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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Atomic-layer deposited thulium oxide as a passivation layer on germanium

A comprehensive study of atomic-layer deposited thulium oxide (Tm{sub 2}O{sub 3}) on germanium has been conducted using x-ray photoelectron spectroscopy (XPS), vacuum ultra-violet variable angle spectroscopic ellipsometry, high-resolution transmission electron microscopy (HRTEM), and electron energy-loss spectroscopy. The valence band offset is found to be 3.05 ± 0.2 eV for Tm{sub 2}O{sub 3}/p-Ge from the Tm 4d centroid and Ge 3p{sub 3/2} charge-corrected XPS core-level spectra taken at different sputtering times of a single bulk thulium oxide sample. A negligible downward band bending of ∼0.12 eV is observed during progressive differential charging of Tm 4d peaks. The optical band gap is estimated from the absorption edge and found to be 5.77 eV with an apparent Urbach tail signifying band gap tailing at ∼5.3 eV. The latter has been correlated to HRTEM and electron diffraction results corroborating the polycrystalline nature of the Tm{sub 2}O{sub 3} films. The Tm{sub 2}O{sub 3}/Ge interface is found to be rather atomically abrupt with sub-nanometer thickness. In addition, the band line-up of reference GeO{sub 2}/n-Ge stacks obtained by thermal oxidation has been discussed and derived. The observed low reactivity of thulium oxide on germanium as well as the high effective barriers for holes (∼3 eV) and electrons (∼2 eV) identify Tm{sub 2}O{sub 3} as a strong contender for interfacial layer engineering in future generations of scaled high-κ gate stacks on Ge.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effect of gas velocity on the weakly nonlinear instability of a planar viscous sheet

A weakly nonlinear spatial instability of a two-dimensional planar viscous sheet for sinuous disturbances in a co-flowing inviscid gas stream is investigated theoretically, with an emphasis on the effect of the surrounding gas velocity. The solutions of the second-order interface disturbances are derived and the wave deformation has been computed. The results indicate that the second-order surface disturbance of the fundamental sinuous mode is varicose, which causes the thinning and the subsequent breakup of the liquid sheet. The nonlinear behaviors of the planar sheet are quite sensitive to variations in gas-to-liquid velocity ratio. The deviation of the velocity ratio from the value of unity leads to a larger growth rate, a larger second-order initial amplitude, and a shorter breakup length, and therefore enhances the instability. The growth rates predicted by the present nonlinear analysis according to the shortest breakup length are generally smaller than the linear predictions and can better conform to the experimental measures of Barreras et al. [“Linear instability analysis of the viscous longitudinal perturbation on an air-blasted liquid sheets,” Atomization Sprays 11, 139 (2001)]. Furthermore, the wave deformations of the most unstable disturbances are presented. The nonlinear instability of the planar sheet for a fixed velocity difference is performed. An equal increase of the gas and liquid velocity reduces the spatial growth rate and increases the breakup length, but generally has no influences on the second-order initial amplitude and the wavelength of the disturbance.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Phonon modes and electron–phonon coupling at the FeSe/SrTiO 3 interface

The remarkable increase in superconducting transition temperature (T c ) observed at the interface of one-unit-cell FeSe films on SrTiO3 substrates (1 uc FeSe/STO) has attracted considerable research into the interface effects. Although this high T c is thought to be associated with electron-phonon coupling (EPC), the microscopic coupling mechanism and its role in the superconductivity remain elusive. Here we use momentum-selective high-resolution electron energy loss spectroscopy to atomically resolve the phonons at the FeSe/STO interface. We uncover new optical phonon modes, coupling strongly with electrons, in the energy range of 75-99 meV. These modes are characterized by out-of-plane vibrations of oxygen atoms in the interfacial double-TiO x layer and the apical oxygens in STO. Our results also demonstrate that the EPC strength and superconducting gap of 1 uc FeSe/STO are closely related to the interlayer spacing between FeSe and the TiOx terminated STO. These findings shed light on the microscopic origin of the interfacial EPC and provide insights into achieving large and consistent T c enhancement in FeSe/STO and potentially other superconducting systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Molecular dynamics study of Si(100)-oxidation: SiO and Si emissions from Si/SiO{sub 2} interfaces and their incorporation into SiO{sub 2}

