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At least 649 records · Page 36

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NASA NTRS1987

IRAC test report. Gallium doped silicon band 2: Read noise and dark current

A direct readout infrared detector array, a candidate for the Space Infrared Telescope Facility (SIRTF) Infrared Array Camera (IRAC), has been tested. The array has a detector surface of gallium doped silicon, bump bonded to a 58x62 pixel MOSFET multiplexer on a separate chip. Although this chip and system do not meet all the SIRTF requirements, the critically important read noise is within a factor of 3 of the requirement. Significant accomplishments of this study include: (1) development of a low noise correlated double sampling readout system with a readout noise of 127 to 164 electrons (based on the detector integrator capacitance of 0.1 pF); (2) measurement of the readout noise of the detector itself, ranging from 123 to 214 electrons with bias only (best to worst pixel), and 256 to 424 electrons with full clocking in normal operation at 5.4 K where dark current is small. Thirty percent smaller read noises are obtained at a temperature of 15K; (3) measurement of the detector response versus integration time, showing significant nonlinear behavior for large signals, well below the saturation level; and (4) development of a custom computer interface and suitable software for collection, analysis and display of data.

Lamb, Gerald↗

NASA NTRS1988

Observation of enhanced properties in samples of silver oxide doped YBa2Cu3O(x)

Samples of YBa2Cu3O(x) doped with silver oxide (Tc is about 93 K) have exhibited attractive forces in gradient magnetic fields, both normal and tangential to the surfaces, which are more than twice the sample weight. This allows sample suspension below a rare earth magnet. Critical current density was increased by about 100 at 77 K. Persistent fields, flux pinning, magnetization, and modeling are described.

Peters, P. N.↗

NASA NTRS1989

Compensation for effects of ambient temperature on rare-earth doped fiber optic thermometer

Variations in ambient temperature have a negative effect on the performance of any fiber optic sensing system. A change in ambient temperature may alter the design parameters of fiber optic cables, connectors, sources, detectors, and other fiber optic components and eventually the performance of the entire system. The thermal stability of components is especially important in a system which employs intensity modulated sensors. Several referencing schemes have been developed to account for the variable losses that occur within the system. However, none of these conventional compensating techniques can be used to stabilize the thermal drift of the light source in a system based on the spectral properties of the sensor material. The compensation for changes in ambient temperature becomes especially important in fiber optic thermometers doped with rare earths. Different approaches to solving this problem are searched and analyzed.

Adamovsky, G.↗

NASA NTRS1988

The effect of sulfur and zirconium co-doping on the oxidation of NiCrAl

The adhesion behavior of Al2O3 scales formed on NiCrAl+Zr alloys was examined as a function of both sulfur and zirconium doping levels. In general, very high levels of zirconium were required to counteract the detrimental effects of sulfur. A sulfur-zirconium adherence map was constructed, as determined from the oxidation and spalling behavior in 1100 C cyclic tests. For low sulfur alloys (less than 500 ppma), the amount of zirconium required for adherence at any given sulfur level can be described by Zr greater than 600 S(0.2) (in ppma). These results underscore the importance of sulfur to adhesion mechanisms and suggest that sulfur gettering is a first order effect of reactive element additions to MCrAl alloys.

Smialek, James L.↗

NASA NTRS1988

An experimental analysis of a doped lithium fluoride direct absorption solar receiver

An experimental analysis of two key elements of a direct absorption solar receiver for use with Brayton solar dynamic systems was conducted. Experimental data are presented on LiF crystals doped with dysprosium, samarium, and cobalt fluorides. In addition, a simulation of the cavity/window environment was performed and a posttest inspection was conducted to evaluate chemical reactivity, transmissivity, and condensation rate.

