Direct Writing of X-ray Gratings Using Zone-Plate-Array Lithography (ZPAL)
With the objective of providing the synchrotron and free-electron-laser communities with rapid turnaround and low prices for the highest quality and most advanced gratings and diffractive-focusing optics, LumArray has made specific improvements to its ZP-150 maskless photolithography system, which is based on Zone-Plate-Array Lithography (ZPAL), a technology unique to Lumarray. ZPAL’s advantages include an ability to correct in software for systematic patterning errors. Emphasis was placed on interferometric measurements of various contributors to patterning errors using Fizeau interferometry and a Mireau technique that was developed specifically for measuring errors within a micron-scale area. Average line-placement error was reduced below 20 nm using both pattern-file distortion and address-grid modification. The preferred implementation, address-grid modification, is hardware-based and requires no user intervention while also correcting more types of error. With continued iteration and refinement of the error measurements, we anticipate achieving global line-placement error below10nm. In order to investigate line-edge smoothness and high-frequency line-placement errors, a scheme for inspecting micron-sized areas was invented and implemented based on Mireau interferometry. This enabled the various contributions to be separately evaluated and measured. These included: exposure-dose variation, pattern-writing strategy and errors in the positioning of the microlenses. Deleterious crosstalk between microlenses was minimized via a pattern-dependent software modification. The impact of exposure threshold was revealed and adjustment made. The impact of address-grid fineness on line-edge roughness was likewise shown. Lastly, techniques were developed to measure and correct errors in the positioning of microlenses within the array. We expect final calibration of microlens positions to within 5nm.