Dynamics of Si(100)-oxidation processes at the Si/SiO{sub 2} interface and in the SiO{sub 2} region are investigated focusing on SiO and Si emissions from the interface and the following incorporation into the SiO{sub 2} and/or substrate. Classical molecular dynamics (MD) simulations with variable charge interatomic potentials are performed to clarify these atomic processes. By incorporating oxygen atoms, two-folded Si atoms are formed after structural relaxation at the interface and are emitted as SiO molecules into SiO{sub 2}. The energy barrier of the SiO emission is estimated to be 1.20 eV on the basis of the enthalpy change in an MD simulation. The emitted SiO molecule is incorporated into the SiO{sub 2} network through a Si-O rebonding process with generating an oxygen vacancy. The energy barrier of the SiO incorporation is estimated to be 0.79–0.81 eV. The elementary process of oxygen vacancy diffusion leading to the complete SiO incorporation is also simulated, and the energy barriers are found to be relatively small, 0.71–0.79 eV. The energy changes of Si emissions into the substrate and SiO{sub 2} are estimated to be 2.97–7.81 eV, which are larger than the energy barrier of the SiO emission. This result suggests that, at the ideally flat Si/SiO{sub 2} interface, the SiO emission into the SiO{sub 2} region occurs prior to the Si emission, which is consistent with previous theoretical and experimental studies. The above mentioned typical atomic processes are successfully extracted from some (or one) of MD simulations among many trials in which a statistical procedure is partly employed. Our results give a unified understanding of Si oxidation processes from an atomistic point of view.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Atom Probe Tomography for the Observation of Hydrogen in Materials: A Review

Atom probe tomography (APT) is an emerging microscopy technique that has high sensitivity for hydrogen with sub-nanometre-scale spatial resolution, which makes it a unique method to investigate the atomic-scale distribution of hydrogen at interfaces and defects in materials. This article introduces the basics of APT-based hydrogen analysis, particularly the challenge of distinguishing a hydrogen background signal in APT by using hydrogen isotopes, along with strategies to yield high-quality analysis. This article also reviews several important findings on hydrogen distribution in a range of materials, including both structural alloys and functional materials, enabled by using APT. Limitations and future opportunities for hydrogen analysis by APT are also discussed.

42 ENGINEERING↗
DOE OSTI2026

Temperature dependent interfacial microstructure in HIP-bonded Al6061/Zr joints

Pressing (HIP) at 450 °C and 560 °C under 103 MPa for 90 minutes to evaluate interfacial diffusion and microstructural evolution. Sound metallurgical bonding was achieved at both temperatures, with Zr serving as an effective diffusion barrier. Microstructural analysis revealed the the formation of a (Al,Si)3Zr intermetallic layer at the Al/Zr interface, whose thickness increased from ~100 nm at 450 °C to ~2100 nm at 560 °C, consistent with temperature-driven diffusion kinetics. The thin and continuous reaction layer observed at 450 °C indicates controlled interdiffusion and minimal reaction zone growth, favorable for maintaining interface stability and ductility. At 560 °C, enhanced atomic mobility led to pronounced intermetallic development, confirming diffusion-controlled growth behavior. These results provide valuable insights for optimizing Al/Zr interface design and diffusion barrier performance in advanced structural and energy systems.

Al/Zr interface↗
DOE OSTI2020

Stabilization of Hydroxide Ions at the Interface of a Hydrophobic Monolayer on Water via Reduced Proton Transfer

We report a joint study using surface-specific sum-frequency vibrational spectroscopy and ab initio molecular dynamics simulations, respectively, on a pristine hydrophobic (sub)monolayer hexane-water interface, namely, the hexane/water interface with varied vapor pressures of hexane and different pHs in water. We show clear evidence that hexane on water revises the interfacial water structure in a way that stabilizes the hypercoordinated solvation structure and slows down the migration of hydroxide ion (OH – ) relative to that in bulk water. Furthermore, this mechanism effectively attracts the OH – to the water-hydrophobic interface with respect to its counterion. The result illustrates the striking difference of proton transfer of hydrated OH – at the interface and in the bulk, which is responsible for the intrinsic charging effect at the hydrophobic interface.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