Kesseli, James↗

NASA NTRS1988

Infrared absorption study of neutron-transmutation-doped germanium

Using high-resolution far-infrared Fourier transform absorption spectroscopy and Hall effect measurements, the evolution of the shallow acceptor and donor impurity levels in germanium during and after the neutron transmutation doping process was studied. The results show unambiguously that the gallium acceptor level concentration equals the concentration of transmutated Ge-70 atoms during the whole process indicating that neither recoil during transmutation nor gallium-defect complex formation play significant roles. The arsenic donor levels appear at full concentration only after annealing for 1 h at 450 C. It is shown that this is due to donor-radiation-defect complex formation. Again, recoil does not play a significant role.

Park, I. S.↗

NASA NTRS1990

YBa2Cu3Ox Superconductors Doped With AgO

Improved superconductive materials made by doping compressed powder destined to become YBa2Cu3Ox superconductors with AgO prior to heat treatment. Magnetic properties unlike those of any other superconductor. Specimen suspendable below as well as above magnets, and suspension stable as long as material remains superconductive.

Peters, Palmer N.↗

NASA NTRS1989

Annealing group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency

The thermoelectric conversion efficiency of a GaP doped SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200 C to 1275 C in air to form large grains having a size over 50 microns and to form a GeGaP rich phase and a silicon rich phase containing SiP and SiO2 particles.

Vandersande, Jan W.↗

NASA NTRS1990

Microstructure and magnetization of doped Y-Ba-Ca-O materials prepared by melt quench and post annealing method

Y-Ba-Cu-O bulk materials prepared using the melt quench and post annealing method were shown to have very high maximum as well as remanent magnetization. Studies were carried out on materials prepared using this method which deviate from the Y:Ba:Cu = 1:2:3 stoichiometry. In one series of materials, only the stoichiometry was changed, in particular by introducing an excess of yttrium. In other cases, dopants including several rare earths were introduced. Effects of variations in composition on microstructure and phase evolution are discussed, as well as effects on the magnetic susceptibility and on the magnetization. The results show that doped materials can exhibit improvements in magnetic properties. Furthermore, the use of dopants sheds light on the role of defect sites in flux pinning.

Hojaji, H.↗

NASA NTRS1990

Stabilization of high T(sub c) phase in bismuth cuprate superconductor by lead doping

It has widely been ascertained that doping of lead in Bi:Sr:Ca:Cu:O systems promotes the growth of high T(sub c) (110 K) phase, improves critical current density, and lowers processing temperature. A systematic investigation is undertaken to determine optimum lead content and processing conditions to achieve these. A large number of samples with cationic compositions of Bi(2-x)Pb(x)Sr2Ca2Cu3 (x = 0.2 to 2.0) were prepared by conventional solid state reaction technique. Samples of all compositions were annealed together at a temperature and characterized through resistance-temperature (R-T) measurements and x ray diffraction (XRD) to determine the zero resistance temperature, T(sub c)(0) and to identify presence of phases, respectively. The annealing temperature was varied between 790 C to optimize processing parameters. Results are given. In brief, an optimum process is reported along with composition of leaded bismuth cuprate superconductor which yields nearly a high T(sub c) single phase with highly stable superconducting properties.

Gupta, Ram. P.↗

NASA NTRS1990

Magnetic properties of the 110K superconducting phase in Pb-doped Bi-Sr-Ca-Cu-O thin films

The relaxation of the remnant moment induced in a nearly single phase high T(sub c) thin film of Pd-doped Bi-Sr-Ca-Cu-O was investigated. Measurements reveal that the relaxation obeys a logarithmic time dependence for observation times up to 2000 seconds. The temperature dependence of the initial magnetization of the film and its decay rate are obtained. The initial magnetization monotonically decreases. However, the decay rate normalized by initial magnetization has a peak at approximately 14 K for an applied field of 500 gauss. The peak shifts to lower temperature for a stronger magnetic field. These data are compared with existing data on other high T(sub c) superconducting materials.

