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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Octahedral rotations in Ruddlesden-Popper layered oxides under pressure from first principles

The combination of reduced dimensionality and tunable structural distortions in layered perovskite oxides makes these materials ideal platforms for designing novel properties and functionalities. One example is hybrid improper ferroelectricity in n = 2 Ruddlesden-Popper oxides, where the combination of a layered crystal structure and rotations of the metal-oxide octahedra break symmetry and induce a polarization. Precisely controlling the octahedral rotation distortions, for example by the application of hydrostatic pressure, provides a pathway to tune and optimize the properties of these materials. Here we combine group theoretic methods, density functional theory calculations, and Landau theory analysis to investigate how octahedral rotations respond to pressure in the hybrid improper ferroelectrics Sr 3 Zr 2 O 7 , Ca 3 Ti 2 O 7 , and Sr 3 Sn 2 O 7 . We find that factors that are known to control the pressure response of ABO 3 perovskites—the formal charge of the A- and B-site cations, tolerance factor, and B-site chemistry—also impact the pressure response of these layered perovskites. We also show that coupling between the octahedral rotation and strain order parameters plays a key role in determining the overall pressure response. Despite some similarities, we find that these layered perovskites display a distinct pressure response compared to their ABO 3 perovskite analogs. By identifying trends and underlying mechanisms that control octahedral rotations in Ruddlesden-Popper oxides under pressure, this work lays the foundation for tailoring the structure and properties of these materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Electric field tunable layer polarization in graphene/boron-nitride twisted quadrilayer superlattices

The recently observed unconventional ferroelectricity in AB bilayer graphene sandwiched by hexagonal boron nitride (hBN) presents a new platform to manipulate correlated phases in multilayered van der Waals heterostructures [Zheng et al., Nature 588, 71 (2020).]. Here, we present a low-energy continuum model for AB bilayer graphene encapsulated by the top and bottom layers of either hBN or graphene, with two independent twist angles. For the graphene/hBN heterostructures, we show that twist angle asymmetry leads to a layer polarization of the valence and conduction bands. We also show that an out-of-plane displacement field not only tunes the layer polarization but also flattens the low-energy bands. We extend the model to show that the electronic structures of quadrilayer graphene heterostructure consisting of AB bilayer graphene encapsulated by the top and bottom graphene layers can similarly be tuned by an external electric field.

Zhu, Ziyan↗
DOE OSTI2023

Charge order and superconductivity in a two-band model for infinite-layer nickelates

The recent discovery of superconductivity in infinite-layer nickelates has drawn considerable attention; however, a consensus on the fundamental building blocks and common ingredients necessary to understand and describe their ground states and emergent properties is lacking. A series of experimental and theoretical studies have suggested that an effective two-band Hubbard model with Ni 3d x 2 -y 2 and rare-earth (R) 5d character may describe the low-energy physics. In this report we study the ground state properties of this two-band model on four-leg cylinders using the density-matrix renormalization group (DMRG) technique to better grasp whether such a simple model can embody the essential physics. A key difference compared to single-band Hubbard materials is that the system is self-doped: even at overall half-filling, the R-band acts as an electron reservoir, hole-doping the Ni-layer and fundamentally altering the physics expected from an undoped antiferromagnet. On the four-leg cylinder, the ground state is consistent with a Luttinger liquid, with anti-phase modulations of the charge density in the Ni- and R-layers having corresponding wavevectors that lock together. Light hole doping away from 1/2 filling releases the locking between the Ni and the R charge modulations, as the electron density in the R-band decreases and eventually becomes exhausted at a hole doping concentration that depends sensitively on the effective splitting between the Ni and the R orbitals. The ground state of the doped system is consistent with a Luther-Emery liquid, possessing quasi-long-range superconducting correlations in the Ni layer, similar to the single-band Hubbard model. Our results are consistent with experimental observations and may help to reveal the microscopic mechanism for pairing and other emergent properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Alpha heating of indirect-drive layered implosions on the National Ignition Facility

