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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

High Average Current Bunched Electron Source for RF Accelerators

High-average current high-quality electron beams are imperative for high-power RF accelerators used in various energy and environmental applications in industry, medicine, and national security as well as for advanced existing and future accelerator systems such as PIP II, particle colliders (eRHIC BNL) for cooling high-energy proton, ion, and hadron beams, storage rings, wakefield accelerators (AWA), and energy recovery linacs. The most common current approach to generate high-peak current high-brightness short electron bunches uses photoemission excited by intense laser radiation. However, to avoid overheating photocathodes are operated at a subharmonic of the linac frequency that in turn restricts the average beam current. There are also limitations in the electron-beam average current due to the average power available from drive lasers. On the other hand, the state of the art thermionic sources that produce high average current electron beams do not have yet good emission gating methods to realize sufficiently short and good quality electron bunches. We develop a robust thermionic electron source (e-source) of >1 A average current with advanced gating of the emission at the linac-frequency and its 3rd harmonic. Central to the approach is a novel scheme for energy efficient feeding of the 3rd-harmonic power in the RF gap. The cathode is attached to the gun cavity through this small emission-gating gap in which the RF modes are excited. The use of thermionic emission allows for the desired high-average current CW electron beams. Adding the 3rd emission gating harmonic shortens the electron bunches and by this means lessens impact of the RF curvature on the beam quality resulting in the smaller energy spread and bunch emittances. Such high current electron beam is suitable for injection into high-power normal- or superconducting linacs in CW mode at a high repetition rate of the linac frequency. In Phase I, we performed modeling and beam dynamics, parametric, and optimization studies. A >1A average current e-source with 200,000hrs lifetime expectancy has been demonstrated in the simulations. We have developed baseline design of the e-source and its components. It is anticipated that the e-source will be in demand for normal- and superconducting particle accelerators and will benefit many commercial and energy and environmental applications such as treating waste and potable water, sludge, stack gases, and medical waste as well as X-ray sources for medicine, sterilization, materials processing, geology, and non-intrusive imaging.

43 PARTICLE ACCELERATORS↗
DOE OSTI2023

The transition from field emission to collisional space-charge limited current with nonzero initial velocity

Abstract Multiple electron emission mechanisms often contribute in electron devices, motivating theoretical studies characterizing the transitions between them. Previous studies unified thermionic and field emission, defined by the Richardson-Laue-Dushman (RLD) and Fowler–Nordheim (FN) equations, respectively, with the Child-Langmuir (CL) law for vacuum space-charge limited current (SCLC); another study unified FN and CL with the Mott-Gurney (MG) law for collisional SCLC. However, thermionic emission, which introduces a nonzero injection velocity, may also occur in gas, motivating this analysis to unify RLD, FN, CL, and MG. We exactly calculate the current density as a function of applied voltage over a range of injection velocity (i.e., temperature), mobility, and gap distance. This exact solution approaches RLD, FN, and generalized CL (GCL) and MG (GMG) for nonzero injection velocity under appropriate limits. For nonzero initial velocity, GMG approaches zero for sufficiently small applied voltage and mobility, making these gaps always space-charge limited by either GMG at low voltage or GCL at high voltage. The third-order nexus between FN, GMG, and GCL changes negligibly from the zero initial velocity calculation over ten orders of magnitude of applied voltage. These results provide a closed form solution for GMG and guidance on thermionic emission in a collisional gap.

