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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 649 records · Page 36
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment

Thin film ferroelectric capacitors (10) comprising a ferroelectric film (18) sandwiched between electrodes (16 and 20) for nonvolatile memory operations are rendered more stable by subjecting the capacitors to an anneal following deposition of the top electrode (20). The anneal is done so as to form the interface (22) between the ferroelectric film and the top electrode. Heating in an air oven, laser annealing, or electron bombardment may be used to form the interface. Heating in an air oven is done at a temperature at least equal to the crystallization temperature of the ferroelectric film. Where the ferroelectric film comprises lead zirconate titanate, annealing is done at about 550.degree. to 600.degree. C. for about 10 to 15 minutes. The formation treatment reduces the magnitude of charge associated with the non-switching pulse in the thin film ferroelectric capacitors. Reduction of this charge leads to significantly more stable nonvolatile memory operations in both digital and analog memory devices. The formation treatment also reduces the ratio of change of the charge associated with the non-switching pulse as a function of retention time. These improved memory devices exhibit greater performance in retention and reduced fatigue in memory arrays.

Thakoor, Sarita↗
DOE OSTI2025

Quantum graph models for transport in filamentary switching

The formation of metallic nanofilaments bridging two electrodes across an insulator is a mechanism for resistive switching. Examples of such phenomena include atomic synapses, which constitute a distinct class of memristive devices the behavior of which is closely tied to the properties of the filament. Until recently, experimental investigation of the low-temperature regime and quantum transport effects has been limited. However, with growing interest in understanding the true impacts of the filament on device conductance, comprehending quantum effects has become crucial for quantum neuromorphic hardware. Here, we discuss quantum transport resulting from filamentary switching in a narrow region where the continuous approximation of the contact is not valid, and only a few atoms are involved. In this scenario, the filament can be represented by a graph depicting the adjacency of atoms and the overlap between atomic orbitals. Using the theory of quantum graphs with locally diffusive node scattering, we calculate the scattering amplitude of charge carriers on this graph and explore the interplay between filamentary formation and quantum transport effects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2017

Low and High-Power Inductive Pulsed Plasma Thruster Development Testing at NASA-MSFC

