Search NASA⌕ Search

SEARCH · Search NASA

Results for “doping”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Characterisation of frequency doubling in Eu(2+) doped aluminosilicate fibres

The results of a series of experiments on efficient second-harmonic generation in a fiber with a Eu(2+)-doped aluminosilicate core are reported. The fiber was prepared by the seeding method with CW mode-locked radiation at 1.06 micron and produced ultrastable peak conversion efficiencies of 0.001 during mode-locked readout. Experiments were performed to determine the IR preparation intensity dependence, the stability of the output, and the type of erasure mechanisms which occur. The results are compared with those of germanosilicate fibers and some similarities and differences are discussed.

Driscoll, T. J.↗
NASA NTRS1992

Delta-Doped Buried Channels In Charge-Coupled Device

Buried-channel charge-couple devices (CCD's) of proposed new type contain multiple thin, highly-doped channel layers instead of single relatively thick channel layers. Benefits: better performance at low temperature and less sensitivity to damage by radiation.

Fossum, Eric R.↗
NASA NTRS1991

High-T sub c fluorine-doped YBa2Cu3O(y) films on ceramic substrates by screen printing

Thick films of fluorine-doped YBa2Cu3O(y) were screen printed on highly polished alumina, magnesia spinel, strontium titanate, and yttria-stabilized zirconia (YSZ) substrates. They were annealed at 1000 C and soaked in oxygen at 450 C, followed by slow cooling to room temperature. The films were characterized by electrical resistivity measurements as a function of temperature and x-ray diffraction. The film on YSZ showed the best characteristics with a T sub c (onset) of 91 K, T sub c (R equals 0) of 88.2 K, and a transition width, delta T sub c (10-90 percent), of approximately 1.7 K. The film adhesion, probably controlled by interdiffusion of cations between the film and the substrate, was good in all cases except on strontium titanate where the film completely detached from the substrate.

Bansal, Narottam P.↗
NASA NTRS1991

Effect of doping in the Bi-Sr-Ca-Cu-O superconductor

The results of the effect of doping on the superconducting transition in the Bi-Sr-Ca-Cu-O system are reported. Samples were prepared under identical conditions with varying types (Pb, Sb, Sn, Nb) and amounts of dopants. All samples consisted of multiple phases, and showed stable and reproducible superconducting transitions. Stabilization of the well known 110 K phase depends on both the type and amount of dopant. No trace of superconducting phase of 150 K and above was observed.

Akbar, S. A.↗
NASA NTRS1991

Stabilization of high Tc phase in bismuth cuprate superconductor by lead doping

It has been widely ascertained that doping of lead in Bi-Sr-Ca-Cu-O systems promotes the growth of high T sub c (110 K) phase, improves critical current density, and lowers processing temperature. A systematic study was undertaken to determine optimum lead content and processing conditions to achieve these properties. A large number of samples with cationic compositions of Bi(2-x)Pb(x)Sr2Ca2Cu3 (x = 0.2 to 2.0) were prepared by conventional solid state reaction technique. Samples of all compositions were annealed together at a temperature and characterized through resistance temperature (R-T) measurements and x ray diffraction to determine the zero resistance temperature, T sub c(0) and to identify presence of phases, respectively. The annealing temperature was varied between 790 and 880 C to optimize processing parameters. Results are given. In brief, an optimum process is reported along with composition of leaded bismuth cuprate superconductor which yields nearly a high T sub c single phase with highly stable superconducting properties.

Gupta, Ram. P.↗
NASA NTRS1992

Erbium-doped fiber amplifier elements for structural analysis sensors

The use of erbium-doped fiber amplifiers (EDFA's) in optical fiber sensor systems for structural analysis is described. EDFA's were developed for primary applications as periodic regenerator amplifiers in long-distance fiber-based communication systems. Their in-line amplification performance also makes them attractive for optical fiber sensor systems which require long effective lengths or the synthesis of special length-dependent signal processing functions. Sensor geometries incorporating EDFA's in recirculating and multiple loop sensors are discussed. Noise and polarization birefringence are also considered, and the experimental development of system components is discussed.

Hanna-Hawver, P.↗
NASA NTRS1992

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical point of their dielectric function toward the InP lattice-matched concentration.