We report in order to understand how close current layered implosions in indirect-drive inertial confinement fusion are to ignition, it is necessary to measure the level of alpha heating present. To this end, pairs of experiments were performed that consisted of a low-yield tritium–hydrogen–deuterium (THD) layered implosion and a high-yield deuterium–tritium (DT) layered implosion to validate experimentally current simulation-based methods of determining yield amplification. The THD capsules were designed to reduce simultaneously DT neutron yield (alpha heating) and maintain hydrodynamic similarity with the higher yield DT capsules. The ratio of the yields measured in these experiments then allowed the alpha heating level of the DT layered implosions to be determined. The level of alpha heating inferred is consistent with fits to simulations expressed in terms of experimentally measurable quantities and enables us to infer the level of alpha heating in recent high-performing implosions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Observation of Nonaxisymmetric Standard Magnetorotational Instability Induced by a Free-Shear Layer

The standard magnetorotational instability (SMRI) with a magnetic field component parallel to the rotation axis is widely believed to be responsible for the fast accretion in astronomical disks. In conventional base flows with a Keplerian profile or an ideal Couette profile, most studies focus on axisymmetric SMRI, since excitation of nonaxisymmetric SMRI in such flows requires a magnetic Reynolds number (Rm) more than an order of magnitude larger. Here, we report that, in a magnetized Taylor-Couette flow, nonaxisymmetric SMRI with an azimuthal mode number m = 1 can be triggered by a free-shear layer in the base flow at Rm ≳1, the same threshold as for axisymmetric SMRI. Global linear analysis reveals that the free-shear layer reduces the required Rm, possibly by introducing an extremum in the vorticity of the base flow. Nonlinear simulations validate the results from linear analysis and confirm that a novel instability recently discovered experimentally [Wang et al., Nat. Commun. 13, 4679 (2022)] is the nonaxisymmetric m =1 SMRI. Further, our finding has astronomical implications as free-shear layers are ubiquitous in celestial systems, such as the disk-star boundary layer, the solar tachocline, and the edge of planet-opened gaps in protoplanetary disks.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2020

In situ x-ray studies of the incipient ZnO atomic layer deposition on In 0.53 Ga 0.47 As

We describe in detail how ZnO films grow on In 0.53 Ga 0.47 As substrates by atomic layer deposition (ALD), employing a suite of in situ synchrotron x-ray techniques. Combining results from different measurements allows the distinguishment of three different growth behaviors: an initial, slow linear growth, often referred to as a growth delay (regime I), followed by a nonlinear growth (regime II), and finally, a steady, linear growth (regime III), the last of which is the self-limited growth behavior characteristic of ALD. By the end of regime I, the In 0.53 Ga 0.47 As surface is covered with an ultrathin, poorly ordered Zn oxide layer. The transition from regime I to II is clearly evidenced by the appearance in the x-ray absorption spectra of characteristic features of the wurtzite structure, as well as the nucleation and growth of ZnO grains (three-dimensional) on top of the poorly ordered Zn oxide layer. Regime II ends when the growth per cycle reaches a constant level. We show that the water pressure during growth has an impact on the duration of the growth delay (regime I), unlike the substrate temperature. In the regime of steady growth, we observe that the rate of deposition obtained for all temperatures inside the ALD window is 0.17 nm cy(-1). The deposition temperature has clear effects on the film texture and initial crystallization behavior, as well as the final crystallinity and thicknesses of the layers adjacent to the In 0.53 Ga 0.47 As substrate. Based on the experimental results and earlier ab initio calculations and Monte Carlo simulations of ZnO ALD on ZnO, we suggest reaction mechanisms consistent with our findings, and we present a model of growth starting from the very earliest stages of deposition to the steady growth regime.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Buffer-layer-controlled nickeline vs zinc-blende/wurtzite-type MnTe growths on c -plane Al 2 O 3 substrates

