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Progress of 2-micron Detectors for Application to Lidar Remote Sensing

AlGaAsSb/InGaAsSb heterojunction phototransistors were developed at Astropower, Inc under Laser Risk Reduction Program (LRRP) for operation in the 2-micron region. These phototransistors were optimized for 2-micron detection and have high quantum efficiency (>60%), high gain (>10(exp 3)) and low noise-equivalent- power (<5x10(exp -14) W/Hz), while operating at low bias voltage. One of these phototransistors was tested in lidar mode using the 2-micron CO2 Differential Absorption Lidar (DIAL) system currently under development under the Instrument Incubator Program (IIP) at NASA Langley. Lidar measurements included detecting atmospheric structures consisting of thin clouds in the mid-altitude and near-field boundary layer. These test results are very promising for the application of phototransistors for the two-micron lidar remote sensing. In addition, HgCdTe avalanche photodiodes (APD) acquired from Raytheon were used in atmospheric testing at 2-microns. A discussion of these measurements is also presented in this paper.

Abedin, M. N.↗

Development and Evaluation of a High Sensitivity DIAL System for Profiling Atmospheric CO2

A ground-based 2-micron Differential Absorption Lidar (DIAL) CO2 profiling system for atmospheric boundary layer studies and validation of space-based CO2 sensors is being developed and tested at NASA Langley Research Center as part of the NASA Instrument Incubator Program. To capture the variability of CO2 in the lower troposphere a precision of 1-2 ppm of CO2 (less than 0.5%) with 0.5 to 1 km vertical resolution from near surface to free troposphere (4-5 km) is one of the goals of this program. In addition, a 1% (3 ppm) absolute accuracy with a 1 km resolution over 0.5 km to free troposphere (4-5 km) is also a goal of the program. This DIAL system leverages 2-micron laser technology developed under NASA's Laser Risk Reduction Program (LRRP) and other NASA programs to develop new solid-state laser technology that provides high pulse energy, tunable, wavelength-stabilized, and double-pulsed lasers that are operable over pre-selected temperature insensitive strong CO2 absorption lines suitable for profiling of lower tropospheric CO2. It also incorporates new high quantum efficiency, high gain, and relatively low noise phototransistors, and a new receiver/signal processor system to achieve high precision DIAL measurements. This presentation describes the capabilities of this system for atmospheric CO2 and aerosol profiling. Examples of atmospheric measurements in the lidar and DIAL mode will be presented.

Ismail, Syed↗

(55)Fe X-ray Response of HgCdTe NIR Detector Arrays

Conversion gain is a fundamental parameter in detector characteristics that is used to measure many identifying detector properties, including read noise, dark current, and quantum efficiency (QE). Charge coupling effects, such as inter-pixel capacitance, attenuate photon shot noise and result in an overestimation of of conversion gain when implementing the photon transfer technique. The (55)Fe X-ray technique is a direct and simple method by which to measure the conversion gain by comparing the observed instrumental counts (ADU) to the known charge (e-) liberated by a single X-ray photon. Here we present the calibrated pair production energy for 1.7 micron HgCdTe infrared detectors.

Fox, Ori↗

Improved Starting Materials for Back-Illuminated Imagers

An improved type of starting materials for the fabrication of silicon-based imaging integrated circuits that include back-illuminated photodetectors has been conceived, and a process for making these starting materials is undergoing development. These materials are intended to enable reductions in dark currents and increases in quantum efficiencies, relative to those of comparable imagers made from prior silicon-on-insulator (SOI) starting materials. Some background information is prerequisite to a meaningful description of the improved starting materials and process. A prior SOI starting material, depicted in the upper part the figure, includes: a) A device layer on the front side, typically between 2 and 20 m thick, made of p-doped silicon (that is, silicon lightly doped with an electron acceptor, which is typically boron); b) A buried oxide (BOX) layer (that is, a buried layer of oxidized silicon) between 0.2 and 0.5 m thick; and c) A silicon handle layer (also known as a handle wafer) on the back side, between about 600 and 650 m thick. After fabrication of the imager circuitry in and on the device layer, the handle wafer is etched away, the BOX layer acting as an etch stop. In subsequent operation of the imager, light enters from the back, through the BOX layer. The advantages of back illumination over front illumination have been discussed in prior NASA Tech Briefs articles.