The inductive pulsed plasma thruster (IPPT) is an electromagnetic plasma accelerator that has been identified in NASA roadmaps as an enabling propulsion technology for some niche low-power missions and for high-power in-space propulsion needs. The IPPT is an electrodeless space propulsion device where a capacitor is charged to an initial voltage and then discharged producing a high current pulse through a coil. The field produced by this pulse ionizes propellant, inductively driving current in a plasma located near the face of the coil. Once the plasma is formed it can be accelerated and expelled at a high exhaust velocity by the electromagnetic Lorentz body force arising from the interaction of the induced plasma current and the magnetic field produced by the current in the coil. Thrusters of this type possess many demonstrated and potential benefits that make them worthy of continued investigation. The electrodeless nature of these thrusters eliminates the lifetime and contamination issues associated with electrode erosion in conventional electric thrusters. Also, a wider variety of propellants are accessible when compatibility with metallic electrodes in no longer an issue. IPPTs have been successfully operated using propellants like ammonia, hydrazine, and CO2, and there is no fundamental reason why they would not operate on other in situ propellants like H2O. It is well-known that pulsed accelerators can maintain constant specific impulse (I(sub sp)) and thrust efficiency (eta(sub t)) over a wide range of input power levels by adjusting the pulse rate to hold the discharge energy per pulse constant. It has also been demonstrated that an inductive pulsed plasma thruster can operate in a regime where eta(sub t) is relatively constant over a wide range of I(sub sp) values (3000-8000 s). Finally, thrusters in this class have operated in single-pulse mode at high energy per pulse, and by increasing the pulse rate they offer the potential to process very high levels of power using a single thruster. There has been significant previous research on IPPTs designed around a planar-coil (flat-plate) geometry. The most notable of these was the Pulsed Inductive Thruster (PIT), with the PIT MkV presently representing the state-of- the-art in pulsed high-power IPPT technological development. In this paper, we focus on two planar-geometry devices that operate at significantly different power levels. Most work performed at NASA-Marshall Space Flight Center (MSFC) has, to date, focused on lower power thruster operation (approx. = 10s to 100s of J/pulse, up to 2-2.5 kW average power throughput) and previously described. The most recent work aimed to assemble a device that could be tested in cyclic mode on a thrust-stand, and which could augment the existing data set for IPPTs. In addition, the thruster was designed to serve as a test-bed for solid state switching circuitry and pulsed gas valves, with the modular design of the device allowing for variation in or upgrades to test configuration. Recently, MSFC obtained on loan from the Georgia Institute of Technology (Atlanta, GA) the PIT MkVI, successor to the PIT MkV. The MkV and MkVI are similar in design with much of the hardware from the former, specifically the capacitors and spark-gap switches, being reused in the latter. The coil is similar in geometry but has bent copper rods used in the latest iteration in place of the Litz wire windings found in the MkV. The MkVI master switch for the spark gaps is located in the vacuum chamber contained within a sealed, pressurized vessel fastened to the back of the thruster. This is different from the MkV where many capacitor charging lines and spark gap-triggering delay lines ran to the thruster from a master trigger located outside the vacuum chamber. The MkVI was damaged during testing soon after its fabrication was completed. The thruster arrived at MSFC still-damaged and mostly disassembled into many individual pieces. The device has been repaired, with a few additional design changes implemented after discussions with the late Prof. Lovberg regarding the initial testing results and issues encountered. In the present work, we present results from testing of both the small IPPT and the larger MkVI thruster. The smaller device (Fig. 1) is tested on a thrust stand on multiple gases to demonstrate its capability to operate in a repetition-rate mode and serve as a IPPT technology-development testbed. The larger MkVI (Fig. 2) is operated for the first time in its newly reconstituted state, demonstrating full-power pulsed operation and, for the first time, repetition-rate operation of a high-power IPPT. The additional upgrades required for synchronous operation of all the pulsed systems in single-pulse and repetition-rate mode are described in detail.