In the recent past, MnTe has proven to be a crucial component of the intrinsic magnetic topological insulator (IMTI) family [MnTe] m [Bi2Te 3 ] n , which hosts a wide range of magneto-topological properties depending on the choice of m and n. However, bulk crystal growth allows only a few combinations of m and n for these IMTIs due to the strict limitations of the thermodynamic growth conditions. One way to overcome this challenge is to utilize atomic layer-by-layer molecular beam epitaxy (MBE) technique, which allows arbitrary sequences of [MnTe]m and [Bi 2 Te 3 ] n to be formed beyond the thermodynamic limit. For such MBE growth, finding optimal growth templates and conditions for the parent building block, MnTe, is a key requirement. Here, we report that two different hexagonal phases of MnTe - nickeline (NC) and zinc-blende/wurtzite (ZB-WZ) structures, with distinct in-plane lattice constants of 4.20 ± 0.04 Å and 4.39 ± 0.04 Å, respectively - can be selectively grown on c-plane Al 2 O 3 substrates using different buffer layers and growth temperatures. Moreover, we provide the first comparative studies of different MnTe phases using atomic-resolution scanning transmission electron microscopy and show that ZB and WZ-like stacking sequences can easily alternate between the two. Surprisingly, In 2 Se 3 buffer layer, despite its lattice constant (4.02 Å) being closer to that of the NC phase, fosters the ZB-WZ instead, whereas Bi 2 Te 3 , sharing the same lattice constant (4.39 Å) with the ZB-WZ phase, fosters the NC phase. Furthermore, these discoveries suggest that lattice matching is not always the most critical factor determining the preferred phase during epitaxial growth. Overall, this will deepen our understanding of epitaxial growth modes for chalcogenide materials and accelerate progress toward new IMTI phases as well as other magneto-topological applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

A Four-Layer Cyber-Physical Security Model for Electric Machine Drives Considering Control Information Flow

Despite the IEEE Power Electronics Society (PELS) establishing Technical Committee 10 on Design Methodologies with a focus on the cyber-physical security of power electronics systems, a holistic design methodology for addressing security vulnerabilities remains underdeveloped. This gap largely stems from the limited integration of computer science and power/control engineering studies in this interdisciplinary field. Addressing the inadequacy of unilateral cyber or control perspectives, this article presents a novel four-layer cyber-physical security model specifically designed for electric machine drives. Central to this model is the innovative control information flow (CIF) model, residing within the control layer, which serves as a pivotal link between the cyber layer's vulnerable resources and the physical layer's state-space models. By mapping vulnerable resources to control variable space and tracing attack propagation, the CIF model facilitates accurate impact predictions based on tainted control laws. The effectiveness and validity of this proposed model are demonstrated through hardware experiments involving two typical cyber-attack scenarios, underscoring its potential as a comprehensive framework for multidisciplinary security strategies.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

Laser Crystallization and Dopant Activation of a-Si:H Carrier-Selective Layer in TOPCon Si Solar Cells

Herein, we present a pulsed-laser processing method for crystallization and dopant activation of a highly n-doped amorphous silicon (a-Si:H) carrier-selective layer in a tunnel oxide passivated contact (TOPCon) Si solar cell structure. Here, the laser method provides enhanced conductivity and implied open circuit voltage while reducing emitter saturation current density and surface heating, as opposed to conventional high-temperature furnace annealing of the bulk Si wafer with a TOPCon structure. We identify an appropriate laser wavelength, fluence, and layer thickness using modeling and simulations. Raman and Hall effect measurements demonstrate increased crystallinity and dopant activation, whereas photoconductive decay shows enhanced surface and interface passivation quality. Additionally, we examine the role of subsequent SiNx deposition on further improving the passivation of laser-processed TOPCon layers to achieve a 5.9 kΩ/sq film sheet resistance, 2 ms effective carrier lifetime, 718 mV implied open-circuit voltage (iVOC), and 8.6 fA/cm 2 one-side recombination current density (J0) with the potential for further passivation improvement via laser process and a-Si layer thickness optimization.