Alterovitz, Samuel A.↗
NASA NTRS1991

High-power single-element pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for pumping Er-doped fiber amplifiers

A 980-nm-ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs single-quantum-well laser with a maximum single-ended output power of 240 mW from a facet-coated device is fabricated from a graded-index separate-confinement heterostructure grown by molecular-beam epitaxy. The laser oscillates in the fundamental spatial mode, allowing 22 percent coupling efficiency into a 1.55-micron single-mode optical fiber. Life testing at an output power of 30 mW per facet from uncoated devices reveals a superior reliability to GaAs/AlGaAs quantum-well lasers but also the need for protective facet coatings for long term reliability at power levels required for pumping Er-doped fiber amplifiers.

Larsson, A.↗
NASA NTRS1991

Optical absorption by free holes in heavily doped GaAs

Optical absorption in p-type GaAs with hole concentrations between 10 exp 19 and 10 exp 20/cu cm has been measured for wavelengths between 2 and 20 microns and compared with results of theoretical calculations. In contrast to previous measurements at lower doping levels, the occupied hole states are far from the zone center, where the heavy- and light-hole bands become parallel. This gives rise to a large joint density of states for optical transitions. It is found that the overall magnitude of the observed absorption is explained correctly by the theory, with both the free-carrier (indirect) and the inter-valence-band (direct) transitions contributing significantly to the total absorption. The strength of the absorption (a about 20,000/cm for N(A) = 5 x 10 exp 19/cu cm) is attractive for long-wavelength infrared-detector applications.

Huberman, M. L.↗
NASA NTRS1992

Generation of sub-100-fs pulses from a CW mode-locked chromium-doped forsterite laser

Generation of femtosecond pulses from a continuous-wave mode-locked chromium-doped forsterite laser is reported. The forsterite laser was actively mode locked by using an acoustooptic modulator operating at 78 MHz with two Brewster high-dispersion glass prisms for intracavity chirp compensation. Transform-limited sub-100-fs pulses were routinely generated in the TEM(00) mode with 85 mW of continuous power (with 1 percent output coupler), tunable over 1230-1280 nm. The shortest pulses measured had a 60-fs pulse width.

Seas, A.↗
NASA NTRS1992

High-field transport properties of InAs(x)P(1-x)/InP (x = 0.3-1.0) modulation doped heterostructures at 300 and 77 K

Detailed measurements at 300 and 77 K have been made of the high-field transport properties of pseudomorphic InAsP/InP modulation-doped heterostructures grown by low-pressure organometallic CVD. The high-field channel velocities are comparable to or better than that of InGaAs/InAlAs heterostructures, and the transport properties of InAs/InP heterostucture suggest that carriers remain confined in the channel even at high fields.

Yang, D.↗
NASA NTRS1993

Hot Deformation Of Si(3)N(4) Doped With Sc(2)O(3)

Report describes preparation, microstructural properties, and high-temperature deformation behavior of Si(3)N(4) doped with Sc(2)O(3). Powders of Si(3)N(4) with small additions of Sc(2)O(3) sintered under nitrogen overpressures to full density; expensive hot pressing or hot isostatic pressing not necessary to attain full density. Test of bars indicate high strengths at high temperatures and excellent time-dependent strength properties. Useful for fabrication of hot-section components of automotive gas-turbine engines.

Cheong, Deock-Soo↗
NASA NTRS1992

INAS hole-immobilized doping superlattice long-wave-infrared detector

An approach to long-wave-infrared (LWIR) technology is discussed. The approach is based on molecular beam epitaxy (MBE) growth of hole immobilized doping superlattices in narrow band gap 3-5 semiconductors, specifically, InAs and InSb. Such superlattices are incorporated into detector structures suitable for focal plane arrays. An LWIR detector that has high detectivity performance to wavelengths of about 16 microns at operating temperatures of 65K, where long-duration space refrigeration is plausible, is presented.

