A robust understanding of how chemistry determines this distinction in behavior, however, is lacking. This article presents a parametric study of an anharmonic vibrational model that describes the transition from a cooperative to a noncooperative Jahn-Teller distortion in layered oxides—a class of materials widely used in Li-ion and Na-ion batteries. The results illustrate how the shape of the energy landscape determines the extent to which the high-temperature phase has order/disorder vs displacive character. In this work, we find that the nature of the high-temperature phase is determined by a competition between the strength of the elastic coupling between Jahn-Teller distortions at nearby sites and the energy scale driving the Jahn-Teller distortion. A comparison of the model to energy landscapes calculated with density-functional theory suggests that the high-temperature phases of the Jahn-Teller active layered compounds LiNiO 2 , NaNiO 2 , LiMnO 2 , and NaMnO 2 exhibit order/disorder character.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Fault Location Using the Natural Frequency of Oscillation of Current Discharge in MTdc Networks

This paper discusses a novel offline-fault location approach using single ended measurements. The natural dissipation of the circuit parameters are considered for fault location. A relationship between the damped natural frequency of oscillation of the transmission line current and fault location is established. The hybrid dc circuit breaker (dcCB) interrupts the fault current, whereby the transmission line current attenuates under the absence of any driving voltage source. The line capacitance discharges into the fault at a specific frequency of oscillation and rate of attenuation. Utilizing this information, the fault location in a multi-terminal direct current (MTdc) network can be obtained. A three terminal radial model of a MTdc is used for performance evaluation of the proposed method using Power System Computer Aided Design (PSCAD)/Electromagnetic Transients including dc (EMTdc).

42 ENGINEERING↗
DOE OSTI2023

AutoTG: Reinforcement Learning-Based Symbolic Optimization for AI-Assisted Power Converter Design

Power converters are pervasive in modern electronic component design. They can be found in all electronic devices from household appliances and cellphone chargers to vehicles. Currently, designing new circuit topologies is hard because it requires human expertise based on experience and is difficult to automate. However, artificial-intelligence-assisted design can significantly facilitate the development of new power converters and/or improve the final result. Intelligently designed highly efficient power converters can have a significant effect on many important attributes, such as power efficiency, layout size, cost, heat dissemination, energy requirements, etc. We propose Autonomous Topology Generator (AutoTG), a reinforcement-learning-based framework that generates power converter topology candidates based on user specifications, optimized for user preferences. By modeling power converter design as a symbolic optimization problem, we sequentially sample components in an autoregressive manner until new topologies are formed, providing both the topology specification and the sizing (magnitude of each component parameter) of the proposed power converter. Here, we provide an empirical evaluation and show that AutoTG is able to generate varied high-efficiency topologies within component restrictions based on user input and show that previously unknown topologies can be found for further evaluation.

(AI)-based design↗
DOE OSTI2020

Fault Current Control and Protection in a Standalone DC Microgrid Using Adaptive Droop and Current Derivative

This report presents a novel fault detection, characterization, and fault current control algorithm for a standalone solar-photovoltaic (PV) based dc microgrids. The protection scheme is based on the current derivative algorithm. The overcurrent and current directional/differential comparison based protection schemes are incorporated for the dc microgrid fault characterization. For a low impedance fault, the fault current is controlled based on the current/voltage thresholds and current direction. Generally, the droop method is used to control the power-sharing between the converters by controlling the reference voltage. In this article, an adaptive droop scheme is also proposed to control the fault current by calculating a virtual resistance R droop , and to control the converter output reference voltage. For a high impedance fault, differential comparison method is used to characterize the fault. These algorithms effectively control the converter pulsewidth and reduce the flow of source current from a particular converter, which helps to increase the fault clearing time. Additionally, a trip signal is sent to the corresponding dc circuit breaker (DCCB), to isolate the faulted converter, feeder or a dc bus. The dc microgrid protection design procedure is detailed, and the performance of the proposed method is verified by simulation analysis.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

