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NASA NTRS2010

Submonolayer Quantum Dot Infrared Photodetector

A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

Ting, David Z.↗
NASA NTRS2011

The Effect of Photon Source on Heterogeneous Photocatalytic Oxidation of Ethanol by a Silica-Titania Composite

The objective of this study was to distinguish the effect of photon flux (i.e., photons per unit time reaching a surface) from that of photon energy (i.e., wavelength) of a photon source on the silica-titania composite (STC)-catalyzed degradation of ethanol in the gas phase. Experiments were conducted in a bench-scale annular reactor packed with STC pellets and irradiated with either a UV-A fluorescent black light blue lamp ((gamma)max=365 nm) at its maximum light intensity or a UV-C germicidal lamp ((gamma)max=254 nm) at three levels of light intensity. The STC-catalyzed oxidation of ethanol was found to follow zero-order kinetics with respect to CO2 production, regardless of the photon source. Increased photon flux led to increased EtOH removal, mineralization, and oxidation rate accompanied by lower intermediate concentration in the effluent. The oxidation rate was higher in the reactor irradiated by UV-C than by UV-A (38.4 vs. 31.9 nM/s) at the same photon flux, with similar trends for mineralization (53.9 vs. 43.4%) and reaction quantum efficiency (i.e., photonic efficiency, 63.3 vs. 50.1 nmol CO2 (mu)mol/photons). UV-C irradiation also led to decreased intermediate concentration in the effluent . compared to UV-A irradiation. These results demonstrated that STC-catalyzed oxidation is enhanced by both increased photon flux and photon energy.

Coutts, Janelle L.↗
NASA NTRS2005

Hybrid UV Imager Containing Face-Up AlGaN/GaN Photodiodes

A proposed hybrid ultraviolet (UV) image sensor would comprise a planar membrane array of face-up AlGaN/GaN photodiodes integrated with a complementary metal oxide/semiconductor (CMOS) readout-circuit chip. Each pixel in the hybrid image sensor would contain a UV photodiode on the AlGaN/GaN membrane, metal oxide/semiconductor field-effect transistor (MOSFET) readout circuitry on the CMOS chip underneath the photodiode, and a metal via connection between the photodiode and the readout circuitry (see figure). The proposed sensor design would offer all the advantages of comparable prior CMOS active-pixel sensors and AlGaN UV detectors while overcoming some of the limitations of prior (AlGaN/sapphire)/CMOS hybrid image sensors that have been designed and fabricated according to the methodology of flip-chip integration. AlGaN is a nearly ideal UV-detector material because its bandgap is wide and adjustable and it offers the potential to attain extremely low dark current. Integration of AlGaN with CMOS is necessary because at present there are no practical means of realizing readout circuitry in the AlGaN/GaN material system, whereas the means of realizing readout circuitry in CMOS are well established. In one variant of the flip-chip approach to integration, an AlGaN chip on a sapphire substrate is inverted (flipped) and then bump-bonded to a CMOS readout circuit chip; this variant results in poor quantum efficiency. In another variant of the flip-chip approach, an AlGaN chip on a crystalline AlN substrate would be bonded to a CMOS readout circuit chip; this variant is expected to result in narrow spectral response, which would be undesirable in many applications. Two other major disadvantages of flip-chip integration are large pixel size (a consequence of the need to devote sufficient area to each bump bond) and severe restriction on the photodetector structure. The membrane array of AlGaN/GaN photodiodes and the CMOS readout circuit for the proposed image sensor would be fabricated separately.

Zheng, Xinyu↗
NASA NTRS2004

Chemical Thinning Process for Fabricating UV-Imaging CCDs

The thinning stage of the postfabrication process reported in the immediately preceding article is notable in its own right. Although the thinning process was described in the preceding article as part of an overall process of fabrication of a supported charge-coupled device (CCD), it is more generally applicable to both free-standing and supported devices that have been fabricated in die and wafer formats. Like the thermocompression bonding process described in the preceding article, the thinning process is compatible with CCD-fabrication processes, as well as postfabrication processes that enhance the response of CCDs to ultraviolet (UV) light, including the delta-doping process. CCDs that are thinned by this process and then delta-doped exhibit high quantum efficiencies that are stable with time and with exposure to the environment.

