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At least 685 records · Page 38

Advanced data mining in field ion microscopy

Field ion microscopy (FIM) allows to image individual surface atoms by exploiting the effect of an intense electric field. Widespread use of atomic resolution imaging by FIM has been hampered by a lack of efficient image processing/data extraction tools. Recent advances in imaging and data mining techniques have renewed the interest in using FIM in conjunction with automated detection of atoms and lattice defects for materials characterization. After a brief overview of existing routines, we review the use of machine learning (ML) approaches for data extraction with the aim to catalyze new data-driven insights into high electrical field physics. Apart from exploring various supervised and unsupervised ML algorithms in this context, we also employ advanced image processing routines for data extraction from large sets of FIM images. The outcomes and limitations of such routines are discussed, and we conclude with the possible application of energy minimization schemes to the extracted point clouds as a way of improving the spatial resolution of FIM.

36 MATERIALS SCIENCE↗

Dopant Compensation within the Intrinsic Poly-Si Isolation Region in Poly-Si/SiOx Passivated IBC Si Solar Cells

We report on the effect of dopant compensation within intrinsic poly-Si regions between p- and n-type fingers of poly-Si/SiOx passivated interdigitated back contact (IBC) solar cells using intrinsic poly-Si as the isolation region between the doped poly-Si fingers. First, we show that dopants from the doped fingers contaminate the intrinsic gap, resulting in doping of the entire intrinsic gap and overlap of the dopant tails from each finger. Next, we show that despite this doping across the gap, shunting between the doped fingers does not occur. We show that this is a result of trap-assisted compensation creating a highly resistive intrinsic region, preventing shunt. We simulate shunt resistance across the gap based on local carrier concentration and deep trap density. We show that trap defects within the poly-Si enhance compensation between the dopant tails. We experimentally confirm these predictions by scanning spreading resistance microscopy of the gap showing ~20 um domain with resistivity ~10^7 ..omega.. cm. Additionally, Kelvin probe force microscopy are compared to finite element simulations which result in the same approximate shape for potential profile, indicating diode behavior across the isolation region. These results demonstrate the powerful effect that trap defects have within the poly-Si isolation region and suggest that precision patterning is not as essential as once thought.

dopant compensation↗

Direct detection of spontaneous polarization in wurtzite GaAs nanowires

We demonstrate the direct detection of spontaneous polarization in the wurtzite crystal phase of gallium-arsenide (GaAs) nanowires. Using differential phase contrast microscopy (DPC) in a scanning transmission electron microscope, we map the differences in charge distribution between the zinc-blende and wurtzite crystal phases and use twin defects in the zinc-blende phase to quantify the polarization strength. The value of 2.7 × 10{sup −3} C/m{sup 2} found for the polarization strength matches well with theoretical predictions.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Large-scale epitaxial growth kinetics of graphene: A kinetic Monte Carlo study

Epitaxial growth via chemical vapor deposition is considered to be the most promising way towards synthesizing large area graphene with high quality. However, it remains a big theoretical challenge to reveal growth kinetics with atomically energetic and large-scale spatial information included. Here, we propose a minimal kinetic Monte Carlo model to address such an issue on an active catalyst surface with graphene/substrate lattice mismatch, which facilitates us to perform large scale simulations of the growth kinetics over two dimensional surface with growth fronts of complex shapes. A geometry-determined large-scale growth mechanism is revealed, where the rate-dominating event is found to be C{sub 1}-attachment for concave growth-front segments and C{sub 5}-attachment for others. This growth mechanism leads to an interesting time-resolved growth behavior which is well consistent with that observed in a recent scanning tunneling microscopy experiment.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Kelvin Probe Force Microscopy for High-Resolution Imaging of Hydrogen in Steel and Aluminum Alloys

