Search NASA⌕ Search

SEARCH · Search NASA

Results for “Optical Absorption”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Mechanically induced intramolecular electron transfer in a mixed-valence molecular shuttle

The kinetics and thermodynamics of intramolecular electron transfer (IET) can be subjected to redox control in a bistable [2]rotaxane comprised of a dumbbell component containing an electron-rich 1,5-dioxynaphthalene (DNP) unit and an electron-poor phenylene-bridged bipyridinium (P-BIPY2+) unit and a cyclobis (paraquat-p-phenylene) (CBPQT4+) ring component. The [2]rotaxane exists in the ground-state co-conformation (GSCC) wherein the CBPQT4+ ring encircles the DNP unit. Reduction of the CBPQT4+ leads to the CBPQT2(•+) diradical dication while the P-BIPY2+ unit is reduced to its P-BIPY•+ radical cation. A radical-state co-conformation (RSCC) results from movement of the CBPQT2(•+) ring along the dumbbell to surround the P-BIPY•+ unit. This shuttling event induces IET to occur between the pyridinium redox centers of the P-BIPY•+ unit, a property which is absent between these redox centers in the free dumbbell and in the 1:1 complex formed between the CBPQT2(•+) ring and the radical cation of methyl-phenylene-viologen (MPV•+). Using electron paramagnetic resonance (EPR) spectroscopy, the process of IET was investigated by monitoring the line broadening at varying temperatures and determining the rate constant (kET = 1.33 × 107 s-1) and activation energy (ΔG‡ = 1.01 kcal mol-1) for electron transfer. These values were compared to the corresponding values predicted, using the optical absorption spectra and Marcus–Hush theory.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Unconventional optical properties of 2D Janus SMoSe induced by structural asymmetry

The Janus SMoSe monolayer that is best-known for its structural asymmetry is found to exhibit unconventional optical properties compared with its counterpart MoSe 2 . Optical transmittance measurements on monolayers that are directly synthesized on sapphire substrates reveal that the transmittance, as well as the real and imaginary parts of the optical dielectric constants of Janus SMoSe obtained from the Kramers–Kronig constrained analysis, show strong dependence on the polarization direction of the incident light. Meanwhile, the transmittance of the unpolarized light of Janus SMoSe becomes insensitive to light at incident angles up to 30°. The intrinsic dipoles induced by the structural asymmetry of Janus SMoSe are believed to produce these distinct optical properties. Finally, by estimating the optical absorption of the intrinsic dipoles and tracing their dependence on the light incident angles, we speculate that the dipoles are not perpendicularly aligned to the in-plane direction of the monolayer, but rather tilted by a small angle between 0° and 10°.

36 MATERIALS SCIENCE↗
DOE OSTI2016

In-situ plasma hydrogenated TiO{sub 2} thin films for enhanced photoelectrochemical properties

Highlights: • Growth of TiO{sub 2} thin films with in-situ plasma hydrogenation. • Presence of Ti{sup 2+} states in addition to Ti{sup 3+} states present in pristine TiO{sub 2}. • Change in VBM, work function and band gap in iH:TiO{sub 2}. • Enhanced photocurrent density as compared to pristine TiO{sub 2} films. - Abstract: In this paper, we report the effect of in-situ plasma hydrogenation of TiO{sub 2} (iH:TiO{sub 2}) thin films by the incorporation of known amount of hydrogen in the Ar plasma during rf-sputter deposition of TiO{sub 2} films. As compared to pristine TiO{sub 2} films (∼0.43 mA/cm2 at 0.23 V vs Ag/AgCl), hydrogenated TiO{sub 2} showed enhanced photoelectrochemical activity in terms of improved photocurrent density of ∼1.08 mA/cm2 (at 0.23 V vs Ag/AgCl). These results are explained in terms of reduction in band gap energy, shift in valence band maximum away from the Fermi level, improved donor density and more negative flat band potential in iH:TiO{sub 2} sample. The presence of Ti{sup 2+} states in iH:TiO{sub 2} films in addition to Ti{sup 3+} states in pristine TiO{sub 2} act as additional electronic states in the TiO{sub 2} band gap and increases the optical absorption in the visible region. This method of in-situ hydrogenation can be used as a general method for improving the properties of metal oxide thin films for photoelectrochemical and photocatalytic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Revealing Parallel Inter‐ and Intra‐Ligand Charge Transfer Dynamics in [Ru(L) 2 (dppz)] 2+ Molecular Lightswitch with N K‐Edge X‐Ray Absorption Spectroscopy