Jones, TOdd↗
NASA NTRS2004

Fabrication of Robust, Flat, Thinned, UV-Imaging CCDs

An improved process that includes a high-temperature bonding subprocess has been developed to enable the fabrication of robust, flat, silicon-based charge-coupled devices (CCDs) for imaging in ultraviolet (UV) light and/or for detecting low-energy charged particles. The CCDs in question are devices on which CCD circuitry has already been formed and have been thinned for backsurface illumination. These CCDs may be delta doped, and aspects of this type of CCD have been described in several prior articles in NASA Tech Briefs. Unlike prior low-temperature bonding subprocesses based on the use of epoxies or waxes, the high-temperature bonding subprocess is compatible with the deltadoping process as well as with other CCD-fabrication processes. The present improved process and its bonding, thinning, and delta-doping subprocesses, are characterized as postfabrication processes because they are undertaken after the fabrication of CCD circuitry on the front side of a full-thickness silicon substrate. In a typical case, it is necessary to reduce the thickness of the CCD to between 10 and 20 m in order to take advantage of back-side illumination and in order to perform delta doping and/or other back-side treatment to enhance the quantum efficiency. In the prior approach to the fabrication of back-side-illuminated CCDs, the thinning subprocess turned each CCD into a free-standing membrane that was fragile and tended to become wrinkled. In the present improved process, prior to thinning and delta doping, a CCD is bonded on its front side to a silicon substrate that has been prefabricated to include cutouts to accommodate subsequent electrical connections to bonding pads on the CCD circuitry. The substrate provides structural support to increase ruggedness and maintain flatness. At the beginning of this process, the back side of a CCD as fabricated on a full-thickness substrate is polished. Silicon nitride is deposited on the back side, opposite the bonding pads on the front side, in order to define a relatively thick frame. The portion of the CCD not covered by the frame is the portion to be thinned by etching.

Grunthaner, Paula↗
NASA NTRS2003

Using Correlated Photons to Suppress Background Noise

A proposed method of suppressing the effect of background noise in an optical communication system would exploit the transmission and reception of correlated photons at the receiver. The method would not afford any advantage in a system in which performance is limited by shot noise. However, if the performance of the system is limited by background noise (e.g., sunlight in the case of a free-space optical communication system or incoherently scattered in-band photons in the case of a fiber-optic communication system), then the proposed method could offer an advantage: the proposed method would make it possible to achieve a signal-to-noise ratio (S/N) significantly greater than that of an otherwise equivalent background- noise-limited optical communication system based on the classical transmission and reception of uncorrelated photons. The figure schematically depicts a classical optical-communication system and a system according to the proposed method. In the classical system, a modulated laser beam is transmitted along an optical path to a receiver, the optics of which include a narrow-band-pass filter that suppresses some of the background noise. A photodetector in the receiver detects the laser-beam and background photons, most or all of which are uncorrelated. In the proposed system, correlated photons would be generated at the transmitter by making a modulated laser beam pass through a nonlinear parametric down-conversion crystal. The sum of frequencies of the correlated photons in each pair would equal the frequency of the incident photon from which they were generated. As in the classical system, the correlated photons would travel along an optical path to a receiver, where they would be band-pass filtered and detected. Unlike in the classical system, the photodetector in the receiver in this system would be one that intrinsically favors the detection of pairs of correlated photons over the detection of uncorrelated photons. Even though there would be no way of knowing the precise location and time of creation of a given pair of correlated signal photons in the nonlinear down-conversion crystal, the fact that the photons are necessarily created at the same time and place makes it possible to utilize conventional geometrical imaging optics to reunite the photons in coincidence in the receiving photodetector. Because most or all of the signal photons would be correlated while most or all of the noise photons would be uncorrelated, the S/N would be correspondingly enhanced in the photodetector output. An additional advantage to be gained by use of a correlated-photon detector is that it could be capable of recovering the signal even in the presence of background light so bright that a classical uncorrelated-photon detector would be saturated. A blocked-impurity-band (BIB) photodetector that preferentially detects pairs of correlated photons over uncorrelated ones and that operates at a quantum efficiency of 88 percent is commercially available. This detector must be cooled to the temperature of liquid helium to obtain the desired low-noise performance. It is planned to use this detector in a proof-of-principle demonstration. In addition, it may be possible to develop GaN-based photodetectors that could offer the desired low-noise performance at room temperature.

