Search NASA⌕ Search

SEARCH · Search NASA

Results for “device stability”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 649 records · Page 36

Molecular interactions that drive morphological and mechanical stabilities in organic solar cells

Morphological and mechanical stabilities of organic solar cells (OSCs) are of paramount importance to ensure long-lived devices. However, the fundamental drivers of these stability metrics and their competing relationship have yet to be well defined. Here, in this work, several high-performance polymers and small molecule acceptors (SMAs) are considered to assist in the development of a comprehensive view of the molecular drivers of, and interrelationships between, morphological and mechanical stabilities. We find that the SMAs drive much of the embrittlement and diffusion characteristics in the blend films. However, the heterointeraction of the SMA and polymer, probed through dynamic mechanical analysis, is a key contributing factor to the film toughness. The heterointeraction energy is ideally maximally negative (i.e., repulsive), deviating from the geometric mean of the homointeraction energy. These findings assist in introducing a framework to understand the active layer stability and highlight material properties that lead to morphologically stable and physically robust OSCs.

14 SOLAR ENERGY↗

Real-space observation of fluctuating antiferromagnetic domains

Magnetic domains play a fundamental role in physics of magnetism and its technological applications. Dynamics of antiferromagnetic domains is poorly understood, although antiferromagnets are expected to be extensively used in future electronic devices wherein it determines the stability and operational speed. Dynamics of antiferromagnets also features prominently in the studies of topological quantum matter. Real-space imaging of fluctuating antiferromagnetic domains is therefore highly desired but has never been demonstrated. We use coherent x-ray diffraction to obtain videos of fluctuating micrometer-scale antiferromagnetic domains in Ni 2 MnTeO 6 on time scales from 10 -1 to 10 3 s. In the collinear phase, thermally activated domain wall motion is observed in the vicinity of the Néel temperature. Unexpectedly, the fluctuations persist through the full range of the higher-temperature helical phase. These observations illustrate the high potential significance of the dynamic domain imaging in phase transition studies and in magnetic device research.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Elimination of the bias-stress effect in ligand-free quantum dot field-effect transistors

Field-effect transistors (FETs) made from colloidal quantum dot (QD) solids commonly suffer from current–voltage hysteresis caused by the bias-stress effect (BSE), which complicates fundamental studies of charge transport in QD solids and the use of QD FETs in electronics. Here, we show that the BSE can be eliminated in n-channel PbSe QD FETs by first removing the QD ligands with a dose of H 2 S gas and then infilling the QD films with alumina by atomic layer deposition (ALD). The H 2 S-treated, alumina-infilled FETs have stable, hysteresis-free device characteristics (total short-term stability), indefinite air stability (total long-term stability), and a high electron mobility of up to 14 cm 2 V −1 s −1 , making them attractive for QD circuitry and optoelectronic devices. The BSE-free devices are utilized to conclusively establish the dependence of the electron mobility on temperature and QD diameter. We demonstrate that the BSE in these devices is caused by both electron trapping at the QD surface and proton drift within the film. The H 2 S/alumina chemistry produces ligand-free PbSe/PbS/Al 2 O 3 interfaces that lack the traps that cause the electronic part of the BSE, while full alumina infilling stops the proton motion responsible for the ionic part of the BSE. In conclusion, our matrix engineering approach should aid efforts to eliminate the BSE, boost carrier mobilities, and improve charge transport in other types of nanocrystal solids.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Unveiling the Degradation Mechanism of High-Temperature Superconductor Bi 2 Sr 2 CaCu 2 O 8+δ in Water-Bearing Environments