42 ENGINEERING↗
DOE OSTI2020

Laser-metal interaction dynamics during additive manufacturing resolved by detection of thermally-induced electron emission

In situ monitoring is required to improve the understanding and increase the reliability of additive manufacturing methods such as laser powder bed fusion (LPBF). Current diagnostic methods for LPBF capture optical images, X-ray radiographs, or measure the emission of thermal or acoustic signals from the component. Herein, a methodology based on the thermal emission of electrons - thermionic emission - from the metal surface during LPBF is proposed which can resolve laser-material interaction dynamics. The high sensitivity of thermionic emission to surface temperature and surface morphology is revealed to enable precise determination of the transition between conduction and keyhole mode melting regimes. Increases in thermionic emission are correlated to laser scanning conditions that give rise to pore formation and regions where surface defects are pronounced. The information presented here is a critical step in furthering our understanding and validation of laser-based metal additive manufacturing.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Stability and Viability of Off-Axis Photoemission Geometries in 4D Ultrafast Electron Microscopy

Femtosecond (fs) laser-based 4D ultrafast electron microscopy (UEM) commonly makes use of photoelectron emission from a source material in the electron gun region of an otherwise conventional TEM. For TEMs equipped with thermionic guns, the source material is often LaB 6 , the same as used for thermionic operation. Here, such thermionic-based UEMs have proven useful for applications requiring large electron fluxes (i.e., high beam currents) often at the expense of beam coherence and brightness, which is especially important for single-shot nanosecond applications. Importantly, for fs-based UEMs, beam currents can be controlled over a broad range of parameter space through the properties of the fs laser and the photon pulses produced therefrom.

Willis, Simon A. [University of Minnesota, Minneap↗
DOE OSTI2016

TH-CD-207B-01: BEST IN PHYSICS (IMAGING): Development of High Brightness Multiple-Pixel X-Ray Source Using Oxide Coated Cathodes

Purpose: To develop and characterize a high brightness multiple-pixel thermionic emission x-ray (MPTEX) source. Methods: Multiple-pixel x-ray sources allow for designs of novel x-ray imaging techniques, such as fixed gantry CT, digital tomosynthesis, tetrahedron beam computed tomography, etc. We are developing a high-brightness multiple-pixel thermionic emission x-ray (MPTEX) source based on oxide coated cathodes. Oxide cathode is chosen as the electron source due to its high emission current density and low operating temperature. A MPTEX prototype has been developed which may contain up to 41 micro-rectangular oxide cathodes in 4 mm pixel spacing. Electronics hardware was developed for source control and switching. The cathode emission current was evaluated and x-ray measurements were performed to estimate the focal spot size. Results: The oxide cathodes were able to produce ∼110 mA cathode current in pulse mode which corresponds to an emission current density of 0.55 A/cm{sup 2}. The maximum kVp of the MPTEX prototype currently is limited to 100 kV due to the rating of high voltage feedthrough. Preliminary x-ray measurements estimated the focal spot size as 1.5 × 1.3 mm{sup 2}. Conclusion: A MPTEX source was developed with thermionic oxide coated cathodes and preliminary source characterization was successfully performed. The MPTEX source is able to produce an array of high brightness x-ray beams with a fast switching speed.

60 APPLIED LIFE SCIENCES↗
NASA NTRS1983

Simplified Heat-Source/Thermionic Converter

Radiation coupling of heat from heat-source cylinder to converter cylinder through vacuum gap eliminates need for high-temperature electrical insulators between reactor heat pipes and thermionic converters. In addition no radiatior heat pipe is necessary because collectors of thermionic converters from which excess heat must be removed radiate directly to space. New design concept is also applicable to terrestrial and non-nuclear thermionic power supplies.

Shimada, K.↗
NASA NTRS1991

Space nuclear power systems; Proceedings of the 8th Symposium, Albuquerque, NM, Jan. 6-10, 1991. Pts. 1-3