Jackson, Deborah↗
NASA NTRS2011

Detection and Correction of Step Discontinuities in Kepler Flux Time Series

PDC 8.0 includes an implementation of a new algorithm to detect and correct step discontinuities appearing in roughly one of every 20 stellar light curves during a given quarter. The majority of such discontinuities are believed to result from high-energy particles (either cosmic or solar in origin) striking the photometer and causing permanent local changes (typically -0.5%) in quantum efficiency, though a partial exponential recovery is often observed [1]. Since these features, dubbed sudden pixel sensitivity dropouts (SPSDs), are uncorrelated across targets they cannot be properly accounted for by the current detrending algorithm. PDC detrending is based on the assumption that features in flux time series are due either to intrinsic stellar phenomena or to systematic errors and that systematics will exhibit measurable correlations across targets. SPSD events violate these assumptions and their successful removal not only rectifies the flux values of affected targets, but demonstrably improves the overall performance of PDC detrending [1].

Kolodziejczak, J. J.↗
NASA NTRS2012

Near-Infrared Photon-Counting Camera for High-Sensitivity Observations

The dark current of a transferred-electron photocathode with an InGaAs absorber, responsive over the 0.9-to-1.7- micron range, must be reduced to an ultralow level suitable for low signal spectral astrophysical measurements by lowering the temperature of the sensor incorporating the cathode. However, photocathode quantum efficiency (QE) is known to reduce to zero at such low temperatures. Moreover, it has not been demonstrated that the target dark current can be reached at any temperature using existing photocathodes. Changes in the transferred-electron photocathode epistructure (with an In- GaAs absorber lattice-matched to InP and exhibiting responsivity over the 0.9- to-1.7- m range) and fabrication processes were developed and implemented that resulted in a demonstrated >13x reduction in dark current at -40 C while retaining >95% of the approximately equal to 25% saturated room-temperature QE. Further testing at lower temperature is needed to confirm a >25 C predicted reduction in cooling required to achieve an ultralow dark-current target suitable for faint spectral astronomical observations that are not otherwise possible. This reduction in dark current makes it possible to increase the integration time of the imaging sensor, thus enabling a much higher near-infrared (NIR) sensitivity than is possible with current technology. As a result, extremely faint phenomena and NIR signals emitted from distant celestial objects can be now observed and imaged (such as the dynamics of redshifting galaxies, and spectral measurements on extra-solar planets in search of water and bio-markers) that were not previously possible. In addition, the enhanced NIR sensitivity also directly benefits other NIR imaging applications, including drug and bomb detection, stand-off detection of improvised explosive devices (IED's), Raman spectroscopy and microscopy for life/physical science applications, and semiconductor product defect detection.

Jurkovic, Michael↗
NASA NTRS2011

High-Performance LWIR Superlattice Detectors and FPA Based on CBIRD Design

We report our recent efforts on advancing of antimonide superlattice based infrared photodetectors and demonstration of focal plane arrays based on a complementary barrier infrared detector (CBIRD) design. By optimizing design and growth condition we succeeded to reduce the operational bias of CBIRD single pixel detector without increase of dark current or degradation of quantum efficiency. We demonstrated a 1024x1024 pixel long-waveleng thinfrared focal plane array utilizing CBIRD design. An 11.5 micrometer cutoff focal plane without anti-reflection coating has yielded noise equivalent differential temperature of 53 mK at operating temperature of 80 K, with 300 K background and cold-stop. Imaging results from a recent 10 micrometer cutoff focal plane array are also presented. These results advance state-of-the art of superlattice detectors and demonstrated advantages of CBIRD architecture for realization of FPA.

