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At least 649 records · Page 36

Cumulative fidelity of large-momentum-transfer clock atom interferometers in the presence of laser noise

Clock atom interferometry is an emerging technique in precision measurements that is particularly well suited for sensitivity enhancement through large momentum transfer (LMT). While current systems have demonstrated momentum separations of several hundreds of photon momenta, next-generation quantum sensors are targeting an LMT enhancement factor beyond 10 4 . However, the viability of LMT clock interferometers has recently come into question due to the potential impact of laser frequency noise. Here, in this work, we resolve this concern by analyzing the cumulative fidelity of sequential state inversions in an LMT atom interferometer. We show that the population error from 𝑛 pulses applied from alternating directions scales linearly with 𝑛. This is a significant advantage over the 𝑛 2 scaling that occurs when probing a two-level system 𝑛 times from the same direction. We further show that contributions to the interferometer signal from parasitic paths generated by imperfect pulses are negligible, for any loss mechanism. These results establish that laser frequency noise is not a practical limitation for the development of high-fidelity LMT clock atom interferometers.

Mach-Zehnder atom interferometry↗

Electron bunch dynamics and emission in particle-in-cell simulations of relativistic laser–solid interactions: On density artifacts, collisions, and numerical dispersion

Sub-optical-cycle dynamics of dense electron bunches in relativistic-intensity laser–solid interactions lead to the emission of high-order harmonics and attosecond light pulses. The capacity of particle-in-cell simulations to accurately model these dynamics is essential for the prediction of emission properties because the attosecond pulse intensity depends on the electron density distribution at the time of emission and on the temporal distribution of individual electron Lorentz-factors in an emitting electron bunch. Here, we show that in one-dimensional collisionless simulations, the peak density of the emitting electron bunch increases with the increase in the spatial resolution of the simulation grid. When collisions are added to the model, the peak electron density becomes independent of the spatial resolution. Collisions are shown to increase the spread of the peaks of Lorentz-factors of emitting electrons in time, especially in the regimes far from optimum generation conditions, thus leading to lower intensities of attosecond pulses as compared to those obtained in collisionless simulations.

Physics↗

Enhanced ionization of counter-rotating electrons via doorway states in ultrashort circularly polarized laser pulses

We have performed single-active-electron numerical calculations of neon- and argonlike atoms interacting with short, intense, circularly polarized laser pulses at wavelengths between 10 nm and 1000 nm. Our results reveal a surprisingly large change by a factor of about 100 in the ionization ratio of electrons in initial states counter-rotating with respect to the field over corotating electrons in the previously unexplored intermediate few-photon ionization regime. The physical mechanism behind this observation is related to resonant enhanced ionization via states close in energy to the initial states. These doorway states are accessible exclusively from the initial state for counter-rotating electrons within the respective wavelength regime. Furthermore, the results may open a new route for controlling the generation of spin-polarized electrons by ultrashort laser pulses.

74 ATOMIC AND MOLECULAR PHYSICS↗

Electron Density Measurements Using USPR (Final Scientific/Technical Report)

