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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 649 records · Page 36
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Studying Near-Surface Layers of Germanium Implanted with Cobalt Ions

Results of an investigation of the surface of germanium nanostructured by means of ion implantation are presented. Single-crystalline germanium (c-Ge) plates were irradiated by 40-keV cobalt Co{sup +} ions in a dose range of (2–8) × 10{sup 16} ion/cm{sup 2}. Evolution of the germanium surface morphology with increasing ion dose was studied by method of scanning electron microscopy. It is established that an increase in the ion implantation dose is accompanied by gradual formation of a surface layer consisting of spherical particles with diameters of ~150 nm. Analysis of the X-ray diffraction patterns of samples was indicative of the appearance of nanosized cobalt germanide (CoGe) particles in the ion-implanted surface layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Water-assisted pulsed Er:YAG laser interaction with silicon

Silicon is virtually transparent to the Er:YAG laser with a wavelength of 2.94 μm. In this study, we report that moderately doped silicon (1–10 Ω cm) can be processed by a pulsed Er:YAG laser with a pulse duration of 350 μs and a peak laser intensity of 1.7 × 10{sup 5} W/cm{sup 2} by applying a thin water layer on top of silicon as a light absorbing medium. In this way, water is heated first by strongly absorbing the laser energy and then heats up the silicon wafer indirectly. As the silicon temperature rises, the free carrier concentration and therefore the absorption coefficient of silicon will increase significantly, which may enable the silicon to get directly processed by the Er:YAG laser when the water is vaporized completely. We also believe that the change in surface morphology after melting could contribute to the increase in the laser beam absorptance. It was observed that 525 nm-thick p-type wafer specimens were fully penetrated after 15 laser pulses were irradiated. Bright yellow flames were observed during the process, which indicates that the silicon surface reached the melting point.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Concurrent Amorphization and Nanocatalyst Formation in Cu‐Substituted Perovskite Oxide Surface: Effects on Oxygen Reduction Reaction at Elevated Temperatures

Abstract The activity and durability of chemical/electrochemical catalysts are significantly influenced by their surface environments, highlighting the importance of thoroughly examining the catalyst surface. Here, Cu‐substituted La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3‐δ is selected, a state‐of‐the‐art material for oxygen reduction reaction (ORR), to explore the real‐time evolution of surface morphology and chemistry under a reducing atmosphere at elevated temperatures. Remarkably, in a pioneering observation, it is discovered that the perovskite surface starts to amorphize at an unusually low temperature of approximately 100 °C and multicomponent metal nanocatalysts additionally form on the amorphous surface as the temperature raises to 400 °C. Moreover, this investigation into the stability of the resulting amorphous layer under oxidizing conditions reveals that the amorphous structure can withstand a high‐temperature oxidizing atmosphere (≥650 °C) only when it has undergone sufficient reduction for an extended period. Therefore, the coexistence of the active nanocatalysts and defective amorphous surface leads to a nearly 100% enhancement in the electrode resistance for the ORR over 200 h without significant degradation. These observations provide a new catalytic design strategy for using redox‐dynamic perovskite oxide host materials.

Jeon, SungHyun↗
DOE OSTI2014

Photoconductivity in reactively evaporated copper indium selenide thin films

Copper indium selenide thin films of composition CuInSe{sub 2} with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10{sup −5} mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe{sub 2} films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (α) of 10{sup 6} cm{sup −1} at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe{sub 2} thin films indicate its suitability in photovoltaic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2016

The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures

Yellow and green emitting multiple quantum well structures are grown on nanostripe templates with {10-11} facets. SEM and cathodoluminescence measurements show a correlation between rough surface morphology near the bottom of the stripes and non-radiative recombination centers. Transmission electron microscopy (TEM) analysis shows that these surface instabilities are a result of stacking faults generated from the quantum well (QW) regions near the bottom of the pyramid that propagate to the surface. HRTEM images show that the stacking faults are I{sub 1} type which is formed by removal of one half basal plane to relieve the compressive strain in the InGaN QW. Thicker QWs near the bottom as a result of growth rate enhancement due to the surface diffusion of the precursors from the mask regions cause increased strain. Additionally, the compressive strain induced by the bending of the nanostructure towards the growth mask further increases the strain experienced by the QW thereby causing the localized defect generation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2012

Oxygen Chemistry on Transition Metals: First-principles DFT and Monte Carlo Studies

