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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 649 records · Page 36
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Here, ferroelectric materials have remained one of the major focal points of condensed matter physics and materials science for over 50 years. In the last 20 years, the development of voltage-modulated scanning probe microscopy techniques, exemplified by Piezoresponse force microscopy (PFM) and associated time- and voltage spectroscopies, opened a pathway to explore these materials on a single-digit nanometer level. Consequently, domain structures and walls and polarization dynamics can now be imaged in real space. More generally, PFM has allowed studying electromechanical coupling in a broad variety of materials ranging from ionics to biological systems.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Piezoresponse of ferroelectric films in ferroionic states: Time and voltage dynamics

Here, the interplay between electrochemical surface charges and bulk ferroelectricity in thin films gives rise to a continuum of coupled ferro-ionic states. These states are exquisitely sensitive to chemical and electric conditions at the surfaces, applied voltage, and oxygen pressure. Using the analytical approach combining the Ginzburg-Landau-Devonshire description of the ferroelectricity with the Langmuir adsorption isotherm for the ions at the film surface, we have studied the temperature-, time- and field-dependent polarization changes and electromechanical response of the ferro-ionic states. The responses are found to be inseparable in thermodynamic equilibrium and at low frequencies of applied voltage. The states become separable in the high frequency dynamic mode due to the several orders of magnitude difference in the relaxation times of ferroelectric polarization and surface ion charge density. These studies provide an insight into the dynamic behavior of nanoscale ferroelectrics with an open surface exposed to different kinds of the electrochemically active gaseous surrounding.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Investigation of periodically driven systems by x-ray absorption spectroscopy using asynchronous data collection mode

Here, we report the development, testing, and demonstration of a setup for modulation excitation spectroscopy experiments at the Inner Shell Spectroscopy beamline of National Synchrotron Light Source - II. A computer algorithm and dedicated software were developed for asynchronous data processing and analysis. We demonstrate the reconstruction of X-ray absorption spectra for different time points within the modulation pulse using a model system. This setup and the software are intended for a broad range of functional materials which exhibit structural and/or electronic responses to the external stimulation, such as catalysts, energy and battery materials, and electromechanical devices.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Designing pseudocubic perovskites with enhanced nanoscale polarization

A crystal-chemical framework has been proposed for the design of pseudocubic perovskites with nanoscale ferroelectric order, and its applicability has been demonstrated using a series of representative solid solutions that combined ferroelectric (K 0.5 Bi 0.5 TiO 3 , BaTiO 3 , and PbTiO 3 ) and antiferroelectric (Nd-substituted BiFeO 3 ) end members. The pseudocubic structures obtained in these systems exhibited distortions that were coherent on a scale ranging from sub-nanometer to tens of nanometers, but, in all cases, the macroscopic distortion remained unresolvable even if using high-resolution X-ray powder diffraction. Different coherence lengths for the local atomic displacements account for the distinctly different dielectric, ferroelectric, and electromechanical properties exhibited by the samples. The guidelines identified provide a rationale for chemically tuning the coherence length to obtain the desired functional response.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Reduction of asymmetric wall force in ITER disruptions with fast current quench

One of the problems caused by disruptions in tokamaks is the asymmetric electromechanical force produced in conducting structures surrounding the plasma. The asymmetric wall force in ITER asymmetric vertical displacement event (AVDE) disruptions is calculated in nonlinear 3D MHD simulations. It is found that the wall force can vary by almost an order of magnitude, depending on the ratio of the current quench time to the resistive wall magnetic penetration time. In ITER, this ratio is relatively low, resulting in a low asymmetric wall force. In JET, this ratio is relatively high, resulting in a high asymmetric wall force. Previous extrapolations based on JET measurements have greatly overestimated the ITER wall force. Here, it is shown that there are two limiting regimes of AVDEs, and it is explained why the asymmetric wall force is different in the two limits.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Temperature-independent giant dielectric response in transitional BaTiO 3 thin films

Ferroelectric materials exhibit the largest dielectric permittivities and piezoelectric responses in nature, making them invaluable in applications from supercapacitors or sensors to actuators or electromechanical transducers. The origin of this behavior is their proximity to phase transitions. However, the largest possible responses are most often not utilized due to the impracticality of using temperature as a control parameter and to operate at phase transitions. This has motivated the design of solid solutions with morphotropic phase boundaries between different polar phases that are tuned by composition and that are weakly dependent on temperature. Thus far, the best piezoelectrics have been achieved in materials with intermediate (bridging or adaptive) phases. But so far, complex chemistry or an intricate microstructure has been required to achieve temperature-independent phase-transition boundaries. Here, we report such a temperature-independent bridging state in thin films of chemically simple BaTiO3. A coexistence among tetragonal, orthorhombic, and their bridging low-symmetry phases are shown to induce continuous vertical polarization rotation, which recreates a smear in-transition state and leads to a giant temperature-independent dielectric response. The current material contains a ferroelectric state that is distinct from those at morphotropic phase boundaries and cannot be considered as ferroelectric crystals. We believe that other materials can be engineered in a similar way to contain a ferroelectric state with gradual change of structure, forming a class of transitional ferroelectrics. Similar mechanisms could be utilized in other materials to design low-power ferroelectrics, piezoelectrics, dielectrics, or shape-memory alloys, as well as efficient electro- and magnetocalorics.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Advances in terahertz solid-state physics and devices