UC Davis has fabricated an ultrashort pulse reflectometer (USPR) diagnostic instrument for electron density profile measurements on compact, short duration, magnetically-confined fusion-energy concept devices such as spheromaks and FRCs. The USPR system transmits extremely short duration (~few nsec) chirped waveforms that together span 29 to 75 GHz. These chirped waveforms illuminate and reflect from the target plasma, with each frequency component reflecting from a different density layer (higher frequencies probe deeper into the plasma before reflecting). The reflected waveforms are split into roughly 42 different frequencies; time-of-flight (TOF) measurements made at each frequency with high resolution (~25 psec measurement resolution which corresponds to ~5 mm). These TOF data may then be inverted via software to generate electron density profiles with high time resolution (~10 μsec). At the heart of the system is a field programmable gate array (FPGA) based controller which collects and processes all of the USPR data in addition to generating all of the control signals required for maximum flexibility. The FPGA controller has the software flexibility to be easily reconfigured for different plasma devices, and the entire system sufficiently compact to be easily and quickly transported between devices. A high speed impulse generator was transformed into a set of three ultrashort pulse transmitter chirps using a combination of dispersive waveguide, frequency doublers and high-pass filters. A mm-wave controller was fabricated to sequentially switch between the three chirps, directing the chirps one-by-one to three different mm-wave assemblies spanning 29-75 GHz. Each mm-wave assembly consists of a high power active multiplier chain which converts the transmitter chirp to higher frequencies, and a broadband mixer which downconverts the reflected waveform to the 2-18 GHz range of the UPSR receiver. The 16-channel receiver (shared by all 3 mm-wave assemblies) was fabricated employing custom TOF modules capable of operating at a high 1 MHz sampling rate. Laboratory testing of the full system revealed the presence of unwanted harmonics from the multiplication process, with interference observed in the downconverted reflections at selected frequency channels that could not be completely filtered out. Additional interference effects arising from internal reflections within the mm-wave assemblies were minimized using a high-speed switch which served to “gate out” much of these reflections. The USPR diagnostic was transported and installed onto the HIT-SIU plasma device, becoming operational on 11/08/2022. Although designed to span 3 distinct mm-wave bands, the HIT-SIU plasmas at this time were sufficiently low density such that only the lowest of the three bands was likely to have strong plasma reflections. The system was then set to operate on only the lowest band (assembly #1), with data collected every 1 μsec rather than 3 μsec which would have been the case when cycling through all three bands. Connected to HIT-SIU, time-varying plasma reflections were observed on 9 of 16 possible frequency channels. Close examination of the data collected revealed issues previously unobserved in laboratory testing, associated with (a) reflections from the small aperture horns required for operation within the HIT-SIU device, and (b) a dependence of the recorded TOF with the threshold voltage of a given channel. Plans were made to address each of these issues before undertaking any future campaigns.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Encapsulation of Monolayer 2D Materials Using Kinetic Energy-Controlled Pulsed Laser Deposition

The integration of monolayer (ML) two-dimensional (2D) materials into next-generation microelectronics, optoelectronics, and sensors is hindered by their sensitivity to environmental exposure. Deposition of additional layers for encapsulation or growth on ML 2D materials by versatile but energetic plasma techniques such as pulsed laser deposition (PLD) has not been considered at the monolayer level because of potential damage caused by hyperthermal species with kinetic energies (KEs) exceeding the threshold displacement energy (TDE) of the ML. Here, we describe a general strategy to understand and mitigate damage during PLD by reducing the incident KE of ablated species below the TDE of the 2D monolayer using background gas collisions. Ion flux diagnostics, combined with in situ Raman spectroscopy of monolayer graphene during PLD of amorphous boron nitride (a-BN) as a dielectric encapsulation layer, show that damage is primarily correlated with fast ions that penetrate the background gas in accordance with Beer’s Law and are often overlooked in ICCD imaging due to the dominance of the bright, delayed plasma luminescence. Significantly, if fast ions are eliminated and a ∼2 nm-thick a-BN layer is “soft landed”, the monolayer graphene is effectively protected from damage by high KE species in the boron nitride plasma plume. Deposited a-BN films display a characteristic dielectric constant of 3.6 at 100 kHz and tunable charge injection properties. Our results enable PLD as a viable option for encapsulation and thin film growth onto ML 2D materials, with implications for both fundamental research and device integration.