On the Feasibility of 1T Ferroelectric FET Memory Array

To fully exploit the ferroelectric field effect transistor (FeFET) as compact embedded nonvolatile memory for various computing and storage applications, it is desirable to use a single FeFET (1T) as a unit cell and arrange the cells into an array. However, many write mechanisms for an 1T FeFET array reported in the literature are yet to be validated experimentally. In this work, we performed a comprehensive experimental characterization on the write operations in an 1T- NOR and 1T- AND array using n-channel bulk FeFETs. We discovered that: 1) the source/drain contact can only supply minority carriers (i.e., electrons) to the channel for polarization screening during the low- V TH state programming; 2) the body contact can not only supply majority carriers (i.e., holes) for efficient high- V TH state write, but also depletion charge for low- V TH state programming, though with lower efficiency; and 3) during the low/high- V TH programming, only the path that can supply negative/positive screening charges, respectively, need to respond, which necessitates the application of proper write biases on the corresponding terminal. Based on the understanding of these write mechanisms, we show the importance of localized body contact or column-wise body contact for the successful high- V TH state programming. We also show that the previously proposed C- AND write scheme fails to program the FeFET to the low- V TH state for our devices. Finally, we propose several write schemes for both 1T- AND and 1T- NOR arrays for various scenarios providing insights for choosing the appropriate write scheme, which will facilitate the adoption of 1T FeFET memory arrays for emerging applications.

FeFET↗
DOE OSTI2025

The Implications of Collisions on the Spatial Profile of Electric Potential and the Space-Charge-Limited Current

The space-charge-limited current (SCLC) in a vacuum diode is given by the Child-Langmuir law (CLL), whose electric potential ϕ(x) ∝ (x/D) 4/3 , where x is the spatial coordinate across the gap and D is the gap separation distance. For a collisional diode, SCLC is given by the Mott-Gurney law (MGL) and ϕ(x) ∝ (x/D) 3/2 . Here, we apply a capacitance argument for SCLC and use the transit time from a recent exact solution for collisional SCLC to show that ϕ(x) ∝ (x/D)ξ for a general collisional gap, where 4/3 ≤ ξ ≤ 3/2 . Furthermore, ξ is strictly a function of νT, where ν is the collision frequency and T is the electron transit time. Using this definition of ξ, we estimate the spatial dependence of the electron velocity and use the gap capacitance to derive an analytic equation for collisional SCLC that agrees within ~4.5% of the exact solution that requires solving parametrically through T. This analytic equation for general ξ asymptotically recovers the CLL as ν → 0 and the MGL as ν → ∞. As a result, matching these limits shows that ξ ≈ 1.40 and V ∝ D 2 ν 2 at the transition from a vacuum to a collisional diode for any device condition.

Anodes↗
DOE OSTI2025

Design and Preliminary Experimental Results on a Uniform-Field Test Fixture for Power Flow Experiments

Electrodes that produce a uniform electric field across their surfaces are desired for a variety of high-voltage systems including spark-gap switches and transversely excited atmospheric lasers. Here, the implementation of uniform-field electrodes to a parallel-plate load is described for the study of vacuum power flow under pulsed-power applications. We begin with an overview of general uniform-field geometries, and provide an open-source program that generates these geometries as described by Ernst. Following that, a modification to an existing power-flow experimental platform, that adopts a uniform-field geometry, is introduced and its utility is described. Lastly, preliminary experimental results are presented and future steps are outlined.

Capacitors↗
DOE OSTI2023

AI & Physics-Based Bad Command/Data Detection in Large Power Electronics Systems: Multi-Port Autonomous Reconfigurable Solar Power Plant (MARS)

Detection of bad data from measurement sensors and bad commands from control centers need to be carried out to avoid instabilities within large power electronics systems. Towards the same, in this paper, model and data driven methods are proposed to identify anomalies in measured data and commands received by large power electronics systems. The large power electronics system considered in this paper is a multi-port autonomous reconfigurable solar power plant (MARS), which consists of photovoltaic (PV) and energy storage systems (ESSs) that connect to high-voltage direct current (HVdc) system and transmission ac power grid. The proposed algorithms in the MARS power plant to detect bad data from measurements and bad commands from control centers are evaluated in simulations and hardware-in-the-loop (HIL) tests. Furthermore, it has been observed that the proposed algorithms are able to detect bad measurements and commands in all the use cases evaluated.