Electro-chemical and thermo-chemical processes occurring at multi-phase interfaces are the basis of many devices facilitating conversion between forms of energy including solar, electrical, and chemical in a number of devices from fuel cells to batteries. Large electric fields, high potential bias and inherent inaccessibility of these interfaces to many conventional experimental probes contribute to an absence of fundamental insight into mechanistic behavior of chemical species and interfacial environment. Modern first-principles tools including Density Functional Theory (DFT) can be used to study these interfaces from a first-principles approach and provide insight for molecular transformations. In our studies we also coarse-grain DFT calculations with the Cluster Expansion (CE) and extend quantum-mechanical ab-initio information to larger systems and include environmental factors such as temperature, partial pressure of oxygen, and surface morphology (undercoordinated step and edge sites). We investigate two case studies: recharge cycle of lithium/oxygen batteries and oxygen on a metal surface in ethylene epoxidation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Topographic Characterization of Niobium Films on Copper for SRF Applications

Niobium films on copper substrates are being actively developed as a low-cost alternative to bulk niobium for superconducting radio-frequency (SRF) cavities, offering superior thermal conductivity, reduced material cost, and the potential for scalable cavity fabrication. The performance of such films can be limited by imperfect surfaces that reduce the peak achievable magnetic field. Nb films deposited under varied electron cyclotron resonance conditions were characterized via atomic force microscopy. The films exhibit a corrugated surface morphology which can be characterized by the depth of the corrugation, slope angle, and standard roughness parameters. The influence of this surface roughness on field limitations is examined within the framework of London theory. These measurements and models aid in understanding how ECR deposition conditions influence the nanometer-scale roughness of Nb films on Cu and its impact on high-field SRF cavity performance.

Redman, Brandi [Old Dominion Univ., Norfolk, VA (U↗
DOE OSTI2024

Investigation of Contact Properties and Device Performance for Bifacial Double-Side Textured Silicon Solar Cells With Polysilicon Based Passivating Contacts

We investigate the impact of the surface morphology on the contact properties of phosphorus doped poly-Si layers. If the poly-Si layer on a textured surface remains intact after high-temperature metallization using a fire-through (FT) silver (Ag) paste, the J0,metal is not expected to increase significantly while the specific contact resistivity can improve with a textured surface. The contact properties of the FT Ag contacts to n+ poly-Si deposited on both textured and planar surfaces are investigated by measuring and evaluating ρc and J0,metal. The reasons for differences in contact resistance and recombination are further investigated with SEM imaging. Solar cells with n-type polysilicon based passivating contacts on the rear side are fabricated and characterized. The scientific approach used, and the insights presented in this work, help to understand the mechanisms and behavior of screen-printed and fired-through contacts to polysilicon layers deposited onto textured silicon surfaces.

Padhamnath, Pradeep (ORCID:0000000202510624)↗
NASA NTRS1989

Alkoxysilane adsorption on metal oxide substrates

Reflection-absorption infrared and inelastic electron tunneling spectroscopies have been used to study adsorption of liquid phase mono-, di-, and trialkoxysilanes on evaporated Al and Cu substrates. Spectral evidence shows that substrate properties influence the chemical and physical nature of trialkoxysilane films and that silane functionality plays a role in molecular orientation. Results show that dialkoxysilane films contain structural gradients, with adsorption at the monomolecular level influenced by surface morphology, and with organofunctionality and dosing procedure affecting the formation of thicker films. Evidence is presented that monoalkoxysilanes react with alumina surfaces, and a broad, multipeaked band from 1600 to 1900/cm has been interpreted as characteristic of the silylated AlO(x)Pb interface.

Ramsier, R. D.↗
NASA NTRS1995

Ignition and combustion of bulk metals under elevated, normal and reduced gravity conditions