2D materials↗

Design and implementation of a portable diagnostic system for Thomson scattering and optical emission spectroscopy measurements

A diagnostic system, which has a design goal of high-portability, has been designed at Oak Ridge National Laboratory (ORNL). This project aims at providing measurements of key plasma parameters (ne, Te, ni, Ti) for fusion-relevant devices, utilizing Thomson scattering (TS) and optical emission spectroscopy (OES). The innovative design employs mostly commercial off-the-shelf instrumentation and a traveling team of researchers to conduct measurements at various magnetic-confinement plasma devices. The TS diagnostic uses a Quantel Q-smart 1500 Nd:YAG laser with a 2ω harmonic generator to produce up to 850 mJ of 532 nm laser pulses at 10 Hz. Collection optics placed at the detection port consists of an 11 × 3 optical fiber bundle, where the TS diagnostic uses an 11 × 1 subset array of the fibers, the OES diagnostic uses another 11 fibers, and the remaining fibers are available to the host institution. The detection system is comprised of two separate IsoPlane-320 spectrometers with triple-grating turrets of various line spacing and two PI-MAX 4 intensified CCD detectors, used simultaneously to measure a broad range of ion, impurity, and electron parameters. The self-contained diagnostic package also includes a data processing and storage system. The design and initial implementation of the TS-OES diagnostic system are described. The experiments from the proof-of-principle operation of the portable package on a high density (∼2.5 × 1022 m−3) and low-temperature (∼5 eV) electrothermal arc source at ORNL are also discussed.

Kafle, N. (ORCID:000000028144787X)↗

Light-field control of real and virtual charge carriers

We report light-driven electronic excitation is a cornerstone for energy and information transfer. In the interaction of intense and ultrafast light fields with solids, electrons may be excited irreversibly, or transiently during illumination only. As the transient electron population cannot be observed after the light pulse is gone, it is referred to as virtual, whereas the population that remains excited is called real. Virtual charge carriers have recently been associated with high-harmonic generation and transient absorption, but photocurrent generation may stem from real as well as virtual charge carriers. However, a link between the generation of the carrier types and their importance for observables of technological relevance is missing. Here we show that real and virtual charge carriers can be excited and disentangled in the optical generation of currents in a gold–graphene–gold heterostructure using few-cycle laser pulses. Depending on the waveform used for photoexcitation, real carriers receive net momentum and propagate to the gold electrodes, whereas virtual carriers generate a polarization response read out at the gold–graphene interfaces. On the basis of these insights, we further demonstrate a proof of concept of a logic gate for future lightwave electronics. Our results offer a direct means to monitor and excite real and virtual charge carriers. Individual control over each type of carrier will markedly increase the integrated-circuit design space and bring petahertz signal processing closer to reality.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Optics-on-a-chip for ultrafast manipulation of 350-MHz hard x-ray pulses

Microelectromechanical systems (MEMS) are miniature devices integrated into a vast range of industrial and consumer applications. Optical MEMS are developed for dynamic spatiotemporal control in lightwave manipulation and communication as modulators, switches, multiplexers, spectrometer, etc. However, they have not been shown to function similarly in sub-nm wavelength regimes, namely, with hard x-rays, as high-brilliance pulsed x-rays have proven powerful for addressing challenges in time-domain science, from energy conversion to neurobiological control. While desirable temporal properties of x-ray pulses can be enhanced by optics, conventional x-ray optics are inherently massive in size, hence, never dynamic. We demonstrate highly ultrafast x-ray optics-on-a-chip based on MEMS capable of modulating hard x-ray pulses exceeding 350 MHz, 10 3 × higher than any other mechanical modulator, with a pulse purity >10 6 without compromising the spectral brilliance. Moreover, the timing characteristics of the devices can be tuned on-the-fly to deliver optimal pulse properties to create a host of dynamic x-ray instruments and applications, impossible with traditional optics of 10 9 × bulkier and more massive. The advent of the ultrafast optics-on-a-chip heralds a new paradigm of x-ray photonics, time-domain science, and accelerator diagnostics, especially at not only the future-generation light sources that offer coherent and high-frequency pulses but also lab-based facilities that normally do not offer timing structures.