Polzin, Kurt A.↗
NASA NTRS2018

Inductive Pulsed Plasma Thruster Development Testing at NASA-MSFC

The inductive pulsed plasma thruster (IPPT) is an electromagnetic plasma accelerator that has been identified in NASA roadmaps as an enabling propulsion technology for some niche low-power missions and for high-power in-space propulsion needs. The IPPT is an electrodeless space propulsion device where a capacitor is charged to an initial voltage and then discharged producing a high current pulse through a coil. The field produced by this pulse ionizes propellant, inductively driving current in a plasma located near the face of the coil. Once the plasma is formed it can be accelerated and expelled at a high exhaust velocity by the electromagnetic Lorentz body force arising from the interaction of the induced plasma current and the magnetic field produced by the current in the coil. Thrusters of this type possess many demonstrated and potential benefits that make them worthy of continued investigation. The electrodeless nature of these thrusters eliminates the lifetime and contamination issues associated with electrode erosion in conventional electric thrusters. Also, a wider variety of propellants are accessible when compatibility with metallic electrodes in no longer an issue. IPPTs have been successfully operated using propellants like ammonia, hydrazine, and CO2, and there is no fundamental reason why they would not operate on other in situ propellants like H2O. It is well-known that pulsed accelerators can maintain constant specific impulse (I(sub sp)) and thrust efficiency (η(sub t)) over a wide range of input power levels by adjusting the pulse rate to hold the discharge energy per pulse constant. It has also been demonstrated that an inductive pulsed plasma thruster can operate in a regime where η(sub t) is relatively constant over a wide range of I(sub sp) values (3000-8000 s). Finally, thrusters in this class have operated in single-pulse mode at high energy per pulse, and by increasing the pulse rate they offer the potential to process very high levels of power using a single thruster. There has been significant previous research on IPPTs designed around a planar-coil (flat-plate) geometry. The most notable of these was the Pulsed Inductive Thruster (PIT), with the PIT MkV presently representing the state of- the-art in pulsed high-power IPPT technological development. In this paper, we focus on two planar-geometry devices that operate at significantly different power levels. Most work performed at NASA-Marshall Space Flight Center (MSFC) has, to date, focused on lower power thruster operation (≈ 10s to 100s of J/pulse, up to 2-2.5 kW average power throughput) and previously described in Refs. [5,6]. The most recent work aimed to assemble a device that could be tested in cyclic mode on a thrust-stand, and which could augment the existing data set for IPPTs. In addition, the thruster was designed to serve as a test-bed for solid state switching circuitry and pulsed gas valves, with the modular design of the device allowing for variation in or upgrades to test configuration. Recently, MSFC obtained on loan from the Georgia Institute of Technology (Atlanta, GA) the PIT MkVI, successor to the PIT MkV. The MkV and MkVI are similar in design with much of the hardware from the former, specifically the capacitors and spark-gap switches, being reused in the latter. The coil is simliar in geometry but has bent copper rods used in the latest iteration in place of the Litz wire windings found in the MkV. The MkVI master switch for the spark gaps is located in the vacuum chamber contained within a sealed, pressurized vessel fastened to the back of the thruster. This is different from the MkV where many capacitor charging lines and spark gap-triggering delay lines ran to the thruster from a master trigger located outside the vacuum chamber. The MkVI was damaged during testing soon after its fabrication was completed. The thruster arrived at MSFC still-damaged and mostly disassembled into many individual pieces. The device has been repaired, with a few additional design changes implemented after discussions with the late Prof. Lovberg regarding the initial testing results and issues encountered.

Polzin, Kurt A.↗
DOE OSTI2023

Single-shot switching in Tb/Co-multilayer based nanoscale magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal of the magnetization by an ultrashort laser pulse is extremely important. Here we demonstrate single-shot switching of Tb/Co-multilayer based nanoscale MTJs by combining the optical writing and the electrical read-out methods. A 90-fs-long laser pulse switches the magnetization of the storage layer (SL). The change in the tunneling magnetoresistance (TMR) between the SL and a reference layer (RL) is probed electrically across the oxide barrier. Single-shot switching is demonstrated by varying the cell diameter from 300 nm to 20 nm. The anisotropy, magnetostatic coupling, and switching probability exhibit cell-size dependence. By suitable association of laser fluence and magnetic field, successive commutation between high-resistance and low-resistance states is achieved. The nature of the magnetization reversal of both SL and RL in a continuous film is probed with a depth-resolved magneto-optical Kerr effect (MOKE) magnetometry. The ultrafast dynamics in the continuous full-MTJ stack is investigated with the time-resolved pump–probe technique. Our experimental findings provide strong support for the growing interest in ultrafast spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Third harmonic characterization of antiferromagnetic heterostructures

Abstract Electrical switching of antiferromagnets is an exciting recent development in spintronics, which promises active antiferromagnetic devices with high speed and low energy cost. In this emerging field, there is an active debate about the mechanisms of current-driven switching of antiferromagnets. For heavy-metal/ferromagnet systems, harmonic characterization is a powerful tool to quantify current-induced spin-orbit torques and spin Seebeck effect and elucidate current-induced switching. However, harmonic measurement of spin-orbit torques has never been verified in antiferromagnetic heterostructures. Here, we report harmonic measurements in Pt/ α -Fe 2 O 3 bilayers, which are explained by our modeling of higher-order harmonic voltages. As compared with ferromagnetic heterostructures where all current-induced effects appear in the second harmonic signals, the damping-like torque and thermally-induced magnetoelastic effect contributions in Pt/ α -Fe 2 O 3 emerge in the third harmonic voltage. Our results provide a new path to probe the current-induced magnetization dynamics in antiferromagnets, promoting the application of antiferromagnetic spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Wind Supply Chain Security: Hardware Enumeration and Analysis

