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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 649 records · Page 36

Photocapacitance effects at a Cu2S-CdS heterojunction.

The influence of trapped charge on the photovoltaic properties of an efficient Cu2S-CdS single-crystal heterojunction has been studied by a photocapacitance technique. For the nonheat-treated cell, a persistent increment in capacitance as high as 70% of the dark capacitance remained after illumination of the junction by band-gap light at 100 K. The additional capacitance is due to holes trapped in deep levels in the CdS depletion region near the interface. The trapped holes enhanced the 100 K photocurrent spectrum uniformly by a factor of 3 before heat treatment. After a 200 C heat treatment in air, the maximum trapped charge at 100 K enhanced the photocurrent by two orders of magnitude. The results are interpreted in terms of the tunneling through a conduction band spike of electrons photoexcited in the Cu2S.

Lindquist, P. F.↗

Minimizing the area required for time constants in integrated circuits

When a medium- or large-scale integrated circuit is designed, efforts are usually made to avoid the use of resistor-capacitor time constant generators. The capacitor needed for this circuit usually takes up more surface area on the chip than several resistors and transistors. When the use of this network is unavoidable, the designer usually makes an effort to see that the choice of resistor and capacitor combinations is such that a minimum amount of surface area is consumed. The optimum ratio of resistance to capacitance that will result in this minimum area is equal to the ratio of resistance to capacitance which may be obtained from a unit of surface area for the particular process being used. The minimum area required is a function of the square root of the reciprocal of the products of the resistance and capacitance per unit area. This minimum occurs when the area required by the resistor is equal to the area required by the capacitor.

Lyons, J. C.↗

Angle detector

An angle detector for determining a transducer's angular disposition to a capacitive pickup element is described. The transducer comprises a pendulum mounted inductive element moving past the capacitive pickup element. The capacitive pickup element divides the inductive element into two parts L sub 1 and L sub 2 which form the arms of one side of an a-c bridge. Two networks R sub 1 and R sub 2 having a plurality of binary weighted resistors and an equal number of digitally controlled switches for removing resistors from the networks form the arms of the other side of the a-c bridge. A binary counter, controlled by a phase detector, balances the bridge by adjusting the resistance of R sub 1 and R sub 2. The binary output of the counter is representative of the angle.

Parra, G. T.↗

Frequency response of charge transfer in MOS inversion layers

The dynamics of charge transfer from a reservoir into an MOS inversion layer, which limits the frequency response of an MOS transistor or a charge-coupled device, is investigated. Using Berman and Kerr's model of space-charge capacitance in the semiconductor, a small-signal distributed model is developed for an MOS structure which transfers charge in an inversion channel due to a variation in the gate voltage. The dynamics of the charge transfer is characterized by a time constant which is determined by the length of the inversion channel and its mobility. Experimental data of gate capacitance vs frequency, taken from a test structure with a diffused source/drain well, are satisfactorily fitted by theoretical curves derived from the model. The channel mobility is precisely determined from the adjusted time constant. The influence of interface states on the capacitance-frequency relationship is also briefly discussed.

Lieneweg, U.↗

Characteristics of arc currents on a negatively biased solar cell array in a plasma

The time dependence of the emitted currents during arcing on solar cell arrays is being studied. The arcs are characterized using three parameters: the voltage change of the array during the arc (i.e., the charge lost), the peak current during the arc, and the time constant describing the arc current. This paper reports the dependence of these characteristics on two array parameters, the interconnect bias voltage and the array capacitance to ground. It was found that the voltage change of the array during an arc is nearly equal to the bias voltage. The array capacitance, on the other hand, influences both the peak current and the decay time constant of the arc. Both of these characteristics increase with increasing capacitance.

Snyder, D. B.↗

Eddy current jet engine disk-crack monitor

A disk-crack monitor is described that is suitable for use on the ground or in flight. The system consists of an engine-mounted eddy current sensor, a series capacitance in each leg of the sensor circuit, and a capacitance-conductance bridge followed by an oscilloscope capable of advanced signal processing. It was applied to the detection of service-induced cracks in the first-stage turbine wheel of a helicopter engine. A 3.5 mm long radial fatigue crack plus smaller cracks, all located in the blade root region of the wheel, were detected during engine test stand operation at ground idle speed and temperature. The calculation of the value of series capacitance is also presented.

Barranger, J. P.↗

Characteristics of arc currents on a negatively biased solar cell array in a plasma

The time dependence of the emitted currents during arcing on solar cell arrays is being studied. The arcs are characterized using three parameters: the voltage change of the array during the arc (i.e., the charge lost), the peak current during the arc, and the time constant describing the arc current. This paper reports the dependence of these characteristics on two array parameters, the interconnect bias voltage and the array capacitance to ground. It was found that the voltage change of the array during an arc is nearly equal to the bias voltage. The array capacitance, on the other hand, influences both the peak current and the decay time constant of the arc. Both of these characteristics increase with increasing capacitance.