42 ENGINEERING↗

Validation of ablation model for polyethylene using pulsed x-ray and proton exposures

The surface erosion of polyethylene is interrogated using pulsed x rays at the Z Machine (Sandia National Laboratories) and with proton beams at the Gamble II generator (Naval Research Laboratory) to validate a coupled model for volumetric thermal ablation, photoionization, finite-rate decomposition, and molecular recombination of radicals. The intense radiation pulses (up to ∼1014W/m2 over tens of nanoseconds) are used to generate one-dimensional vapor flows with low ionization fractions and a simplified geometry compared to typical laser ablation, allowing for evaluation of the model under local thermal equilibrium conditions. Areal momentum carried by the ensuing uniaxial hydrodynamic shock is used to indicate the extent of ablation. The threshold fluence for ablation is found to be in close correspondence with the bulk melt transition, and reasonable agreement with the model is obtained for peak temperatures in polyethylene up to 5500 K and heating rates up to 1011K/s where thermal decomposition reactions are also active.

Moore, N. W. (ORCID:0000000272259674)↗

Generation of superposed orbital angular momentum beams using a free-electron laser oscillator

With wavelength tunability, free-electron lasers (FELs) are well-suited for generating orbital angular momentum (OAM) beams in a wide photon energy range. We report here the first experimental demonstration of OAM beam generation using an oscillator FEL with the tens of picosecond pulse duration. Lasing around 458 nm, we have produced the four lowest orders of superposed Laguerre-Gaussian beams using a very long FEL resonator of 53.73 m. The produced beams have good beam quality, excellent stability, and substantial average power. We have also developed a pulsed operation mode for these beams with a highly reproducible temporal structure for a range of repetition rate of 1–30 Hz. This development can be extended to short wavelengths, for example to x-rays using a future x-ray FEL oscillator. The OAM operation of such a storage-ring FEL also paves the way for the generation of OAM gamma-ray beams via inverse Compton scattering.

47 OTHER INSTRUMENTATION↗

High harmonic generation in mixed XUV and NIR fields at a free-electron laser

Abstract We present the results of an experiment investigating the generation of high-order harmonics by a femtosecond near-infrared (NIR) laser pulse in the presence of an extreme ultraviolet (XUV) field provided by a free-electron laser (FEL), a process referred to as XUV-assisted high-order harmonic generation (HHG). Our experimental findings show that the XUV field can lead to a small enhancement in the harmonic yield when the XUV and NIR pulses overlap in time, while a strong decrease of the HHG yield and a red shift of the HHG spectrum is observed when the XUV precedes the NIR pulse. The latter observations are in qualitative agreement with model calculations that consider the effect of a decreased number of neutral emitters but are at odds with the predicted effect of the correspondingly increased ionization fraction on the phase matching. Our study demonstrates the technical feasibility of XUV-assisted HHG experiments at FELs, which may provide new avenues to investigate correlation-driven electron dynamics as well as novel ways to study and control propagation effects and phase matching in HHG.

47 OTHER INSTRUMENTATION↗

Temporal pre-pulse shaping in dual pulse laser produced plasma for the optimization of the EUV source in tin microdroplet system

Dual-laser beams interacting with small droplets of liquid tin are currently the most efficient systems for producing the 13.5 nm EUV photon radiation source required for the next generation microchips. Usually, EUV light is produced during the second main-pulse stage, while the pre-pulse (PP) is used for target preparation, i.e., droplet preheating, vaporization, and target deformation. However, the PP laser energy can be utilized more efficiently if the EUV producing plasma is being developed during the PP stage as well. In this work, we study the ways of optimization of the PP laser temporal shape to achieve conditions for maximum EUV output during the pre-pulse. The size of the deformed droplet is kept optimized for the following main laser pulse. Our simulations showed a significant increase in the EUV output at the pre-pulse stage when a ramping profile is used for the laser temporal shape. Using the ramped square pre-pulse produces 24% gain in the EUV output in comparison with the standard Gaussian temporal profile (i.e., regular Nd:YAG shape) for the same energy of the laser pulse.