Pain, Bedabrata↗

Demonstration of the First 4H-SiC EUV Detector with Large Detection Area

Ultraviolet (UV) and Extreme Ultraviolet (EUV) detectors are very attractive in astronomy, photolithography and biochemical applications. For EUV applications, most of the semiconductor detectors based on PN or PIN structures suffer from the very short penetration depth. Most of the carries are absorbed at the surface and recombined there due to the high surface recombination before reach the depletion region, resulting very low quantum efficiency. On the other hand, for Schottky structures, the active region starts from the surface and carriers generated from the surface can be efficiently collected. 4H-Sic has a bandgap of 3.26eV and is immune to visible light background noise. Also, 4H-Sic detectors usually have very good radiation hardness and very low noise, which is very important for space applications where the signal is very weak. The E W photodiodes presented in this paper are based on Schottky structures. Platinum (Pt) and Nickel (Ni) are selected as the Schottky contact metals, which have the highest electron work functions (5.65eV and 5.15eV, respectively) among all the known metals on 4H-Sic.

Xin, Xiaobin↗

NASA Tech Briefs, May 2007

Topics include: Noise-Canceling Helmet Audio System; Program Analyzes Spacecraft/Ground Radio Links; Two-Way Communication Using RFID Equipment and Techniques; Six-Message Electromechanical Display System; Scanning Terahertz Heterodyne Imaging Systems; Master Clock and Time-Signal-Distribution System; Synchronous Phase-Resolving Flash Range Imaging; Integrated Radial Probe Transition From MMIC to Waveguide; Bar-Code System for a Microbiological Laboratory; MMIC Amplifier Produces Gain of 10 dB at 235 GHz; Mapping Nearby Terrain in 3D by Use of a Grid of Laser Spots; Digital Beam Deflectors Based Partly on Liquid Crystals; Narrow-Band WGM Optical Filters With Tunable FSRs; Better Finite-Element Analysis of Composite Shell Structures; Computing Spacecraft-Pointing Vectors for Limb Tracking; Enhanced Master Controller Unit Tester; Rover Graphical Simulator; Increasing Durability of Flame-Sprayed Strain Gauges; Multifunctional, High-Temperature Nanocomposites; Multilayer Impregnated Fibrous Thermal Insulation Tiles; Radiation-Shielding Polymer/Soil Composites; Film/Adhesive Processing Module for Fiber-Placement Processing of Composites; Fabrication of Submillimeter Axisymmetric Optical Components; Electrochemical Disposal of Hydrazines in Water; Statistical Model of Evaporating Multicomponent Fuel Drops; Resistively Heated SiC Nozzle for Generating Molecular Beams; Compact Packaging of Photonic Millimeter-Wave Receiver; Diffractive Combiner of Single-Mode Pump Laser-Diode Beams; Wide-Band, High-Quantum-Efficiency Photodetector; A Robustly Stabilizing Model Predictive Control Algorithm; Modeling Evaporation of Drops of Different Kerosenes; Development of Vapor-Phase Catalytic Ammonia Removal System; Several Developments in Space Tethers; Design Concept for a Nuclear Reactor-Powered Mars Rover; Formation-Initialization Algorithm for N Spacecraft; and DNSs of Multicomponent Gaseous and Drop-Laden Mixing Layers Achieving Transition to Turbulence.

