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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 649 records · Page 36

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NASA NTRS1991

Weld-Bead Profilometer Rejects Optical Noise

Optoelectronic sensor measures profile of weld seam or weld bead along line perpendicular to seam. Illuminated by fan of laser light. Image of line digitized and converted to profile of height or depth versus transverse position. Intended to be part of highly automated welding system, used in automatic tracking of seam or automatic profiling of weld bead for immediate evaluation and assurance of quality during welding process. Requires little maintenance other than cleaning glass windows protecting laser and camera.

Kennedy, Larry Z.↗

NASA NTRS1991

High-Gain AlxGa1-xAs/GaAs Transistors For Neural Networks

High-gain AlxGa1-xAs/GaAs npn double heterojunction bipolar transistors developed for use as phototransistors in optoelectronic integrated circuits, especially in artificial neural networks. Transistors perform both photodetection and saturating-amplification functions of neurons. Good candidates for such application because structurally compatible with laser diodes and light-emitting diodes, detect light, and provide high current gain needed to compensate for losses in holographic optical elements.

Kim, Jae-Hoon↗

NASA NTRS1991

High-Power AlGaAs Quantum-Well Lasers On Si Substrates

AlxGa1-xAs lasers of graded-index-of-refraction, separate-confinement-heterostructure, single-quantum-well type fabricated on silicon substrates by migration-enhanced molecular-beam epitaxy followed by metalorganic vapor-phase epitaxy. They are intermediate products of continuing effort to develop low-threshold-current, high-efficiency lasers for parallel optical interconnections between large-scale optoelectronic integrated circuits.

Kim, Jae-Hoon↗

NASA NTRS1990

Growth and properties of Hg-based quantum well structures and superlattices

An overview of the properties of HgTe-CdTe quantum well structures and superlattices (SL) is presented. These new quantum structures are candidates for use as new long wavelength infrared (LWIR) and very long wavelength infrared (VLWIR) detectors, as well as for other optoelectronic applications. Much has been learned within the past two years about the physics of such structures. The valence band offset has been determined to be approx. 350 meV, independent of temperature. The occurrence of electron and hole mobilities in excess of 10(exp 5)cm(exp 2)/V center dot s is now understood on the basis of SL band structure calculations. The in-plane and out-of-plane electron and hole effective masses have been measured and interpreted theoretically for HgTe-CdTe superlattices. Controlled substitutional doping of superlattices has recently been achieved at North Carolina State University (NCSU), and modulation-doped SLs have now been successfully grown and studied. Most recently, a dramatic lowering of the growth temperature of Hg-based quantum well structure and SLs (to approx. 100 C) has been achieved by means of photoassisted molecular beam epitaxy (MBE) at NCSU. A number of new devices have been fabricated from these doped multilayers.

Schetzina, J. F.↗

NASA NTRS1991

Electronic neuroprocessors

The JPL Center for Space Microelectronics Technology (CSMT) is actively pursuing research in the neural network theory, algorithms, and electronics as well as optoelectronic neural net hardware implementations, to explore the strengths and application potential for a variety of NASA, DoD, as well as commercial application problems, where conventional computing techniques are extremely time-consuming, cumbersome, or simply non-existent. An overview of the JPL electronic neural network hardware development activities and some of the striking applications of the JPL electronic neuroprocessors are presented.

Thakoor, Anil↗

NASA NTRS1991

High-gain AlGaAs/GaAs double heterojunction Darlington phototransistors for optical neural networks

High-gain MOCVD-grown (metal-organic chemical vapor deposition) AlGaAs/GaAs/AlGaAs n-p-n double heterojunction bipolar transistors (DHBTs) and Darlington phototransistor pairs are provided for use in optical neural networks and other optoelectronic integrated circuit applications. The reduced base doping level used results in effective blockage of Zn out-diffusion, enabling a current gain of 500, higher than most previously reported values for Zn-diffused-base DHBTs. Darlington phototransitor pairs of this material can achieve a current gain of over 6000, which satisfies the gain requirement for optical neural network designs, which advantageously may employ neurons comprising the Darlington phototransistor pairs in series with a light source.

Kim, Jae H.↗

NASA NTRS1991

Experimental modelling of lightning interaction phenomena with a free potential conducting objects

Laboratory experiments were conducted to investigate the physical processes of the development of air discharge and its interaction with free potential conducting objects. The space-time development of lightning in gaps was recorded by a motion picture camera and an optoelectronic transducer. The electric field at different points in the gap was measured using a Pockels device both in the leader stage and in the stage of the return stroke. Experimental results of the streamer zone length measurements in the gaps with lengths up to 65 meters are presented. The physical processes occurring during the interaction of positive and negative long sparks with isolated objects were investigated. The striking probability of isolated conducting spheres with different diameters and the dependence of the strike on the location of the gap are investigated.

Chernov, E. N.↗

NASA NTRS1989

Growth and characterization of single crystal insulators on silicon

An overview of the growth and characterization of epitaxial insulators on semiconductors is presented. The potential applications include semiconductor-on-insulator structures, three-dimensional and/or high-density integrated circuits, optoelectronic applications such as integrated waveguides and improved gate insulators. The growth and physical characterization of epitaxial fluorides on semiconductors are discussed. Consideration is also given to the epitaxial overgrowth of epitaxial metal layers with CaF2 as well as to the formation of a novel superlattice of Ca particles in epitaxial CaF2.