This research effort is aimed at providing further insight into this multi-variable dependent phenomena by looking at the effects of gravity on the ignition and combustion behavior of metals. Since spacecraft are subjected to higher-than-1g gravity loads during launch and reentry and to zero-gravity environments while in orbit, the study of ignition and combustion of bulk metals at different gravitational potentials is of great practical concern. From the scientific standpoint, studies conducted under microgravity conditions provide simplified boundary conditions since buoyancy is removed, and make possible the identification of fundamental ignition mechanisms. The effect of microgravity on the combustion of bulk metals has been investigated by Steinberg, et al. on a drop tower simulator. However, no detailed quantitative work has been done on ignition phenomena of bulk metals at lower or higher-than-normal gravitational fields or on the combustion characteristics of metals at elevated gravity. The primary objective of this investigation is the development of an experimental system capable of providing fundamental physical and chemical information on the ignition of bulk metals under different gravity levels. The metals used in the study, iron (Fe), titanium (Ti), zirconium (Zr), magnesium (Mg), zinc (Zn), and copper (Cu) were selected because of their importance as elements of structural metals and their simple chemical composition (pure metals instead of multi-component alloys to avoid complication in morphology and spectroscopic studies). These samples were also chosen to study the two different combustion modes experienced by metals: heterogeneous or surface oxidation, and homogeneous or gas-phase reaction. The experimental approach provides surface temperature profiles, spectroscopic measurements, surface morphology, x-ray spectrometry of metals specimens and their combustion products, and high-speed cinematography of the heating, ignition and combustion stages of the metal specimen. This paper summarizes the results obtained to date from experiments conducted under normal and high-gravity conditions.

Abbud-Madrid, Angel↗
DOE OSTI2017

Epitaxial low-temperature growth of In{sub 0.5}Ga{sub 0.5}As films on GaAs(100) and GaAs(111)A substrates using a metamorphic buffer

A complex investigation of epitaxial In{sub 0.5}Ga{sub 0.5}As films grown on GaAs substrates with crystallographic orientations of (100) and (111)A in the standard high- and low-temperature modes has been performed. The parameters of the GaAs substrate and In{sub 0.5}Ga{sub 0.5}As film were matched using the technology of step-graded metamorphic buffer. The electrical and structural characteristics of the grown samples have been studied by the van der Pauw method, atomic force microscopy, scanning electron microscopy, and transmission/ scanning electron microscopy. The surface morphology is found to correlate with the sample growth temperature and doping with silicon. It is revealed that doping of low-temperature In{sub 0.5}Ga{sub 0.5}As layers with silicon significantly reduces both the surface roughness and highly improves the structural quality. Pores 50–100 nm in size are found in the low-temperature samples.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1995

Atomic Oxygen Textured Polymers

Atomic oxygen can be used to microscopically alter the surface morphology of polymeric materials in space or in ground laboratory facilities. For polymeric materials whose sole oxidation products are volatile species, directed atomic oxygen reactions produce surfaces of microscopic cones. However, isotropic atomic oxygen exposure results in polymer surfaces covered with lower aspect ratio sharp-edged craters. Isotropic atomic oxygen plasma exposure of polymers typically causes a significant decrease in water contact angle as well as altered coefficient of static friction. Such surface alterations may be of benefit for industrial and biomedical applications. The results of atomic oxygen plasma exposure of thirty-three (33) different polymers are presented, including typical morphology changes, effects on water contact angle, and coefficient of static friction.

Banks, Bruce A.↗
DOE OSTI2015

Growth of crystalline ZnO films on the nitridated (0001) sapphire surface

The surface morphology and structure of (0001) sapphire substrates subjected to thermochemical nitridation in a mixture of N{sub 2}, CO, and H{sub 2} gases are investigated by electron and probe microscopy and X-ray and electron diffraction. It is shown that an aluminum nitride layer is formed on the substrate surface and heteroepitaxial ZnO films deposited onto such substrates by magnetron sputtering have a higher quality when compared with films grown on sapphire.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

X-ray microstructural analysis of nanocrystalline TiZrN thin films by diffraction pattern modeling

A detailed microstructural characterization of nanocrystalline TiZrN thin films grown at different substrate temperatures (T{sub S}) was carried out by X-ray diffraction (XRD). Total diffraction pattern modeling based on more meaningful microstructural parameters, such as crystallite size distribution and dislocation density, was performed to describe the microstructure of the thin films more precisely. This diffraction modeling has been implemented and used mostly to characterize powders, but the technique can be very useful to study hard thin films by taking certain considerations into account. Nanocrystalline films were grown by using the cathodic pulsed vacuum arc technique on stainless steel 316L substrates, varying the temperature from room temperature to 200 °C. Further surface morphology analysis was performed to study the dependence of grain size on substrate temperature using atomic force microscopy (AFM). The crystallite and surface grain sizes obtained and the high density of dislocations observed indicate that the films underwent nanostructured growth. Variations in these microstructural parameters as a function of T{sub S} during deposition revealed a competition between adatom mobility and desorption processes, resulting in a specific microstructure. These films also showed slight anisotropy in their microstructure, and this was incorporated into the diffraction pattern modeling. The resulting model allowed for the films' microstructure during synthesis to be better understood according to the experimental results obtained. - Highlights: • Mobility and desorption competition generates a critical temperature. • A microstructure anisotropy related to the local strain was observed in thin films. • Adatom mobility and desorption influence grain size and microstrain.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Alluvial fan morphology: A self-similar free boundary problem description