infrared↗
NASA NTRS2012

GaN-Based Detector Enabling Technology for Next Generation Ultraviolet Planetary Missions

The ternary alloy AlN-GaN-InN system provides several distinct advantages for the development of UV detectors for future planetary missions. First, (InN), (GaN) and (AlN) have direct bandgaps 0.8, 3.4 and 6.2 eV, respectively, with corresponding wavelength cutoffs of 1550 nm, 365 nm and 200 nm. Since they are miscible with each other, these nitrides form complete series of indium gallium nitride (In(sub l-x)Ga(sub x)N) and aluminum gallium nitride (Al(sub l-x)Ga(sub x)N) alloys thus allowing the development of detectors with a wavelength cut-off anywhere in this range. For the 2S0-365 nm spectral wavelength range AlGaN detectors can be designed to give a 1000x solar radiation rejection at cut-off wavelength of 325 nm, than can be achieved with Si based detectors. For tailored wavelength cut-offs in the 365-4S0 nm range, InGaN based detectors can be fabricated, which still give 20-40x better solar radiation rejection than Si based detectors. This reduced need for blocking filters greatly increases the Detective Quantum efficiency (DQE) and simplifies the instrument's optical systems. Second, the wide direct bandgap reduces the thermally generated dark current to levels allowing many observations to be performed at room temperature. Third, compared to narrow bandgap materials, wide bandgap semiconductors are significantly more radiation tolerant. Finally, with the use of an (AI, In)GaN array, the overall system cost is reduced by eliminating stringent Si CCD cooling systems. Compared to silicon, GaN based detectors have superior QE based on a direct bandgap and longer absorption lengths in the UV.

Aslam, S.↗
NASA NTRS2012

Inductively Coupled Plasma Etching for Delineation of InAs/GaSb Pixels

We developed 320x256 Complimentary Barrier Infrared (CBIRD) focal plane array (FPA) for long wave infrared (LWIR) imaging application. The FPA layers grown by molecular beam epitaxy (MBE) had 300 periods 1.9 micro m thick absorber. The CBIRD arrays showed the mean dark current density of 2.2 x 10(exp -4) A/cm2, when 128 mV bias voltage was applied. The long wave cut off was observed at 8.8 micrometers at the 50% peak and the maximum quantum efficiency was 54% at 5.6 micrometers. The arrays had 81% fill factor with 97% operability with noise equivalent difference temperature (NE(delta)T) of 18.6 mK and a mean detectivity of D*=1.3 x 10(exp 11) Hz(exp 1/2)/W.

InAs/GaSb↗
NASA NTRS2012

320 x 256 Complementary Barrier Infrared Detector Focal Plane Array for Long-Wave Infrared Imaging

A 320 x 256 Complementary Barrier Infrared (CBIRD) focal plane array for long-wavelength infrared (LWIR) imaging is reported. The arrays were grown by molecular beam expitaxy (MBE) with a 300 period 1.9 um thick absorber. The mean dark current density of 2.2 x 10-4 A/cm2 was measured at an operating bias of 128 mV with a long wavelength cutoff of 8.8 ?m observed at 50% of the peak. The maximum quantum efficiency was 54% measured at 5.6 ?m. Operating at T = 80K, the array yielded an 81% fill factor with 97% operability. Good imagery with a mean noise equivalent different temperature (NE?T) of 18.6 mK and a mean detectivity of D* = 1.3 x 1011 cm-Hz1/2/W was achieved. The substrate was thinned using mechanical lapping and neither an AR coating nor a passivation layer was applied. This article provides the details of the fabrication process for achieving low-dark current LWIR CBIRD arrays. Discussion for an effective hard mask for excellent pattern transfer is given and appropriate mounting techniques for good thermal contact during the dry etching process is described. The challenges and differences between etching large 200 ?m test diodes and small 28 ?m FPA pixels are given.