14 SOLAR ENERGY↗
DOE OSTI2022

Drying of a Fully Saturated Porous Medium With Excess Water Layers: A Numerical Study

Abstract Drying of moist porous media can be very energy inefficient. For example, in the pulp and paper industry, paper drying consumes more than two-thirds of the total energy used in paper machines. Novel drying technologies can decrease the energy used for drying and lessen the manufacturing processes' carbon footprint. Developing next-generation drying technologies to dry moist porous media may require an understanding of removing moisture from a fully saturated porous material with excess water. This paper provides a fundamental understanding of heat and mass transfer in a fully saturated porous medium with excess water. This is relevant, for example, in drying tissue as well as pulp or paper for the purpose of thermal insulation where pressing is preferred to be avoided to overcome the reduction in the sheet thickness. For this purpose, a theoretical drying model is developed where the porous medium corresponds to paper and is assumed to be sandwiched between two excess-water layers (bottom and top). The conjugate model consists of energy and mass conservation equations for each layer. The model is validated with corresponding experimental data. In the model, the thickness of each water layer is calculated as a function of drying time based on local temperature and total moisture content. The numerical model is transient and one-dimensional in space (i.e., in the thickness direction). This paper demonstrates the governing equations, boundary conditions, and results when the saturated porous medium with water layers is heated from one side. Moisture and temperature profiles are estimated in the thickness direction of the porous medium as it dries.

Engineering↗
DOE OSTI2020

Investigation of the electrical behavior of AlGaN/GaN high electron mobility transistors grown with underlying GaN:Mg layer

In the current study, the electrical behavior of the AlGaN/GaN high electron mobility transistors (HEMTs) grown with an underlying GaN:Mg layer is detailed. It is shown that the activation of the buried p-GaN layer is achieved without hydrogen diffusion out of the layer. Reversal in the electrical behavior of the two-dimensional electron gas (2DEG) is also observed in the as-grown structure based on the p-GaN activation sequence. This behavior is attributed to the complex role played by hydrogen in the overgrown HEMT layers. The results of this study provide new insights into the development of metal organic chemical vapor deposition grown HEMTs with activated buried p-GaN films.

Mahaboob, Isra (ORCID:0000000171558130)↗
DOE OSTI2021

Scaling of atomic layer etching of SiO 2 in fluorocarbon plasmas: Transient etching and surface roughness

Fabricating sub-10 nm microelectronics places plasma processing precision at atomic dimensions. Atomic layer etching (ALE) is a cyclic plasma process used in semiconductor fabrication that has the potential to remove a single layer of atoms during each cycle. In self-limiting ideal ALE, a single monolayer of a material is consistently removed in each cycle, typically expressed as EPC (etch per cycle). In plasma ALE of dielectrics, such as SiO 2 and Si 3 N 4 , using fluorocarbon gas mixtures, etching proceeds through deposition of a thin polymer layer and the process is not strictly self-terminating. As a result, EPC is highly process dependent and particularly sensitive to the thickness of the polymer layer. In this paper, results are discussed from a computational investigation of the ALE of SiO 2 on flat surfaces and in short trenches using capacitively coupled plasmas consisting of a deposition step (fluorocarbon plasma) and an etch step (argon plasma). We found that ALE performance is a delicate balance between deposition of polymer during the first half cycle and etching (with polymer removal) during the second half cycle. In the absence of complete removal of the overlying polymer in each cycle, ALE may be transient as the polymer thickness grows with each cycle with a reduction in EPC until the thickness is too large to enable further etching. Small and statistical amounts of polymer left from a previous cycle can produce statistical variation in polymer thickness on the next cycle, which in turn can lead to a spatially dependent EPC and ALE roughness. Based on synergy between T i (sputtering time) and T p (passivation time), dielectric ALE can be described as having three modes: deposition, roughening surface (transitioning to etch-stop), and smooth surface with steady-state EPC.