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Increasing Linear Dynamic Range of a CMOS Image Sensor

A generic design and a corresponding operating sequence have been developed for increasing the linear-response dynamic range of a complementary metal oxide/semiconductor (CMOS) image sensor. The design provides for linear calibrated dual-gain pixels that operate at high gain at a low signal level and at low gain at a signal level above a preset threshold. Unlike most prior designs for increasing dynamic range of an image sensor, this design does not entail any increase in noise (including fixed-pattern noise), decrease in responsivity or linearity, or degradation of photometric calibration. The figure is a simplified schematic diagram showing the circuit of one pixel and pertinent parts of its column readout circuitry. The conventional part of the pixel circuit includes a photodiode having a small capacitance, CD. The unconventional part includes an additional larger capacitance, CL, that can be connected to the photodiode via a transfer gate controlled in part by a latch. In the high-gain mode, the signal labeled TSR in the figure is held low through the latch, which also helps to adapt the gain on a pixel-by-pixel basis. Light must be coupled to the pixel through a microlens or by back illumination in order to obtain a high effective fill factor; this is necessary to ensure high quantum efficiency, a loss of which would minimize the efficacy of the dynamic- range-enhancement scheme. Once the level of illumination of the pixel exceeds the threshold, TSR is turned on, causing the transfer gate to conduct, thereby adding CL to the pixel capacitance. The added capacitance reduces the conversion gain, and increases the pixel electron-handling capacity, thereby providing an extension of the dynamic range. By use of an array of comparators also at the bottom of the column, photocharge voltages on sampling capacitors in each column are compared with a reference voltage to determine whether it is necessary to switch from the high-gain to the low-gain mode. Depending upon the built-in offset in each pixel and in each comparator, the point at which the gain change occurs will be different, adding gain-dependent fixed pattern noise in each pixel. The offset, and hence the fixed pattern noise, is eliminated by sampling the pixel readout charge four times by use of four capacitors (instead of two such capacitors as in conventional design) connected to the bottom of the column via electronic switches SHS1, SHR1, SHS2, and SHR2, respectively, corresponding to high and low values of the signals TSR and RST. The samples are combined in an appropriate fashion to cancel offset-induced errors, and provide spurious-free imaging with extended dynamic range.

Pain, Bedabrata↗

MKID Structures for Sub-millimeter Astronomy

Of the high performance detector technologies currently being developed, Microwave Kinetic Inductance Detectors (MKIDs) have the greatest promise for scaling to very large arrays (approx.10(exp 5) detectors). Such arrays can provide high quantum efficiency, and can be designed to provide background limited performance over a wide range of incident powers, making them candidates for a wide range of instruments, ranging from suborbital imagers to spaceborne spectrometers. We are extending Microwave Kinetic Inductance Detectors (MKIDs) technology to the 40 - 400 microns spectral regions via a novel detector concept. In this approach thin film superconducting microstrip lines are used to simultaneously absorb and readout the incident signal with high inter-pixel isolation. Progress on these fabrication and test efforts will be presented.

Wollack, Edward↗

Silicon Photo-Multiplier Readouts for Scintillators in High-Energy Astronomy

New scintillator materials have recently been shown to hold great potential for low-cost, reliable gamma-ray detectors in high-energy astronomy. New devices for the detection of scintillation light promise to make scintillator-based instruments even more attractive by reducing mass and power requirements,in particular, silicon photo-multipliers (SiPMs) are starting to become commercially available that offer gains and quantum efficiencies similar to those of photo-multiplier tubes (PMTs), but with greatly reduced mass, high ruggedness, low voltage requirements, and no sensitivity to magnetic fields. We have conducted laboratory tests of a sample of commercially available SiPMs coupled to LaBr3;Ce, a scintillator of relevance to to future high-energy astrophysics missions. We present results for gamma-ray spectroscopy. compare the SiPM performance to that of a PMT, and discuss the extent to which SiPMs offer significant advantages for scintillator-based space missions.

Bloser, Peter F.↗

Optimization of Noise Performance of Low-Back Ground Detector Arrays

The performance of the 2k x 2k Teledyne H2RG detectors is key to the success of the JWST mission. For broadband imaging, where background limited sensitivity is quickly reached, the key parameter is the quantum efficiency of the detectors, which is, in general, very good. For near infrared spectroscopy and narrow band imaging, we cannot generally reach the back-round limit, so instrument sensitivity is directly dependent on the read noise of the detector. We have initiated a program to analyze the noise characteristics of the H2RG detectors, studying the correlations among the detector outputs and with the reference output, as well as the temporal correlations in a given detector section. Lasing the measured characteristics of the noise correlations, we can determine the optimal coefficients for the removal of correlated noise as a function of frequency. By using available reference sources and adding more frequent references, we have been able to reduce the noise by a factor of two. We find that the detectors have significantly lower noise that observed in prior tests, and can offer significant improvements in the performance of the JWST instruments. We will present the analysis and mitigation techniques, discuss prospects for further improvements with existing detectors, and describe considerations for improvements in next-generation detectors.