Focal Plane Arrays (FPA)↗
NASA NTRS2012

High-Performance LWIR Superlattice Detectors and FPA Based on CBIRD Design

We report our recent efforts on advancing of antimonide superlattice based infrared photodetectors and demonstration of Focal Plane Arrays (FPA) based on a complementary barrier infrared detector (CBIRD) design. By optimizing design and growth condition we succeeded to reduce the operational bias of CBIRD single pixel detector without increase of dark current or degradation of quantum efficiency. We demonstrated a 1024x1024 pixel long-wavelength infrared focal plane array utilizing CBIRD design. An 11.5 ?m cutoff FPA without anti-reflection coating has yielded noise equivalent differential temperature of 53 mK at operating temperature of 80 K, with 300 K background and cold-stop. In addition, we demonstrated 320x256 format FPA based on the n-CBIRD design. The resulting FPAs yielded noise equivalent differential temperature of 26 mK at operating temperature of 80 K, with 300 K background and cold-stop. These results advance state-of-the art of superlattice detectors and demonstrated advantages of CBIRD architecture for realization of FPA.

unipolar barrier↗
NASA NTRS2013

Trace Contaminant Control: An In-Depth Study of a Silica-Titania Composite for Photocatalytic Remediation of Closed-Environment Habitat Air

This collection of studies focuses on a PCO system for the oxidation of a model compound, ethanol, using an adsorption-enhanced silica-TiO2 composite (STC) as the photocatalyst; studies are aimed at addressing the optimization of various parameters including light source, humidity, temperature, and possible poisoning events for use as part of a system for gaseous trace-contaminant control system in closed-environment habitats. The first goal focused on distinguishing the effect of photon flux (i.e., photons per unit time reaching a surface) from that of photon energy (i.e., wavelength) of a photon source on the PCO of ethanol. Experiments were conducted in a bench-scale annular reactor packed with STC pellets and irradiated with either a UV-A fluorescent black light blue lamp O max=365 nm) at its maximum light intensity or a UV-C germicidal lamp O. max=254 nm) at three levels of light intensity. The STC-catalyzed oxidation of ethanol was found to follow zero-order kinetics with respect to CO2 production, regardless of the photon source. Increased photon flux led to increased EtOH removal, mineralization, and oxidation rate accompanied by lower intermediate concentration in the effluent. The oxidation rate was higher in the reactor irradiated by UV-C than by UV-A (38.4 vs. 31.9 nM s-1 ) at the same photon flux, with similar trends for mineralization (53.9 vs. 43.4%) and reaction quantum efficiency (i.e., photonic efficiency, 63.3 vs. 50.1 nmol C02 ~mol photons-1 ). UV-C irradiation also led to decreased intermediate concentration in the effluent compared to UV -A irradiation. These results demonstrated that STC-catalyzed oxidation is enhanced by both increased photon flux and photon energy. The effect of temperature and relative humidity on the STC-catalyzed degradation of ethanol was also determined using the UV-A light source at its maximum intensity.

Coutts, Janelle L.↗
NASA NTRS2014

Performance Characterization of UV Science Cameras Developed for the Chromospheric Lyman-Alpha Spectro-Polarimeter

The NASA Marshall Space Flight Center (MSFC) has developed a science camera suitable for sub-orbital missions for observations in the UV, EUV and soft X-ray. Six cameras will be built and tested for flight with the Chromospheric Lyman-Alpha Spectro-Polarimeter (CLASP), a joint National Astronomical Observatory of Japan (NAOJ) and MSFC sounding rocket mission. The goal of the CLASP mission is to observe the scattering polarization in Lyman-alpha and to detect the Hanle effect in the line core. Due to the nature of Lyman-alpha polarization in the chromosphere, strict measurement sensitivity requirements are imposed on the CLASP polarimeter and spectrograph systems; science requirements for polarization measurements of Q/I and U/I are 0.1 percent in the line core. CLASP is a dual-beam spectro- polarimeter, which uses a continuously rotating waveplate as a polarization modulator, while the waveplate motor driver outputs trigger pulses to synchronize the exposures. The CCDs are operated in frame-transfer mode; the trigger pulse initiates the frame transfer, effectively ending the ongoing exposure and starting the next. The strict requirement of 0.1 percent polarization accuracy is met by using frame-transfer cameras to maximize the duty cycle in order to minimize photon noise. Coating the e2v CCD57-10 512x512 detectors with Lumogen-E coating allows for a relatively high (30 percent) quantum efficiency at the Lyman-alpha line. The CLASP cameras were designed to operate with a gain of 2.0 +/- 0.5, less than or equal to 25 e- readout noise, less than or equal to 10 e-/second/pixel dark current, and less than 0.1percent residual non-linearity. We present the results of the performance characterization study performed on the CLASP prototype camera; system gain, dark current, read noise, and residual non-linearity.

