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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 667 records · Page 37
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Range-based memory system

A mechanism is provided for efficient coherence state modification of cached data stored in a range of addresses in a coherent data processing system in which data coherency is maintained across multiple caches. A tag search structure is maintained that identifies address tags and coherence states of cached data indexed by address tags. In response to a request from a device internal to or external from the coherence network, the tag search structure is searched to identify address tags of cached data for which the coherence state is to be modified and requests are issued in the data processing system to modify a coherence state of cached lines with the identified address tags. The request from the external device may specify a range of addresses for which a coherence state change is sought. The tag search structure may be implemented as search tree, for example.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Reliability processing of remote direct memory access

Methods and systems for monitoring remote transmissions of messages among a plurality of nodes are described. A processing element in a first node may allocate a sequence number to a request to read and/or update data in a second node. The processing element may be different from main processors of the first node. The processing element may send the message and the sequence number to the second node. The processing element may modify a status of the sequence number to an active state, indicating a transmission of the message is pending. The processing element may, in response to a response from the second node, modify the status of the sequence number to an inactive state, indicating a completed transmission of the message. The processing element may, in response to no response from the second node within a time period, resend the message and the sequence number to the second node.

Kumar, Sameer↗
DOE OSTI2021

GaN-based threshold switching device and memory diode

A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.

Fu, Kai↗