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All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Telecom-Luminescent and Room Temperature Coherent Tetrathiafulvalene-Based Qubits in Spin-Rich Solids

One of the main challenges facing quantum information science (QIS) is the development of robust qubits that can be op-erated under ambient conditions. Current state-of-the-art anionic nitrogen vacancy center (NV–) defect qubits are robust enough to be operated at room temperature but lack scalability and tunability. These are areas where molecular qubits excel, although they typically suffer from poor air stability and fast decoherence at elevated temperatures and in magneti-cally noisy environments. Organic-based systems offer advantages to this end, although examples retaining room tem-perature coherence are still rare. Furthermore, most organic-based systems lack optical transitions similar to NV– centers that could allow for optical initialization and readout. Here we report two new organic-based qubit candidates that demonstrate room temperature coherence in nuclear and electron spin-rich environments. These qubits luminesce far into the near-infrared (NIR, 700-1700 nm) and telecom (~1260-1625 nm) regions, ideal for biological sensing and com-munications applications, respectively.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

X-ray linear dichroic tomography of crystallographic and topological defects

Abstract The functionality of materials is determined by their composition 1–4 and microstructure, that is, the distribution and orientation of crystalline grains, grain boundaries and the defects within them 5,6 . Until now, characterization techniques that map the distribution of grains, their orientation and the presence of defects have been limited to surface investigations, to spatial resolutions of a few hundred nanometres or to systems of thickness around 100 nm, thus requiring destructive sample preparation for measurements and preventing the study of system-representative volumes or the investigation of materials under operational conditions 7–15 . Here we present X-ray linear dichroic orientation tomography (XL-DOT), a quantitative, non-invasive technique that allows for an intragranular and intergranular characterization of extended polycrystalline and non-crystalline 16 materials in three dimensions. We present the detailed characterization of a polycrystalline sample of vanadium pentoxide (V 2 O 5 ), a key catalyst in the production of sulfuric acid 17 . We determine the nanoscale composition, microstructure and crystal orientation throughout the polycrystalline sample with 73 nm spatial resolution. We identify and characterize grains, as well as twist, tilt and twin grain boundaries. We further observe the creation and annihilation of topological defects promoted by the presence of volume crystallographic defects. The non-destructive and spectroscopic nature of our method opens the door to operando combined chemical and microstructural investigations 11,18 of functional materials, including energy, mechanical and quantum materials.

Science & Technology - Other Topics↗
DOE OSTI2021

Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μ m epitaxial layers

Advances in the growth processes of 4H-SiC epitaxial layers have led to the continued expansion of epilayer thickness, allowing for the detection of more penetrative radioactive particles. In this work, we report the fabrication and characterization of high-resolution Schottky barrier radiation detectors on 250 μm thick n-type 4H-SiC epitaxial layers, the highest reported thickness to date. Several 8 × 8 mm 2 detectors were fabricated from a diced 100 mm diameter 4H-SiC epitaxial wafer grown on a conductive 4H-SiC substrate with a mean micropipe density of 0.11 cm -2 From the Mott–Schottky plots, the effective doping concentration was found to be in the range (0.95–1.85) × 10 14 cm -3 , implying that full depletion could be achieved at ~5.7 kV (0.5 MV/cm at the interface). The current-voltage characteristics demonstrated consistently low leakage current densities of 1–3 nA/cm 2 at a reverse bias of -800 V. This resulted in the pulse-height spectra generated using a 241Am alpha source (5486 keV) manifesting an energy resolution of less than 0.5% full width at half maximum (FWHM) for all the detectors at -200 V. The charge collection efficiencies (CCEs) were measured to be 98–99% with no discernable correlation to the energy resolution. A drift-diffusion model fit to the variation of CCE as a function of bias voltage, revealed a minority carrier diffusion length of ~10 μm. Deep level transient spectroscopy measurements on the best resolution detector revealed that the excellent performance was the result of having ultralow concentrations of the order of 1011 cm-3 lifetime limiting defects—Z 1/2 and EH 6/7 .