The present conference discusses NASA mission planning for space nuclear power, lunar mission design based on nuclear thermal rockets, inertial-electrostatic confinement fusion for space power, nuclear risk analysis of the Ulysses mission, the role of the interface in refractory metal alloy composites, an advanced thermionic reactor systems design code, and space high power nuclear-pumped lasers. Also discussed are exploration mission enhancements with power-beaming, power requirement estimates for a nuclear-powered manned Mars rover, SP-100 reactor design, safety, and testing, materials compatibility issues for fabric composite radiators, application of the enabler to nuclear electric propulsion, orbit-transfer with TOPAZ-type power sources, the thermoelectric properties of alloys, ruthenium silicide as a promising thermoelectric material, and innovative space-saving device for high-temperature piping systems. The second volume of this conference discusses engine concepts for nuclear electric propulsion, nuclear technologies for human exploration of the solar system, dynamic energy conversion, direct nuclear propulsion, thermionic conversion technology, reactor and power system control, thermal management, thermionic research, effects of radiation on electronics, heat-pipe technology, radioisotope power systems, and nuclear fuels for power reactors. The third volume discusses space power electronics, space nuclear fuels for propulsion reactors, power systems concepts, space power electronics systems, the use of artificial intelligence in space, flight qualifications and testing, microgravity two-phase flow, reactor manufacturing and processing, and space and environmental effects.

El-Genk, Mohamed S.↗
NASA NTRS1992

An analysis of the temperature dependence of the gate current in complementary heterojunction field-effect transistors

The temperature dependence of the gate current versus the gate voltage in complementary heterojunction field-effect transistors (CHFET's) is examined. An analysis indicates that the gate conduction is due to a combination of thermionic emission, thermionic-field emission, and conduction through a temperature-activated resistance. The thermionic-field emission is consistent with tunneling through the AlGaAs insulator. The activation energy of the resistance is consistent with the ionization energy associated with the DX center in the AlGaAs. Methods reducing the gate current are discussed.

Cunningham, Thomas J.↗
DOE OSTI2011

Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

InN/GaN heterostructure based Schottky diodes were fabricated by plasma-assisted molecular beam epitaxy. The temperature dependent electrical transport properties were carried out for InN/GaN heterostructure. The barrier height and the ideality factor of the Schottky diodes were found to be temperature dependent. The temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. The higher value of the ideality factor and its temperature dependence suggest that the current transport is primarily dominated by thermionic field emission (TFE) other than thermionic emission (TE). The room temperature barrier height obtained by using TE and TFE models were 1.08 and 1.43 eV, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

A comparative study of the electrical properties of Pd/ZnO Schottky contacts fabricated using electron beam deposition and resistive/thermal evaporation techniques

A systematic investigation to check the quality of Pd Schottky contacts deposited on ZnO has been performed on electron beam (e-beam) deposited and resistively/thermally evaporated samples using current-voltage, IV, and conventional deep level transient spectroscopy (DLTS) measurements. Room temperature IV measurements reveal the dominance of pure thermionic emission on the resistively evaporated contacts, while the e-beam deposited contacts show the dominance of generation recombination at low voltages, <0.30 V, and the dominance of pure thermionic emission at high voltages, greater than 0.30 V. The resistively evaporated contacts have very low reverse currents of the order of 10{sup -10} A at a reverse voltage of 1.0 V whereas the e-beam deposited contacts have reverse currents of the order of 10{sup -6} A at 1.0 V. Average ideality factors have been determined as (1.43 {+-} 0.01) and (1.66 {+-} 0.02) for the resistively evaporated contacts and e-beam deposited contacts, respectively. The IV barrier heights have been calculated as (0.721 {+-} 0.002) eV and (0.624 {+-} 0.005) eV for the resistively evaporated and e-beam deposited contacts, respectively. Conventional DLTS measurements reveal the presence of three prominent defects in both the resistive and e-beam contacts. Two extra peaks with energy levels of 0.60 and 0.81 eV below the conduction band minimum have been observed in the e-beam deposited contacts. These have been explained as contributing to the generation recombination current that dominates at low voltages and high leakage currents. Based on the reverse current at 1.0 V, the degree of rectification, the dominant current transport mechanism and the observed defects, we conclude that the resistive evaporation technique yields better quality Schottky contacts for use in solar cells and ultraviolet detectors compared to the e-beam deposition technique. The 0.60 eV has been identified as possibly related to the unoccupied level for the doubly charged oxygen vacancy, V{sub o}{sup 2+}.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Quantum effects in electron emission from and accretion on negatively charged spherical particles in a complex plasma

