Generation of nanoclusters by ultrafast laser ablation of Al: Molecular dynamics study
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Miloshevsky, Alexander↗
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Energy transfer networks: Quasicontinuum photoluminescence linked to high densities of defects
In a series of studies related to laser-induced damage of optical materials and deposition of plastics, we discovered a broadly emitting photoluminescence with fast lifetimes that we termed quasicontinuum photoluminescence (QC-PL). Here in this paper, we suggest that a high density of optically active defects leads to QC-PL, where interactions between defects affect the temporal and spectral characteristics of both excitation and emission. We develop a model that predicts the temporal characteristics of QC-PL, based on energy transfer interactions between high densities of defects. Our model does not explain all spectral broadening and redshifts found in QC-PL, since we do not model spectral changes in defects due to proximity to other defects. However, we do provide an example of a well-defined system that exhibits the QC-PL characteristics of a distribution in shortened lifetimes and broadened, redshifted energy levels: an organic chromophore (fluorescein) that has been dried rapidly on a fused silica surface. Recently, we showed that regions of fused silica exposed to up to 1 billion high-fluence laser shots at 351 rm nm at subdamage fluences exhibit significant transmission losses at the surface. Here, we find that these laser-exposed regions also exhibit QC-PL. Increases in the density of induced defects on these laser-exposed surfaces, as measured by the local transmission loss, lead to decreases in the observed lifetime and redshifts in the spectrum of the QC-PL, consistent with our explanation for QC-PL. In conclusion, we have found QC-PL in an increasing variety of situations and materials, and we believe it is a phenomenon commonly found on surfaces and nanostructured materials.
36 MATERIALS SCIENCE↗
Ionization-induced thermally activated defect-annealing process in SiC
Ionizing events can lead to panoply of irradiation effects, and in silicon carbide (SiC), they drastically modify the defect production rate or the initial density. To better comprehend this phenomenon, 6H-SiC single crystals were first predamaged using low-velocity 100-keV Fe + ions at three fluences in the range of 10 14 cm -2 to induce three different initial disorder levels peaking at values between ~0.8 and 1 (1 corresponding to full amorphization). Crystals were then submitted to swift heavy ion irradiation in the 10 13 cm -2 fluence range at both low (~100 K) and high (~770 K) temperature. Rutherford backscattering spectrometry in channeling conditions revealed that swift ions allow annealing part of the initial damage, the recovery efficiency increasing with the irradiation temperature and reaching 75% in initially severely disordered crystals. This temperature effect has been qualitatively predicted by molecular dynamics simulations. Transmission electron microscopy allowed imaging both the recovery and the difference in the microstructure of the layers irradiated at low or high temperature. Recovery cross sections are discovered to lie in the range of a few square nanometers, consistent with previously reported values. A scenario for a general, two-step annealing mechanism referred to as an ionization-activated, thermally assisted defect-annealing (IATADA) process is proposed. This mechanism rationalizes the diverse descriptions reported so far in the literature.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Photoinduced structural recovery dynamics of rare-earth nickelate thin films
Photoinduced structural dynamics of rare-earth nickelate thin films, NdNiO 3 and SmNiO 3 , grown on (001) oriented SrTiO 3 were studied using time-resolved x-ray diffraction. The evolution of the (002) Bragg peak was tracked following laser excitation. The recovery pathways were found to be strongly dependent on laser fluence for NdNiO 3 and distinct for the two rare-earth nickelates. The recovery of the (002) peak shifts was modeled using a one-dimensional thermal diffusion model which showed that the recovery processes are non-thermal at high fluences. For NdNiO 3 , the timescales for the recovery of the (002) peak shift were found to be closely related to Ni magnetism recovery, potentially indicating magneto-structural coupling. Moreover, the evolution of integrated intensity and full-width-half-maximum points towards the presence of a structural phase separation during recovery. In conclusion, our studies highlight structural recovery pathways in nickelates by comparing the distinct responses of the photoinduced metal-insulator transition in NdNiO 3 and SmNiO 3 .
36 MATERIALS SCIENCE↗
Near, far, wherever you are: simulations on the dose efficiency of holographic and ptychographic coherent imaging
Different studies in X-ray microscopy have arrived at conflicting conclusions about the dose efficiency of imaging modes involving the recording of intensity distributions in the near (Fresnel regime) or far (Fraunhofer regime) field downstream of a specimen. A numerical study is presented on the dose efficiency of near-field holography, near-field ptychography and far-field ptychography, where ptychography involves multiple overlapping finite-sized illumination positions. Unlike what has been reported for coherent diffraction imaging, which involves recording a single far-field diffraction pattern, it is found that all three methods offer similar image quality when using the same fluence on the specimen, with far-field ptychography offering slightly better spatial resolution and a lower mean error. These results support the concept that (if the experiment and image reconstruction are done properly) the sample can be near or far; wherever you are, photon fluence on the specimen sets one limit to spatial resolution.