SRNL is working with Sandia NL, Pacific Northwest NL and Oak Ridge NL in the H-Mat consortium with the objective of developing materials with a higher resistance to hydrogen attack. Understanding the mechanism of hydrogen interactions in metal alloys is continually a topic of interest for applications which involve the long-term storage of hydrogen. Atomic hydrogen segregates to regions of extended defects, such as grain and phase boundaries, and can cause stress and premature cracking through a process known as hydrogen embrittlement. Advanced microstructural imaging techniques, with minimal sample preparation needs, that are capable of resolving hydrogen segregation at the nanometer scale is needed. Current imaging technologies to aid in understanding the effects of hydrogen in metals involve primarily fractography after mechanical testing. Hydrogen segregated at the surface and particularly at surface defect sites changes the local work function of the material. This can be measured by Kelvin Probe Force Microscopy, KPFM, a variant of atomic force microscopy (AFM). KPFM produces surface potential images and is capable of measuring the local change in work function of surfaces with very high spatial resolution. The spatial resolution of KPFM is optimally ~5 nm, yielding very high hydrogen concentration/microstructure coloration capabilities. By locating the presence of hydrogen and its relationship with extended defects, it may be possible to develop microstructures less susceptible to hydrogen embrittlement. The objective of this effort is to assess the utility of KPFM to determine the H 2 concentration profiles surrounding complex microstructural features in high strength steel and aluminum alloys subjected to high pressure hydrogen exposure.

08 HYDROGEN↗

Fullerene-like defects in high-temperature neutron-irradiated nuclear graphite

Irradiation-induced defect evolution in graphite is particularly important for its application in graphite-moderated nuclear reactors. The evolution of defects directly influences macroscopically observed property changes in irradiated nuclear graphite which, in turn, can govern the lifetime of graphite components. This article reports novel defect structures and the irradiation response of microstructural features occurring in high-temperature irradiated nuclear graphite IG-110. High resolution transmission electron microscopy (HRTEM) was used to characterize specimens neutron-irradiated at a high temperature (≥ 800°C) at doses of 1.73 and 3.56 atomic displacements per atom (dpa). Concentric shelled and fullerene-like defects were found to result in swelling along the c-axis and contraction along the a/b-axis of crystallites. Furthermore, such defects are shown to occur within, and partially fill, Mrozowski cracks prior to turnaround dose. In addition, in situ TEM under similar irradiation conditions was used to capture the real-time dynamic evolution of defects, providing unambiguous analysis of the evolution of the graphite structures during irradiation. Here, the results suggest the mainstream theory for radiation damage in nuclear graphite (which assumes additional basal plane formation as the sole reason) to be an incorrect interpretation of defect evolution contributing to irradiation-induced property changes at higher temperatures.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

Super-Resolution Microscopy Reveals Shape and Distribution of Dislocations in Single Crystal Nanocomposites

With their potential to offer new properties, single crystals containing nanoparticles provide an attractive class of nanocomposite materials. Yet, to fully profit from these, it is essential that we can characterise their 3D structures, identifying the locations of individual nanoparticles, and the defects present within the host crystals. With calcite crystals containing quantum dots as a model system, we here use 3D stochastic optical reconstruction microscopy (STORM) to locate the positions of the nanoparticles within the host crystal. The nanoparticles are shown to preferentially associate with dislocations in a manner previously recognised for atomic impurities, rendering these defects visible by STORM. Our images also demonstrate that the types of dislocations formed at the crystal/ substrate interface vary according to the nucleation face, and dislocation loops are observed that have entirely different geometries to classic misfit dislocations. This approach offers a rapid, easily accessed, and non-destructive method for visualising the dislocations present within crystals, and gives insight into the mechanisms by which additives become occluded within crystals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Kelvin Probe Force Microscopy for High-Resolution Imaging of Hydrogen in Steel and Aluminum Alloys (Q3 Progress Report)

SRNL is working with Sandia NL, Pacific Northwest NL and Oak Ridge NL in the H-Mat consortium with the objective of developing materials with a higher resistance to hydrogen attack. Understanding the mechanism of hydrogen interactions in metal alloys is continually a topic of interest for applications which involve the long-term storage of hydrogen. Atomic hydrogen segregates to regions of extended defects, such as grain and phase boundaries, and can cause stress and premature cracking through a process known as hydrogen embrittlement. Advanced microstructural imaging techniques, with minimal sample preparation needs, that are capable of resolving hydrogen segregation at the nanometer scale is needed. Current imaging technologies to aid in understanding the effects of hydrogen in metals involve primarily fractography after mechanical testing. Hydrogen segregated at the surface and particularly at surface defect sites changes the local work function of the material. This can be measured by Kelvin Probe Force Microscopy, KPFM, a variant of atomic force microscopy (AFM). KPFM produces surface potential images and is capable of measuring the local change in work function of surfaces with very high spatial resolution. The spatial resolution of KPFM is optimally ~5 nm, yielding very high hydrogen concentration/microstructure coloration capabilities. By locating the presence of hydrogen and its relationship with extended defects, it may be possible to develop microstructures less susceptible to hydrogen embrittlement. The objective of this effort is to assess the utility of KPFM to determine the H 2 concentration profiles surrounding complex microstructural features in high strength steel and aluminum alloys subjected to high pressure hydrogen exposure.