We report the physical properties of copper oxide high-temperature superconductors have been studied extensively, such as its band structure, and doping effects of Bi 2 Sr 2 CaCu 2 O 8+δ (Bi-2212). However, some chemical-related properties of these superconductors are rarely reported, such as their stability in air. Here, we report experiments combined with ab initio calculations that address the effects of water in contact with Bi-2212. The evolution of Bi-2212 flake with exposure to water for different time intervals were tested and characterized by optical microscopy (OM), atomic force microscopy (AFM), Raman spectroscopy, transmission electron microscopy (TEM) and electrical measurements. The thickness of Bi-2212 flakes is gradually decreased in water, and some thin flakes can be completely etched away after a few days. The stability of Bi-2212 in other solvents is also evaluated, including alcohol, acetone, HCl and KOH. The morphology of Bi-2212 flakes is relatively stable in organic solvents. However, the flakes are etched relatively quick in HCl and KOH, especially in acidic environment. Our results imply that hydrogen ion is primarily responsible for the deterioration of their properties. Both TEM and calculation results demonstrate that the atoms in Bi-O plane is relatively stable when compared to the inner atoms in Sr-O, Ca-O and Cu-O planes. This work contributes towards understanding the chemical stability of Bi-2212 superconducting device in environmental medium, which is important for both fundamental studies and practical applications of copper oxide high-temperature superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Grid regulation services for energy storage devices based on grid frequency

Disclosed herein are representative embodiments of methods, apparatus, and systems for charging and discharging an energy storage device connected to an electrical power distribution system. In one exemplary embodiment, a controller monitors electrical characteristics of an electrical power distribution system and provides an output to a bi-directional charger causing the charger to charge or discharge an energy storage device (e.g., a battery in a plug-in hybrid electric vehicle (PHEV)). The controller can help stabilize the electrical power distribution system by increasing the charging rate when there is excess power in the electrical power distribution system (e.g., when the frequency of an AC power grid exceeds an average value), or by discharging power from the energy storage device to stabilize the grid when there is a shortage of power in the electrical power distribution system (e.g., when the frequency of an AC power grid is below an average value).

25 ENERGY STORAGE↗

Grid regulation services for energy storage devices based on grid frequency

Disclosed herein are representative embodiments of methods, apparatus, and systems for charging and discharging an energy storage device connected to an electrical power distribution system. In one exemplary embodiment, a controller monitors electrical characteristics of an electrical power distribution system and provides an output to a bi-directional charger causing the charger to charge or discharge an energy storage device (e.g., a battery in a plug-in hybrid electric vehicle (PHEV)). The controller can help stabilize the electrical power distribution system by increasing the charging rate when there is excess power in the electrical power distribution system (e.g., when the frequency of an AC power grid exceeds an average value), or by discharging power from the energy storage device to stabilize the grid when there is a shortage of power in the electrical power distribution system (e.g., when the frequency of an AC power grid is below an average value).

25 ENERGY STORAGE↗

Grid regulation services for energy storage devices based on grid frequency

Disclosed herein are representative embodiments of methods, apparatus, and systems for charging and discharging an energy storage device connected to an electrical power distribution system. In one exemplary embodiment, a controller monitors electrical characteristics of an electrical power distribution system and provides an output to a bi-directional charger causing the charger to charge or discharge an energy storage device (e.g., a battery in a plug-in hybrid electric vehicle (PHEV)). The controller can help stabilize the electrical power distribution system by increasing the charging rate when there is excess power in the electrical power distribution system (e.g., when the frequency of an AC power grid exceeds an average value), or by discharging power from the energy storage device to stabilize the grid when there is a shortage of power in the electrical power distribution system (e.g., when the frequency of an AC power grid is below an average value).

24 POWER TRANSMISSION AND DISTRIBUTION↗

Grid regulation services for energy storage devices based on grid frequency

Disclosed herein are representative embodiments of methods, apparatus, and systems for charging and discharging an energy storage device connected to an electrical power distribution system. In one exemplary embodiment, a controller monitors electrical characteristics of an electrical power distribution system and provides an output to a bi-directional charger causing the charger to charge or discharge an energy storage device (e.g., a battery in a plug-in hybrid electric vehicle (PHEV)). The controller can help stabilize the electrical power distribution system by increasing the charging rate when there is excess power in the electrical power distribution system (e.g., when the frequency of an AC power grid exceeds an average value), or by discharging power from the energy storage device to stabilize the grid when there is a shortage of power in the electrical power distribution system (e.g., when the frequency of an AC power grid is below an average value).

