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At least 685 records · Page 38

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DOE OSTI2017

Facilitation of Ferroelectric Switching via Mechanical Manipulation of Hierarchical Nanoscale Domain Structures

Heterogeneous ferroelastic transition that produces hierarchical 90° tetragonal nanodomains via mechanical loading and its effect on facilitating ferroelectric domain switching in relaxor-based ferroelectrics were explored. Combining in situ electron microscopy characterization and phase-field modeling, we reveal the nature of the transition process and discover that the transition lowers by 40% the electrical loading threshold needed for ferroelectric domain switching. Our results advance the fundamental understanding of ferroelectric domain switching behavior.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2018

Synergy between phase transformation and domain switching in two morphotropic phase boundary ferroelectrics

We present that many applications of ferroic materials take advantage of the microstructural redistribution under an external stimulus. Despite extensive studies on the microstructural evolution during both domain switching and phase transformations of high-performance ferroelectrics near morphotropic phase boundaries (MPBs), the synergetic interactions between both leading factors remain unclear. Herein, we have illustrated and discerned the correlative response of phase transformation and domain switching in an archetypical piezoceramic of PbTiO 3 -BiScO 3 using a combination of in situ high-energy synchrotron x-ray diffraction and phase-field simulations. The direct structural evidence and domain development from simulations reveal a significant reversible orientation-dependent emerging phase transformation and enhanced domain switching. Increasingly populated polarization variants aligned with the applied electric field owing to this strong synergistic interaction play an important role in enhancing the piezoelectric performances of MPB ferroelectrics. Lastly, in addition to providing further insight into the microstructures of ferroelectrics, the present results have the potential to guide the design of high-performance materials.

36 MATERIALS SCIENCE↗

DOE OSTI2019

Chirality switching of an antiferromagnetic spiral wall and its effect on magnetic anisotropy

An antiferromagnetic NiO spiral wall in Fe / NiO / C o 0.5 N i 0.5 O / vicinal Ag(001) was created by rotating Fe magnetization and investigated using x-ray magnetic linear dichroism (XMLD). Different from the Mauri's 180° spiral wall, we find that the NiO spiral wall always switches its chirality at ~ 90 ° rotation of the Fe magnetization, and unwinds the spiral wall back to a single domain with a further rotation of the Fe magnetization from 90° to 180°. The effect of this chirality switching on the magnetic anisotropy was studied using rotational magneto-optic Kerr effect (ROTMOKE) on Py / NiO / C o 0.5 N i 0.5 O / vicinal Ag(001). We find that the original Mauri's model has to be corrected by an energy folding due to the chirality switching, which consequently converts the exchange bias from the Mauri's 180° spiral wall into a uniaxial anisotropy and a negative fourfold anisotropy.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2019

A Simple Control to Reduce Device Over-Voltage Caused by Non-Active Switch Loop in Three-Level ANPC Converters

With the development of wide band-gap (WBG) technology, the switching speed of power semiconductor devices increases, which makes circuits more sensitive to parasitics. For three-level active neutral point clamped (3L-ANPC) converters, the over-voltage caused by additional non-active switch loop can be an issue. This paper analyzes the multiple commutation loops in 3L-ANPC converter and summarizes the impact factors of the device over-voltage. The nonlinearity of the output capacitance of the device can significantly influence the over-voltage. A simple control without introducing additional hardware circuit or complex software algorithm is proposed to attenuate the effect of the nonlinear output capacitance. Multi-pulse test is conducted for a 3L-ANPC converter built with silicon carbide (SiC) MOSFETs. With the proposed control, the testing results show that the peak drain-source voltage of both active and non-active switches is reduced by more than 20% compared to the conventional control.

Gui, Handong↗

DOE OSTI2025

Heat Pipe Enhanced Thermal Management System for GaN Switches in an Integrated Modular Motor Drive for Aircraft Propulsion

This paper presents the process of sizing a heat pipe enhanced thermal management system (TMS) for GaN switches in an integrated modular motor drive (IMMD) powering a 250 kW aircraft propulsion electric motor. A test setup mimicking the TMS and GaN switches assembly is constructed. The condenser chamber of the TMS is modeled in ANSYS Fluent while the GaN switches assembly is modeled in ANSYS Thermal allowing us to verify heat spreader temperature under test conditions and estimate GaN temperatures under test and actual application operating conditions.