In photoactive metal complexes the localization of photoexcited charges dictates the site of chemical reactivity, but few studies measure the charge redistribution in these systems with spatial precision. Herein, we track the inter- and intra-ligand charge transfer processes that underpin light-driven charge separation in the well-studied “molecular lightswitch” [Ru(bpy) 2 dppz] 2+ (aqueous [Ruthenium II (2,2′-bipyridine)2(dipyrido[3,2-a:2′,3′-c]phenazine)] 2+ [Cl − ] 2 ) by probing the electronic structure of ligand nitrogen atoms in real-time using ultrafast X-ray absorption spectroscopy and first principles calculations. We confirm the localization of excited electron density on the phenazine N atoms of dppz and we newly identify two parallel electron transfer pathways to populate this state. Sub-70 fs electron transfer to the phenazine portion of dppz is observed and attributed to intra-ligand electron transfer following Ru-to-dppz metal-to-ligand charge transfer (MLCT) excitation. This fast charge transfer was not reported in prior ultrafast studies. The slower (ca. 2 ps) charge transfer reported extensively in time-resolved optical absorption and emission studies is reassigned here to inter-ligand electron “hopping” between nearly isoenergetic ligand moieties following Ru-to-bpy MLCT excitation. In conclusion, the results demonstrate much faster charge separation than previously identified in this well-studied system, highlighting how extended azaacene ligand motifs promote the competitive charge transfer processes needed to drive light-driven electron transfer chemistry.

Donor-acceptor systems↗
DOE OSTI2025

Computational and Experimental Investigation of Chiral and Achiral Two‐Dimensional Organic Lead Bromide Perovskites: Octahedral Distortions and Electronic and Optical Properties

A computational investigation is presented, in conjunction with synthesis and experimental characterization, into the structural, electronic, and optical properties of layered two-dimensional organic lead bromide perovskites. Materials based on the chiral (R/S)-4-fluoro-α-methylbenzylammonium (R/S-FMBA), which have been shown to lead to bright room-temperature circularly polarized luminescence, are contrasted with the similar achiral 4-fluorobenzylammonium (FBA). Using density functional theory (DFT) with van der Waals (vdW) corrections, relaxed structures (compared with X-ray diffraction, XRD) and optical absorption spectra (compared with experiments) are studied, as well as band structure and orbital character of transitions. A Python code is developed and provided to calculate octahedral distortions and compare DFT and XRD results, finding that vdW corrections are important for accuracy and that DFT overestimates octahedral tilt angles. (FMBA) 2 PbBr 4 shows among the largest tilt angle differences (often termed Δ β ) reported, 14°–15°, indicating strong inversion symmetry-breaking, which enables its chiral emission. A large resulting Dresselhaus spin-splitting effect is found. The lowest-energy optical transitions involve the perovskite only and are polarized within the layer. This work furthers understanding of structure-property relations with applications to optoelectronics and spintronics.

UV/vis spectroscopy↗
DOE OSTI2013

Electronic structure and absorption spectrum of biexciton obtained by using exciton basis

We approach the biexciton Schrödinger equation not through the free-carrier basis as usually done, but through the free-exciton basis, exciton–exciton interactions being treated according to the recently developed composite boson many-body formalism which allows an exact handling of carrier exchange between excitons, as induced by the Pauli exclusion principle. We numerically solve the resulting biexciton Schrödinger equation with the exciton levels restricted to the ground state and we derive the biexciton ground state as well as the bound and unbound excited states as a function of hole-to-electron mass ratio. The biexciton ground-state energy we find, agrees reasonably well with variational results. Next, we use the obtained biexciton wave functions to calculate optical absorption in the presence of a dilute exciton gas in quantum well. We find an asymmetric peak with a characteristic low-energy tail, identified with the biexciton ground state, and a set of Lorentzian-like peaks associated with biexciton unbound states, i.e., exciton–exciton scattering states. Last, we propose a pump–probe experiment to probe the momentum distribution of the exciton condensate. -- Highlights: •New composite boson many-body theory is used to derive exactly the biexciton Schrödinger equation using the exciton basis. •We solved the 2D and 3D biexciton ground- and excited-state binding energies for various electron-to-hole mass ratios. •The absorption spectrum shows an asymmetric low-energy peak identified with the biexciton ground state. •High-energy Lorentzian-like peaks in the absorption spectrum are associated with the exciton–exciton scattering states. •The exciton gas momentum distribution can be determined by the absorption spectrum via the biexciton wave functions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Fabrication and characterization of pristine and annealed Ga doped ZnO thin films using sputtering