Schowalter, Leo J.↗

NASA NTRS1990

Fiber optic photoelastic pressure sensor for high temperature gases

A novel fiber optic pressure sensor based on the photoelastic effects has been developed for extremely high temperature gases. At temperatures varying from 25 to 650 C, the sensor experiences no change in the peak pressure of the transfer function and only a 10 percent drop in dynamic range. Refinement of the sensor has resulted in an optoelectronic interface and processor software which can calculate pressure values within 1 percent of full scale at any temperature within the full calibrated temperature range.

Wesson, Laurence N.↗

NASA NTRS1990

Optical interconnections and networks; Proceedings of the Meeting, The Hague, Netherlands, Mar. 14, 15, 1990

The conference presents papers on interconnections, clock distribution, neural networks, and components and materials. Particular attention is given to a comparison of optical and electrical data interconnections at the board and backplane levels, a wafer-level optical interconnection network layout, an analysis and simulation of photonic switch networks, and the integration of picosecond GaAs photoconductive devices with silicon circuits for optical clocking and interconnects. Consideration is also given to the optical implementation of neural networks, invariance in an optoelectronic implementation of neural networks, and the recording of reversible patterns in polymer lightguides.

Bartelt, Hartmut↗

NASA NTRS1992

Pseudomorphic InxGa1-xAs Surface-Emitting Lasers

Solid-state lasers of new type contain pseudomorphic In0.15Ga0.85As single-quantum-well (SQW) active layers sandwiched between thinner layers of GaAs that, in turn, are sandwiched between graded-index-of-refraction separate-confinement-heterostructure (GRINSCH) layers of AlxGa1-xAs. Lasers emit edgewise as other solid-state lasers, or made to emit perpendicularly to their surfaces by use of integrated 45 degree beam deflectors that deflect edge-emitted light. Suitable for incorporation into optoelectronic integrated circuits implementing optical interconnection and parallel processing of data.

Kim, Jae H.↗

NASA NTRS1992

Electrically Isolating Transmission-Line Driver

Proposed optoelectronic coupling circuit used to insert signal in transmission line and to isolate transmission line from ground of circuit in which signal originates. Made from commercially available components, reduces susceptibility to interference along transmission path.

Marchman, Robert H.↗

NASA NTRS1992

Ferroelectric/Optoelectronic Memory/Processor

Proposed hybrid optoelectronic nonvolatile analog memory and data processor comprises planar array of microscopic photosensitive ferroelectric capacitors performing massively parallel analog computations. Processors overcome electronic crosstalk and limitations on number of input/output contacts inherent in electronic implementations of large interconnection arrays. Used in general optical computing, recognition of patterns, and artificial neural networks.

Thakoor, Sarita↗

NASA NTRS1992

Digital Feedback Control Of Servomotor Via Fiber Optics

Optoelectronic system effects closed-loop control of shaft angles of servomotors. Includes full-duplex fiber-optic link carrying feedforward and feedback signals, between digital motor-control circuits and modules containing motor-power-switching circuits. Fiber optics provide immunity to noise and rapid transmission of data. Features particularly advantageous in robots.

Dawson, Reginald↗

NASA NTRS1992

Tracking Retroreflective Targets On A Structure

Optoelectronic system simultaneously measures positions of 50 retroreflective targets with 35 degree field of view, with accuracy of 0.1 mm. SHAPES, "spatial, high-accuracy, position-encoding sensor", illuminates targets with lasers in its sensor module. System repeats measurements 10 times per second and gives unambiguous indication of distance to each target. Applicable in rendezvous and docking systems, boresight determination and precise pointing of antennas.

Nerheim, Noble M.↗

NASA NTRS1992

Polarization-Rotating Sensors Connected To Optical Fibers

Proposed optoelectronic sensor system includes polarization-rotating sensing elements interrogated by polarized light transmitted to and from sensing elements along optical fibers. Polarization of light altered by combinations of inherent birefringence, stress-induced birefrigence, and Faraday rotation. Advantages include: light weight, fast response, immunity to electromagnetic interference at radio and lower frequencies, and no need to supply electrical power to sensing elements.

Frazer, Robert E.↗

NASA NTRS1992

Modified Synthetic-Discriminant-Function Optical Filter

Experiments demonstrated feasibility of synthetic-discriminant-function filter encoded in binary spatial light modulator. Filter is part of optoelectronic apparatus indicating degree of correlation between input image and any number of training images of same object at various positions and orientations. Used in optical correlator to recognize rotated images, or in tracking system to recognize moving vehicle or other substantially rigid object from any direction.

Reid, Max B.↗

NASA NTRS1992

Intensity-Modulated Fiber-Optic Tachometer

Proposed optoelectronic tachometer determines speed of rotation of shaft by measuring fluctuations in intensity of light reflected from notches on shaft. Dual fiber-optic sensor imparts insensitivity to displacements of shaft.

Daniel, James A.↗