DIRECT ENERGY CONVERSION↗

DOE OSTI2018

Performance of High Voltage Bipolar Pulse Generator with Fast Push-Pull Solid-State Switch Modules

Four identical pulse generators (pulsers) provide fast beam deflection in the Low Energy Beam Transport (LEBT) beam chopping system at the Spallation Neutron Source (SNS) Linac. The existing pulsers have become obsolete and need to be replaced to improve overall performance of the chopper system. A new bipolar pulse generator has been designed, and a prototype has been built and tested at the SNS. The generator uses fast push-pull transistor BEHLKE switch modules. It can produce a 1MHz burst of alternate 2.5kV with adjustable pulse widths during the 1-ms macro-pulse at a burst repetition frequency of 60Hz with rise/fall times of less than 40ns into a 100pF capacitive load. The performance enhancements of this new pulser in comparison with existing and previous versions of the pulse generator are discussed in the paper. The pulser can be used in applications requiring a series of bipolar ±3.5kV pulses, or unipolar pulses of positive or negative polarity with amplitude up to 4.5kV and various pulse widths with a minimum of 150ns. The maximum switching frequency, number of pulses, or burst repetition frequency in burst mode is limited by maximum power dissipation in the switches and other components. The features of this new pulser along with the results of timing control adjustments, timing and temperature measurements, and HV full power testing on the test stand are presented.

Peplov, Vladimir↗

DOE OSTI2019

A 4×4 electrooptic silicon photonic switch fabric with net neutral insertion loss

We present a strictly nonblocking 4×4 electrooptic silicon photonic switch fabric with on-chip gain. The switch integrates 12 Mach-Zehnder cells in a 3-stage topology equipped with fast electrooptic phase shifters, and thermooptic phase trimmers. To compensate for the losses of the fabric, a 4-channel GaInAsP/InP semiconductor optical amplifier array is flip-chip attached into an etched cavity in the silicon photonic chip with butt-coupled waveguide interfaces. The chip is wirebonded to a CMOS driver that provides push-pull drive to each elementary Mach-Zehnder cell. We demonstrate an optical switch assembly with net neutral insertion loss in the C-band together with nanosecond-scale reconfiguration time.

42 ENGINEERING↗

DOE OSTI2022

Deep Reinforcement Learning for Distribution System Restoration Using Distributed Energy Resources and Tie-Switches

Distributed energy resources (DERs), such as solar PVs and energy storage, can be used to restore distribution system critical loads after the extreme weather events to increase grid resilience. However, coordinating multiple DERs together with tie-switches for multi-step restoration process under renewable uncertainty is challenging. This paper proposes a deep reinforcement learning to control discrete actions of switching on/off tie switches and DERs for critical load restoration. The restoration problem is first cast into the Markov decision process suitable for DRL. Then, the original soft actor critic (SAC) method for continuous actions has been extended to handle discrete and continuous actions. Numerical comparison results with other stochastic optimization-based approaches on the modified IEEE 33-bus system show that the proposed method can achieve fast critical load restoration in the presence of substation power outage while maintaining system voltage limit throughout the restoration process.

active distribution systems↗

DOE OSTI2025

A High-Voltage High-Current Benchtop Test Stand for Solid-State Switch Testing at the SNS

Solid-state switches already replaced thyratrons in the SNS extraction kicker power supplies, offering improved efficiency and reliability. However, recent supply chain disruptions, combined with a self-firing issue, led us to explore alternative solutions. A vendor-developed MOS-Gated Thyristor switch was introduced but ultimately failed during testing. To investigate the failure and assess possible improvements, a benchtop test stand was constructed to evaluate the performance of a single stage board. This test stand features a Pulse Forming Network (PFN) that operates at 6 kV and 6 kA, with a repetition rate exceeding 60 Hz, simulating real operational conditions. By utilizing this setup, we seek to gain a better understanding of the failure mechanisms, refine the switch designs, and ultimately develop a more reliable alternative for the extraction kicker power supplies.