ZnO is a wide-band gap, transparent, polar semiconductor with unparalleled optoelectronic, piezoelectric, thermal and transport properties, which make it the material of choice for a wide range of applications such as blue/UV optoelectronics, energy conversion, transparent electronics, spintronic, plasmonic and sensor devices. We report, three sets of Ga doped Zinc Oxide (GZO) were fabricated in different sputtering power (100 watt, 200 watt and 300 watt). Thereafter films were annealed in nitrogen ambient for 30 minutes at 400° C. From the optical absorption spectroscopy it was found that pristine films are showing a 75% transmittance in the visible region of light and it increases after the annealing. However, for 300 W grown sample opposite trend has been achieved for the post annealed sample. X-ray diffraction pattern of all the pristine and annealed films showed a preferable growth orientation at (002) phase. Some other weak peaks were also appeared in different angle which indicates that films are polycrystalline in nature. XRD data also reveals that crystallite size increases with sputtering power up to 200 W and thereafter it decreases with the deposition power. It also noted that the crystallite size of the annealed film increases with compare to the non annealed films. At room temperature an enhancement in electrical properties of Ga doped ZnO thin films was noted for the annealed ZnO films except for the film deposited at 300 watt. More significantly, it was found that annealed thin films showed the resistivity in the range of 10{sup −3} ∼ 10{sup −4} ohm-cm. Such a high optical transmittance and conducting zinc-oxide thin film can be used as a window layer in solar cell.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Thin-film topological insulators for continuously tunable terahertz absorption

One of the defining characteristics of a three-dimensional topological insulator (TI) is the appearance of a Dirac cone on its surface when it creates an interface with vacuum. For thin film TIs, however, the Dirac cones on opposite surfaces interact forming a small gap. For the case of three quintuple layers of Bi 2 Se 3 , we show that this gap can be continuously tuned between 128 meV and 0 meV with the application of modest perpendicular electric fields of less than 30 meV Å -1 . With both the Hamiltonian model and first-principles density functional theory calculations, we show that the inherent nonlinearity in realistic Dirac cone interaction leads to a gap which can be continuously tuned through the application of an external electric field. This tunability, coupled with the high optical absorption of thin film TIs, make this a very promising platform for terahertz and infrared detection.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Spinor $GW$ Bethe-Salpeter calculations in BerkeleyGW: Implementation, symmetries, benchmarking, and performance

Computing the GW quasiparticle band structure and Bethe-Salpeter equation (BSE) absorption spectra for materials with spin-orbit coupling have commonly been done by treating GW corrections and spin-orbit coupling (SOC) as separate perturbations to density-functional theory. However, accurate treatment of materials with strong spin-orbit coupling (such as many topological materials of recent interest, and thermoelectrics) often requires a nonperturbative approach using spinor wave functions in the Kohn-Sham equation and GW/BSE. Such calculations have only recently become available, in particular for the BSE. Here, we have implemented this approach in the plane-wave pseudopotential GW/BSE code BerkeleyGW, which is highly parallelized and widely used in the electronic-structure community. We present reference results for quasiparticle band structures and optical absorption spectra of solids with different strengths of spin-orbit coupling, including Si, Ge, GaAs, GaSb, CdSe, Au, and Bi 2 Se 3 . The calculated quasiparticle band gaps of these systems are found to agree with experiment to within a few tens of meV. SOC splittings are found to be generally in better agreement with experiment, including quasiparticle corrections to band energies. The absorption spectrum of GaAs is not significantly impacted by the inclusion of spin-orbit coupling due to its relatively small value (0.2 eV) in the Λ direction, while the absorption spectrum of GaSb calculated with the spinor GW/BSE captures the large spin-orbit splitting of peaks in the spectrum. For the prototypical topological insulator Bi 2 Se 3 , we find a drastic change in the low-energy band structure compared to that of DFT, with the spinorial treatment of the GW approximation correctly capturing the parabolic nature of the valence and conduction bands after including off-diagonal self-energy matrix elements. We present the detailed methodology, approach to spatial symmetries for spinors, comparison against other codes, and performance compared to spinless GW/BSE calculations and perturbative approaches to SOC. This work aims to spur further development of spinor GW/BSE methodology in excited-state research software and enables a more accurate and detailed exploration of electronic and optical properties of materials containing elements with large atomic numbers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Development of AlGaN‐Based Deep‐Ultraviolet Avalanche Photodetectors—Toward Their Intrinsic Characteristics