This project, undertaken by Idaho National Laboratory (INL) for the Department of Energy (DOE) Wind Energy Technologies Office (WETO), focused on the enumeration and analysis of six key devices important to wind technologies. The devices analyzed included Beckhoff Bus Terminal Controllers (BK1120 and BC9000), a Beckhoff Economy Built-in Panel PC (CP6231), an N-Tron Managed Industrial Ethernet Switch (711FX3), a Bachmann M1 Gateway, and a Bachmann Smart Power Plant Controller. Device selection was driven by availability and budget constraints, with several components sourced from existing wind farms and others procured through a co-agreement with another WETO-funded project. The project's primary objective was to create a hardware bill of materials (HBOM) for each device, identifying and documenting all components to assess potential security and supply chain risks. A detailed analysis revealed over 750 unique components across the six devices, with 80% successfully identified and accompanied by datasheets. Notably, Texas Instruments emerged as the leading supplier, providing over 16% of the components, followed by ON Semiconductor at 11.3%, Analog Devices at 5.3%, and Renesas Electronics Corp at 4.1%. Other notable vendors included Toshiba Corporation, iC-Haus Corporation, Atmel, Vishay, and STMicroelectronics. The enumeration process involved thorough documentation of each component, including its designation, quantity, identifiers, pin package, description, vendor, model, and country of origin. This process provided valuable insights into the complexity and diversity of the electronic systems within these wind devices. It also highlighted the distinct separation of components between vendors, suggesting a trend of vendor-specific component usage. Key findings from the project emphasized the importance of broadening the scope of vendor analysis in future research to gain a comprehensive understanding of component distribution and commonality. The identification of vendor-specific component usage patterns offers new avenues for research and underscores the significance of continued investigation in this field. Overall, this project provides critical insights into the component composition of wind devices, aiding in the development of improved supply chain management and component sourcing strategies. The results contribute valuable knowledge to the wind technology sector, laying the groundwork for enhanced security and resilience in wind energy systems.

17 - WIND ENERGY↗
DOE OSTI2022

Transmission Electron Microscopy Study on the Effect of Thermal and Electrical Stimuli on Ge2Te3 Based Memristor Devices

Memristor devices fabricated using the chalcogenide Ge 2 Te 3 phase change thin films in a metal-insulator-metal structure are characterized using thermal and electrical stimuli in this study. Once the thermal and electrical stimuli are applied, cross-sectional transmission electron microscopy (TEM) and X-ray energy-dispersive spectroscopy (XEDS) analyses are performed to determine structural and compositional changes in the devices. Electrical measurements on these devices showed a need for increasing compliance current between cycles to initiate switching from low resistance state (LRS) to high resistance state (HRS). The measured resistance in HRS also exhibited a steady decrease with increase in the compliance current. High resolution TEM studies on devices in HRS showed the presence of residual crystalline phase at the top-electrode/dielectric interface, which may explain the observed dependence on compliance current. XEDS study revealed diffusion related processes at dielectric-electrode interface characterized, by the separation of Ge 2 Te 3 into Ge- and Te- enriched interfacial layers. This was also accompanied by spikes in O level at these regions. Furthermore, in-situ heating experiments on as-grown thin films revealed a deleterious effect of Ti adhesive layer, wherein the in-diffusion of Ti leads to further degradation of the dielectric layer. This experimental physics-based study shows that the large HRS/LRS ratio below the current compliance limit of 1 mA and the ability to control the HRS and LRS by varying the compliance current are attractive for memristor and neuromorphic computing applications.