08 HYDROGEN↗

Phase transformations, microstructural refinement and defect evolution mechanisms in Al-Si alloys under non-hydrostatic diamond anvil cell compression

Non-hydrostatic compression of materials using a diamond anvil cell (DAC) can transform equilibrium microstructure of an alloy to novel, potentially metastable states. In this study, in situ synchrotron X-ray diffraction (XRD) during compression up to 24 GPa and subsequent ex situ, high resolution analytical electron microscopy (AEM) after decompression of an Al-Si alloy provided insight into the crystallographic changes during the compression as well as microstructural refinement, and defect structures caused by such a high pressure compression-decompression process. Pressure resolved in-situ synchrotron XRD was used to detail the phase transformation pathway of the eutectic Si phase in Al-Si alloy, from Si-I → Si-XI → Si-V during compression, and a final transformation predominantly to Si-III after decompression. Using scanning and transmission electron microscopy (S/TEM), site specific analysis of the alloy immediately underneath the anvil contact surface demonstrated a highly complex microstructure. A narrow region of thick amorphous Al oxide interspersed with nanocrystalline grains was found at the top surface. Underneath this Al oxide, while the majority the eutectic Si was transformed into highly-deformed, polycrystalline (PC) Si-III, a complex intermediate layer was discovered at the interface between Al and Si, comprised of a small fraction of Al nanocrystals and a majority of nanocrystalline Si-I. This combination of pressure resolved in-situ synchrotron XRD coupled with subsequent high resolution, electron microscopy resolved the phase transformation as well as non-equilibrium microstructures in a metallic alloy induced by a non-hydrostatic high pressure compression followed by decompression.

36 MATERIALS SCIENCE↗

Defective Interfaces in Yttrium-Doped Barium Zirconate Films and Consequences on Proton Conduction

Yttrium-doped barium zirconate (BZY) thin films have recently showed surprising electric transport properties. Experimental investigations conducted mainly by electrochemical impedance spectroscopy suggested that a consistent part of this BZY conductivity is of protonic nature. These results have stimulated further investigations by local unconventional techniques. Here, we use electrochemical strain microscopy (ESM) to detect electrochemical activity in BZY films with nanoscale resolution. ESM in a novel cross-sectional measuring setup allows the direct visualization of the interfacial activity. The local electrochemical investigation is compared with the structural studies performed by state of art scanning transmission electron microscopy (STEM). The ESM and STEM results show a clear correlation between the conductivity and the interface structural defects. In conclusion, we propose a physical model based on a misfit dislocation network that introduces a novel 2D transport phenomenon, whose fingerprint is the low activation energy measured.

36 MATERIALS SCIENCE↗

Defect-Mediated Anisotropic Lattice Expansion in Ceramics as Evidence for Nonthermal Coupling between Electromagnetic Fields and Matter

Electromagnetic (EM) fields can trigger a range of surprising responses in materials. Microwave radiation (MWR), a type of EM field in the frequency range of 0.3–300GHz, can lower the synthesis temperature required for ceramics such as TiO2 and induces mixed amorphous–crystalline phase compositions. To better understand the effects of MWR on matter, structural changes during microwave heating and MWR-assisted synthesis using in situ synchrotron X-ray diffraction are studied. Anisotropic expansion–contraction of lattice parameters under microwave-radiation is observed, which contradicts the results from conventional thermal heating. When as-received TiO2 powders are heated with MWR, an instantaneous decrease in the intensities of diffraction peaks indicates decrystallization/amorphization. High resolution electron microscopy supports these observations. Raman spectroscopy and X-ray photoemission spectroscopy indicate increased defect-generation under microwave exposure. Molecular dynamics simulations on the anatase phase of TiO2 suggests that introducing an oxygen vacancy can lead to the formation of an interstitial–vacancy pair resulting in anisotropic expansion–contraction of the lattice. These unique responses of ceramics under externally applied fields provide direct evidence for nonthermal coupling between EM fields and matter. Understanding such nonthermal, field-driven processes has implications in engineering low-temperature processes for integrating ceramics with polymers for flexible electronics, energy harnessing, and storage applications.