24 POWER TRANSMISSION AND DISTRIBUTION↗

Solution-Processable Transparent Conductive Hole Injection Electrode for OLED SSL

An interconnected network of silver nanowires has been used as transparent anode in OLED devices. This layer was deposited by spin-coating and slot-die coating from an aqueous nanowire suspension. The sheet resistance of the film was 10ohms/sq with a transmission (including the glass substrate) of higher than 85%. The first phase of the project focused on the implementation of this nanowire layer with a hole-injection-layer (HIL) which has been developed at Plextronics and has been shown to provide good stability and efficiency in conventional OLED devices. We modified the HIL solution such that it coated reasonably well with suitable surface morphology so that actual devices can be manufactured. During the second phase we investigated the hole-injection and stability of hole-onlydevices. We determined that the use of the nanowire network as anode does not introduce an additional degradation mechanism since the observed device characteristics did not differ from those made with ITO anode. We then proceeded to make actual OLED devices with this nanowire / HIL stack and achieved device characteristics similar state-of-the-art OLED devices with a single junction. In order to gain traction with potential OLED manufacturers, we decided to contract Novaled to prepare large-area demonstrators for us. For these devices, we used an allevaporated stack, i.e. we did use Novaled's HIL material instead of Plextronics. We successfully fabricated demonstrators with an area of 25cm2 with a double or triple junction stack. Minor stack optimizations were necessary to achieve efficacies and lifetime equivalent with ITO devices made with the same devices stack. Due to the reduced microcavity effect, the color of the emitted light is significantly more stable with respect to the viewing angle compared to ITO devices. This fact in conjunction with the promise of lower production cost due to the elimination of the ITO sputtering process and the direct patterning of the anode layer are the obvious advantages of this technology. The project has shown that this nanowire technology is a viable option to achieve OLED devices with good lifetime and efficiency and we are currently working with manufacturers to utilize this technology in a production setting.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Dynamic Interaction of Grid-Forming and Grid-Following Inverters with Synchronous Generators in Hybrid Power Plants

As the integration of renewable energy resources such as wind and solar generation continues to grow, the use of hybrid power plants with both synchronous machines and power electronic inverters operating in parallel becomes more common. This paper studies the impact on small-signal stability for these pairs of devices, first as an isolated two-device system and then as part of a 9-bus test system. Each operational scenario was studied with both a grid-following inverter and a grid-forming inverter. In each scenario, the state variables associated with the synchronous generator's excitation system were found to be responsible for the inception of instability. These results underscore the importance of accurate modeling of excitation systems when modeling power systems with hybrid power plants.

hybrid power plant↗

Photochemical deterioration of the organic/metal contacts in organic optoelectronic devices

We study the effect of exposure to light on a wide range of organic/metal contacts that are commonly used in organic optoelectronic devices and found that irradiation by light in the visible and UV range results in a gradual deterioration in their electrical properties. This photo-induced contact degradation reduces both charge injection (i.e., from the metal to the organic layer) and charge extraction (i.e., from the organic layer to the metal). X-ray photoelectron spectroscopy (XPS) measurements reveal detectable changes in the interface characteristics after irradiation, indicating that the photo-degradation is chemical in nature. Changes in XPS characteristics after irradiation suggests a possible reduction in bonds associated with organic-metal complexes. Measurements of interfacial adhesion strength using the four-point flexure technique reveal a decrease in organic/metal adhesion in irradiated samples, consistent with a decrease in metal-organic bond density. The results shed the light on a new material degradation mechanism that appears to have a wide presence in organic/metal interfaces in general, and which likely plays a key role in limiting the stability of various organic optoelectronic devices such as organic light emitting devices, organic solar cells, and organic photo-detectors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Protection of inorganic semiconductors for sustained, efficient photoelectrochemical water oxidation