Bullman, Austin [ORNL]↗

DOE OSTI2019

Two-Level Switches for Advanced Time-Division Multiplexing

Superconducting quantum interference device (SQUID)-based time-division multiplexing (TDM) is a mature and widely implemented technology used to read out transition-edge sensor arrays. As the number of pixels in modern arrays continues to increase, a higher multiplexing factor is required to reduce the number of wires and amplifier channels. Yet, as the multiplexing factor is increased, the number of row-select wires (used to turn on a row of TDM SQUIDs in a two-dimensional configuration) also increases, limiting the reduction in array wires. We introduce a more advanced TDM architecture that enforces multi-level switching between subgroups of pixels. We show that this technique can dramatically reduce the number of required row-select lines. We also present the design, fabrication, and testing of a TDM multiplexer incorporating a two-level switch, which implements a second switch for each group of ten TDM pixels. In this application, a multiplexing factor of 100 can be addressed using ten group-select wiring pairs and ten row-select wiring pairs. We demonstrate multiplexer functionality and present measured operating margins of this new TDM multiplexer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

Atomic-Scale Imaging of Polarization Switching in an (Anti-)Ferroelectric Memory Material: Zirconia (ZrO2)

Direct, atomic-scale visualization of polarization switching in a functional, polycrystalline, binary oxide via in-situ high-resolution transmission electron microscopy (HRTEM) biasing is reported for the first time. Antiferroelectric (AFE) ZrO2 was used as the model system, which is important for commercial DRAMs and as emerging NVMs (through work-function engineering). We observed (1) clear shifting and coalescing of domains within a single grain, and (2) dramatic changes of the atomic arrangements and crystalline phases—both at voltages above the critical voltage measured for AFE switching. Similar synergistic in-situ structural-electrical characterization can pave the way to understand and engineer microscopic mechanisms for retention, fatigue, variability, sub-coercive switching and analog states in ferroelectric and AFE-based memory devices.

Lombardo, Sarah↗

DOE OSTI2017

A reversible single-molecule switch based on activated antiaromaticity

Single-molecule electronic devices provide researchers with an unprecedented ability to relate novel physical phenomena to molecular chemical structures. Typically, conjugated aromatic molecular backbones are relied upon to create electronic devices, where the aromaticity of the building blocks is used to enhance conductivity. We capitalize on the classical physical organic chemistry concept of Hückel antiaromaticity by demonstrating a single-molecule switch that exhibits low conductance in the neutral state and, upon electrochemical oxidation, reversibly switches to an antiaromatic high-conducting structure. We form single-molecule devices using the scanning tunneling microscope–based break-junction technique and observe an on/off ratio of ~70 for a thiophenylidene derivative that switches to an antiaromatic state with 6-4-6-p electrons. Through supporting nuclear magnetic resonance measurements, we show that the doubly oxidized core has antiaromatic character and we use density functional theory calculations to rationalize the origin of the high-conductance state for the oxidized single-molecule junction. Together, our work demonstrates how the concept of antiaromaticity can be exploited to create single-molecule devices that are highly conducting.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Thin film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity

A design concept of phase-separated amorphous nanocomposite thin films is presented that realizes interfacial resistive switching (RS) in hafnium-oxide-based devices. The films are formed by incorporating an average of 7% Ba into hafnium oxide during pulsed laser deposition at temperatures ≤400°C. The added Ba prevents the films from crystallizing and leads to ~20-nm-thin films consisting of an amorphous HfO x host matrix interspersed with ~2-nm-wide, ~5-to-10-nm-pitch Ba-rich amorphous nanocolumns penetrating approximately two-thirds through the films. This restricts the RS to an interfacial Schottky-like energy barrier whose magnitude is tuned by ionic migration under an applied electric field. Resulting devices achieve stable cycle-to-cycle, device-to-device, and sample-to-sample reproducibility with a measured switching endurance of ≥10 4 cycles for a memory window ≥10 at switching voltages of ±2 V. Each device can be set to multiple intermediate resistance states, which enables synaptic spike-timing–dependent plasticity. The presented concept unlocks additional design variables for RS devices.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Ferroelectric FET-based context-switching FPGA enabling dynamic reconfiguration for adaptive deep learning machines

Field programmable gate array (FPGA) is widely used in the acceleration of deep learning applications because of its reconfigurability, flexibility, and fast time-to-market. However, conventional FPGA suffers from the trade-off between chip area and reconfiguration latency, making efficient FPGA accelerations that require switching between multiple configurations still elusive. Here, we propose a ferroelectric field-effect transistor (FeFET)–based context-switching FPGA supporting dynamic reconfiguration to break this trade-off, enabling loading of arbitrary configuration without interrupting the active configuration execution. Leveraging the intrinsic structure and nonvolatility of FeFETs, compact FPGA primitives are proposed and experimentally verified. The evaluation results show our design shows a 63.0%/74.7% reduction in a look-up table (LUT)/connection block (CB) area and 82.7%/53.6% reduction in CB/switch box power consumption with a minimal penalty in the critical path delay (9.6%). Besides, our design yields significant time savings by 78.7 and 20.3% on average for context-switching and dynamic reconfiguration applications, respectively.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2021