Interfaces enhanced plasma irradiation resistance in CrMoTaWV/W multilayer films through blocking He diffusion

The performance of plasma-facing materials (PFMs) is one of the key factors that significantly impact the stability of operation in fusion reactors. Herein, a new CrMoTaWV/W (high entropy alloy (HEA)/W) multilayer structure is designed as PFM to investigate its resistance to He plasma irradiation. It was observed that the introduction of the interfaces effectively absorbed plenty of He atoms, preventing them from diffusing into the material and delaying the formation of fuzz incubation zone, therefore, enhancing the resistance to plasma irradiation. The thickness transformed to fuzz in the HEA/W multilayer films was observed to be about two-thirds of those in the CrMoTaWV (HEA) film. Additionally, the fuzz growth rates in HEA/W multilayer films are lower than the average growth rate of bulk W and HEA films combined. These findings highlight a promising new avenue for the exploration of high-performance PFMs.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Machine learning guided prediction of solute segregation at coherent and semi-coherent metal/oxide interfaces

Investigation of semi-coherent metal/oxide interfaces with misfit dislocations using density functional theory (DFT) is computationally intensive to the point of being prohibitive, as it involves several hundreds to many thousands of atoms. In this study, we examined the solute segregation behavior at the Fe/Y 2 O 3 interface—a model interface for cladding applications in nuclear fission reactors—using a combination of DFT calculations and machine learning (ML) approaches. Both coherent and semi-coherent interfaces were considered. ML models were trained on DFT-calculated segregation energies to identify the key chemical, geometric and strain energy related features that govern solute segregation behavior at coherent Fe/Y 2 O 3 interfaces. Furthermore, it was found that ML models when trained on DFT calculated segregation energy of elements at a coherent interface, comprising of about a hundred-atom supercell, can predict the segregation energy of elements at a semi-coherent Fe/Y 2 O 3 interface (with multiple hundreds of atoms) at a fraction of computational cost (1/35th), with an accuracy comparable to DFT calculations.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2023

Strengthening model development and effects of low diffusing solutes to coarsening resistance in aluminum alloys

A modified Orowan strengthening model is proposed to account for finite rod-shaped precipitates with hemispherical caps in aluminum alloy systems. A combined computational and experimental approach is used to study the influences of anisotropic Orowan looping and solute-dislocation interaction on temperature-dependent yield strength. Here, the strengthening model is validated with a dataset containing 297 experimental precipitate geometries, chemistries, temperatures, and strength measurements, and achieves a strong predictive correlation of 0.8713 with experimentally measured yield strengths. Under conditions that are applicable to coarsening, constant particle volume fraction and aspect ratio, the model predicts that short rod precipitates provide far superior strengthening effects compared to plate precipitates. A cast Al-Si-Mg-Cu alloy with rod-shaped Q-phase (Al 3 Cu 2 Mg 9 Si 7 ) precipitates was developed with a novel chemistry exploring the use of low-diffusivity elements (Mn, Ni, V, Zr) to limit precipitate coarsening. The thermodynamic behavior of Mn, Ni, V, and Zr across the Q-phase interface is examined using transmission electron microscopy (TEM), first-principles density-functional theory (DFT) calculations. and atom-probe tomography (APT). DFT calculations utilizing TEM identified Q-phase/Al-matrix interfaces show that Mn, Ni, V, and Zr preferentially segregate to the Q-phase precipitate boundaries which suggests inhibition of precipitate coarsening and higher strengths after temperature exposure. Atom-probe tomography confirms solute atom partitioning/segregation at the Q-phase/Al-matrix interface, found in the modified commercial AS7GU alloy (A356 +0.5%Cu), which supports these observations.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Deconvoluting Effects of Lithium Morphology and SEI Stability at Moderate Current Density Using Interface Engineering