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Screening of hot electrons in the ferroelectric semiconductor In 2 Se 3

We report that in a conventional semiconductor, electrons (e) scatter efficiently with longitudinal-optical phonons (ph LO ) via the Fröhlich interaction, e.g., in polaron formation or hot-electron cooling. Recent studies on lead halide perovskites have suggested that the Fröhlich interaction may be sufficiently screened by the polar lattice. Here we show that hot-electron cooling in a layered ferroelectric semiconductor In 2 Se 3 slows down by 50% as temperature is increased from 115 to 387 K; this decrease is about four times more than that predicted by the Fröhlich model. We suggest that screening of Fröhlich interaction by polar domains or fluctuations in the ferroelectric semiconductor may be responsible for the reduced e-ph LO scattering. Such enhanced screening in polar materials featuring anharmonic lattice instability may also reduce carrier scattering with other charge carriers or with charged defects, leading to improved optoelectronic properties.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Radiation-resilient InAs quantum dot lasers

Displacement damage from particle radiation increases the threshold current of semiconductor lasers, impeding the deployment of photonic systems in harsh radiation environments. Replacing conventional quantum well (QW) gain regions with quantum dots (QDs) has been shown to suppress the radiation-induced increase in threshold current owing to three-dimensional carrier confinement, which effectively segregates charge carriers away from radiation-induced defects. However, radiation-induced change in threshold current is also affected by extrinsic design elements of a laser, such as photon lifetime, and therefore provides only a partial assessment of the radiation hardness. In this work, we advance the understanding of the radiation resiliency of InAs QD lasers by extracting the change in the nonradiative recombination rate after radiation exposure, which provides a more fundamental assessment of the intrinsic radiation hardness of InAs QD gain regions. We find that carriers that populate InAs QD states have a nonradiative recombination rate that is over an order-of-magnitude less sensitive to neutron radiation relative to carriers in InGaAsP QWs. InAs QD lasers must be designed such that carriers primarily occupy QD states, preventing carrier spillover into surrounding barrier layers to obtain the maximum benefit. Furthermore, we show that enhanced radiation hardness is observed in InAs QD lasers grown on both highly lattice-mismatched silicon substrates and native GaAs substrates, further broadening the appeal of InAs QD lasers as reliable light sources for photonic systems operating in harsh radiation environments.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Loss channels affecting lithium niobate phononic crystal resonators at cryogenic temperature

Here, we investigate the performance of microwave-frequency phononic crystal resonators fabricated on thin-film lithium niobate for integration with superconducting quantum circuits. For different design geometries at millikelvin temperatures, we achieve mechanical internal quality factors Qi above 10 5 –10 6 at high microwave drive power, corresponding to 5×10 6 phonons inside the resonator. By sweeping the defect size of resonators with identical mirror cell designs, we are able to indirectly observe signatures of the complete phononic bandgap via the resonators' internal quality factors. Examination of quality factors' temperature dependence shows how superconducting and two-level system (TLS) loss channels impact device performance. Finally, we observe an anomalous low-temperature frequency shift consistent with resonant TLS decay and find that the material choice can help to mitigate these losses.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Anomalies in the space of coupling constants and their dynamical applications I

It is customary to couple a quantum system to external classical fields. One application is to couple the global symmetries of the system (including the Poincaré symmetry) to background gauge fields (and a metric for the Poincaré symmetry). Failure of gauge invariance of the partition function under gauge transformations of these fields reflects ’t Hooft anomalies. It is also common to view the ordinary (scalar) coupling constants as background fields, i.e. to study the theory when they are spacetime dependent. We will show that the notion of ’t Hooft anomalies can be extended naturally to include these scalar background fields. Just as ordinary ’t Hooft anomalies allow us to deduce dynamical consequences about the phases of the theory and its defects, the same is true for these generalized ’t Hooft anomalies. Specifically, since the coupling constants vary, we can learn that certain phase transitions must be present. We will demonstrate these anomalies and their applications in simple pedagogical examples in one dimension (quantum mechanics) and in some two, three, and four-dimensional quantum field theories. An anomaly is an example of an invertible field theory, which can be described as an object in (generalized) differential cohomology. We give an introduction to this perspective. Also, we use Quillen’s superconnections to derive the anomaly for a free spinor field with variable mass. In a companion paper we will study four-dimensional gauge theories showing how our view unifies and extends many recently obtained results.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Scaling Superconducting Quantum Computers with Chiplet Architectures