Small-band-gap (E g < 2 eV) semiconductors must be stabilized for use in integrated devices that convert solar energy into the bonding energy of a reduced fuel, specifically H 2 (g) or a reduced-carbon species such as CH 3 OH or CH 4 . To sustainably and scalably complete the fuel cycle, electrons must be liberated through the oxidation of water to O 2 (g). Strongly acidic or strongly alkaline electrolytes are needed to enable efficient and intrinsically safe operation of a full solar-driven water-splitting system. But, under water-oxidation conditions, the small-band-gap semiconductors required for efficient cell operation are unstable, either dissolving or forming insulating surface oxides. Here, we describe herein recent progress in the protection of semiconductor photoanodes under such operational conditions. We specifically describe the properties of two protective overlayers, TiO 2 /Ni and NiO x , both of which have demonstrated the ability to protect otherwise unstable semiconductors for > 100 h of continuous solar-driven water oxidation when in contact with a highly alkaline aqueous electrolyte (1.0 M KOH(aq)). Furthermore, the stabilization of various semiconductor photoanodes is reviewed in the context of the electronic characteristics and a mechanistic analysis of the TiO 2 films, along with a discussion of the optical, catalytic, and electronic nature of NiO x films for stabilization of semiconductor photoanodes for water oxidation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD

Abstract This letter reports the demonstration of Aluminum nitride (AIN) Schottky barrier diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics with ON/OFF ratios of 10 6 –10 8 and excellent thermal stability from 298 to 623 K. The device Schottky barrier height increased from 0.89 to 1.85 eV, and the ideality factor decreased from 4.29 to 1.95 with increasing temperature, ascribed to the inhomogeneous metal/AlN interface. This work demonstrates the potential of AlN as an ultra-wide bandgap semiconductor for developing multi-kV AlN high-voltage and high-power devices.

Physics↗

Laminar to Turbulence Transition in Boundary Layers due to Tripping Devices

Direct numerical simulations (DNS)and linear stability analysis were performed to identify the mechanisms by which two-and three-dimensional trips promote early transition in subsonic boundary layers over a flat plate. Investigations were conducted for two boundary layer transition trip configurations: one is a two-dimensional rectangular-shaped rod and the other is a three-dimensional zigzag tape. Reynolds numbers based on the trip heights are 683 and 300 for the two-and three-dimensional trips, respectively. Simulations with the two-dimensional trip showed that the flow separates at the top of the trip and forms a long recirculation zone downstream. However, the flow remains steady in the simulation without any external disturbances. Linear stability analysis showed that the inflectional profile in the recirculation zone is strongly unstable to frequencies in the range of 100-300 Hz. Simulations with the external disturbances forced at the frequency of 200 Hz showed that disturbances grow strongly inside the recirculation zone as observed in the Klebanoff1 experiment.

Transition↗

Laminar to Turbulence Transition in Boundary Layers due to Tripping Devices

Direct numerical simulations (DNS)and linear stability analyses were performed to identify the mechanisms by whichtwo-and three-dimensional trips promote early transition in subsonic boundary layers over a flat plate. Investigations were conducted for threeboundary-layer transition trip configurations:a two-dimensional smooth hump,a two-dimensional rectangular-shapedrod and a three-dimensional zig-zagtape. The smooth hump was used by Park et al.1in the linear and nonlinear parabolized stability (PSE) computations. Reynolds numbersbased on the tripheights are 710, 683,and 300 for the two-and three-dimensional trips, respectively. Simulations withthe smooth hump showed that the flow becomes stable upstream and strongly unstable downstream of the hump. Simulations with the two-dimensional rectangular trip showed that the flow separates at the top of the trip and forms a long recirculation zonedownstream. However, the flow remains steady in the simulation without any external disturbances. Linear stability analysis showed that the inflectional profile in the recirculation zone is strongly unstable to frequencies in the range of 100-300 Hz. Simulations with the external disturbances forced at the frequency of 200 Hz showed that disturbances grow strongly inside the recirculation zone as observed in the Klebanoff2 experiment. Three-dimensional simulations with secondary disturbances of fundamental, subharmonic, and oblique types produced turbulent flows shortlydownstream. The three-dimensional zig-zag trip with a small roughness Reynolds number lead to early breakdown to a turbulent flow.