Rauscher, Bernard J.↗

Submonolayer Quantum Dot Infrared Photodetector

A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

Ting, David Z.↗

The Effect of Photon Source on Heterogeneous Photocatalytic Oxidation of Ethanol by a Silica-Titania Composite

The objective of this study was to distinguish the effect of photon flux (i.e., photons per unit time reaching a surface) from that of photon energy (i.e., wavelength) of a photon source on the silica-titania composite (STC)-catalyzed degradation of ethanol in the gas phase. Experiments were conducted in a bench-scale annular reactor packed with STC pellets and irradiated with either a UV-A fluorescent black light blue lamp ((gamma)max=365 nm) at its maximum light intensity or a UV-C germicidal lamp ((gamma)max=254 nm) at three levels of light intensity. The STC-catalyzed oxidation of ethanol was found to follow zero-order kinetics with respect to CO2 production, regardless of the photon source. Increased photon flux led to increased EtOH removal, mineralization, and oxidation rate accompanied by lower intermediate concentration in the effluent. The oxidation rate was higher in the reactor irradiated by UV-C than by UV-A (38.4 vs. 31.9 nM/s) at the same photon flux, with similar trends for mineralization (53.9 vs. 43.4%) and reaction quantum efficiency (i.e., photonic efficiency, 63.3 vs. 50.1 nmol CO2 (mu)mol/photons). UV-C irradiation also led to decreased intermediate concentration in the effluent . compared to UV-A irradiation. These results demonstrated that STC-catalyzed oxidation is enhanced by both increased photon flux and photon energy.

Coutts, Janelle L.↗

Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would be fabricated separately.

Zheng, Xinyu↗

Chemical Thinning Process for Fabricating UV-Imaging CCDs

The thinning stage of the postfabrication process reported in the immediately preceding article is notable in its own right. Although the thinning process was described in the preceding article as part of an overall process of fabrication of a supported charge-coupled device (CCD), it is more generally applicable to both free-standing and supported devices that have been fabricated in die and wafer formats. Like the thermocompression bonding process described in the preceding article, the thinning process is compatible with CCD-fabrication processes, as well as postfabrication processes that enhance the response of CCDs to ultraviolet (UV) light, including the delta-doping process. CCDs that are thinned by this process and then delta-doped exhibit high quantum efficiencies that are stable with time and with exposure to the environment.

Jones, TOdd↗

Fabrication of Robust, Flat, Thinned, UV-Imaging CCDs

An improved process that includes a high-temperature bonding subprocess has been developed to enable the fabrication of robust, flat, silicon-based charge-coupled devices (CCDs) for imaging in ultraviolet (UV) light and/or for detecting low-energy charged particles. The CCDs in question are devices on which CCD circuitry has already been formed and have been thinned for backsurface illumination. These CCDs may be delta doped, and aspects of this type of CCD have been described in several prior articles in NASA Tech Briefs. Unlike prior low-temperature bonding subprocesses based on the use of epoxies or waxes, the high-temperature bonding subprocess is compatible with the deltadoping process as well as with other CCD-fabrication processes. The present improved process and its bonding, thinning, and delta-doping subprocesses, are characterized as postfabrication processes because they are undertaken after the fabrication of CCD circuitry on the front side of a full-thickness silicon substrate. In a typical case, it is necessary to reduce the thickness of the CCD to between 10 and 20 m in order to take advantage of back-side illumination and in order to perform delta doping and/or other back-side treatment to enhance the quantum efficiency. In the prior approach to the fabrication of back-side-illuminated CCDs, the thinning subprocess turned each CCD into a free-standing membrane that was fragile and tended to become wrinkled. In the present improved process, prior to thinning and delta doping, a CCD is bonded on its front side to a silicon substrate that has been prefabricated to include cutouts to accommodate subsequent electrical connections to bonding pads on the CCD circuitry. The substrate provides structural support to increase ruggedness and maintain flatness. At the beginning of this process, the back side of a CCD as fabricated on a full-thickness substrate is polished. Silicon nitride is deposited on the back side, opposite the bonding pads on the front side, in order to define a relatively thick frame. The portion of the CCD not covered by the frame is the portion to be thinned by etching.