36 MATERIALS SCIENCE↗

Experimental demonstration of enhanced self-amplified spontaneous emission by photocathode temporal shaping and self-compression in a magnetic wiggler

In this paper we demonstrate experimentally the generation of attosecond soft X-ray free-electron laser (XFEL) pulses based on a novel approach to enhanced self-amplfied spontaneous emission. Instead of utilizing an external laser, we shape the electron beam at the cathode by laser pulse stacking. We enhance the high-current spike in the beam profile through a self-compression process which uses short-range coherent synchrotron radiation in a wiggler and a downstream magnetic chicane. The undulator taper is then matched with the energy chirp along the beam for attosecond XFEL generation. Start-to-end simulations are performed to demonstrate the proposed method. The measured spectra suggest that a ~250 as pulse duration is achieved at ~940 eV in the experiment.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Pulsed contact glow discharge electrification for online material quantification

Real-time elemental analysis of liquids in extreme environments remains a significant challenge for sensor development, particularly in applications such as advanced nuclear reactors. Plasma-based optical emission spectroscopy offers a promising solution. In this study, we investigate pulsed contact glow discharge electrolysis (CGDE) as an alternative plasma generation method for emission-based material quantification. Using aqueous NaCl solutions, we examine the role of discharge polarity on plasma behavior, emission characteristics, and spectral output. Our results demonstrate that cathodic discharges generate more energetic plasmas, enabling the detection of ionic species such as cerium, while anodic discharges favor atomic emission. These findings reveal a potential dual-mode sensing capability controlled by circuit configuration rather than hardware changes. Through synchronized measurements of emission, current, bubble, and spectral dynamics, we present a model in which electron emission and ohmic heating drive plasma formation. This model enhances our understanding of pulsed-CGDE and supports its potential as a versatile, adaptable platform for future deployment in high-temperature liquids such as molten salts.

98 - NUCLEAR DISARMAMENT, SAFEGUARDS, AND PHYSICAL↗

Next steps in high-repetition-rate laser development for Thomson scattering

Design of a next generation high-rep-rate laser system is underway, aiming for a maximum rep rate of 100 kHz for 1 ms. This will be a "pulse-burst" laser, which is a type of heat-capacity laser. Heat-capacity laser operation is characterized by a burst of pulses of limited duration, with burst length ≤100 ms and pulse rep rate ≥1 kHz. Waste heat accumulates in the laser rod during the burst. This heat is deposited evenly throughout the rod volume, with very little heat removed during the burst, such that temperature rises evenly across the rod radius. Thus beam distortion due to thermal gradients is small. Heat is removed from the rod after the burst, with typically tens of seconds between bursts. Pulse-burst operation of flashlamp pumped Nd:YAG lasers is a cost-effective route to high-rep-rate capability. Pulse-burst laser systems with "fast burst" rep rates in the range of 10–20 kHz have been built for the Thomson scattering diagnostics on MST, NSTX-U, and LHD. For Thomson scattering diagnostic application, the typical requirements are 1064 nm, 1–2 J/pulse, ≤30 ns FWHM pulse, with a top-hat beam profile. A major requirement for this next generation laser system is flexibility in burst sequence programs, ranging from 1 kHz for 100 ms to 100 kHz for 1 ms, and a variety of scenarios in between so that operation can be tailored to plasma experiment requirements. Flashlamp pumping will be used for this next generation laser because it is inexpensive and flexible. A new switch-regulated flashlamp driver will provide improved flashlamp control at lower cost. Additional design issues such as the optimum flashlamp pumping spectrum and optimum Nd doping will be addressed. The use of commercial off-the-shelf components will be maximized in this laser system so that pulse-burst systems can be developed and built by others for new applications.