Stability↗

Non-aqueous electrolyte for lithium-ion battery

The present technology relates to stabilizing additives and electrolytes containing the same for use in electrochemical devices such as lithium ion batteries and capacitors. The stabilizing additives include triazinane triones and bicyclic compounds comprising succinic anhydride, such as compounds of Formulas I and II described herein.

25 ENERGY STORAGE↗

Environmental stability of high-mobility indium-oxide based transparent electrodes

Large-scale deployment of a wide range of optoelectronic devices, including solar cells, critically depends on the long-term stability of their front electrodes. Here, we investigate the performance of Sn-doped In{sub 2}O{sub 3} (ITO), H-doped In{sub 2}O{sub 3} (IO:H), and Zn-doped In{sub 2}O{sub 3} (IZO) electrodes under damp heat (DH) conditions (85 °C, 85% relative humidity). ITO, IO:H capped with ITO, and IZO show high stability with only 3%, 9%, and 13% sheet resistance (R{sub s}) degradation after 1000 h of DH, respectively. For uncapped IO:H, we find a 75% R{sub s} degradation, due to losses in electron Hall mobility (μ{sub Hall}). We propose that this degradation results from chemisorbed OH- or H{sub 2}O-related species in the film, which is confirmed by thermal desorption spectroscopy and x-ray photoelectron spectroscopy. While μ{sub Hall} strongly degrades during DH, the optical mobility (μ{sub optical}) remains unchanged, indicating that the degradation mainly occurs at grain boundaries.

36 MATERIALS SCIENCE↗

Intrinsic rotation in axisymmetric devices

Toroidal rotation is critical for fusion in tokamaks, since it stabilizes instabilities that can otherwise cause disruptions or degrade confinement. Unlike present-day devices, ITER might not have enough neutral-beam torque to easily avoid these instabilities. We must therefore understand how the plasma rotates 'intrinsically,' that is, without applied torque. Experimentally, torque-free plasmas indeed rotate, with profiles that are often non-flat and even non-monotonic. The rotation depends on many plasma parameters including collisionality and plasma current, and exhibits sudden bifurcations ('rotation reversals') at critical parameter values. Since toroidal angular momentum is conserved in axisymmetric systems, and since experimentally inferred momentum transport is much too large to be neoclassical, theoretical work has focused on rotation drive by nondiffusive turbulent momentum fluxes. In the edge, intrinsic rotation relaxes to a steady state in which the total momentum outflux from the plasma vanishes. Ion drift orbits, scrape-off-layer flows, separatrix geometry, and turbulence intensity gradient all play a role. In the core, nondiffusive and viscous momentum fluxes balance to set the rotation gradient at each flux surface. Although many mechanisms have been proposed for the nondiffusive fluxes, most are treated in one of two distinct but related gyrokinetic formulations. In a radially local fluxtube, appropriate for ${\rho }_{\ast }\ll 1$, the lowest-order gyrokinetic formulations exhibit a symmetry that prohibits nondiffusive momentum flux for nonrotating plasmas in an up-down symmetric magnetic geometry with no ${\boldsymbol{E}}\times {\boldsymbol{B}}$ shear. Many symmetry-breaking mechanisms have been identified, but none have yet been conclusively demonstrated to drive a strong enough flux to explain commonly observed experimental rotation profiles. Radially global gyrokinetic simulations naturally include many symmetry-breaking mechanisms, and have shown cases with experimentally relevant levels of nondiffusive flux. These promising early results motivate further work to analyze, verify, and validate. This article provides a pedagogical introduction to intrinsic rotation in axisymmetric devices. Finally, intended for both newcomers to the topic and experienced practitioners, the article reviews a broad range of topics including experimental and theoretical results for both edge and core rotation, while maintaining a focus on the underlying concepts.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