Shallcross, Austin↗
NASA NTRS1990

Switching Matrix For Optical Signals

Proposed matrix of electronically controlled shutters switches signals in optical fibers between multiple input and output channels. Size, weight, and power consumption reduced. Device serves as building block for small, low-power, broad-band television- and data-signal-switching systems providing high isolation between nominally disconnected channels.

Grove, Charles H.↗
DOE OSTI2022

High Velocity, Low‐Voltage Collective In‐Plane Switching in (100) BaTiO 3 Thin Films

Abstract Ferroelectrics are being increasingly called upon for electronic devices in extreme environments. Device performance and energy efficiency is highly correlated to clock frequency, operational voltage, and resistive loss. To increase performance it is common to engineer ferroelectric domain structure with highly‐correlated electrical and elastic coupling that elicit fast and efficient collective switching. Designing domain structures with advantageous properties is difficult because the mechanisms involved in collective switching are poorly understood and difficult to investigate. Collective switching is a hierarchical process where the nano‐ and mesoscale responses control the macroscopic properties. Using chemical solution synthesis, epitaxially nearly‐relaxed (100) BaTiO 3 films are synthesized. Thermal strain induces a strongly‐correlated domain structure with alternating domains of polarization along the [010] and [001] in‐plane axes and 90° domain walls along the [011] or [01] directions. Simultaneous capacitance–voltage measurements and band‐excitation piezoresponse force microscopy revealed strong collective switching behavior. Using a deep convolutional autoencoder, hierarchical switching is automatically tracked and the switching pathway is identified. The collective switching velocities are calculated to be ≈500 cm s −1 at 5 V (7 kV cm −1 ), orders‐of‐magnitude faster than expected. These combinations of properties are promising for high‐speed tunable dielectrics and low‐voltage ferroelectric memories and logic.

36 MATERIALS SCIENCE↗
NASA NTRS2014

Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Scheick, Leif↗
DOE OSTI2023

Design of high polarization low switching barrier hybrid improper ferroelectric perovskite oxide superlattices

Hybrid improper ferroelectricity is a useful tool to design ABO 3 /A'BO 3 polar superlattices from non polar building blocks. In this study, we have designed high polarization-low switching barrier hybrid improper ferroelectric superlattices with efficient polarization, and polarization-magnetization switching properties above room temperature, using density functional theory and ab initio molecular dynamics simulations. Superlattices with a chemical formula of (AAlO 3 ) m /(A'AlO 3 ) n , where m/n = 1/1, 1/3, 3/1, 1/5 and 5/1, A, A' = Lanthanide and Y cations are considered to outline the design principles behind polarization switching and (LaFeO 3 ) 3 /(CeFeO 3 ) 1 is investigated for polarization-magnetization switching. We find that the unconventional switching paths via out-of-phase rotation Q R- (a 0 a 0 c - ) and tilt precession QTP always yield lower switching barrier compared to those via in-phase rotation Q R+ (a 0 a 0 c + ) and tilt QT (a - a - c 0 ) of BO 6 octahedra. Results from ab initio molecular dynamics simulations estimate the temperature at which the lowest energy barrier can be overcome. Furthermore, it is possible to tune the polarization switching barrier by tuning the tolerance factor, A,A' cation radius mismatch and super lattice periodicity. For switching via Q R- , the switching barrier varies exponentially with rotation angle, indicating how high switching barrier is expected for systems, away from cubic symmetry. We provide a recipe to overcome such a bottleneck by tuning superlattice periodicity. Finally, we have proposed the multiferroic device application concept through a proposed polarization-temperature hysteresis loop and magnetization switching.