anisotropic lattice expansion↗

Characterization of swift heavy ion irradiation damage in ceria

We have examined microstructural evolution in irradiated ceria (CeO2) using swift heavy ion irradiation, electron microscopy, and atomistic simulation. CeO2, a UO2 fuel surrogate, was irradiated with gold ions at an energy of 1 GeV to fluences up to 1x1014 ions/cm2. Transmission electron microscopy accompanied by electron energy loss spectroscopy showed that the ion tracks were of similar size at all fluences, and that there was no chemical change in the ion track core. Classical molecular dynamics simulations of thermal spikes in CeO2 with energy deposition of 12 and 36 keV/nm show damage consisting of isolated point defects at the lower energy and defect clusters at 36 keV/nm, with no amorphization at either energy. Inferences are drawn from modeling about density changes in the ion track and the formation of interstitial loops that shed light on features observed by electron microscopy of swift heavy ion irradiated ceria.

Yablinsky, Clarissa↗

Effect of the interaction conditions of the probe of an atomic-force microscope with the n-GaAs surface on the triboelectrization phenomenon

Triboelectrization as a result of the scanning of an atomic-force-microscope probe over an n-GaAs surface in the contact mode is investigated. The dependences of the local potential variation on the scanning rate and the pressing force of the probe are obtained. The results are explained by point-defect formation in the surface layers of samples under the effect of deformation of these layers during probe scanning. The charge localized at these defects in the case of equilibrium changes the potential of surface, which is subject to triboelectrization. It is shown that, for qualitative explanation of the observed dependences, it is necessary to take into account both the generation and annihilation of defects in the region experiencing deformation.

36 MATERIALS SCIENCE↗

A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon

Non-volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an important material class owing to their atomic thinness enabling the ultimate dimensional scaling. Here, various monolayer or few-layer 2D materials are presented in the conventional vertical structure that exhibit NVRS, including TMDs (MX 2 , M = transitional metal, e.g., Mo, W, Re, Sn, or Pt; X = chalcogen, e.g., S, Se, or Te), TMD heterostructure (WS2/MoS2), and an atomically thin insulator (h-BN). These results indicate the universality of the phenomenon in 2D non-conductive materials, and feature low switching voltage, large ON/OFF ratio, and forming-free characteristic. A dissociation–diffusion–adsorption model is proposed, attributing the enhanced conductance to metal atoms/ions adsorption into intrinsic vacancies, a conductive-point mechanism supported by first-principle calculations and scanning tunneling microscopy characterizations. Our results motivate further research in the understanding and applications of defects in 2D materials.

36 MATERIALS SCIENCE↗

Large Photothermal Effect in Sub-40 nm h-BN Nanostructures Patterned Via High-Resolution Ion Beam

The controlled nanoscale patterning of 2D materials is a promising approach for engineering the optoelectronic, thermal, and mechanical properties of these materials to achieve novel functionalities and devices. Herein, high-resolution patterning of hexagonal boron nitride (h-BN) is demonstrated via both helium and neon ion beams and an optimal dosage range for both ions that serve as a baseline for insulating 2D materials is identified. Through this nanofabrication approach, a grating with a 35 nm pitch, individual structure sizes down to 20 nm, and additional nanostructures created by patterning crystal step edges are demonstrated. Raman spectroscopy is used to study the defects induced by the ion beam patterning and is correlated to scanning probe microscopy. Photothermal and scanning near-field optical microscopy measure the resulting near-field absorption and scattering of the nanostructures. These measurements reveal a large photothermal expansion of nanostructured h-BN that is dependent on the height to width aspect ratio of the nanostructures. This effect is attributed to the large anisotropy of the thermal expansion coefficients of h-BN and the nanostructuring implemented. Finally, the photothermal expansion should be present in other van der Waals materials with large anisotropy and can lead to applications such as nanomechanical switches driven by light.