42 ENGINEERING↗
Accounting for electron-beam-induced warping of molecular nanocrystals in MicroED structure determination
High-energy electrons induce sample damage and motion at the nanoscale to fundamentally limit the determination of molecular structures by electron diffraction. Using a fast event-based electron counting (EBEC) detector, we characterize beam-induced, dynamic, molecular crystal lattice reorientations (BIRs). These changes are sufficiently large to bring reciprocal lattice points entirely in or out of intersection with the sphere of reflection, occur as early events in the decay of diffracted signal due to radiolytic damage, and coincide with beam-induced migrations of crystal bend contours within the same fluence regime and at the same illuminated location on a crystal. These effects are observed in crystals of biotin, a series of amino acid metal chelates, and a six-residue peptide, suggesting that incident electrons inevitably warp molecular lattices. The precise orientation changes experienced by a given microcrystal are unpredictable but are measurable by indexing individual diffraction patterns during beam-induced decay. Reorientations can often tilt a crystal lattice several degrees away from its initial position before irradiation, and for an especially beam-sensitive Zn(II)-methionine chelate, are associated with dramatic crystal quakes prior to 1 e − Å −2 electron beam fluence accumulates. Since BIR coincides with the early stages of beam-induced damage, it echoes the beam-induced motion observed in single-particle cryoEM. As with motion correction for cryoEM imaging experiments, accounting for BIR-induced errors during data processing could improve the accuracy of MicroED data.
Vlahakis, Niko (ORCID:0000000250920265)↗
Fast event-based electron counting for small-molecule structure determination by MicroED
Electron counting helped realize the resolution revolution in single-particle cryoEM and is now accelerating the determination of MicroED structures. Its advantages are best demonstrated by new direct electron detectors capable of fast (kilohertz) event-based electron counting (EBEC). This strategy minimizes the inaccuracies introduced by coincidence loss (CL) and promises rapid determination of accurate structures. We used the Direct Electron Apollo camera to leverage EBEC technology for MicroED data collection. Given its ability to count single electrons, the Apollo collects high-quality MicroED data from organic small-molecule crystals illuminated with incident electron beam flux densities as low as 0.01–0.045 e − /Å 2 /s. Under even the lowest flux density (0.01 e − /Å 2 /s) condition, fast EBEC data produced ab initio structures of a salen ligand (268 Da) and biotin (244 Da). Each structure was determined from a 100° wedge of data collected from a single crystal in as few as 50 s, with a delivered fluence of only ∼0.5 e − /Å 2 . Fast EBEC data collected with a fluence of 2.25 or 3.33 e − /Å 2 also facilitated a 1.5 Å structure of thiostrepton (1665 Da). While refinement of these structures appeared unaffected by CL, a CL adjustment applied to EBEC data further improved the distribution of intensities measured from the salen ligand and biotin crystals. However, CL adjustment only marginally improved the refinement of their corresponding structures, signaling the already high counting accuracy of detectors with counting rates in the kilohertz range. Overall, by delivering low-dose structure-worthy data, fast EBEC collection strategies open new possibilities for high-throughput MicroED.
EBEC↗
Effects of Proton Irradiation on GaN Vacuum Electron Nanodiodes
Gallium nitride (GaN)-based nanoscale vacuum electron devices, which offer advantages of both traditional vacuum tube operation and modern solid-state technology, are attractive for radiation-hard applications due to the inherent radiation hardness of vacuum electron devices and the high radiation tolerance of GaN. Here, we investigate the radiation hardness of top-down fabricated n-GaN nanoscale vacuum electron diodes (NVEDs) irradiated with 2.5-MeV protons (p) at various doses. We observe a slight decrease in forward current and a slight increase in reverse leakage current as a function of cumulative protons fluence due to a dopant compensation effect. The NVEDs overall show excellent radiation hardness with no major change in electrical characteristics up to a cumulative fluence of 5E14 p/cm 2 , which is significantly higher than the existing state-of-the-art radiation-hardened devices to our knowledge. In conclusion, the results show promise for a new class of GaN-based nanoscale vacuum electron devices for use in harsh radiation environments and space applications.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
The Effect of 1–10-MeV Neutrons on the JESD89 Test Standard