36 MATERIALS SCIENCE↗
NASA NTRS2001

Piezoelectric Vibrational and Acoustic Alert for a Personal Communication Device

An alert apparatus for a personal communication device includes a mechanically prestressed piezoelectric wafer positioned within the personal communication device and an alternating voltage input line coupled at two points of the wafer where polarity is recognized. The alert apparatus also includes a variable frequency device coupled to the alternating voltage input line, operative to switch the alternating voltage on the alternating voltage input line at least between an alternating voltage having a first frequency and an alternating voltage having a second frequency. The first frequency is preferably sufficiently high so as to cause the wafer to vibrate at a resulting frequency that produces a sound perceptible by a human ear, and the second frequency is preferably sufficiently low so as to cause the wafer to vibrate at a resulting frequency that produces a vibration readily felt by a holder of the personal communication device.

Stanley E Woodard↗
DOE OSTI2025

An electro-optical Mott neuron based on niobium dioxide

Various applications—including brain-like computing and on-chip artificial vision—increasingly demand a combination of electronic and photonic techniques. However, integrating both approaches on a single chip is challenging, and solutions typically rely on disparate components with power-hungry signal conversions. Here, in this paper, we report electro-optical Mott neurons that combine visible light emission with electrical threshold switching, as well as neuron-like oscillations. The devices are based on thin films of sputtered niobium dioxide (NbO 2 ), a Mott insulator–metal transition material, operating at room temperature and emitting light that peaks around 810 nm. Operando measurements reveal an electronic origin to the light emission: charge carrier relaxation initiated by high-field transport in the NbO 2 . Our devices combine electrical and optical functions within a single material, thereby expanding the options available for future artificial intelligence hardware.

electrical engineering↗
DOE OSTI2025

Parameter extraction for a SPICE model of an hTron superconducting thermal switch

Efficiently simulating large circuits is crucial to the development of superconducting nanowire-based electronics. However, current simulation tools for this technology are not adapted to the scaling of circuit size and complexity. We focus on the multilayered heater-nanocryotron (hTron), a promising superconducting nanowire-based switch used in applications such as superconducting nanowire single-photon detector readout. Previously, the hTron was modeled using traditional finite-element methods, which fall short in simulating systems at a larger scale. An empirical-based method would be better adapted to this task, enhancing both simulation speed and agreement with experimental data. In this work, we perform switching current and activation delay measurements on 17 hTron devices. We then develop a method for extracting physical fitting parameters used to characterize the devices. We build a SPICE behavioral model that reproduces the static and transient device behavior using these parameters, and validate it by comparing its performance to a model developed in prior work, showing an improvement in simulation time by several orders of magnitude. Furthermore, our model provides circuit designers with a tool to help understand the hTron’s behavior during all design stages, thus enabling broader use of the hTron across various new areas of application.

Caloritronics↗
NASA NTRS1988

Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al, Ga) As lasers

Broad area graded-index separate-confinement heterostructure single quantum well lasers grown by molecular-beam epitaxy (MBE) with threshold current density as low as 93 A/sq cm (520 microns long) have been fabricated. Buried lasers formed from similarly structured MBE material with liquid phase epitaxy regrowth had threshold currents at submilliampere levels when high reflectivity coatings were applied to the end facets. A CW threshold current of 0.55 mA was obtained for a laser with facet reflectivities of about 80 percent, a cavity length of 120 micron, and an active region stripe width of 1 micron. These devices driven directly with logic level signals have switch-on delays less than 50 ps without any current prebias. Such lasers permit fully on-off switching while at the same time obviating the need for bias monitoring and feedback control.

Derry, P. L.↗
NASA NTRS1990

Optical interconnections and networks; Proceedings of the Meeting, The Hague, Netherlands, Mar. 14, 15, 1990

The conference presents papers on interconnections, clock distribution, neural networks, and components and materials. Particular attention is given to a comparison of optical and electrical data interconnections at the board and backplane levels, a wafer-level optical interconnection network layout, an analysis and simulation of photonic switch networks, and the integration of picosecond GaAs photoconductive devices with silicon circuits for optical clocking and interconnects. Consideration is also given to the optical implementation of neural networks, invariance in an optoelectronic implementation of neural networks, and the recording of reversible patterns in polymer lightguides.

Bartelt, Hartmut↗