14 SOLAR ENERGY↗
DOE OSTI2025

Critical Clearing Time for Droop-Controlled Grid-Forming Inverters With Circular Current Limiting and Virtual Impedance Current Limiting

The critical clearing time is a crucial parameter for assessing the large-signal stability of grid-forming (GFM) inverters. Variations in current limiters can significantly impact an inverter's transient behavior during large disturbances. Here, this letter introduces a method based on the power-angle relationship to evaluate the fault recovery of a droop-controlled GFM inverter under a three-phase bolted fault scenario, considering both the circular current limiter and the virtual impedance method. High-fidelity simulations validate the accuracy of the proposed formulas in estimating the critical clearing time of the GFM inverter.

42 ENGINEERING↗
DOE OSTI2023

Control System of Multi-Port Autonomous Reconfigurable Solar Power Plant (MARS) & HIL Platforms for Design

Multi-port autonomous reconfigurable solar power plant (MARS) provides an attractive alternative to connect photovoltaic (PV) and energy storage systems (ESSs) to high-voltage direct current (HVdc) links and high-voltage alternating current (ac) grids. In this paper, a unique hierarchical control system of MARS is proposed and evaluated. To evaluate the control system and associated algorithms in early-stage research of complex architectures like MARS, it is important to develop unique suitable hardware-in-the-loop (HIL) platforms. In this paper, the HIL platforms for MARS to evaluate the performance of the hierarchical control system and the control algorithms implemented are presented. Further, they help with the design process of control systems. The real-time simulation models and algorithms that are utilized for MARS in the HIL platforms are also discussed in the paper. The HIL experiments of the control system of MARS showcase the capability to provide continuity of operation under faults and frequency support to the power grid during loss of generation. They also showcase the stability of the proposed hierarchical control system of MARS.

14 SOLAR ENERGY↗
DOE OSTI2022

Fiber Uncertainty Visualization for Bivariate Data With Parametric and Nonparametric Noise Models

Visualization and analysis of multivariate data and their uncertainty are top research challenges in data visualization. Constructing fiber surfaces is a popular technique for multivariate data visualization that generalizes the idea of level-set visualization for univariate data to multivariate data. Here, in this paper, we present a statistical framework to quantify positional probabilities of fibers extracted from uncertain bivariate fields. Specifically, we extend the state-of-the-art Gaussian models of uncertainty for bivariate data to other parametric distributions (e.g., uniform and Epanechnikov) and more general nonparametric probability distributions (e.g., histograms and kernel density estimation) and derive corresponding spatial probabilities of fibers. In our proposed framework, we leverage Green's theorem for closed-form computation of fiber probabilities when bivariate data are assumed to have independent parametric and nonparametric noise. Additionally, we present a nonparametric approach combined with numerical integration to study the positional probability of fibers when bivariate data are assumed to have correlated noise. For uncertainty analysis, we visualize the derived probability volumes for fibers via volume rendering and extracting level sets based on probability thresholds. We present the utility of our proposed techniques via experiments on synthetic and simulation datasets.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Effect of Substrate Temperature on the Electrochemical and Supercapacitance Properties of Pulsed Laser-Deposited Titanium Oxynitride Thin Films

Electrocatalytically active titanium oxynitride (TiNO) thin films were fabricated on commercially available titanium metal plates using a pulsed laser deposition method for energy storage applications. The elemental composition and nature of bonding were analyzed using X-ray photoelectron spectroscopy (XPS) to reveal the reacting species and active sites responsible for the enhanced electrochemical performance of the TiNO electrodes. Symmetric supercapacitor devices were fabricated using two TiNO working electrodes separated by an ion-transporting layer to analyze their real-time performance. The galvanostatic charge–discharge studies on the symmetric cell have indicated that TiNO films deposited on the polycrystalline titanium plates at lower temperatures are superior to TiNO films deposited at higher temperatures in terms of storage characteristics. For example, TiNO films deposited at 300 °C exhibited the highest specific capacity of 69 mF/cm 2 at 0.125 mA/cm 2 with an energy density of 7.5 Wh/cm 2 . The performance of this supercapacitor (300 °C TiNO) device is also found to be ~22% better compared to that of a 500 °C TiNO supercapacitor with a capacitance retention ability of 90% after 1000 cycles. Furthermore, the difference in the electrochemical storage and capacitance properties is attributed to the reduced leaching away of oxygen from the TiNO films by the Ti plate at lower deposition temperatures, leading to higher oxygen content in the TiNO films and, consequently, a high redox activity at the electrode/electrolyte interface.

30 DIRECT ENERGY CONVERSION↗