Fixed-frequency transmon quantum computers (QCs) have advanced in coherence times, addressability, and gate fidelities. Unfortunately, these devices are restricted by the number of on-chip qubits, capping processing power and slowing progress toward fault-tolerance. Although emerging transmon devices feature over 100 qubits, building QCs large enough for meaningful demonstrations of quantum advantage requires overcoming many design challenges. For example, today’s transmon qubits suffer from significant variation due to limited precision in fabrication. As a result, barring significant improvements in current fabrication techniques, scaling QCs by building ever larger individual chips with more qubits is hampered by device variation. Severe device variation that degrades QC performance is referred to as a defect. Here, we focus on a specific defect known as a frequency collision. When transmon frequencies collide, their difference falls within a range that limits two-qubit gate fidelity. Frequency collisions occur with greater probability on larger QCs, causing collision-free yields to decline as the number of on-chip qubits increases. As a solution, we propose exploiting the higher yields associated with smaller QCs by integrating quantum chiplets within quantum multi-chip modules (MCMs). Yield, gate performance, and application-based analysis show the feasibility of QC scaling through modularity. Our results demonstrate that chiplet architectures, relative to monolithic designs, benefit from average yield improvements ranging from 9.6 – 92.6 × for ≲5 qubit machines. In addition, our simulations explore the design space of chiplet systems and discover configurations that demonstrate average two-qubit gate infidelity reductions that are at best 0.815 × their monolithic counterpart. Lastly, we observe that carefully-selected modular systems achieve fidelity improvements on a range of benchmark circuits.

quantum architecture↗
DOE OSTI2020

Transient Studies of Nonequilibrium Transport in Two-Dimensional Semiconductors

The overarching objective of research under DOE support has been to investigate emergent carrier phenomena in different two-dimensional (2D) systems, under conditions where they are driven far from equilibrium. The description of nonequilibrium transport has long represented one of the most enduring challenges in condensed-matter physics, in large part due to the need to invoke the role of complex many-body phenomena (electron-phonon and electron-electron coupling) in this regime. In this project, we have explored aspects of this problem in a variety of different two-dimensional systems. These include the modulation-doped two-dimensional electrons gas, or 2DEG, in GaAs/AlGaAs heterostructures; the electron and hole systems in graphene and its related hetero-structures, and; the strongly-confined electron layers in transition-metal dichalcogenide (MoS 2 and WS 2 ) and trichalcogenide (TiS 3 ) materials. Significant understanding has been achieved in a number of different areas, as we elaborate upon in subsequent sections of this proposal: Nanoscale spectroscopy of defect-related barriers in MoS2 Negative differential conductance due to inter-valley scattering in WS 2 under high fields Incipient localization due to scattering from frozen-phonon disorder in quantum point contacts High-field transient transport in graphene/hexagonal BN heterostructures Universal voltage scaling of quantum corrections in graphene under nonequilibrium A defining feature of much of this research has been an approach to problem solving in which novel experimental techniques (such as transient electrical pulsing and scanning-probe microscopy) are combined with the development (in collaboration with colleagues from condensed-matter theory) of sophisticated models, a strategy that we propose to continue in our future research. In recent years, we have developed an increasing capacity for handling atomically-thin materials, and their van der Waals systems, a capacity that is reflected in the balance of topics listed above.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Effect of metal encapsulation on bulk superconducting properties of niobium thin films used in qubits

Niobium metal occupies nearly 100% of the volume of a typical 2D transmon device. While the aluminum Josephson junction is of utmost importance, maintaining quantum coherence across the entire device means that pair-breaking in Nb leads, capacitive pads, and readout resonators can be a major source of decoherence. The established contributors are surface oxides and hydroxides, as well as absorbed hydrogen and oxygen. Metal encapsulation of freshly grown surfaces with non-oxidizing metals, preferably without breaking the vacuum, is a successful strategy to mitigate these issues. While the positive effects of encapsulation are undeniable, it is important to understand its impact on the macroscopic behavior of niobium films. We present a comprehensive study of the bulk superconducting properties of Nb thin films encapsulated with gold and palladium/gold, and compare them to those of bare Nb films. Magneto-optical imaging, magnetization, resistivity, and London and Campbell penetration depth measurements reveal significant differences in encapsulated samples. Both sputtered, and epitaxial Au-capped films exhibit the highest residual resistivity ratio and superconducting transition temperature, as well as the lowest upper critical field, London penetration depth, and critical current. These results are in good agreement with the microscopic theory of anisotropic normal and superconducting states of Nb. We conclude that pair-breaking in the bulk of niobium films, driven by disorder throughout the film rather than just at the surface, is a significant source of quantum decoherence in transmons. We also conclude that gold capping not only passivates the surface but also affects the properties of the entire film, significantly reducing the scattering rate due to defects likely induced by surface diffusion if the film is not protected immediately after fabrication.