Lithium (Li)-morphology and solid electrolyte interphase (SEI) are among the most significant performance regulators in Li-metal batteries (LMBs). While both Li-morphology and SEI composition play key roles in the cyclability of LMBs, less is understood about the individual contributions of each factor to overall Li reversibility, particularly at a practical current density (1 mA cm −2 ) at which the kinetics of both factors are not naturally separated. Herein, an interface engineering approach is introduced to deconvolute the impacts of Li-morphology and SEI composition on battery performance. By using interfacial nanofilms with differing resistivity (resistive HfO 2 versus conductive ZnO), the morphology of Li is varied, and by virtue of similar acidic character of the nanofilms, the formation of anion-rich SEIs is maintained. It is established that although the surface acidity of the thin films enables preformation of a more anion-rich SEI, it is not preserved after Li plating. It is further shown that resistance-controlled, low-surface-area Li-morphology exhibits up to threefold increase in stable cycle life when tested in multiple electrolytes. Overall, these findings explain why Li-morphological control is more advantageous for performance improvement than preformed SEI modulation due to the inherent challenges in SEI preservation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Bulk vs Intrinsic Activity of NiFeO x Electrocatalysts in the Oxygen Evolution Reaction: The Influence of Catalyst Loading, Morphology, and Support Material

We used a combination of ultrahigh vacuum surface science techniques, X-ray spectroscopy, electrochemistry, and density functional theory (DFT), to characterize the influence of catalyst morphology, loading/coverage, and substrate material on the bulk (all atoms) and intrinsic (electrochemically accessible atoms) activity of NiFeO x electrocatalysts in the oxygen evolution reaction (OER). NiFeO x catalysts were grown on both Au(111) and highly oriented pyrolytic graphite (HOPG) electrodes. DFT predicted Fe edge-site atoms at the NiFeO x /Au(111) interface to be the most thermodynamically favorable reaction center, and X-ray absorption spectroscopy data indicated small NiFeO x catalyst particles on Au(111) contained a high population of OER active Fe edge-site atoms. However, restructuring of the Au(111) surface due to repeated oxidation and reduction cycles of the OER CV measurements encapsulated small NiFeO x nanoparticles at catalyst loadings below ~1.5 nmol metal /cm 2 , passivated catalyst edges and reduced bulk OER activity of Au-supported NiFeO x compared with HOPG-supported ones. Analysis of intrinsic activity revealed that the Au(111) support strongly benefited electrochemically accessible NiFeO x atoms, and we observed a 2–3 fold activity enhancement compared with HOPG-supported catalysts for loadings above ~1 nmol metal /cm 2 . Overall, evaluating bulk vs intrinsic activity and identifying loading/coverage-dependent support effects is important for accurately probing fundamental interfacial chemistry, choosing suitable catalyst loadings and supports, and optimizing system parameters to maximize the performance of electrocatalyst systems.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Epitaxial Thin Films of a Chalcogenide Perovskite

Chalcogenide perovskites have emerged as a new class of optoelectronic materials, especially for photovoltaic applications, but fundamental properties and applications of chalcogenide perovskites remain limited due to the lack of high-quality thin films. In this paper, we report direct epitaxial thin film growth of BaZrS 3 , a prototypical chalcogenide, by pulsed laser deposition. X-ray diffraction studies show that the films are strongly textured out-of-plane and have a clear in-plane epitaxial relationship with the substrate. Electron microscopy studies confirm the presence of epitaxy for the first few layers of the film at the interface, even though away from the interface, the films are polycrystalline with many extended defects, suggesting the potential for further improvement in growth. X-ray reflectivity and atomic force microscopy show smooth film surfaces and interfaces between the substrate and the film. The films show strong light absorption near the band edge and photoluminescence in the visible region, validating BaZrS 3 as a suitable candidate for ultrathin front absorbers in tandem solar cells. The photodetector devices show fast and efficient photo response with the highest ON/OFF ratio reported for BaZrS 3 films thus far. Our study opens up opportunities to use high quality thin films of chalcogenide perovskites to probe fundamental physical phenomena in thin films and heterostructures and also in photovoltaic and optoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Effects of Absorber Near-Interface Compensation on Cd(Se,Te) Solar Cell Performance