Materials Science↗
DOE OSTI2021

Tunable and scalable fabrication of plasmonic dimer arrays with sub-10nm nanogaps by area-selective atomic layer deposition

Nanogaps in metallic nanostructures produce local field enhancements with potential applications in surface enhanced spectroscopy, solar energy conversion, and photocatalysis. Atomic layer deposition is applied as a conformal coating to modify nanogap sizes and tune the optical properties of plasmonic dimer arrays with sub-10 nm nanogaps. Nanostructures are fabricated using layers of gold and palladium to combine features of plasmonics and area-selective atomic layer deposition, where copper metal is deposited on palladium-covered surfaces. Direct measurements of optical extinction for successive smaller nanogaps and thicker copper coatings show that spectral features become broadened at first due to heating-induced shape changes but subsequently sharpen as copper coatings form on palladium structures. Furthermore, longitudinal resonances of plasmonic dimers blue shift for thin coatings due to heating and decreasing aspect ratio, but thicker coatings lead to red shifts due to narrowing nanogaps. Together, these results show that area-selective atomic layer deposition is a promising tool for achieving large area arrays of plasmonic dimers with sub-10 nm nanogaps.

Engineering↗
DOE OSTI2026

Plasma-assisted atomic layer etching of single-crystal diamond

Applications of near-surface nitrogen-vacancy (NV) centers in diamond are often limited by surface defects created during processing. Understanding and controlling plasma-induced surface damage is important for preserving the optical and spin properties of diamond NV centers. We report molecular dynamics simulations of a novel form of plasma-aided atomic layer etching of diamond. In this proposed scheme, the initial surface modification step consists of Ar + ion bombardment. This creates an amorphous layer at the surface, the thickness of which is controlled by the ion energy. Amorphization is known to help smooth the surface, at least locally, and would also serve to sputter clean an initially contaminated surface. A second step impacts the amorphous carbon layer with O + between about 1 and 5 eV. Simulations show that this energy range will remove the amorphous carbon but will not etch the underlying diamond. Though this energy range is not trivial to achieve in a conventional low-temperature plasma, potential methods for creating these low-energy O + ions are discussed. In addition to a-C etching, the O + impacts are predicted to remove any isolated (100) diamond terraces by selectively attacking the edges of the terraces. The proposed atomic layer etching (ALE) approach reverses the conventional ALE sequence in which the surface modification step is usually chemical modification (oxidation in this case), followed by a removal step using Ar + impacts. This plasma ALE procedure is predicted to create a diamond surface that is atomically flat and defect free.

Draney, J. S. [Princeton University, NJ (United St↗
DOE OSTI2020

Modeling thin layers of analytes on substrates for spectral analysis: use of solid/liquid n and k values to model reflectance spectra

Since solids are only sometimes seen en masse in a pure bulk form, and for liquids other than water almost never, a capability to model reflectance spectra from analytes deposited on various substrates would be highly advantageous. If available, the real, n ( ν ) , and imaginary, k ( ν ) , components of the complex refractive index, n n + i k , can be used to simulate infrared spectra, accounting for reflection, refraction, and absorption phenomena as a function of wavelength. We focus on using the Pacific Northwest National Laboratory (PNNL) derived n / k vectors for solid and liquid analytes deposited as thin layers on different types of substrates including conductors, such as aluminum, and inorganic dielectrics, such as glass. The model is an adaptation of the Monte Carlo ray trace modeling program, TracePro, extended through the use of its macrolanguage. The model is tested using thin films of organic liquids including silicone oil and no. 2 diesel fuel, as well as organic solids such as caffeine and acetaminophen on aluminum and glass. The predicted spectra for the solid films were compared to experimental hemispherical reflectance data measured using a Fourier transform spectrometer with an integrating sphere. The thickness of the calculated layer is a parameter for predicting the (transflectance) spectra and is obtained using the areal density measured from gravimetric methods to generate the thin-layer samples. Comparison of the calculated spectra with experimental hemispherical reflectance data shows excellent agreement, indicating promise for the use of measured n / k data to synthesize reference spectral data. In particular, accounting for the inhomogeneity of the deposits greatly improved the match with experimental data. Finally, the theoretical modeling shows that for thicker layers (ca. 20 to 100 μm) of typical organics possessing moderately strong k values, the longwave infrared features are often saturated and better spectral contrast is obtained from the overtone/combination bands in the shortwave infrared.