Terahertz (THz) science and technology have attracted tremendous attention owing to their potential applications in areas including high-speed communications, nondestructive evaluation, biological and medical sensing, and national security.1,2 Terahertz waves bridge electronics and photonics, as well as classical and quantum physics, making them equally attractive for fundamental studies of novel physical phenomena. To realize a broad range of real terahertz applications, it is essential to develop compact solid- state devices for terahertz sources, detectors, modulators, and compact systems. These devices often employ quantum materials and heterostructures and can incorporate other features including carrier transfer using atomic layer epitaxy, micro- and electromechanical systems, plasmonic resonators, and metamaterials. To optimize these devices, we have to understand and control ultrafast carrier dynamics in these advanced materials. Furthermore, we have organized a Special Topic in the Journal of Applied Physics to highlight the state-of-the-art in terahertz solid-state devices while also unveiling the properties of these materials on an ultrafast timescale.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Acceptor dopant mediated electrical property modification in Bi0.5Na0.5TiO3-based piezoceramic

The effect of Mn and Fe dopants on the electromechanical and electrochemical properties of 0.88[Bi 0.5 Na 0.5 ]TiO 3 –0.08[Bi 0.5 K 0.5 ]TiO 3 –0.04[Bi 0.5 Li 0.5 ]TiO 3 piezoceramic is investigated with particular emphasis on complex impedance in the temperature range from 450 to 600 °C. The impedance spectra have been simulated with equivalent circuits in order to extract bulk and grain boundary characteristics and to determine activation energies of conduction. Mn and Fe dopants considerably enhance the mechanical quality factor and decrease the dielectric loss compared to the undoped composition. Mn doping leads to dramatically higher resistivity in the bulk and a modest increase in the bulk activation energy. On the other hand, conductivity increases dramatically via Fe doping with a significant lowering of activation energy in the bulk and corresponding raising of the activation energy at grain boundaries in comparison to Mn-doped and undoped ceramic. The bulk conductivity of Fe-doped piezoceramic reaches as high as 0.01 S cm -1 at 600 °C.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Diffused morphotropic phase boundary in relaxor-PbTiO 3 crystals: High piezoelectricity with improved thermal stability

Solid solution ferroelectrics are the most widely used piezoelectric material for numerous electromechanical applications, including sensors, actuators, and transducers. A milestone in ferroelectric research is the discovery of the morphotropic phase boundary that was first reported in Pb(Zr x Ti 1–x )O 3 , which has been extensively solicited to improve the performance of various solid solution ferroelectrics, including those having the highest piezoelectricity known today. However, due to the inherent correlation between phase transition and thermodynamic imbalance, the efforts of building the phase boundary encounter the challenge that high performance materials are generally accompanied by property instability. In this paper, we report a comprehensive study on the crystalline symmetry and polar nano-regions in relaxor-PbTiO 3 crystals by synchrotron measurements and property characterizations. In contrast to the common belief that the morphotropic phase boundary is a narrow composition region, the morphotropic phase boundary in ternary Pb(In 1/2 Nb 1/2 )O 3 -Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 is demonstrated as an extensive region covering at least 9% of the PbTiO 3 content. Such a diffused morphotropic phase boundary is associated with the intensive interaction of polar nano-regions, leading to high piezoelectricity (>1500 pC/N) with greatly improved thermal stability, where the piezoelectric variation is ~90% over the temperature range of 273–373 K, which is about a factor of 3 lower compared to its binary counterpart Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 . This work sheds light on the fundamental understanding of nanoscale inhomogeneity and macroscopic symmetry in relaxor-PbTiO 3 , and successfully interlinks the structure and properties in complex solid solutions. The existence of a diffused morphotropic phase boundary is also expected to benefit other ferroic systems beyond ferroelectrics, such as ferromagnetic and multiferroic materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Structure and good piezoelectric performance in the complex system of Pb[(Zn,Ni)Nb]O 3 –Pb[(In,Yb)Nb]O 3 –Pb(Zr,Hf,Ti)O 3