Arsenic (As) has been shown to be an effective p-type dopant for CdTe, although high performance in As-doped devices remains difficult to achieve. Arsenic is prone to self-compensation in CdTe, as evidenced by the accumulation of dopant atoms in CdTe/Cd(Se,Te) near the interface with MgxZn1-xO (MZO). In this study, we use SCAPS 1D modeling software to investigate the effect of near-interface compensation, helping elucidate loss pathways in present-day As-doped devices and informing future growth directions. We consider three possible results of As accumulation: shallow donors, deep recombination centers, and a thin layer of excess acceptor accumulation. The reduction in near-interface carrier concentration caused by shallow donors is shown to improve open-circuit voltages (VOC), whereas deep levels are detrimental to all performance parameters. The thin charge layer affects capacitance-voltage (CV) measurements by reducing the depletion width while maintaining the same carrier concentration, replicating CV behavior that has been observed in actual devices. These results illustrate the importance of monitoring dopant accumulation within 100 nm of the interface, and suggest that reducing or eliminating the As concentration in this region would be beneficial. An undoped Cd(Se,Te) layer at the interface is suggested as a possible device structure to boost performance.

absorber↗
DOE OSTI2023

Exploiting Fixed Charge at Selective Contacts for Silicon Photovoltaics

The goal of this work was to examine and exploit fixed interface charges in ultra-thin (0-3 nm thickness) tunnel dielectric layers sandwiched between silicon and selective contact metal oxides (molybdenum oxide, MoO x , titanium oxide, TiO 2 ). Specifically, the interface fixed charge was varied by changing processing conditions and materials over a wide range and the effect on the current-voltage behavior and the Schottky barrier height was quantified. In budget period 1 (year 1), the objective was to grow aluminum oxide tunnel layers with quantified fixed charge over a range of ~1E12 to ~-2E12 cm -2 and combine these with MoO x and TiO 2 layers on Czochralsi (CZ) mono p- and n-Si, respectively. We sought conditions that maximize fixed charge and minimize Schottky barrier height to MoO x contacts to p-Si. This objective, along with investigating the effects of silicon surface terminations, occupied the majority of the project timeline (Q1-Q8) due to complications with high specific contact resistivity values. In the last two quarters of the project period, the objective was to insert HfO2 layers between Si and aluminum oxide layers to quench the fixed charge for layers with otherwise identical thermal history. Another objective was to lower the barrier height at TiO 2 -based contacts on n-type Si, but that was never investigated completely.

14 SOLAR ENERGY↗
NASA NTRS1973

Solid/liquid interfacial free energies in binary systems

Description of a semiquantitative technique for predicting the segregation characteristics of smooth interfaces between binary solid and liquid solutions in terms of readily available thermodynamic parameters of the bulk solutions. A lattice-liquid interfacial model and a pair-bonded regular solution model are employed in the treatment with an accommodation for liquid interfacial entropy. The method is used to calculate the interfacial segregation and the free energy of segregation for solid-liquid interfaces between binary solutions for the (111) boundary of fcc crystals. The zone of compositional transition across the interface is shown to be on the order of a few atomic layers in width, being moderately narrower for ideal solutions. The free energy of the segregated interface depends primarily upon the solid composition and the heats of fusion of the component atoms, the composition difference of the solutions, and the difference of the heats of mixing of the solutions.

Nason, D.↗
DOE OSTI2016

NON-LTE INVERSIONS OF THE Mg ii h and k AND UV TRIPLET LINES

The Mg ii h and k lines are powerful diagnostics for studying the solar chromosphere. They have become particularly popular with the launch of the Interface Region Imaging Spectrograph ( IRIS ) satellite, and a number of studies that include these lines have lead to great progress in understanding chromospheric heating, in many cases thanks to the support from 3D MHD simulations. In this study, we utilize another approach to analyze observations: non-LTE inversions of the Mg ii h and k and UV triplet lines including the effects of partial redistribution. Our inversion code attempts to construct a model atmosphere that is compatible with the observed spectra. We have assessed the capabilities and limitations of the inversions using the FALC atmosphere and a snapshot from a 3D radiation-MHD simulation. We find that Mg ii h and k allow reconstructing a model atmosphere from the middle photosphere to the transition region. We have also explored the capabilities of a multi-line/multi-atom setup, including the Mg ii h and k, the Ca ii 854.2 nm, and the Fe i 630.25 lines to recover the full stratification of physical parameters, including the magnetic field vector, from the photosphere to the chromosphere. Finally, we present the first inversions of observed IRIS spectra from quiet-Sun, plage, and sunspot, with very promising results.

79 ASTRONOMY AND ASTROPHYSICS↗