Grunthaner, Paula↗

Using Correlated Photons to Suppress Background Noise

A proposed method of suppressing the effect of background noise in an optical communication system would exploit the transmission and reception of correlated photons at the receiver. The method would not afford any advantage in a system in which performance is limited by shot noise. However, if the performance of the system is limited by background noise (e.g., sunlight in the case of a free-space optical communication system or incoherently scattered in-band photons in the case of a fiber-optic communication system), then the proposed method could offer an advantage: the proposed method would make it possible to achieve a signal-to-noise ratio (S/N) significantly greater than that of an otherwise equivalent background- noise-limited optical communication system based on the classical transmission and reception of uncorrelated photons. The figure schematically depicts a classical optical-communication system and a system according to the proposed method. In the classical system, a modulated laser beam is transmitted along an optical path to a receiver, the optics of which include a narrow-band-pass filter that suppresses some of the background noise. A photodetector in the receiver detects the laser-beam and background photons, most or all of which are uncorrelated. In the proposed system, correlated photons would be generated at the transmitter by making a modulated laser beam pass through a nonlinear parametric down-conversion crystal. The sum of frequencies of the correlated photons in each pair would equal the frequency of the incident photon from which they were generated. As in the classical system, the correlated photons would travel along an optical path to a receiver, where they would be band-pass filtered and detected. Unlike in the classical system, the photodetector in the receiver in this system would be one that intrinsically favors the detection of pairs of correlated photons over the detection of uncorrelated photons. Even though there would be no way of knowing the precise location and time of creation of a given pair of correlated signal photons in the nonlinear down-conversion crystal, the fact that the photons are necessarily created at the same time and place makes it possible to utilize conventional geometrical imaging optics to reunite the photons in coincidence in the receiving photodetector. Because most or all of the signal photons would be correlated while most or all of the noise photons would be uncorrelated, the S/N would be correspondingly enhanced in the photodetector output. An additional advantage to be gained by use of a correlated-photon detector is that it could be capable of recovering the signal even in the presence of background light so bright that a classical uncorrelated-photon detector would be saturated. A blocked-impurity-band (BIB) photodetector that preferentially detects pairs of correlated photons over uncorrelated ones and that operates at a quantum efficiency of 88 percent is commercially available. This detector must be cooled to the temperature of liquid helium to obtain the desired low-noise performance. It is planned to use this detector in a proof-of-principle demonstration. In addition, it may be possible to develop GaN-based photodetectors that could offer the desired low-noise performance at room temperature.

Jackson, Deborah↗

Detection and Correction of Step Discontinuities in Kepler Flux Time Series

PDC 8.0 includes an implementation of a new algorithm to detect and correct step discontinuities appearing in roughly one of every 20 stellar light curves during a given quarter. The majority of such discontinuities are believed to result from high-energy particles (either cosmic or solar in origin) striking the photometer and causing permanent local changes (typically -0.5%) in quantum efficiency, though a partial exponential recovery is often observed [1]. Since these features, dubbed sudden pixel sensitivity dropouts (SPSDs), are uncorrelated across targets they cannot be properly accounted for by the current detrending algorithm. PDC detrending is based on the assumption that features in flux time series are due either to intrinsic stellar phenomena or to systematic errors and that systematics will exhibit measurable correlations across targets. SPSD events violate these assumptions and their successful removal not only rectifies the flux values of affected targets, but demonstrably improves the overall performance of PDC detrending [1].

Kolodziejczak, J. J.↗