Here, the JESD89 test standard defines how terrestrial neutron testing is conducted [1] . The test standard covers a number of different types of radiation used for testing, including protons, neutrons, and alphas, and different types of testing, including life testing and accelerated testing. Broad-spectrum neutron testing is the most common type of accelerated radiation testing for the terrestrial radiation environment. Unlike most test standards, the JESD89 defines the minimum energy for determining the cumulative fluence for the deployed and test environment. Currently, the minimum energy is set at 10 MeV. As the test standard is currently being rewritten, changing the minimum energy to 1 MeV is being explored, because it is believed that the onset to neutron-induced single-event effects (SEEs) is less than 10 MeV. There are three separate problems with lowering the minimum energy: determining whether electronics have a sensitivity to neutron-induced SEEs below 10 MeV, determining whether the test spectra match the terrestrial environment in the 1–10-MeV range, and the measurement error caused by not including the fluence from 1 to 10 MeV. In this paper, we present information on these factors and whether the minimum energy should be lowered to 1 MeV.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
Training a Neural Network on Analog TaO x ReRAM Devices Irradiated With Heavy Ions: Effects on Classification Accuracy Demonstrated With CrossSim
The image classification accuracy of a TaO x ReRAM-based neuromorphic computing accelerator is evaluated after intentionally inducing a displacement damage up to a fluence of 10 14 2.5-MeV Si ions/cm 2 on the analog devices that are used to store weights. Results are consistent with a radiation-induced oxygen vacancy production mechanism. When the device is in the high-resistance state during heavy ion radiation, the device resistance, linearity, and accuracy after training are only affected by high fluence levels. Here, the findings in this paper are in accordance with the results of previous studies on TaO x -based digital resistive random access memory. When the device is in the low-resistance state during irradiation, no resistance change was detected, but devices with a 4-kΩ inline resistor did show a reduction in accuracy after training at 10 14 2.5-MeV Si ions/cm 2 . This indicates that changes in resistance can only be somewhat correlated with changes to devices’ analog properties. This paper demonstrates that TaO x devices are radiation tolerant not only for high radiation environment digital memory applications but also when operated in an analog mode suitable for neuromorphic computation and training on new data sets.
42 ENGINEERING↗
Heavy-ion-induced displacement damage effects in magnetic tunnel junctions with perpendicular anisotropy
Here, we evaluate the resilience of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy to displacement damage induced by heavy ion irradiation. MTJs were exposed to 3 MeV Ta 2+ ions at different levels of ion beam fluence spanning five orders of magnitude. The devices remained insensitive to beam fluences up to 10 11 ions/cm 2 , beyond which a gradual degradation in the device magnetoresistance, coercive magnetic field, and spin-transfer-torque switching voltage were observed, ending with a complete loss of magnetoresistance at very high levels of displacement damage (>0.035 displacements per atom). The loss of magnetoresistance is attributed to structural damage at the MgO interfaces, which allows electrons to scatter among the propagating modes within the tunnel barrier and reduces the net spin polarization. Ion-induced damage to the interface also reduces the perpendicular magnetic anisotropy. This study clarifies the displacement damage thresholds that lead to significant irreversible changes in the characteristics of spin-transfer-torque magnetic random access memory (STT-MRAM) and elucidates the physical mechanisms underlying the deterioration in device properties.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
Investigating the Effects of Individual Neutron-Induced Defects in Bipolar Junction Transistors
Here, this study investigates neutron-induced displacement damage in Bipolar Junction Transistors (BJTs) using TCAD models informed by Deep-Level-Transient-Spectroscopy (DLTS) data. These models are calibrated and validated against experimental measurements performed at various neutron fluences. Both npn and pnp transistor configurations are studied to analyze the effects of individual traps on carrier recombination and base leakage currents. In npn transistors, deep traps (0.42 eV from the conduction band) dominate at low voltages, while shallow traps (0.17 eV from the conduction band) become prominent at higher voltages. Conversely, pnp transistors have base leakage current predominantly due to deep-level traps. The study observes a notable trend in trap density versus fluence, characterized by a linear relationship on a log-log scale. These insights into defect evolution under radiation conditions are crucial for optimizing semiconductor device reliability and performance in radiation-prone environments.
