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At least 703 records · Page 39

Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance

We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the n-GaAs (001) surface. The FMR peak is detected as an interfacial voltage with a symmetric line shape and is present in samples based on various FM/n-GaAs heterostructures, including Co{sub 2}MnSi/n-GaAs, Co{sub 2}FeSi/n-GaAs, and Fe/n-GaAs. We show that the interface bias voltage dependence of the FMR signal is identical to that of the tunneling anisotropic magnetoresistance (TAMR) over most of the bias range. Furthermore, we show how the precessing magnetization yields a dc FMR signal through the TAMR effect and how the TAMR phenomenon can be used to predict the angular dependence of the FMR signal. This TAMR-induced FMR peak can be observed under conditions where no spin accumulation is present and no spin-polarized current flows in the semiconductor.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Influence of La substitution on ferromagnetic properties of lead free Na{sub 0.5}Bi{sub 0.5}Ti{sub 0.988}Fe{sub 0.012}O{sub 3} multiferroic system

To study the effect of La doping and processing temperature, (Na{sub 0.5}Bi{sub 0.5}){sub 1−x}La{sub x}Ti{sub 0.988}Fe{sub 0.012}O{sub 3} (NBLTF) samples have been prepared by sol-gel method by employing two approaches namely with and without mol% excess of Na and Bi. X-ray diffraction analysis confirms the formation of rhombohedral perovskite structure in these samples with minor impurity phases. However, the impurity phases of stochiometric NBLTF samples disappear on increasing the sintering temperature from 650°C to 850°C. On other hand, NBLTF samples prepared with mol% excess of Na and Bi have shown pure perovskite structure only at lower sintering temperature 650°C and also at low concentration of La ∼ 1%. Transmission electron microscope investigation shows nano crystalline formation for all NBLTF samples sintered at 850°C. The enhancement in room temperature ferromagnetism is observed in La doped NBTF samples prepared at 850°C by taking stoichiometric amount of Na and Bi during synthesis.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Effective spin- 1 2 scalar chiral order on kagome lattices in Nd 3 Sb 3 Mg 2 O 14

We introduce Nd 3 Sb 3 Mg 2 O 14 with ideal kagome lattices of neodymium ions in ABC stacking. Thermodynamic measurements show a Curie-Weiss temperature of Θ CW = – 0.12 K, a Nd 3+ spin- 1 2 Kramers doublet ground state, and a second-order phase transition at T N = 0.56 (2) K. Neutron scattering reveals noncoplanar scalar chiral k = 0 magnetic order with a correlation length exceeding 400 Å = 55a and an ordered moment of 1.79 (5) μ B . Furthermore, this order includes a canted ferromagnetic component perpendicular to the kagome planes favored by Dzyaloshinskii-Moriya interactions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Role of Magnetic Defects in Tuning Ground States of Magnetic Topological Insulators

Abstract Magnetic defects play an important, but poorly understood, role in magnetic topological insulators (TIs). For example, topological surface transport and bulk magnetic properties are controlled by magnetic defects in Bi 2 Se 3 ‐based dilute ferromagnetic (FM) TIs and MnBi 2 Te 4 (MBT)‐based antiferromagnetic (AFM) TIs. Despite its nascent ferromagnetism, the inelastic neutron scattering data show that a fraction of the Mn defects in Sb 2 Te 3 form strong AFM dimer singlets within a quintuple block. The AFM superexchange coupling occurs via Mn–Te–Mn linear bonds and is identical to the AFM coupling between antisite defects and the FM Mn layer in MBT, establishing common interactions in the two materials classes. It is also found that the FM correlations in (Sb 1− x Mn x ) 2 Te 3 are likely driven by magnetic defects in adjacent quintuple blocks across the van der Waals gap. In addition to providing answers to long‐standing questions about the evolution of FM order in dilute TI, these results also show that the evolution of global magnetic order from AFM to FM in Sb‐substituted MBT is controlled by defect engineering of the intrablock and interblock coupling.

36 MATERIALS SCIENCE↗

Mn 5 Si 3 Nanoparticles: Synthesis and Size-Induced Ferromagnetism

Mn-based silicides are fascinating due to their exotic spin textures and unique crystal structures, but the low magnetic ordering temperatures and/or small magnetic moments of bulk alloys are major impediments to their use in practical applications. In sharp contrast to bulk Mn 5 Si 3 , which is paramagnetic at room temperature and exhibits low-temperature antiferromagnetic ordering, we show ferromagnetic ordering in Mn 5 Si 3 nanoparticles with a high Curie temperature (T c ≈ 590 K). The Mn 5 Si 3 nanoparticles have an average size of 8.6 nm and also exhibit large saturation magnetic polarizations (J s = 10.1 kG at 300 K and 12.4 kG at 3 K) and appreciable magnetocrystalline anisotropy constants (K 1 = 6.2 Mergs/cm 3 at 300 K and at 12.8 Mergs/cm 3 at 3 K). Here, the drastic change of the magnetic ordering and properties in the nanoparticles are attributed to low-dimensional and quantum-confinement effects, evident from first-principle density-functional-theory calculations.