High-performance piezoelectrics are always demanded for the high-end application. In this study, a complex piezoelectric system of 0.49Pb(Zn 1/2 Ni 1/2 ) 1/3 Nb 2/3 O 3 – x Pb(In 1/2 Yb 1/2 ) 1/2 Nb 1/2 O 3 –(0.51 – x )Pb(Zr 1/2 Hf 1/2 ) 0.1 Ti 0.9 O 3 (0.16 ≤ x ≤ 0.23) was fabricated through the solid-state method. The structure, ferroelectric, piezoelectric, and dielectric properties were investigated. The optimum piezoelectric coefficient d 33 of 761 pC/N, high Curie temperature of 169 °C, dielectric permittivity ( ε r ) of 4557, and electromechanical coupling coefficient ( k p ) of 63% were found at the morphotropic phase boundary composition of x = 0.19, which are superior to other complex piezoelectric materials. In particular, a significant large-signal d 33 * of 913 pm/V and low strain hysteresis (6%) was obtained in the temperature range of 20–170 °C. Temperature-dependent x-ray diffraction (XRD) has demonstrated that good temperature stability is put down to the structure stability. The agreement between the calculated lattice strain from in situ high-energy synchrotron XRD data and the macroscopic measurements suggests that the large lattice strain has a dominant contribution to the high piezoelectric response. The high piezoelectric performance and good temperature stability makes it potential for application.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Measurements of a quantum bulk acoustic resonator using a superconducting qubit

Phonon modes at microwave frequencies can be cooled to their quantum ground state using conventional cryogenic refrigeration, providing a convenient way to study and manipulate quantum states at the single phonon level. Phonons are of particular interest because mechanical deformations can mediate interactions with a wide range of different quantum systems, including solid-state defects, superconducting qubits, and optical photons when using optomechanically active constructs. Phonons, thus, hold promise for quantum-focused applications as diverse as sensing, information processing, and communication. Here, we describe a piezoelectric quantum bulk acoustic resonator (QBAR) with a 4.88 GHz resonant frequency, which, at cryogenic temperatures, displays large electromechanical coupling strength combined with a high intrinsic mechanical quality factor, Q i ≈ 4.3 × 10 4 . Using a recently developed flip-chip technique, we couple this QBAR resonator to a superconducting qubit on a separate die and demonstrate the quantum control of the mechanics in the coupled system. Furthermore, this approach promises a facile and flexible experimental approach to quantum acoustics and hybrid quantum systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

High thermal conductivity and ultrahigh thermal boundary conductance of homoepitaxial AlN thin films

Wurtzite aluminum nitride (AlN) has attracted increasing attention for high-power and high-temperature operations due to its high piezoelectricity, ultrawide-bandgap, and large thermal conductivity k. The k of epitaxially grown AlN on foreign substrates has been investigated; however, no thermal studies have been conducted on homoepitaxially grown AlN. In this study, the thickness dependent k and thermal boundary conductance G of homoepitaxial AlN thin films were systematically studied using the optical pump–probe method of frequency-domain thermoreflectance. Our results show that k increases with the thickness and k values are among the highest reported for film thicknesses of 200 nm, 500 nm, and 1 μm, with values of 71.95, 152.04, and 195.71 W/(mK), respectively. Our first-principles calculations show good agreement with our measured data. Remarkably, the G between the epilayer and the substrate reported high values of 328, 477, 1180, and 2590 MW/(m 2 K) for sample thicknesses of 200 nm, 500 nm, 1 μm, and 3 μm, respectively. The high k and ultrahigh G of homoepitaxially grown AlN are very promising for efficient heat dissipation, which helps in device design and has advanced applications in micro-electromechanical systems, ultraviolet photonics, and high-power electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

A method for infrared sensing based on oscillating zero power microelectromechanical photoswitches

This paper presents an interesting new method for measuring infrared (IR) radiation using a micromechanical photoswitch (MP). By leveraging the event-driven narrowband IR detection capability of an MP, electrostatic pull-in, and a novel integrated thermomechanical feedback mechanism, we show for the first time a zero-standby power IR sensor that can not only detect above-threshold IR power levels (>600 nW), but also generates an oscillating electromechanical pulse waveform whose frequency is a function of the incident IR power level. The device design, the theoretical model for the proposed idea, and the experimental demonstration of the mechanism are shown. The unique capability of zero-standby power IR detection and frequency-tunable AC waveform generation from a constant input signal (IR radiation) without the need for additional electronics promises to enable new functionalities for such remote wake-up sensors beyond simply detection, with potential uses in microrobotics and low-power computing.