42 ENGINEERING↗
MPEX High Heat Flux Plasma Dump Design, Manufacture, and Articles Test
Here, the Material Plasma Exposure eXperiment (MPEX) device is a steady-state linear plasma device currently in the final design phase at the Oak Ridge National Laboratory. This device will reach ion fluences up to 10 31 m -2 and will be used to expose neutron-irradiated materials to divertor-relevant plasmas and to study the effects of plasma-material interactions. These studies will elucidate the complex effects of plasmas with divertor candidate materials capable of withstanding high heat flux and high fluences for next-generation fusion devices. Bidirectional plasma will be generated using a high-power (200 kW) helicon source. Plasma will be confined by superconducting magnets. The last plasma-facing component on the upstream side of the MPEX device is the dump, which has been designed to intercept plasma and energetic particles. The dump will have a total heat load of 9.2 kW. A copper alloy (Glidcop AL-15) was selected for use in the water-cooled flange design because of its high thermal conductivity, its retaining strength at elevated temperatures, and its ability to be used in the high-temperature braze joints used in this application. Titanium-zirconium-molybdenum (TZM) tiles are brazed to the Glidcop AL-15 flange using high-temperature braze alloy. External water-cooling channels are used on the dump flange to prevent water leakage inside the vacuum space. This article discusses the details of the high heat flux dump design, including the computational fluid dynamics (CFD) and structural analyses performed to validate the design to meet the operational requirements of the MPEX device.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Near-surface damage and mixing in Si-Cl 2 -Ar atomic layer etching processes: Insights from molecular dynamics simulations
Silicon-chlorine-argon (Si-Cl 2 -Ar) atomic layer etching (ALE) is simulated using classical molecular dynamics (MD). The simulations provide a detailed view into the near-surface region during ALE processing. Bombardment of Ar + ions creates a mixed amorphous region that significantly differs from the picture of ideal ALE. There is also a significant change in the Si etch yield and the etch product distribution as a function of Ar + ion fluence. The Si etch yield is the highest at the beginning of the bombardment step but eventually decays to the physical sputtering yield. Atomic Cl and silicon chlorides are major etch products at the start of an ion bombardment step, but quickly decay. Atomic Si yields remain relatively constant as a function of Ar + ion fluence. As a result, a new schematic of Si-Cl 2 -Ar ALE is presented in order to emphasize the complex behavior observed in MD simulations.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Repair strategy for fused silica wedged focus lens with high-density filamentary damage
The National Ignition Facility (NIF) is intentionally operated with the final fused silica glass (SiO2) optics exposed to fluences and intensities with the potential to induce damage that will grow with additional laser exposure. Therefore, the NIF operates a recycle loop to refurbish final optics by mitigating any initiated surface damage to arrest its growth. However, the morphology of filamentary damage, caused by local self-focusing in the bulk of a silica optic, adds complexity to optics mitigation and provides a limitation to optic reusability. Here, we evaluate techniques for mitigating isolated and clustered filamentary damage. Optical microscopy before and after installation on NIF was used to determine the efficacy of filamentary mitigation after a series of high fluence and intensity laser exposures. The challenges and success rate of the methods are compared for various filamentary damage mitigation strategies.
National Ignition Facility↗
On-target uniformity of the OMEGA 60-beam inertial confinement fusion laser
Successful direct-drive inertial confinement fusion (ICF) experiments require excellent on-target laser 9 irradiance uniformity maintained over the duration of the pulse. Achieving this symmetry relies on maintaining an 10 energy, power, and fluence balance among all beams in a multibeam laser system. As a result of the improvements 11 described in this paper, the OMEGA 60-beam laser performance has been assessed at approximately 2% on-target 12 irradiance nonuniformity using an updated performance assessment metric that accounts for the laser diagnostic noise 13 floor. The performance is measurement-limited, prompting the need for an improved diagnostic suite. This manuscript 14 provides a comprehensive first-order assessment of extant status of on-target energy, power, and fluence uniformity 15 and explores avenues for improvements.
Diagnostics↗
Fabrication of a glancing-angle-deposited distributed polarization rotator for ultraviolet applications
Glancing-angle–deposited thin films are used to fabricate half-wave plates in a 1-D striped geometry, forming alternating regions of linearly polarized light on a single 100-mm-diam substrate. MgO is selected for fabricating the birefringent films for use in vacuum, based on its formation of isolated columns that avoid potential tensile-stress failure of the porous film. While large-area tests have shown high defect densities for fluences <10 J/cm 2 , small-spot laser-damage testing has shown resistance to fluences up to 30 J/cm 2 (351-nm, 5-ns pulse). Here, an amorphous silica film is investigated to match the optical thickness in the intermediate regions in an effort to fabricate a polarization-control device to reduce focal-point modulation (“beam smoothing”) in high-intensity laser systems. Ongoing efforts to improve the laser-damage threshold and minimize optical losses caused by scatter are essential to realizing a practical device. Scalability of the process to meter-scale substrates is also explored.
47 OTHER INSTRUMENTATION↗
Power balancing a multibeam laser
Multibeam lasers often require an output beam balance that specifies the degree of simultaneity of the laser output energy, instantaneous power, or instantaneous irradiance (power per unit area). Here, this work describes the general problem of balancing a multibeam laser. Specific techniques used to balance the output power of the 60-beam pulsed OMEGA Laser System are discussed along with a measured reduction of beam-to-beam imbalance. In particular, the square-pulse distortion induced by a simple saturating amplifier operating with its output at some fraction of its saturation fluence is derived, and a method to exchange gain between saturated amplifiers in a single beam that have different saturation fluences to adjust balance is described.
47 OTHER INSTRUMENTATION↗