36 MATERIALS SCIENCE↗

Tailoring the magnetic properties of new Fe-Ni-Co-Al-(Ta,Nb)-B superelastic rapidly quenched microwires

Ferromagnetic Fe-Ni-Co-Al-(Ta,Nb)-B microwires with diameters from 170 μm to 50 μm, which possess both superelastic and good magnetic properties, have been prepared by rapid quenching from the melt using the in rotating water spinning technique followed by cold-drawing and ageing. The cold-drawing and annealing processes lead to the initialization of premartensitic phases as confirmed by the X-ray diffraction and scanning transmission electron microscopic investigations, more significantly in the 50 μm cold-drawn microwires. An increase in the coercive field and in the saturation magnetization has been obtained by annealing, more importantly in the case of Nb-containing alloy. Ageing by thermal or current annealing led to the initialization of the superelastic effect. High values of strain of up to 1.8%, very good repeatability under successive loading, and values of superelastic effect of up to 1.2% have been achieved. The structural analysis coupled with the stress-strain data suggests that these materials annealed at 800 °C have superelastic potential at reduced ageing times. The magnetic behavior was found to be easily tailored through both thermal and thermomagnetic treatments with changes in the magnetic parameters which can be contactless detected. The results are important for future applications where both mechanical and magnetic properties matter, i.e., sensing/actuating systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Structural, electronic, and magnetic properties of single MnAs nanoclusters in GaAs

MnAs nanoclusters in GaAs were investigated with cross-sectional scanning tunneling microscopy. The topographic images reveal that the small clusters have the same zinc-blende crystal structure as the host material, while the larger clusters grow in a hexagonal crystal phase. The initial Mn concentration during molecular beam epitaxy growth has a strong influence on the size of the clusters that form during the annealing step. The local band structure of a single MnAs cluster is probed with scanning tunneling spectroscopy, revealing a Coulomb blockade effect that correlates with the size of the cluster. With a spin-sensitive tip, for the smaller clusters, superparamagnetic switching between two distinct states is observed at T = 77 K. The larger clusters do not change their magnetic state at this temperature, i.e., they are superferromagnetic, confirming that they are responsible for the ferromagnetic behavior of this material at room-temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Frequency and field dependent dynamic properties of CoFe{sub 2−x}Al{sub x}O{sub 4} ferrite nanoparticles

Highlights: “CoFe{sub 2−x} Al{sub x}O{sub 4} ferrite nanoparticles: Static and dynamic properties” • Grain size reduction with Al{sup 3+} content. • Reduction in Ms, Hc, with increasing Al{sup 3+} content. • Increase in resonance frequency with applied field. • Decrease in resonance field with increase in Al{sup 3+} content. • Decrease in Gilbert parameter with increase in Al{sup 3+} content. - Abstract: Aluminum doped CoFe{sub 2−x}Al{sub x}O{sub 4} (0 ≤ x ≤ 0.9) nanoparticles were synthesized via auto-combustion. Formation of single phase cubic spinel structure was confirmed by X-ray diffraction (XRD) analysis. XRD analysis suggests a linear decrease in lattice cell parameters and grain size (90–55 nm) with the increase in Al{sup 3+} content. The saturation magnetization of samples decrease with increasing Al{sup 3+} content due to magnetic dilution effect. A concomitant linear reduction in coercivity was also observed mainly due to decrease in magnetic anisotropy. Frequency and field dependent dynamic properties of nanoparticles were studied by ferromagnetic resonance (FMR) technique. The resonance frequency increases linearly with magnetic field for all nanoparticles. Magnetic field dependent experimental absorption data (S{sub 21} vs. frequency) were compared with effective medium theory considering an effective demagnetization field and was observed to be in good agreement with each other. High Al{sup 3+} content reduces the Gilbert damping parameter thus making CoFe{sub 2−x}Al{sub x}O{sub 4} as an attractive material for high frequency applications.