Snyder, D. B.↗

Approximations useful for the prediction of electrostatic discharges for simple electrode geometries

The report provides approximations for estimating the capacitance and the ratio of electric field strength to potential for a certain class of electrode geometries. The geometry consists of an electrode near a grounded plane, with the electrode being a surface of revolution about the perpendicular to the plane. Some examples which show the accuracy of the capacitance estimate and the accuracy of the estimate of electric field over potential can be found in the appendix. When it is possible to estimate the potential of the electrode, knowing the ratio of electric field to potential will help to determine if an electrostatic discharge is likely to occur. Knowing the capacitance will help to determine the strength of the discharge (the energy released by it) if it does occur. A brief discussion of discharge mechanisms is given. The medium between the electrode and the grounded plane may be a neutral gas, a vacuum, or an unchanged homogeneous isotropic dielectric.

Edmonds, L.↗

Oscillator or Amplifier With Wide Frequency Range

Inductive and capacitive effects synthesized with feedback circuits. Oscillator/amplifier resistively tunable over wide frequency range. Feedback circuits containing operational amplifiers, resistors, and capacitors synthesize electrical effects of inductance and capacitance in parallel between input terminals. Synthetic inductance and capacitance, and, therefore, resonant frequency of input admittance, adjusted by changing potentiometer setting.

Kleinberg, L.↗

Oil film thickness measurement and analysis for an angular contact ball bearing operating in parched elastohydrodynamic lubrication

The capacitance method is used to estimate the oil film thickness in the Hertzian contact zone of an angular contact ball bearing operating in parched elastohydrodynamic lubrication. The parched elastohydrodynamic lubrication regime is characterized by a transient film thickness and basic speed ratio (ball spin rate over combined race speed) and the formation of a friction polymer. The experimental apparatus tests 40 mm 108 H ball bearings in the counter rotating race mode at loads of 200 and 300 lb, a film parameter of 1.6 and nominal inner and outer race speeds of 38 and 26 rps, respectively. Experimental results are presented for the capacitance, thickness, and conductance of the oil film as functions of elapsed time and for the basic speed ratios as a function of elapsed time, load, and amount of lubricant applied to the test bearing. Results indicate that a friction polymer formed from the initial lubricant has an effect on the capacitance and basic speed ratio measurements.

Hunter, Scott D.↗

Behavior of inversion layers in 3C silicon carbide

A study on the field-induced surface-charge region in 3C silicon carbide (SiC) using 1 MHz capacitance-voltage (C-V) measurements at room temperature is here reported. A double column mercury probe was used on oxidized SiC substrates to form metal-oxide-semiconductor (MOS) structures. These structures were characterized in terms of the substrate doping profile, effective fixed oxide charge, and interface trap density. A distinctive feature of the MOS C-V curves from accumulation to inversion is that after going into deep depletion the capacitance rises to its equilibrium inversion level during the voltage sweep. Capacitance transient measurements indicate that the minority-carrier generation occurs at the SiO2/SiC interface.

Avila, R. E.↗

Determination of lifetime and surface recombination velocity of p-n junction solar cells and diodes by observing transients

The unified view of transient methods for the determination of recombination lifetime tau and back surface recombination velocity S presented here for silicon solar cells and diodes attempts to define limitations of existing methods and to evolve improvements. The presence of sizable junction capacitance for silicon devices under forward voltage invalidates the use of conventional open-circuit voltage decay (OCVD) and reverse recovery. This led Green (1983) to his method of compensated open-circuit voltage decay, in which the addition of an external resistor shunting the solar cell partially corrects for the presence of the junction capacitance. Setting this resistance to zero produces an electrical short-circuit current-decay method, which has the advantage of enabling determination of both tau and S. In an alternate approach, one may insert the functional dependence of the junction capacitance on forward voltage. This new method, denoted by the acronym OCVDCAP, enables the determination of tau with apparently greater accuracy than that obtained by previous methods utilizing voltage transients. But OCVDCAP has in common with the previous methods that it determines tau only and has practical utility only for determining tau of long-base devices. This means that it is useful only for thick base regions. In principle, however, it has an advantage over short-circuit current decay: it requires only pressure contacts, not ohmic contacts, and therefore may be used to determine tau after key processing steps in manufacturing.

Lindholm, Fredrik A.↗

Electrostatic charge on a dust size distribution in a plasma

The capacitance of a grain immersed in a steady state plasma containing a size distribution of dust particles is studied. The grain charge is determined by assuming the equilibrium potential has been obtained by a simple balance of electron and ion collection currents. It is shown that the validity of the analytical treatment given here for the linearized Poisson equation is confined to a certain region of space. Within this region and starting at very small plasma Debye length lambda(D), the capacitance at first exhibits a monotonic increase with increasing lambda(D). The capacitance eventually reaches a maximum, followed by a monotonic decrease. The charge density of the dust in the plasma is found to be only a function of the lambda(D); there is no significant dependence on the interparticle spacing.