Al 0.6 Ga 0.4 N deep‐UV p–i–n avalanche photodiodes (APDs) are demonstrated grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) c‐plane aluminum nitride (AlN) bulk substrate and fabricated both with and without an ion implantation process for mesa‐edge electric‐field termination. Three design considerations are taken into account: the optical absorption of the AlN bulk substrate, the photosensitivity of the APD, and the breakdown electric field. The MOCVD growth conditions of the AlGaN APD layers are optimized. Then, a detailed description of the seven device fabrication steps of the APDs is provided, which includes nitrogen ion implantation. The APDs fabricated by the ion implant process exhibit a dark‐current density under low reverse bias ≈1 × 10 −9 A cm −2 . This is one order of magnitude lower than the APD fabricated without ion implantation from the same wafer. The breakdown voltage of the APD is ≈−140 V. The calculated optical gain of the ion‐implanted APD beyond avalanche breakdown is ≈5.2 × 10 5 (current limited) and the device has an average zero‐bias photoresponse of ≈68 mA W −1 at a wavelength of 250 nm.

Jeong, Hoon [Department of Electronic Engineering ↗
DOE OSTI2016

Rationalizing the suitability of rhodamines as chromophores in dye-sensitized solar cells: A systematic molecular design study

Here, rhodamines are chromophores that are employed in many dye applications. Their strong optical absorption in the visible region of the electromagnetic spectrum renders them attractive dye candidates for dye-sensitized solar cells (DSCs). However, they have not yet been systematically tested in DSCs as single- or co-sensitizers. Recent advances in concerted experimental and computational workflows involving molecular design protocols can afford a better understanding of the molecular origins of the optoelectronic properties in these sensitizers. Herein, we examine the suitability of rhodamines R560 (1), R575 (2), R590 (3), R610 (4), R620 (5), R640 (6), and R3B (7) as chromophores in co-sensitized DSCs. Our study follows a stepwise approach. Initially, structural and optical properties of the dyes are investigated by experimental and computational methods to reveal structure-property relationships and other useful features for DSC applications. Subsequently, 1-7 are investigated at the dye···TiO 2 interface, both by calculations of dye-adsorption onto the surface of a modeled (TiO 2 ) 9 cluster, and by experimental studies of dye-adsorption on TiO 2 . For that purpose, a selection of rhodamine dyes are paired together (1 and 5) and (1 and 7) for co-sensitization, among which 5 is also co-adsorbed with a fluorescein dye in order to explore chemical compatibility factors. The best dye candidates are identified from the findings of these adsorption studies in terms of dye aggregation, anchoring modes, and panchromatic response. Despite their promising dye…TiO 2 adsorption and optical prospects, our results show that rhodamines lack a suitable intramolecular charge transfer pathway for dye-to-TiO 2 electron injection to occur, thus precluding their photovoltaic function as DSC dyes. Our results are then assessed against ostensibly disparate reports of rhodamines performing successfully in DSC devices; this comparison necessitated the internal reproduction of previously reported co-sensitization experiments on 2 with the industrial standard reference dye, N3. We achieve reconciliation between our results and those in the literature by reasoning that while rhodamines cannot deliver photovoltaic function in DSCs in their own right, they can either act to facilitate or deplete the photovoltaic output of a DSC indirectly by affecting the TiO 2 adsorption prospects of a photovoltaic-active dye with which a rhodamine is co-sensitized.