36 MATERIALS SCIENCE↗

Enabling room temperature ferromagnetism in monolayer MoS2 via in situ iron-doping

Abstract Two-dimensional semiconductors, including transition metal dichalcogenides, are of interest in electronics and photonics but remain nonmagnetic in their intrinsic form. Previous efforts to form two-dimensional dilute magnetic semiconductors utilized extrinsic doping techniques or bulk crystal growth, detrimentally affecting uniformity, scalability, or Curie temperature. Here, we demonstrate an in situ substitutional doping of Fe atoms into MoS 2 monolayers in the chemical vapor deposition growth. The iron atoms substitute molybdenum sites in MoS 2 crystals, as confirmed by transmission electron microscopy and Raman signatures. We uncover an Fe-related spectral transition of Fe:MoS 2 monolayers that appears at 2.28 eV above the pristine bandgap and displays pronounced ferromagnetic hysteresis. The microscopic origin is further corroborated by density functional theory calculations of dipole-allowed transitions in Fe:MoS 2 . Using spatially integrating magnetization measurements and spatially resolving nitrogen-vacancy center magnetometry, we show that Fe:MoS 2 monolayers remain magnetized even at ambient conditions, manifesting ferromagnetism at room temperature.

36 MATERIALS SCIENCE↗

Neutron diffraction studies and magnetism in Ti doped SrFeO{sub 3−δ} systems

The magnetic ground state of single phase tetragonal crystal structure with I4/mmm space group SrFe{sub 1−x}Ti{sub x}O{sub 3−δ} (x = 0.2 and 0.3) is investigated from 2 K to 300 K. Strong irreversibility is observed in zero-field-cooled (ZFC) and field-cooled DC magnetization curves. Arrott plots show the absence of spontaneous magnetization (M{sub S}) down to 2 K, ruling out the possibility of long range ferromagnetic order. Neutron diffraction measurements carried out at H = 0, 7 T (field cooled) at several temperatures above and below the T* (temperature at which M{sub ZFC}(T) is maximum) do not show any additional peaks and also no difference in intensity rules out, both the long range antiferromagnetic and ferromagnetic orders. Hence, the combined study of dc magnetization and neutron diffraction results reveals cluster spin glass behavior in SrFe{sub 1−x}Ti{sub x}O{sub 3−δ} (x = 0.2 and 0.3)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Exchange‐Interaction‐Like Behavior in Ferroelectric Bilayers

Abstract Interlayer coupling in materials, such as exchange interactions at the interface between an antiferromagnet and a ferromagnet, can produce exotic phenomena not present in the parent materials. While such interfacial coupling in magnetic systems is widely studied, there is considerably less work on analogous electric counterparts (i.e., akin to electric “exchange‐bias‐like” or “exchange‐spring‐like” interactions between two polar materials) despite the likelihood that such effects can also engender new features associated with anisotropic electric dipole alignment. Here, electric analogs of such exchange interactions are reported, and their physical origins are explained for bilayers of in‐plane polarized Pb 1−x Sr x TiO 3 ferroelectrics. Variation of the strontium content and thickness of the layers provides for deterministic control over the switching properties of the bilayer system resulting in phenomena analogous to an exchange‐spring interaction and, leveraging added control of these interactions with an electric field, the ability to realize multistate‐memory function. Such observations not only hold technological promise for ferroelectrics and multiferroics but also extend the similarities between ferromagnetic and ferroelectric materials to include the manifestation of exchange‐interaction‐like phenomena.

Kavle, Pravin↗

Enlarged Mn 3s splitting and room-temperature ferromagnetism in epitaxially grown oxygen doped Mn{sub 2}N{sub 0.86} films

Single-phase and oxygen doped Mn{sub 2}N{sub 0.86} thin films have been grown on MgO (111) by plasma-assisted molecular beam epitaxy. The films grow under tensile strain and, remarkably, they show ferromagnetic-like interactions at low temperature and ferromagnetic ordering agreed well with the Bloch-law T{sup 3/2} at room-temperature. We further demonstrate the enlarged Mn 3s splitting (6.46 eV) and its possible relation to the observed ferromagnetism. Our study not only provide a strategy for further theoretical work on oxygen doped manganese nitrides, but also shed promising light on utilizing its room-temperature FM property to fabricate spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effects of Sn substitution in SrRuO 3 epitaxial films

Epitaxial SrRu 1–x Sn x O 3 (0 ≤ x ≤ 1) thin films were deposited on SrTiO 3 (001) substrates by sequential two-target synthesis using pulsed laser deposition to achieve stable phases in this family of quaternary perovskites. The SrRu 1–x Sn x O 3 films exhibit a good crystalline quality, a sharp interface between film and substrate, and an atomically smooth surface. A gradual expansion of the c-axis lattice parameter was observed with Sn doping serving as a means to tune chemical pressure and magnetism. With an increase in Sn doping, the resistivity of the film increased, and the ferromagnetism decreased. These results illustrate use of lattice engineering, e.g., tuning of c-axis lattice parameter with chemical doping, to control electronic and magnetic properties of epitaxial thin films for applications in oxide electronics.