In this work, we examine approximate geometrically self-similar solutions to a parabolic free boundary value problem applied to alluvial fan surface morphology and growth. Alluvial fans are fan- or cone-shaped sedimentary deposits caused by the rapid deposition of sediment from a canyon discharging onto a flatter plain. Longitudinal, topographic profiles of fans can be readily described by a seemingly time independent dimensionless profile (DeChant et al., 1999). However, because an alluvial fan can be expected to grow over time, it is clear that this “steady” profile is certainly time dependent and can be described using a space-time self-similar solution. In an experimental and theory-based study, Guerit et al. (2014) developed a self-similar (or as they describe it a self-affine) linear solution based upon an approximate first order small parameter expansion solution for a 1-d homogeneous nonlinear diffusion equation. Direct substitution of this result into a linear diffusion equation suggests that this first order expression may not fully satisfy the associated governing equation. In contrast, we develop a more complete solution based upon a modeled approximation for the axi-symmetric formulation such that the associated temporal behavior is consistent with a 1/3 time power-law as described by Reitz and Jerolmack (2014). The resulting expression is an exact solution to a linear heat equation. Furthermore, we emphasize that a small parameter is not inherent to the resulting profile result and is not included in our model development. Though developed using rather different approaches, the formal solution developed here is in good agreement with the simple polynomial described by DeChant et al. (1999) suggesting that this self-similar solution is a suitable time dependent representation of alluvial fan longitudinal profile form and improves on earlier work.

58 GEOSCIENCES↗
DOE OSTI2019

Physical properties of RF magnetron sputtered GaN/n-Si thin film: impacts of RF power

GaN thin film was successfully produced on n-Si(100) substrate by RF magnetron sputter under different RF power. Experimental measurement techniques such as UV/Vis spectroscopy, field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and Micro-Raman Spectroscopy were used to research effects of Radio Frequency power on physical properties of produced thin film. It has been found that produced thin film was polycrystalline structure with (100) and (110) planes of hexagonal GaN from X-ray diffraction measurement result. It also proved that increasing RF power gives rise to deterioration in crystal quality of GaN thin film. Reason of this deterioration was discussed. It has been achieved that increasing RF power has resulted in decreasing optical band gap energy of GaN thin film. Reasons for these changes in optical band gap energy were explained. It was seen that some thin films were grown as layer-plus-island mode (Stranski–Krastanov growth mode) and others were grown as layer-by-layer growth mode (Frank van der Merwe mode) from AFM analysis. It has been found that increasing RF power has resulted in improvement of surface morphology of thin film from field emission scanning electron microscopy analysis. However, reaching RF power to 125 W leads to start to deteriorate of surface of GaN thin film. The reasons for this have been discussed. E{sub 1}(TO) transverse optical phonon mode of hexagonal GaN with different intensity was detected from Micro-Raman Spectroscopy measurement. The reasons for this difference have been discussed. It was concluded that RF power has played a significant role in growing high quality GaN thin film. Morphological, structural, and optical properties of GaN thin film were enhanced by controlling RF power, making them a potential candidate for LED, solar cell, diode application.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

In‐Situ Nanostructuring and Stabilization of Polycrystalline Copper by an Organic Salt Additive Promotes Electrocatalytic CO 2 Reduction to Ethylene

Abstract Bridging homogeneous molecular systems with heterogeneous catalysts is a promising approach for the development of new electrodes, combining the advantages of both approaches. In the context of CO 2 electroreduction, molecular enhancement of planar copper electrodes has enabled promising advancement towards high Faradaic efficiencies for multicarbon products. Besides, nanostructured copper electrodes have also demonstrated enhanced performance at comparatively low overpotentials. Herein, we report a novel and convenient method for nanostructuring copper electrodes using N , N ′‐ethylene‐phenanthrolinium dibromide as molecular additive. Selectivities up to 70 % for C ≥2 products are observed for more than 40 h without significant change in the surface morphology. Mechanistic studies reveal several roles for the organic additive, including: the formation of cube‐like nanostructures by corrosion of the copper surface, the stabilization of these nanostructures during electrocatalysis by formation of a protective organic layer, and the promotion of C ≥2 products.

Thevenon, Arnaud↗