Houpis, Harry L. F.↗

Approximations useful for the prediction of electrostatic discharges for simple electrode geometries

The report provides approximations for estimating the capacitance and the ratio of electric field strength to potential for a certain class of electrode geometries. The geometry consists of an electrode near a grounded plane, with the electrode being a surface of revolution about the perpendicular to the plane. Some examples which show the accuracy of the capacitance estimate and the accuracy of the estimate of electric field over potential can be found in the appendix. When it is possible to estimate the potential of the electrode, knowing the ratio of electric field to potential will help to determine if an electrostatic discharge is likely to occur. Knowing the capacitance will help to determine the strength of the discharge (the energy released by it) if it does occur. A brief discussion of discharge mechanisms is given. The medium between the electrode and the grounded plane may be a neutral gas, a vacuum, or an unchanged homogeneous isotropic dielectric.

Edmonds, Larry D.↗

Stripline feed for a microstrip array of patch elements with teardrop shaped probes

A circularly polarized microstrip array antenna utilizing a honeycomb substrate made of dielectric material to support on one side the microstrip patch elements in an array, and on the other side a stripline circuit for feeding the patch elements in subarray groups of four with angular orientation and phase for producing circularly polarized radiation, preferably at a 0, 90, 180, and 270 degree relationship is described. The probe used for coupling each feed point in the stripline circuit to a microstrip patch element is teardrop shaped in order to introduce capacitance between the coupling probe and the metal sheet of the stripline circuit that serves as an antenna ground plane. The capacitance thus introduced tunes out inductance of the probe. The shape of the teardrop probe is not critical. The probe capacitance required is controlled by the maximum diameter for the teardrop shaped probe, which can be empirically determined for the operating frequency. An aluminum baffle around each subarray blocks out surface wave between subarrays.

Huang, John↗

Common source cascode amplifiers for integrating IR-FPA applications

Space based astronomical infrared measurements present stringent performance requirements on the infrared detector arrays and their associated readout circuitry. To evaluate the usefulness of commercial CMOS technology for astronomical readout applications a theoretical and experimental evaluation was performed on source follower and common-source cascode integrating amplifiers. Theoretical analysis indicates that for conditions where the input amplifier integration capacitance is limited by the detectors capacitance the input referred rms noise electrons of each amplifier should be equivalent. For conditions of input gate limited capacitance the source follower should provide lower noise. Measurements of test circuits containing both source follower and common source cascode circuits showed substantially lower input referred noise for the common-source cascode input circuits. Noise measurements yielded 4.8 input referred rms noise electrons for an 8.5 minute integration. The signal and noise gain of the common-source cascode amplifier appears to offer substantial advantages in acheiving predicted noise levels.

Woolaway, James T.↗

A magneto-sensitive skin for robots in space

The development of a robot arm proximity sensing skin that can sense intruding objects is described. The purpose of the sensor would be to prevent the robot from colliding with objects in space including human beings. Eventually a tri-mode system in envisioned including proximity, tactile, and thermal. To date the primary emphasis was on the proximity sensor which evolved from one based on magneto-inductive principles to the current design which is based on a capacitive-reflector system. The capacitive sensing element, backed by a reflector driven at the same voltage and in phase with the sensor, is used to reflect field lines away from the grounded robot toward the intruding object. This results in an increased sensing range of up to 12 in. with the reflector on compared with only 1 in. with it off. It is believed that this design advances the state-of-the-art in capacitive sensor performance.

Chauhan, D. S.↗

Some recent studies with the solid-ionomer electrochemical capacitor

Giner, Inc. has developed a high-energy-density, all-solid-ionomer electrochemical capacitor, completely free of liquid electrolyte. The novel features of this device include 1) a three-dimensional metal oxide-particulate-ionomer composite electrode structure, and 2) a unitized repeating cell element. The composite electrode structures are bonded to opposite sides of a thin sheet of a solid proton-conducting ionomer membrane and form an integrally bonded membrane and electrode assembly (MEA). Individual MEAs can be stacked in series as bipolar elements to form a multiple cell device. The discharge characteristics and energy storage properties of these devices are described. Typical capacitance measured for a unit cell is 1 F/cm(exp 2). Life testing of a multicell capacitor on an intermittent basis has shown, that over a 10,000 hour period, the capacitance and resistance of the cell has remained invariant. There has been no maintenance required on the device since it was fabricated. Other multicell units of shorter life duration have exhibited similar reliable performance characteristics. Recent work has focused on increasing the capacitance of the unitized structure and improving the low-temperature characteristics. The approaches and experimental results will be presented. Some possible advanced NASA applications for these unique all-solid-ionomer devices will be discussed.

S Sarangapani↗