The authors have investigated the electron emissions (thermionic, electric field, photoelectric, and light induced field) from and electron accretion on a charged particle in a complex plasma, on the basis of a three region electrical potential model in and around a charged spherical particle in a complex plasma, characterized by Debye shielding. A continuous variation of the transmission coefficient across the surface of a particle (corresponding to emission and accretion) with the radial electron energy {epsilon}{sub r} has been obtained. It is seen that the numerical values of the emission and accretion transmission coefficients [D({epsilon}{sub r})] are almost the same. This is the necessary and sufficient condition for the validity of Saha's equation for thermal equilibrium of a system of dust and electrons. This is in contrast to the earlier condition, which limited the range of validity of Saha's equation to the range of the applicability of Born approximation. It is seen that D({epsilon}{sub r}) increases with increasing {epsilon}{sub r}, increasing negative electric potential on the surface, decreasing radius, and deceasing Debye length. The electron currents, corresponding to thermionic, electric field, photoelectric and light induced field emission increase with increasing surface potential; this fact may have significant repercussions in complex plasma kinetics. Since numerically D({epsilon}{sub r}) is significantly different from unity in the range of {epsilon}{sub r} of interest, it is necessary to take into account the D({epsilon}{sub r})-{epsilon}{sub r} dependence in complex plasma theory.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

Bohm velocity in the presence of a hot cathode

The spatial distribution of the plasma and beam electrons in a region whose extension from a hot cathode is larger than the Debye length, but smaller than the electron mean free path, is analyzed. In addition, the influence of electrons thermionically emitted from a hot cathode and the ratio of electron-to-ion mass on the Bohm velocity and on the ion and electron densities at the plasma-sheath boundary in a gas discharge are studied. It is shown that thermionic emission has the effect of increasing the Bohm velocity, and this effect is more pronounced for lighter ions. In addition, it is shown that the Bohm velocity cannot be increased to more than 24% above its value when there is no electron emission.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Temperature dependent electrical transport studies of self-aligned ZnO nanorods/Si heterostructures deposited by sputtering

Self-aligned ZnO nanorods (NRs) were grown on n-Si(100) substrate by RF sputtering techniques. The NRs are uniformly grown on 2-inch wafer along [0001] direction. Single-crystalline wurtzite structure of ZnO NRs was confirmed by X-ray diffraction. The average diameter, height, and density of NRs are found 48 nm, 750 nm, and 1.26 × 10{sup 10} cm{sup −2}, respectively. The current-voltages (I-V) characteristics of ZnO NRs/Si heterojunction (HJ) were studied in the temperature range of 120–300 K and it shows a rectifying behavior. Barrier height (ϕ{sub B}) and ideality factor (η) were estimated from thermionic emission model and found to be highly temperature dependent in nature. Richardson constant (A{sup *}) was evaluated using Richardson plot of ln(I{sub o}/T{sup 2}) versus q/kT plot by linear fitting in two temperature range 120–180 K and 210–300 K. Large deviation in Richardson constant from its theoretical value of n-Si indicates the presence of barrier inhomogeneities at HJ. Double Gaussian distribution of barrier height with thermionic equation gives mean barrier heights of 0.55 ± 0.01 eV and 0.86 ± 0.02 eV for two different temperature regions 120–180 K and 210–300 K, respectively. Modified Richardson plot provided two values of Richardson constant for two temperature regions. However, for higher temperature range (210–300 K), the calculated value of Richardson constant ∼123 A cm{sup −2} K{sup −2} was close to the ideal Richardson constant for n-Si.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Investigation of effective base transit time and current gain modulation of light-emitting transistors under different ambient temperatures