42 ENGINEERING↗
DOE OSTI2022

Atomically engineered cobaltite layers for robust ferromagnetism

Emergent phenomena at heterointerfaces are directly associated with the bonding geometry of adjacent layers. Effective control of accessible parameters, such as the bond length and bonding angles, offers an elegant method to tailor competing energies of the electronic and magnetic ground states. In this study, we construct unit-thick syntactic layers of cobaltites within a strongly tilted octahedral matrix via atomically precise synthesis. The octahedral tilt patterns of adjacent layers propagate into cobaltites, leading to a continuation of octahedral tilting while maintaining substantial misfit tensile strain. These effects induce severe rumpling within an atomic plane of neighboring layers, further triggering the electronic reconstruction between the splitting orbitals. First-principles calculations reveal that the cobalt ions transit to a higher spin state level upon octahedral tilting, resulting in robust ferromagnetism in ultrathin cobaltites. This work demonstrates a design methodology for fine-tuning the lattice and spin degrees of freedom in correlated quantum heterostructures by exploiting epitaxial geometric engineering.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Spatiotemporal Visualization and Chemical Identification of the Metal Diffusion Layer at the Electrochemical Interface

The diffusion layer created by transition metal dissolution is ubiquitous at the electrochemical solid-liquid interface and plays a key role in determining electrochemical performance. Tracking the spatiotemporal dynamics of the diffusion layer has remained an unresolved challenge. With spatially resolved synchrotron X-ray fluorescence microscopy and micro-X-ray absorption spectroscopy, we demonstrate the in situ visualization and chemical identification of the dynamic diffusion layer near the electrode surface under electrochemical operating conditions. Finally, our method allows for direct mapping of the reactive electrochemical interface and provides insights into engineering the diffusion layer for improving electrochemical performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Radar Retrieval Evaluation and Investigation of Dendritic Growth Layer Polarimetric Signatures in a Winter Storm

Abstract This study evaluates ice particle size distribution and aspect ratio φ Multi-Radar Multi-Sensor (MRMS) dual-polarization radar retrievals through a direct comparison with two legs of observational aircraft data obtained during a winter storm case from the Investigation of Microphysics and Precipitation for Atlantic Coast-Threatening Snowstorms (IMPACTS) campaign. In situ cloud probes, satellite, and MRMS observations illustrate that the often-observed K dp and Z DR enhancement regions in the dendritic growth layer can either indicate a local number concentration increase of dry ice particles or the presence of ice particles mixed with a significant number of supercooled liquid droplets. Relative to in situ measurements, MRMS retrievals on average underestimated mean volume diameters by 50% and overestimated number concentrations by over 100%. IWC retrievals using Z DR and K dp within the dendritic growth layer were minimally biased relative to in situ calculations where retrievals yielded −2% median relative error for the entire aircraft leg. Incorporating φ retrievals decreased both the magnitude and spread of polarimetric retrievals below the dendritic growth layer. While φ radar retrievals suggest that observed dendritic growth layer particles were nonspherical (0.1 ≤ φ ≤ 0.2), in situ projected aspect ratios, idealized numerical simulations, and habit classifications from cloud probe images suggest that the population mean φ was generally much higher. Coordinated aircraft radar reflectivity with in situ observations suggests that the MRMS systematically underestimated reflectivity and could not resolve local peaks in mean volume diameter sizes. These results highlight the need to consider particle assumptions and radar limitations when performing retrievals. significance statement Developing snow is often detectable using weather radars. Meteorologists combine these radar measurements with mathematical equations to study how snow forms in order to determine how much snow will fall. This study evaluates current methods for estimating the total number and mass, sizes, and shapes of snowflakes from radar using images of individual snowflakes taken during two aircraft legs. Radar estimates of snowflake properties were most consistent with aircraft data inside regions with prominent radar signatures. However, radar estimates of snowflake shapes were not consistent with observed shapes estimated from the snowflake images. Although additional research is needed, these results bolster understanding of snow-growth physics and uncertainties between radar measurements and snow production that can improve future snowfall forecasting.

Meteorology & Atmospheric Sciences↗