Rajaram, Vageeswar (ORCID:0000000199546844)↗
DOE OSTI2023

Multiscale electric-field imaging of polarization vortex structures in PbTiO 3 /SrTiO 3 superlattices

In ferroelectric heterostructures, the interaction between intrinsic polarization and the electric field generates a rich set of localized electrical properties. The local electric field is determined by several connected factors, including the charge distribution of individual unit cells, the interfacial electromechanical boundary conditions, and chemical composition of the interfaces. However, especially in ferroelectric perovskites, a complete description of the local electric field across micro-, nano-, and atomic-length scales is missing. Here, by applying four-dimensional scanning transmission electron microscopy (4D STEM) with multiple probe sizes matching the size of structural features, we directly image the electric field of polarization vortices in (PbTiO 3 ) 16 /(SrTiO 3 ) 16 superlattices and reveal different electric field configurations corresponding to the atomic scale electronic ordering and the nanoscale boundary conditions. The separability of two different fields probed by 4D STEM offers the possibility to reveal how each contributes to the electronic properties of the film.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Defect control strategies for Al 1- x Gd x N alloys

Tetrahedrally bonded III-N and related alloys are useful for a wide range of applications from optoelectronics to dielectric electromechanics. Heterostructural AlN-based alloys offer unique properties for piezoelectrics, ferroelectrics, and other emerging applications. Atomic-scale point defects and impurities can strongly affect the functional properties of materials, and therefore, it is crucial to understand the nature of these defects and the mechanisms through which their concentrations may be controlled in AlN-based alloys. In this study, we employ density functional theory with alloy modeling and point defect calculations to investigate native point defects and unintentional impurities in Al 1-x Gd x N alloys. Among the native defects that introduce deep midgap states, nitrogen vacancies (V N ⁠) are predicted to be in the highest concentration, especially under N-poor growth conditions. We predict and experimentally demonstrate that V N formation can be suppressed in thin films through growth in N-rich environments. We also find that Al 1-x Gd x N alloys are prone to high levels of unintentional O incorporation, which indirectly leads to even higher concentrations of deep defects. Growth under N-rich/reducing conditions is predicted to minimize and partially alleviate the effects of O incorporation. The results of this study provide valuable insights into the defect behavior in wurtzite nitride-based alloys, which can guide their design and optimization for various applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Polarization near dislocation cores in SrTiO 3 single crystals: The role of flexoelectricity

Spontaneous polarization as large as ~28 μC/cm 2 was recently observed around the dislocation cores in non-polar SrTiO 3 bulk crystals, and its origin was attributed to the flexoelectric effect, i.e., polarization induced by strain gradients. However, the roles of flexoelectricity, relative to other electromechanical contributions, and the nature of dislocations, i.e., edge vs screw dislocations in the induced polarization, are not well understood. In this work, we study the role of flexoelectricity in inducing polarization around three types of dislocation cores in SrTiO 3 : b= a(100) edge dislocation, b= a(110) edge dislocation, and b= a(010) screw dislocation, where b is the Burgers vector. For the edge dislocations, polarization can be induced by electrostriction alone, while flexoelectricity is essential for stabilizing the symmetric polarization pattern. The shear component of the flexoelectric tensor has a dominant effect on the magnitude and spatial distribution of the flexoelectric polarization. In contrast, no polarization is induced around the b= a(010) screw dislocation through either electrostriction or flexoelectricity. Finally, our findings provide an in-depth understanding of the role of flexoelectricity in inducing polarization around dislocation cores and offer insights into the defect engineering of dielectric/ferroelectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

From prediction to experimental realization of ferroelectric wurtzite Al1− x Gd x N alloys

AlN-based alloys find widespread application in high-power microelectronics, optoelectronics, and electromechanics. The realization of ferroelectricity in wurtzite AlN-based heterostructural alloys has opened up the possibility of directly integrating ferroelectrics with conventional microelectronics based on tetrahedral semiconductors, such as Si, SiC, and III–Vs, enabling compute-in-memory architectures, high-density data storage, and more. The discovery of AlN-based wurtzite ferroelectrics has been driven to date by chemical intuition and empirical explorations. Here, we demonstrate the computationally-guided discovery and experimental demonstration of new ferroelectric wurtzite Al1−xGdxN alloys. First-principles calculations indicate that the minimum energy pathway for switching changes from a collective to an individual switching process with a lower overall energy barrier, at a rare-earth fraction x with x > 0.10–0.15. Experimentally, ferroelectric switching is observed at room temperature in Al1−xGdxN films with x > 0.12, which strongly supports the switching mechanisms in wurtzite ferroelectrics proposed previously [Lee et al., Sci. Adv. 10, eadl0848 (2024)]. This is also the first demonstration of ferroelectricity in an AlN-based alloy with a magnetic rare-earth element, which could pave the way for additional functionalities such as multiferroicity and opto-ferroelectricity in this exciting class of AlN-based materials.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Microdisplays in spatial light modulators

The characteristics of modern microdisplays based on liquid crystals and electromechanical micromirrors are considered. These displays, being spatial light modulators, can rapidly generate large optical data arrays to be recorded as holograms and used for data processing. The potential of microdisplays for visualising digital holograms in real time is estimated. (invited paper)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