47 OTHER INSTRUMENTATION↗

A Digital Three Level Space Vector Modulator for High Frequency Vector Sequence Generation

This letter proposes a digital high-speed three-level space vector pulse width modulator (3L-SVPWM). A conventional 3L-SVPWM is typically computation-based, involving a sequential execution of sub-tasks on a digital signal processor (DSP) based controller. The resulting high computation time of 5.4 μs limits the implementation of additional control blocks for switching frequencies greater than 100 kHz. This is overcome by transforming sub-tasks into digital blocks with 1-0 decisions and simpler arithmetic operations. The sub-task blocks are executed concurrently on a programmable logic device (PLD). Hence, a fast 3L-SVPWM execution in 140 ns is achieved. The proposed digital 3L-SVPWM enables high switching frequency operation of wide bandgap (WBG) device-based 3 L inverters to generate high fundamental frequency waveforms. A finite state machine is an integral part of the proposed implementation with the ability to generate any vector sequence, maximizing the usage of redundant vector states in 3L-SVPWM. Here, the proposed digital 3L-SVPWM operation is demonstrated with a GaN-based 3 L active neutral point clamped (3L-ANPC) inverter. Experimental results are presented at 250 kHz switching frequency to generate vector sequences for center-aligned SVPWM (CA-SVPWM) and common mode voltage reduced SVPWM (CMVR-SVPWM). The results also showcase a high fundamental frequency generation capability of 10 kHz.

active neutral point clamped inverter↗

Multi-octave-spanning supercontinuum generation through high-energy laser filaments in YAG and ZnSe pumped by a 2.4 μm femtosecond Cr:ZnSe laser

Abstract We present experimental and numerical investigations of high-energy mid-infrared filamentation with multi-octave-spanning supercontinuum generation (SCG), pumped by a 2.4 μm, 250 fs Cr:ZnSe chirped-pulse laser amplifier. The SCG is demonstrated in both anomalous and normal dispersion regimes with YAG and polycrystalline ZnSe, respectively. The formation of stable and robust single filaments along with the visible-to-mid-infrared SCG is obtained with a pump energy of up to 100 μJ in a 6-mm-long YAG medium. To the best of the authors’ knowledge, this is the highest-energy multi-octave-spanning SCG from a laser filament in a solid. On the other hand, the SCG and even-harmonic generation based on random quasi-phase matching (RQPM) are simultaneously observed from the single filaments in a 6-mm-long polycrystalline ZnSe medium with a pump energy of up to 15 μJ. The numerical simulations based on unidirectional pulse propagation equation and RQPM show excellent agreement with the measured multi-octave-spanning SCG and even-harmonic generation. They also reveal the temporal structure of mid-infrared filaments, such as soliton-like self-compression in YAG and pulse broadening in ZnSe.

Optics↗

In operando cryo-STEM of pulse-induced charge density wave switching in TaS 2

The charge density wave material 1T-TaS 2 exhibits a pulse-induced insulator-to-metal transition, which shows promise for next-generation electronics such as memristive memory and neuromorphic hardware. However, the rational design of TaS 2 devices is hindered by a poor understanding of the switching mechanism, the pulse-induced phase, and the influence of material defects. Here, we operate a 2-terminal TaS 2 device within a scanning transmission electron microscope at cryogenic temperature, and directly visualize the changing charge density wave structure with nanoscale spatial resolution and down to 300 μs temporal resolution. We show that the pulse-induced transition is driven by Joule heating, and that the pulse-induced state corresponds to the nearly commensurate and incommensurate charge density wave phases, depending on the applied voltage amplitude. With our in operando cryogenic electron microscopy experiments, we directly correlate the charge density wave structure with the device resistance, and show that dislocations significantly impact device performance. This work resolves fundamental questions of resistive switching in TaS 2 devices, critical for engineering reliable and scalable TaS 2 electronics.

36 MATERIALS SCIENCE↗