Datta, Amlan [Ames Lab; Iowa State U.]↗
DOE OSTI2023

Electronic and Optical Properties of NV Center in Diamonds for Sensing Applications: Experimental and First Principles Density Functional Theory Approach

The nitrogen-vacancy (NV) center in a nanodiamond (ND) crystal is one of the best candidate materials for quantum sensing and metrology applications at elevated environmental conditions. The NV center can be used to achieve an unprecedented level of sensitivity for sensing applications at high temperatures and pressures. The NV center is also proven to be useful for magnetic field sensing. Furthermore, it can be used for applications in the sensing of valuable minerals such as rare earth elements (REEs) from the crude and waste subsurface materials. This work presents computational and experimental studies on electronic and optical properties of bulk diamond with N and NV defects. ND in MOF/polymer materials will be experimentally encapsulated. The transverse spin relaxation time of the NV center will be measured in bare and encapsulated ND. Different doping elements will be introduced on the surfaces and present surface electronic properties to study the surfaces with shallow NV center for quantum sensing applications.

Paudel, Hari P.↗
DOE OSTI2023

Revealing intrinsic domains and fluctuations of moiré magnetism by a wide-field quantum microscope

Moiré magnetism featured by stacking engineered atomic registry and lattice interactions has recently emerged as an appealing quantum state of matter at the forefront of condensed matter physics research. Nanoscale imaging of moiré magnets is highly desirable and serves as a prerequisite to investigate a broad range of intriguing physics underlying the interplay between topology, electronic correlations, and unconventional nanomagnetism. Here we report spin defect-based wide-field imaging of magnetic domains and spin fluctuations in twisted double trilayer (tDT) chromium triiodide CrI 3 . We explicitly show that intrinsic moiré domains of opposite magnetizations appear over arrays of moiré supercells in low-twist-angle tDT CrI 3 . In contrast, spin fluctuations measured in tDT CrI 3 manifest little spatial variations on the same mesoscopic length scale due to the dominant driving force of intralayer exchange interaction. Our results enrich the current understanding of exotic magnetic phases sustained by moiré magnetism and highlight the opportunities provided by quantum spin sensors in probing microscopic spin related phenomena on two-dimensional flatland.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Tuning colour centres at a twisted hexagonal boron nitride interface

The colour centre platform holds promise for quantum technologies, and hexagonal boron nitride has attracted attention due to the high brightness and stability, optically addressable spin states and wide wavelength coverage discovered in its emitters. However, its application is hindered by the typically random defect distribution and complex mesoscopic environment. In this study, employing cathodoluminescence, we demonstrate on-demand activation and control of colour centre emission at the twisted interface of two hexagonal boron nitride flakes. Further, we show that colour centre emission brightness can be enhanced by two orders of magnitude by tuning the twist angle. Additionally, by applying an external voltage, nearly 100% brightness modulation is achieved. Our ab initio GW and GW plus Bethe–Salpeter equation calculations suggest that the emission is correlated to nitrogen vacancies and that a twist-induced moiré potential facilitates electron–hole recombination. This mechanism is further exploited to draw nanoscale colour centre patterns using electron beams.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Substitutional doping of 2D transition metal dichalcogenides for device applications: Current status, challenges and prospects