14 SOLAR ENERGY↗
DOE OSTI2014

Optical properties of anodically degraded ZnO

We discuss the optical properties of non-degraded and anodically degraded boron-doped zinc oxide (ZnO:B) deposited by low-pressure chemical vapour deposition on soda-lime glass. The optical model used to simulate the infrared reflectance in the wavelength range between 1.2 and 25 μm is based on the Maxwell-Garnett effective-medium theory. The model is sensitive to the conditions at the grain boundaries of the investigated polycrystalline ZnO:B films. We confirm that the presence of defect-rich grain boundaries, especially after degradation, causes a highly resistive ZnO:B film. Furthermore, indications of a degraded zinc oxide layer next to the ZnO:B/glass interface with different refractive index are found. We present evidence for the creation of oxygen vacancies, based on Raman investigations, which correlate with a shift of the optical absorption edge of the ZnO:B. Investigations with scanning and transmission electron microscopy show microvoids at the grain boundaries after anodic degradation. This indicates that the grain/grain interfaces are the principle location of defects after degradation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

New red phosphor ceramic K 2 SiF 6 :Mn 4+

We report a new transparent ceramic phosphor for use in LED lighting has been fabricated. The previously reported and optimized narrow-emitting red phosphor, K 2 SiF 6 :Mn 4+ (KSF), has been consolidated into a transparent ceramic phosphor for the first time, accomplished via hot-pressing the feedstock phosphor powder in a die under vacuum. KSF ceramics were fabricated with varying doping concentrations of Mn 4+ and their properties studied. The absorption and emission spectra of the ceramics were identical to the feedstock phosphor powders and are ideal for LED lighting with strong absorption at 450 nm and narrow emission around 630 nm. The absorbance of the ceramics was directly proportional to the doping concentration. The ceramics were excited at various blue light fluxes and their emission intensities measured to study the effect of Mn 4+ concentration on intensity-driven “droop” in the emission output. The ceramics with a lower Mn 4+ doping were more efficient under higher light fluxes due to a decrease in Auger upconversion losses. KSF ceramics can allow a much longer path length of the diode light through the phosphor, as compared to phosphor-in-silicone, enabling the use of low optical absorption and the associated reduced activator concentration. The ceramics are measured to have a thermal conductivity of ~1.0 W/m-K, higher than that of phosphor-in-silicone or phosphor-in-glass. Several of these properties make KSF ceramics potentially desirable for use in white light LEDs. Greater thermal conductivity helps with heat dissipation, the lower surface area of the ceramic compared to the powder minimizes the environmental vulnerability of KSF, and the ability to lower the Mn 4+ concentration reduces Auger recombination losses and mitigates the temperature rise, particularly at higher light flux.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Size-Dependent Optical Band Gaps in Metal–Organic Framework Nanoparticles

Decades of research into size-dependent semiconductor optical gaps have focused on quantum confinement as the dominant mechanism. Emerging reports indicate that lattice strain─intentional or incidental─can impart optical shifts similar or greater in magnitude. Here, we report evidence of optical absorption and photoluminescence spectra of M(1,2,3-triazolate)2 (M = Mg, Cr, Mn, Fe, Co, Cu, Zn, or Cd) nanoparticles that blueshift from bulk values with decreasing particle sizes in a manner that defies explanation by conventional quantum confinement. Here, the phenomenon persists for particle sizes as large as 200 nm, whereas quantum confinement generally ceases beyond 20–30 nm diameters and follows a weaker dependence on the particle radius. Computational simulations and crystallographic analysis suggest that this behavior arises from size-dependent changes to metal–linker bonding that manifest in strain values comparable to literature reports of strain-induced optical shifts in other classes of materials. This behavior appears beyond this family of materials in other notable examples of metal–organic frameworks (MOFs), including the well-studied Cu3(trimesate)2 (CuBTC), where smaller sizes correlate with blueshifted optical gaps. Taken together, these results represent one of the few examples of size-dependent strain in crystalline materials and reinforce the emerging view that MOFs become softer materials when isolated as nanoparticles.