Maserjian, Joseph↗
NASA NTRS1992

Elevated temperature compressive properties of reaction milled NiAl-AlN and Zr-doped NiAl-AlN composites

Previous studies of a single lot of NiAl powder which had been ground under high intensity conditions in liquid nitrogen (cryomilling) indicated that this processing leads to a high strength, elevated temperature NiAl-AlN composite. Because this was the first known example of the use of the reaction milling process to produce a high temperature composite, the reproducibility of this technique was unknown. Two additional lots of NIAl powder and a lot of a Zr-doped NiAl powder have been cryomilled, and analyses indicate that AlN was formed within a NiAl matrix in all three cases. Compression testing between 1200 K and 1400 K has shown that the deformation resistance of these heats is similar to that of the first lot of NiAl-AlN; thus cryomilling can improve the creep resistance of NiAl by a factor of six. Based on this work, it is concluded that cryomilling of NiAl powder to form high temperature, high strength NiAl-AlN composites is a reproducible process.

Whittenberger, J. D.↗
NASA NTRS1993

Strong far-infrared intersubband absorption under normal incidence in heavily n-type doped nonalloy GaSb-AlSb superlattices

We report on long-wavelength intersubband absorption under normal incidence in heavily doped binary-binary GaSb-AlSb superlattices. Due to a small energy difference between the ellipsoidal L valleys in GaSb and the low-density-of-states Gamma minimum, electrons spill over from the first Gamma subband into the higher-energy L subband in GaSb wells, where they are allowed to make an intersubband transition under normally incident radiation. A peak fractional absorption per quantum well of 6.8 x 10 exp 3 (absorption coefficient alpha of about 8500/cm) is observed at about 15 microns wavelength for a sheet concentration of 1.6 x 10 exp 12 sq cm/well.

Samoska, L. A.↗
NASA NTRS1993

Self-mode-locked chromium-doped forsterite laser generates 50-fs pulses

Stable transform-limited (delta nu-delta tau = 0.32) femtosecond pulses with a FWHM of 50 fs were generated from a self-mode-locked chromium-doped forsterite laser. The forsterite laser was synchronously pumped by a CW mode-locked Nd:YAG (82 MHz) laser that generated picosecond pulses (200-300 ps) and provided the starting mechanism for self-mode-locked operation. Maximum output power was 45 mW for 3.9 W of absorbed pumped power with the use of an output coupler with 1 percent transmission. The self-mode-locked forsterite laser was tuned from 1240 to 1270 nm.

Seas, A.↗
NASA NTRS1993

Activation energy and capture cross section of majority carrier traps in Zn doped InP

Schottky barrier diodes were fabricated on Zn doped InP Wafers. The diodes were radiation damaged with 2 MeV protons to a dose of 2 x 10(exp 12)cm(sup -2). The damage was analyzed by DLTS (deep level transient spectroscopy) using the double correlation technique. Capture cross sections were measured directly. Two major defects were observed in the DLTS spectra. The first defect, was H4 at Ev + 0.29 eV, with capture cross section 1.1 x 10(exp -17)cm(sup 2). The second defect, was H5 at Ev + 0.53 eV. Its capture cross section varied with temperature as described by the relationship sigma = sigma(sub 0) exp(delta(E)/kT) where sigma(sub 0) = 1.3 x 10(exp -19)cm(sup 2) and delta(E) = .08 eV. This relationship yields a sigma of 5.9 x 10(exp -21)cm(sup 2) at room temperature. The surprisingly small capture cross section of H5 and its temperature dependence are discussed in terms of the multiphonon emission process for carrier capture at the defect. The advantages of the improved experimental techniques used are also discussed.

Rybicki, George↗
NASA NTRS1993

Reflectance spectra of sulfate-and carbonate-bearing Fe(3+)-doped montmorillonites as Mars soil analogs

Ferric smectites and ferrihydrite may be common alteration products of igneous lithologies on Mars, and experiments involving montmorillonite enriched with Fe(3+) support the likelihood of ferric smectites on Mars. Mossbauer spectroscopy has been used to identify ferrihydrite (Fe4(O,OH,H2O)12) as the primary ferric material in Fe(3+)-doped montmorillonite. Ferrihydrite is especially interesting due to its role as a precursor in the formation of hematite and goethite. Reflectance spectroscopy in the visible and infrared regions are coupled with Mossbauer spectroscopy in this study to characterize the ferric material in montmorillonites containing Fe(3+), as well as carbonates or sulfates, in the interlayer region.

Bishop, Janice L.↗