Two TonB-dependent transporters in Methylosinus trichosporium OB3b are responsible for uptake of different forms of methanobactin and are involved in the canonical ‘copper switch’

Copper is an important component of methanotrophic physiology as it controls the expression and activity of alternative forms of methane monooxygenase (MMO). To collect copper, some methanotrophs secrete a chalkophore or copper-binding compound called methanobactin (MB). MB is a ribosomally synthesized post-translationally modified polypeptide (RiPP) that, after binding copper, is collected by MbnT, a TonB-dependent transporter (TBDT). Structurally different forms of MB have been characterized, and here we show that different forms of MB are collected by specific TBDTs. Further, we report that in the model methanotroph, Methylosinus trichosporium OB3b, expression of the TBDT required for uptake of a different MB made by Methylocystis sp. strain SB2 (MB-SB2), is induced in the presence of MB-SB2, suggesting that methanotrophs have developed specific machinery and regulatory systems to actively take up MB from other methanotrophs for copper collection. Moreover, the canonical “copper-switch” in Ms. trichosporium OB3b that controls expression of alternative MMOs is apparent if one of the two TBDTs required for MB-OB3b and MB-SB2 uptake is knocked out, but is disrupted if both TBDTs are knocked out. Furthermore, these data indicate that MB uptake, including the uptake of exogenous MB, plays an important role in the copper switch in M. trichosporium OB3b and thus overall activity. Based on these data, we propose a revised model for the “copper-switch” in this methanotroph that involves MB uptake.

54 ENVIRONMENTAL SCIENCES↗

DOE OSTI2025

CsrA-mediated regulation of a virulence switch in Acinetobacter baumannii

CsrA is an RNA binding protein that functions as a global regulator in bacteria. We demonstrate that, in Acinetobacter baumannii, CsrA acts as a positive regulator of the switch from virulent (VIR-O) to avirulent (AV-T) subpopulations. This regulation is mediated, in part, by CsrA interfering with Rho-dependent termination in the mRNA leader region of the ABUW_1645 gene, encoding the primary TetR-type transcriptional regulator that drives cells from the VIR-O to the AV-T state. We demonstrate that CsrA directly binds to the ABUW_1645 mRNA leader region and interferes with Rho binding. We identify three small RNAs (sRNAs) designated CsrB, CsrC, and CsrD that bind to CsrA and inhibit its activity. Individual overexpression of each sRNA greatly decreased the rate of VIR-O to AV-T switching. Individual deletions of each sRNA increased the frequency of VIR-O to AV-T switching, with loss of CsrB giving the highest increase at 2.4-fold. The expression of each sRNA was strongly dependent on the GacA response regulator and the expression of each sRNA was higher in VIR-O cells than in AV-T variants. Furthermore, this regulation provides a mechanism for the differential control of CsrA activity between VIR-O and AV-T variants.

59 BASIC BIOLOGICAL SCIENCES↗

DOE OSTI2019

Effective Velocity of the State Switching Front in a Quasi-One-Dimensional Nanosystem upon Multiple New-Phase Domain Formation

The kinetics of state switching fronts plays an important role in controlling nanodevices and the properties of many quasi-one-dimensional objects in physics, chemistry, and biology. In active media, this process is accompanied by the interaction of the state switching front with excitations in the bulk of the material. The propagation of the metastable-state switching front from the sample boundary with the absorption of spontaneously forming new-phase domains in the bulk is considered. The corresponding statistical-kinetic problem is solved by calculating the distribution functions of the “relay-race” path lengths and travel times for the edge-domain boundary. The related problem of the influence of uncontrolled noise on the propagation of signals in transmission lines is discussed.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2015

Avalanche mode of high-voltage overloaded p{sup +}–i–n{sup +} diode switching to the conductive state by pulsed illumination

A simple analytical theory of the picosecond switching of high-voltage overloaded p{sup +}–i–n{sup +} photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs.

36 MATERIALS SCIENCE↗