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All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Relative phase stability of L1 2 and DO 22 /DO 23 structures in Al 3 Nb, Al 3 Zr and Al 3 V compounds

The relative stability of the different tri-aluminide (Al 3 M) phases in three binary systems (M = Zr, Nb and V) was assessed for their potential to form fine cubic L1 2 precipitates in additively manufactured alloys. Supersaturated thin films of Al-(8–30) at% M were sputtered and heat treated during in-situ x-ray diffraction (XRD) measurements to observe the temperature ranges of stability for each phase. As-sputtered films were then processed with laser tracks simulating additive manufacturing solidification conditions, and the formation of phases in the laser tracks was correlated with density functional theory (DFT) and nucleation rate calculations. We found that the metastable L1 2 structure is highly competitive with the stable DO 23 structure in the Al-Zr system, but much less stable than the DO 22 structure in the Al-Nb system, and both the DO 22 and Al 8 V 5 structure in the Al-V system. Furthermore, these experimental results were found to be in good agreement with the DFT and kinetic calculations, as we determined that the metastable L1 2 in Al-Zr only requires a small amount of undercooling to favor its nucleation over the stable DO 23 , suggesting additive manufacturing can be a viable pathway to develop Al-Zr alloys strengthened by a high volume fraction of L1 2 Al 3 Zr phase.

Perrin, Alice E. [Oak Ridge National Laboratory (O↗
DOE OSTI2023

Photoluminescence of CdTe and CdZnTe compounds doped with 2% selenium

The addition of 2 % of selenium in CdTe and CdZnTe (CZT) exhibited an additional acceptor-bound exciton in photoluminescence (PL). From the PL and inductively coupled plasma mass spectrometer (ICP/MS) analyses, the additional acceptor-bound exciton emission is associated with a Cu impurity in the relatively low-purity (5N) precursor CdSe starting material. Additionally, thermal quenching of the acceptor/donor bound exciton emissions do not require a shift to any higher excited states or to the free exciton state. ICP/MS analysis also showed a higher concentration of Sn in CdZnTeSe (CZTS) compared to CdTe and CZT which is known to form a deep level trap at around E C – 0.83 eV. The trapping and de-trapping times indicate that the Sn-related deep trap acts as an electron trapping center. The relatively low electron mobility-lifetime product of CZTS might be correlated with the concentration of Sn in the impure CdSe material. Pulse height spectra using an Eu-152 gamma-ray source was taken for a 2-mm-thick planar CZTS detector. The spectra clearly showed all the expected gamma peaks with energy lower than 344.3 keV.

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