36 MATERIALS SCIENCE↗

Weak Ferromagnetism in Altermagnets from Alternating 𝑔-Tensor Anisotropy

Altermagnets are magnetic materials with antiferromagnetic spin ordering but exhibit ferromagnetic properties. Understanding the microscopic origin of the latter is a central problem. Ferromagnetlike properties such as the anomalous Hall effect are linked with weak ferromagnetism, whose microscopic origin in altermagnets remains unclear however. We show theoretically that the alternating 𝑔-tensor anisotropy in altermagnets can induce weak orbital ferromagnetism even when the Dzyaloshinskii-Moriya interaction is forbidden. We demonstrate this mechanism to explain weak ferromagnetism for both collinear and noncollinear spin altermagnets. Our findings provide new insights into the origin of weak ferromagnetism and suggest orbital-based ways for manipulating magnetic configurations in altermagnets.

Altermagnetism↗

2024 roadmap on 2D topological insulators

Abstract 2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin–momentum locked metallic edge states—both helical and chiral—surrounding an electrically insulating bulk. Forty years since the first discoveries of topological phases in condensed matter, the abstract concept of band topology has sprung into realization with several materials now available in which sizable bulk energy gaps—up to a few hundred meV—promise to enable topology for applications even at room-temperature. Further, the possibility of combining 2D TIs in heterostructures with functional materials such as multiferroics, ferromagnets, and superconductors, vastly extends the range of applicability beyond their intrinsic properties. While 2D TIs remain a unique testbed for questions of fundamental condensed matter physics, proposals seek to control the topologically protected bulk or boundary states electrically, or even induce topological phase transitions to engender switching functionality. Induction of superconducting pairing in 2D TIs strives to realize non-Abelian quasiparticles, promising avenues towards fault-tolerant topological quantum computing. This roadmap aims to present a status update of the field, reviewing recent advances and remaining challenges in theoretical understanding, materials synthesis, physical characterization and, ultimately, device perspectives.

Weber, Bent (ORCID:000000018586127X)↗

Energetics and magnetism of Co-doped GaN(0001) surfaces: A first-principles study

A comprehensive first-principles study of the energetics, electronic, and magnetic properties of Co-doped GaN(0001) thin films are presented and the effect of surface structure on the magnetic coupling between Co atoms is demonstrated. It is found that Co atoms prefer to substitute the surface Ga sites in different growth conditions. In particular, a CoN/GaN interface structure with Co atoms replacing the first Ga layer is preferred under N-rich and moderately Ga-rich conditions, while CoGa{sub x}/GaN interface is found to be energetically stable under extremely Ga-rich conditions. It is worth noted that the antiferromagnetic coupling between Co atoms is favorable in clean GaN(0001) surface, but the existence of ferromagnetism would be expected to occur as Co concentration increased in Ga-bilayer GaN(0001) surface. Our study provides the theoretical understanding for experimental research on Co-doped GaN films and might promise the Co:GaN system potential applications in spin injection devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Room-temperature in-plane ferromagnetism in Co-substituted Fe 5 GeTe 2 investigated by magnetic x-ray spectroscopy and microscopy

The exploration of two-dimensional (2D) van der Waals ferromagnets has revealed intriguing magnetic properties with significant potential for spintronics applications. In this study, we examine the magnetic properties of Co-doped Fe 5 GeTe 2 using x-ray photoemission electron microscopy (XPEEM) and x-ray magnetic circular dichroism (XMCD), complemented by density functional theory calculations. Our XPEEM measurements reveal that the Curie temperature (T c ) of a bilayer of (Co x Fe 1-x ) 5-δ GeTe 2 (with x = 0.28) reaches ∼300 K—a notable enhancement over most 2D ferromagnets in the ultrathin limit. Interestingly, the T c shows only a small dependence on film thickness (bulk T c ≈ 340 K), in line with the observed in-plane (IP) magnetic anisotropy and robust IP exchange coupling. XMCD measurements indicate that the spin moments for both Fe and Co are significantly reduced compared to the theoretical values. These insights highlight the potential of Co-doped Fe 5 GeTe 2 for stable, high-temperature ferromagnetic applications in 2D materials.

(Co0.28Fe0.72)5GeTe2↗

Heterobilayer moiré magnets: Moiré skyrmions and commensurate-incommensurate transitions

In this work, we study untwisted heterobilayers of ferromagnetic and antiferromagnetic van der Waals materials, with in particular a Dzyaloshinskii-Moriya interaction in the ferromagnetic layer. A continuum low-energy field theory is utilized to study such systems. We develop a phase diagram as a function of the strength of interlayer exchange and Dzyaloshinskii-Moriya interactions, combining perturbative and strong coupling analyses with numerical simulations using Landau-Lifshitz-Gilbert equations. Various moiré-periodic commensurate phases are found, and the commensurate-incommensurate transition is discussed. Among the commensurate phases, we observe an interesting skyrmion lattice phase wherein each moiré unit-cell hosts one skyrmion.

2-dimensional systems↗