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as a class of materials with exceptional electronic, optical, and mechanical properties, making them highly tunable for diverse applications in nanoelectronics, optoelectronics, and catalysis. Here, this review focuses on substitutional doping of TMDs, a key strategy to tailor their properties and enhance device performance, with a focus on its applications over the past five years (2019–2024). We delve into both theoretical and experimental doping approaches, including established methods like chemical vapor transport (CVT) and chemical vapor deposition (CVD) alongside liquid phase exfoliation (LPE) and post-synthesis treatments. Advanced growth techniques are also explored. Challenges like dopant uniformity, concentration control, and stability are addressed. The influence of various dopants on the electronic band structure, carrier concentration, and defect engineering is analyzed in detail. We further explore recent advancements in utilizing doped TMDs for field-effect transistors (FETs), photodetectors, sensors, photovoltaics, optoelectronic devices, energy storage and conversion, and even quantum computers. By examining both the potential and limitations of substitutional doping, this review aims to propel future research and technological advancements in this exciting field.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Eutectic Processing of Semiconductor Colloidal Nanocrystals for Energy Applications

Colloidal semiconductor nanocrystals (NCs) offer a costeffective platform for light-energy conversion in X-ray scintillators, photovoltaics, lasers, and display technologies. Yet, device-relevant NCs often require complex heterostructured compositions, where lattice imperfections compromise the efficiency and stability of photoconversion processes. Here, we show that a simple synthetic detour through a eutectic state of II−VI semiconductor NCs (e.g., CdSe, ZnSe) with halide salts (e.g., CdCl 2 , ZnCl 2 ) overcomes this limitation by melting and reconstructing NC lattices into defect-free alloyed and core/shell architectures. Applied to ternary CdSeTe NCs, this process produces downconverters with record brightness and minimal line widths, delivering a 3-fold increase in film-side external quantum efficiency of commercial CdTe photovoltaic modules (First Solar Inc.). Meanwhile, eutectic processing of CdSe-based core/shell emitters yields an 8-fold enhancement in their photoluminescence stability under backlight operation, addressing the reliability bottleneck for display technologies. Together, these findings establish eutectic NC processing as a scalable route to efficient, durable photoconversion materials for energy applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Magnetic order in nanogranular iron germanium (Fe 0.53 Ge 0.47 ) films

We study the effect of strain on the magnetic properties and magnetization configurations in nanogranular Fe x Ge 1-x films (x = 0.53 ± 0.05) with and without B20 FeGe nanocrystals surrounded by an amorphous structure. Relaxed films on amorphous silicon nitride membranes reveal a disordered skyrmion phase while films near and on top of a rigid substrate favor ferromagnetism and an anisotropic hybridization of Fe d levels and spin-polarized Ge sp band states. The weakly coupled topological states emerge at room temperature and become more abundant at cryogenic temperatures without showing indications of pinning at defects or confinement to individual grains. These results demonstrate the possibility to control magnetic exchange and topological magnetism by strain and inform magnetoelasticity-mediated voltage control of topological phases in amorphous quantum materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Friction-mediated phase transition in confined active nematics

Using a minimal continuum model, we investigate the interplay between circular confinement and substrate friction in active nematics. Upon increasing the friction from low to high, we observe a dynamical phase transition from a circulating flow phase to an anisotropic flow phase in which the flow tends to align perpendicular to the nematic director at the boundary. We demonstrate that both the flow structure and dynamic correlations in the latter phase differ from those of an unconfined, active turbulent system and may be controlled by the prescribed nematic boundary conditions. Here, our results show that substrate friction and geometric confinement act as valuable control parameters in active nematics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2019

GaN/AlGaN Avalanche Photodiode Detectors for High Performance Ultraviolet Sensing Applications

The shorter wavelengths of the ultraviolet (UV) band enable detectors to operate with increased spatial resolution, variable pixel sizes, and large format arrays, benefitting a variety of NASA, defense, and commercial applications. AlxGa1-xN semiconductor alloys, which have attracted much interest for detection in the UV spectral region, have been shown to enable high optical gains, high sensitivities with the potential for single photon detection, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs with large pixel sizes that demonstrate consistent and uniform device performance and operation. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized material growth and doping parameters. The use of these low defect density substrates is a critical element to realizing highly sensitive UV-APDs and arrays with suppressed dark current under high electric fields.Optical gains greater than 5X10 (exp 6) with enhanced quantum efficiencies over the 350-400 nm spectral range have been demonstrated, enabled by a strong avalanche multiplication process. Furthermore, we are developing 6X6 arrays of devices to test high gain UV-APD array performance at ~355 nm. These variable-area GaN/AlGaN UV-APD detectors and arrays enable advanced sensing performance over UV bands of interest with high resolution detection for NASA Earth Science applications.

Sood, Ashok K.↗