Suppression of Polyfluorene Photo-Oxidative Degradation via Encapsulation of Single-Walled Carbon Nanotubes
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We report the synthesis and characterization of new alkyl-substituted 1,4-di(thiophen-2-yl)buta-1,3-diyne (R-DTB) donor building blocks, based on the -C≡C-C≡C- conjugative pathway, and their incorporation with thienyl-diketopyrrolopyrrole (R'-TDPP) acceptor units into π-conjugated PTDPP-DTB polymers (P1-P4). The solubility of the new polymers strongly depends on the DTB and DPP solubilizing (R and R', respectively) substituents. Thus, solution processable and high molecular weight PDPP-DTB polymers are achieved for P3 (R = n-C12H25, R' = 2- butyloctyl) and P4 (R = 2-ethylhexyl, R' = 2-butyloctyl). Systematic studies of P3 and P4 physicochemical properties are carried using optical spectroscopy, cyclic voltammetry, and thermal analysis, revealing characteristic features of the dialkynyl motif. For the first time, optoelectronic devices (OFETs, OPVs) are fabricated with 1,3-butadiyne containing organic semiconductors. OFET hole mobilities and record OPV power conversion efficiencies for acetylenic organic materials approach 0.1 cm2/(V s) and 4%, respectively, which can be understood from detailed thin-film morphology and microstructural characterization using AFM, TEM, XRD, and GIWAXS methodologies. Importantly, DTB-based polymers (P3 and P4) exhibit, in addition to stabilization of frontier molecular orbitals and to -C≡C-C≡C- relief of steric torsions, discrete morphological pliability through thermal annealing and processing additives. The advantageous materials properties and preliminary device performance reported here demonstrate the promise of 1,3-butadiyne-based semiconducting polymers.
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The copper(II) complex Cu(pyalk) 2 (pyalk = 2-pyridyl-2-propanoate) is a robust homogeneous water-oxidation electrocatalyst under basic conditions (pH > 10.4). Water oxidation occurs at a relatively low overpotential for copper of 520–580 mV with a turnover frequency of ~0.7 s –1 . Controlled potential electrolysis experiments over 12 h at 1.1 V vs NHE resulted in the formation of >30 catalytic turnovers of O 2 with only ~20% catalyst degradation. The robustness of the catalyst under fairly harsh conditions and the low overpotential further highlight the oxidation resistance and strong donor character of pyalk.
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Sn-based halide perovskite materials have attracted tremendous attention and have been employed successfully in solar cells. However, their high conductivities resulting from the unstable divalent Sn state in the structure cause poor device performance and poor reproducibility. Herein, we used excess tin iodide (SnI 2 ) in Sn-based halide perovskite solar cells (ASnI 3 , A = Cs, methylammonium and formamidinium tin iodide as the representative light absorbers), combined with a reducing atmosphere to stabilize the Sn 2+ state. Excess SnI 2 can disperse uniformly into the perovskite films and functions as a compensator as well as a suppressor of Sn 2+ vacancies thereby effectively reducing the p-type conductivity. This process significantly improved the solar-cell performances of all the ASnI3 materials on mesoporous TiO 2 . Optimized CsSnI3 devices achieved a maximum power conversion efficiency of 4.81%, which is the highest among all inorganic Pb-free perovskite solar cells to date.
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The field of nanoscience is delivering increasingly intricate yet elegant geometric structures incorporating an ever-expanding palette of materials. Atomic layer deposition (ALD) is a powerful driver of this field, providing exceptionally conformal coatings spanning the periodic table and atomic-scale precision independent of substrate geometry. This versatility is intrinsic to ALD and results from sequential and self-limiting surface reactions. This characteristic facilitates digital synthesis, in which the film grows linearly with the number of reaction cycles. While the majority of ALD processes identified to date produce metal oxides, novel applications in areas such as energy storage, catalysis, and nanophotonics are motivating interest in sulfide materials. Recent progress in ALD of sulfides has expanded the diversity of accessible materials as well as a more complete understanding of the unique chalcogenide surface chemistry.