2D materials↗

Identification of Recombination Losses in CdSe/CdTe Solar Cells from Spectroscopic and Microscopic Time-Resolved Photoluminescence

Due to the lowest-cost and best reliability, CdTe solar cells are the leading thin-film photovoltaic technology. Increasing open-circuit voltage by reducing recombination represents the most promising path toward further improvements. Analysis is needed to identify limitations that cause efficiency losses. To achieve this goal for Cu-doped CdSe/CdTe solar cells, time-resolved spectroscopy and microscopy are developed and applied. Recombination lifetimes and radiative efficiency identify that defect-mediated recombination is the dominant voltage loss mechanism. When carrier lifetimes are averaged over many crystalline grains, they increase from 180 to 430 ns when Al2O3 is applied to the back contact. The quasi-Fermi-level splitting correspondingly increases from 880–905 to 906–931 mV, indicating a pathway to overcome the long-standing 900 mV voltage limitation. However, the dominant recombination losses are attributed to the absorber bulk. From microscopic carrier lifetime measurements, it is identified that space charge fields due to charged grain boundaries (GBs) lead to recombination in the CdTe absorber bulk. At high injection, GB space charge fields are screened, but that occurs above 1 Sun excitation conditions. Alloying with selenium in the near-interface CdSeTe absorber region reduces GB losses and is identified as one of the factors leading to high radiative and power conversion efficiency.

14 SOLAR ENERGY↗

The effect of helium on cavity swelling in dual-ion irradiated Fe and Fe-10Cr ferritic alloys

We report Ferritic-martensitic (FM) steels for in-vessel components in proposed fusion reactors are expected to suffer from high levels of displacement damage and helium (He) generation by neutron transmutation. However, a thorough understanding of the He synergistic effects on the cavity swelling in FM steels is still not well established. To gain fundamental insights into the He effect on cavity swelling, high purity Fe and Fe-10 wt.% Cr ferritic model alloys were irradiated with 8 MeV Ni ions and co-implanted He ions at 400 to 550 °C up to 30 displacements per atom (dpa) with He implantation rates of 0.1, 10 and 50 appm He/dpa. The current study focuses on the 50 appm He/dpa, 500 °C behavior vs. 0.1 and 10 appm He/dpa. Irradiation-induced defects, including cavities, dislocation loops, and dislocation networks were characterized using transmission electron microscopy (TEM). In the grain interior, a bimodal cavity size distribution was observed in the 10 and 50 appm He/dpa samples, but not for 0.1 appm He/dpa. Cavity swelling was maximized at intermediate He implantation rates of ~10 appm He/dpa for both ion-irradiated Fe and Fe-10Cr alloys. The cavity swelling behavior as a function of He implantation rate appears to be controlled by the He/dpa-dependent variation of cavity sink strengths. Treating small bubbles as biased sinks for interstitial absorption can significantly increase the ratio of biased to unbiased sink strengths (Q) and results in maximized cavity swelling for a Q ratio close to one.

36 MATERIALS SCIENCE↗

Microstructural and compositional evolutions in $γ$-LiAlO 2 pellets during ion irradiation at an elevated temperature

This study reports on the microstructural, phasic and compositional evolutions of γ-LiAlO 2 during ion irradiation. Polycrystalline γ-LiAlO 2 pellets were irradiated sequentially with He + and D 2 + ions to the same combined fluences of up to 3 × 10 17 (He + +D + )/cm 2 at 773 K. The irradiated pellets were characterized using scanning transmission electron microscopy and atom probe tomography. Surface amorphization likely due to radiolysis and planar defects as a possible precursor for formation of precipitates are created at 5 × 10 16 (He + +D + )/cm 2 , followed by the formation of nano-sized precipitates and fractures at higher doses. Spinel-like precipitates of non-stoichiometric LiAl 5 O 8 and gas-filled cavities are observed to grow with increasing dose. Faceted precipitates and rounded cavities appear at 2 × 10 17 (He + +D + )/cm 2 . With further increasing ion fluence to 3 × 10 17 (He + +D + )/cm 2 , amorphization of the precipitates takes place and micron-sized fractures appear. Surface exfoliation could occur at an extremely high ion fluence. There are compositional changes in the γ-LiAlO 2 pellets during the microstructural evolution. In the precipitate and amorphized regions, Li concentrations decrease to ~7 and 3.7 at.% from 25 at.% in γ-LiAlO 2 , respectively. This study reveals a full-cycle microstructural evolution with corresponding compositional changes in γ-LiAlO 2 pellets during ion irradiation at 773 K. In conclusion, the data could help model, assess, and predict the material performance during neutron irradiation in reactors.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