In this report, the modulation of current gain of InGaP/GaAs light-emitting transistors under different ambient temperatures are measured and analyzed using thermionic emission model of quantum well embedded in the transistor base region. Minority carriers captured by quantum wells gain more energy at high temperatures and escape from quantum wells resulting in an increase of current gain and lower optical output, resulting in different I-V characteristics from conventional heterojunction bipolar transistors. The effect of the smaller thermionic lifetime thus reduces the effective base transit time of transistors at high temperatures. The unique current gain enhancement of 27.61% is achieved when operation temperature increase from 28 to 85 °C.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Vertical electron transport in van der Waals heterostructures with graphene layers

We propose and analyze an analytical model for the self-consistent description of the vertical electron transport in van der Waals graphene-layer (GL) heterostructures with the GLs separated by the barriers layers. The top and bottom GLs serve as the structure emitter and collector. The vertical electron transport in such structures is associated with the propagation of the electrons thermionically emitted from GLs above the inter-GL barriers. The model under consideration describes the processes of the electron thermionic emission from and the electron capture to GLs. It accounts for the nonuniformity of the self-consistent electric field governed by the Poisson equation which accounts for the variation of the electron population in GLs. The model takes also under consideration the cooling of electrons in the emitter layer due to the Peltier effect. We find the spatial distributions of the electric field and potential with the high-electric-field domain near the emitter GL in the GL heterostructures with different numbers of GLs. Using the obtained spatial distributions of the electric field, we calculate the current-voltage characteristics. We demonstrate that the Peltier cooling of the two-dimensional electron gas in the emitter GL can strongly affect the current-voltage characteristics resulting in their saturation. The obtained results can be important for the optimization of the hot-electron bolometric terahertz detectors and different devices based on GL heterostructures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Barrier inhomogeneities and electronic transport of Pt contacts to relatively highly doped n-type 4H-SiC

The barrier characteristics of Pt contacts to relatively highly doped (∼1 × 10{sup 18 }cm{sup −3}) 4H-SiC were investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements in the temperature range of 160–573 K. The barrier height and ideally factor estimated from the I-V characteristics based on the thermionic emission model are abnormally temperature-dependent, which can be explained by assuming the presence of a double Gaussian distribution (GD) of inhomogeneous barrier heights. However, in the low temperature region (160–323 K), the obtained mean barrier height according to GD is lower than the actual mean value from C-V measurement. The values of barrier height determined from the thermionic field emission model are well consistent with those from the C-V measurements, which suggest that the current transport process could be modified by electron tunneling at low temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Carrier lifetimes and interface recombination velocities in CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructures with different Mg compositions grown by molecular beam epitaxy

The interface recombination velocities of CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg{sub 0.46}Cd{sub 0.54}Te interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Detection of alpha particles using DNA/Al Schottky junctions

Deoxyribonucleic acid or DNA can be utilized in an organic-metallic rectifying structure to detect radiation, especially alpha particles. This has become much more important in recent years due to crucial environmental detection needs in both peace and war. In this work, we fabricated an aluminum (Al)/DNA/Al structure and generated current–voltage characteristics upon exposure to alpha radiation. Two models were utilized to investigate these current profiles; the standard conventional thermionic emission model and Cheung and Cheung's method. Using these models, the barrier height, Richardson constant, ideality factor and series resistance of the metal-DNA-metal structure were analyzed in real time. The barrier height, Φ value calculated using the conventional method for non-radiated structure was 0.7149 eV, increasing to 0.7367 eV after 4 min of radiation. Barrier height values were observed to increase after 20, 30 and 40 min of radiation, except for 6, 8, and 10 min, which registered a decrease of about 0.67 eV. This was in comparison using Cheung and Cheung's method, which registered 0.6983 eV and 0.7528 eV for the non-radiated and 2 min of radiation, respectively. The barrier height values, meanwhile, were observed to decrease after 4 (0.61 eV) to 40 min (0.6945 eV). The study shows that conventional thermionic emission model could be practically utilized for estimating the diode parameters including the effect of series resistance. These changes in the electronic properties of the Al/DNA/Al junctions could therefore be utilized in the manufacture of sensitive alpha particle sensors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