Champey, Patrick↗
NASA NTRS2014

Performance Characterization of UV Science Cameras Developed for the Chromospheric Lyman-Alpha Spectro-Polarimeter (CLASP)

The NASA Marshall Space Flight Center (MSFC) has developed a science camera suitable for sub-orbital missions for observations in the UV, EUV and soft X-ray. Six cameras will be built and tested for flight with the Chromospheric Lyman-Alpha Spectro-Polarimeter (CLASP), a joint National Astronomical Observatory of Japan (NAOJ) and MSFC sounding rocket mission. The goal of the CLASP mission is to observe the scattering polarization in Lyman-alpha and to detect the Hanle effect in the line core. Due to the nature of Lyman-alpha polarization in the chromosphere, strict measurement sensitivity requirements are imposed on the CLASP polarimeter and spectrograph systems; science requirements for polarization measurements of Q/I and U/I are 0.1% in the line core. CLASP is a dual-beam spectro-polarimeter, which uses a continuously rotating waveplate as a polarization modulator, while the waveplate motor driver outputs trigger pulses to synchronize the exposures. The CCDs are operated in frame-transfer mode; the trigger pulse initiates the frame transfer, effectively ending the ongoing exposure and starting the next. The strict requirement of 0.1% polarization accuracy is met by using frame-transfer cameras to maximize the duty cycle in order to minimize photon noise. Coating the e2v CCD57-10 512x512 detectors with Lumogen-E coating allows for a relatively high (30%) quantum efficiency at the Lyman-$\alpha$ line. The CLASP cameras were designed to operate with ≤10 e- /pixel/second dark current, ≤ 25 e- read noise, a gain of 2.0 and ≤0.1% residual non-linearity. We present the results of the performance characterization study performed on the CLASP prototype camera; dark current, read noise, camera gain and residual non-linearity.

Champey, Patrick↗
NASA NTRS2014

Performance Characterization of UV Science Cameras Developed for the Chromospheric Lyman-Alpha Spectro-Polarimeter

The NASA Marshall Space Flight Center (MSFC) has developed a science camera suitable for sub-orbital missions for observations in the UV, EUV and soft X-ray. Six cameras will be built and tested for flight with the Chromospheric Lyman-Alpha Spectro-Polarimeter (CLASP), a joint National Astronomical Observatory of Japan (NAOJ) and MSFC sounding rocket mission. The goal of the CLASP mission is to observe the scattering polarization in Lyman-alpha and to detect the Hanle effect in the line core. Due to the nature of Lyman-alpha polarization in the chromosphere, strict measurement sensitivity requirements are imposed on the CLASP polarimeter and spectrograph systems; science requirements for polarization measurements of Q/I and U/I are 0.1 percent in the line core. CLASP is a dual-beam spectro-polarimeter, which uses a continuously rotating waveplate as a polarization modulator, while the waveplate motor driver outputs trigger pulses to synchronize the exposures. The CCDs are operated in frame-transfer mode; the trigger pulse initiates the frame transfer, effectively ending the ongoing exposure and starting the next. The strict requirement of 0.1 percent polarization accuracy is met by using frame-transfer cameras to maximize the duty cycle in order to minimize photon noise. Coating the e2v CCD57-10 512x512 detectors with Lumogen-E coating allows for a relatively high (30 percent) quantum efficiency at the Lyman-alpha line. The CLASP cameras were designed to operate with 10 e-/pixel/second dark current, 25 e- read noise, a gain of 2.0 +/- 0.5 and 1.0 percent residual non-linearity. We present the results of the performance characterization study performed on the CLASP prototype camera; dark current, read noise, camera gain and residual non-linearity.

Champey, P.↗