Electrical conductivity↗
DOE OSTI2019

Theoretical study of the optical and thermodynamic properties of La x Sr 1-x Co 1-y Fe y O 3-δ ( x / y = 0.25, 0.5, 0.75) perovskites

We report that the performance of La x Sr 1- x Co 1- y Fe y O 3- δ perovskite systems in applications such as solid oxide fuel cells and catalysis is related to the proportion of substitution atoms. Using a density functional theory method, we investigate the doping effect on the electronic, optical, and thermodynamic properties of La x Sr 1- x Co 1- y Fe y O 3- δ ( x / y = 0.25, 0.5, 0.75). Our results show that La doping introduces an empty state and pushes the Fermi level upwards. The doping Fe derived states locate away from the Fermi level as compared with Co states. From the results of optical absorption, the peak at 200–300 nm is enhanced and experiences a blue-shift with increasing La concentration. The corresponding peak at 400–700 nm also shows a blue-shift induced by both La and Fe doping, and it could be enhanced by Fe doping while being suppressed by La doping. And the peak above 1500 nm is enhanced by the cooperation of La and Fe doping. From thermodynamic calculations via an Ellingham diagram, it is found that the parent SrCoO 3 is the most favorable composition for releasing O 2 , with both La and Fe doping hampering the reduction reaction. Therefore, the optical and thermodynamic properties of La x Sr 1- x Co 1- y Fe y O 3- δ could be adjusted by special doping values.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Effect of Sputtering Gas environments on the Properties of Aluminum-doped Zinc Oxide Thin Films for Photovoltaic Application

Aluminum-doped zinc oxide thin films have been deposited on glass substrates by R.F. sputtering using ZnO(98%)-Al{sub 2}O{sub 3}(2%) target in different sputtering gaseous environments, viz., Ar, Ar/O{sub 2} and Ar/N{sub 2}+H{sub 2} at 80 deg. C. These films have been studied with regard to phase, microstructure, optical absorption and sheet resistance for application in photovoltaic devices as transparent conducting electrodes. The properties of the films are shown to strongly depend on the sputtering gas(es). The films exhibit a wurtzite-type hexagonal structure with the (00.2) preferred orientation, the c-axis perpendicular to the substrate. The intensity of 00.2 diffraction peak and the average crystallite size remain almost the same when the films are prepared under pure Ar or Ar/O{sub 2} environment. However the average crystallite size increases while electrical resistance decreases with introduction of nitrogen and hydrogen in comparison to oxygen in argon. Nevertheless, the optimum value of optical transmittance and sheet resistance of the films deposited in pure argon are found to be 85-96% in the wavelength range 400-800 nm and 65 {Omega}/{open_square}, respectively.

14 SOLAR ENERGY↗
DOE OSTI2015

Highly efficient ultrathin-film amorphous silicon solar cells on top of imprinted periodic nanodot arrays

The addressing of the light absorption and conversion efficiency is critical to the ultrathin-film hydrogenated amorphous silicon (a-Si:H) solar cells. We systematically investigate ultrathin a-Si:H solar cells with a 100 nm absorber on top of imprinted hexagonal nanodot arrays. Experimental evidences are demonstrated for not only notable silver nanodot arrays but also lower-cost ITO and Al:ZnO nanodot arrays. The measured external quantum efficiency is explained by the simulation results. The J{sub sc} values are 12.1, 13.0, and 14.3 mA/cm{sup 2} and efficiencies are 6.6%, 7.5%, and 8.3% for ITO, Al:ZnO, and silver nanodot arrays, respectively. Simulated optical absorption distribution shows high light trapping within amorphous silicon layer.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Phase instability and defect induced evolution of optical properties in Cd rich-CdS nanoparticles

Although semiconductor nanostructures exhibit improved physical properties, their structural instability is be a problem for technological applications. This paper reports a temperature-induced low energy phase transformation that occurs in CdS nanoparticles which is ascribed to thermally generated stacking-faults. The phase transformation is found to change the nature of lattice strain in the samples. The formation of this defect-induced lattice strain and its influence on the physical properties of the samples are investigated. The modified optical absorption and emission properties of the samples are thoroughly studied. Using resonance Raman spectroscopy, the evolution of electron-phonon (e-p) coupling strength with structural changes is studied. An explanation to the contradictory nature of e-p coupling strength observed in the nano-regime is given.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