Tanaka, Atsushi↗

NASA NTRS1989

AlGaAs/InGaAs heterostructures with doped channels for discrete devices and monolithic amplifiers

AlGaAs/InGaAs/GaAs-type heterostructure with one or two doped channels have been used to fabricate both discrete devices and monolithic amplifiers for millimeter-wave operation. Maximum current densities of 1 A/mm and maximum transconductances of 530 mS/mm were obtained. 0.25 x 50 micron discrete devices delivered a power density of 1 W/mm with 2.9-dB gain and 25 percent efficiency at 60 GHz. A 100-micron monolithic one-stage amplifier demonstrated 93 mW (0.93-W/mm power density) at 31.5 GHz with 4.2-dB gain and 29 percent efficiency. A record 34 percent efficiency was achieved with a 53.7-mW output power and 4.8-dB gain.

Saunier, Paul↗

NASA NTRS1989

Antiferromagnetism in Co-57-doped La2CuO(4-y) studied by Moessbauer spectroscopy

Moessbauer effect studies of Co-57-doped La2CuO(4-y) were performed at temperatures between 4.2 K and room temperature. These confirm the antiferromagnetic ordering of these compounds below room temperature. Temperature dependence of the quadrupole splitting shows that the hyperfine field is at an angle with the c-axis.

Jha, S.↗

NASA NTRS1990

A 980 nm pseudomorphic single quantum well laser for pumping erbium-doped optical fiber amplifiers

The authors have fabricated ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs GRIN-SCH SQW (graded-index separate-confinement-heterostructure single-quantum-well) lasers, emitting at 980 nm, with a maximum output power of 240 mW from one facet and a 22 percent coupling efficiency into a 1.55-micron single-mode optical fiber. These lasers satisfy the requirements on efficient and compact pump sources for Er3+-doped fiber amplifiers.

Larsson, A.↗

NASA NTRS1991

Hole-Impeded-Doping-Superlattice LWIR Detectors

Hole-Impeded-Doping-Superlattice (HIDS) InAs devices proposed for use as photoconductive or photovoltaic detectors of radiation in long-wavelength infrared (LWIR) range of 8 to 17 micrometers. Array of HIDS devices fabricated on substrates GaAs or Si. Radiation incident on black surface, metal contacts for picture elements serve as reactors, effectively doubling optical path and thereby increasing absorption of photons. Photoconductive detector offers advantages of high gain and high impedance; photovoltaic detector offers lower noise and better interface to multiplexer readouts.

Maserjian, Joseph↗

NASA NTRS1990

InAs/GaAs and InAs doping superlattices

The extension of the optical response of narrow band gap III-V semiconductors into the long wavelength infrared radiation (LWIR) regime for high sensitivity sensor applications is a challenging problem. Recent advances in nipi doped GaAs superlattices, lattice mismatched epitaxy and the heteroepitaxial growth of III-V compound semiconductors on silicon substrates offer a number of opportunities. Researchers describe two different device approaches based on the molecular beam epitaxy (MBE) growth of superlattice materials which are directed to LWIR focal plane array technology. The first of these uses nipi superlattices fabricated in bulk InAs which has been grown on either GaAs or Si substrates. The second is based on the growth of a new pseudomorphic tetragonal phase of InAs on GaAs to create a semimetal/semiconductor superlattice material.

Grunthaner, Frank J.↗

NASA NTRS1990

Compensation for effects of ambient temperature on rare-earth doped fiber optic thermometer

Adamovsky, G.↗

NASA NTRS1991

Planar doped barrier devices for subharmonic mixers

An overview is given of planar doped barrier (PDB) devices for subharmonic mixer applications. A simplified description is given of PDB characteristics along with a more complete numerical analysis of the current versus voltage characteristics of typical structures. The analysis points out the tradeoffs between the device structure and the resulting characteristics that are important for mixer performance. Preliminary low-frequency characterization results are given for the device structures, and a computer analysis of subharmonic mixer parameters and performance is presented.

Lee, T. H.↗