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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Influence of calcium ion in concrete pore solution on the passivation of galvanized steel bars

The addition of supplementary cementitious materials may affect the Ca{sup 2+} concentration and pH value of the concrete pore solutions. This work studied the influence of the calcium ion on the passivation of the galvanized steel bars in simulated concrete pore solutions with relatively low pH value of 12.5 and 13.15. The results showed that continuous protective layers were formed on the galvanized coating in the solutions with saturated Ca(OH){sub 2} at pH 12.5 and solutions with either KOH or NaOH at pH 13.15. The passive film formed in the saturated Ca(OH){sub 2} solution showed better protective properties than those in other solutions. In the solutions with lower concentrations of Ca{sup 2+} at pH 12.5, there was no obvious reaction and no protective layer was formed on the surface.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Passive cooling designs to improve heat resilience of homes in underserved and vulnerable communities

Disadvantaged communities face a growing threat to staying safe during heat waves, especially during coincident power outages. This study develops a methodology to evaluate the effectiveness of passive cooling measures (those that operate without power) to improve residential building heat resilience. Building performance is simulated for representative homes and on district scales in two disadvantaged communities in Fresno, California. Eleven passive measures are evaluated using four heat resilience metrics with and without grid power. Results show performance of the mitigation measures varies by building characteristics, surrounding environment, and power scenario. The two most effective measures were installing solar-control window films and adding roof insulation. For pre-1978 single-family homes, these two measures can reduce unmet degree-hours (UDH) indoors by 12% and 11% respectively without grid power, or 28% and 37% with grid power. Their respective UDH reductions at district scale typically range 8% — 20% and 4% — 12% without grid power, or 14% — 44% and 8% — 51% with grid power. Top floors have higher overheating risk than lower floors during extreme heat events with coincident power outages. Natural ventilation can help, reducing UDH by 21% — 26%. The methodology and findings from this study can help cities, communities, and utilities develop effective and targeted strategies to promote greater residential heat resilience.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2020

The passivity of low-temperature carburized austenitic stainless steel AISI-316L in a simulated boiling-water-reactor environment

The passive film on low-temperature-carburized AISI-316L austenitic stainless steel was studied in an oxygenated, simulated boiling-water-reactor environment with normal water chemistry. The microstructure was studied using scanning electron microscopy, grazing-incidence X-ray diffractometry, Auger electron spectroscopy, X-ray energy-dispersive spectroscopy, and transmission electron microscopy. For non-surface engineered AISI-316L, three distinct layers were observed after exposure: an outer layer of larger nickel-oxide enriched particles with the spinel structure, an intermediate layer of small Cr-oxide-enriched hematite particles, and a compact inner layer of Cr-enriched oxide also having the spinel structure. Exposure of low-temperature-carburized AISI-316L, in contrast, resulted in only two distinct layers. These layers did not include a compact Cr-rich inner layer. Instead, the innermost layer consisted of an oxide with the spinel structure that was a mixture of Fe, Cr and Ni oxide. The outer layer on the low-temperature-carburized specimen consisted of large loosely stacked particles with the spinel structure of mixed composition. In addition to passive-film characterization, the corrosion rate was studied by monitoring mass loss. Finally, after 500 h of immersion, the mass changes measured were relatively low for all specimens indicating good adhesion and low oxidation rates.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Oxide structure of air-passivated U-6Nb alloy thin films

U-6Nb is a uranium alloy containing 6 wt% niobium that possesses high corrosion resistance. The structure and composition of the passivating oxide layer formed on air-aged U-6Nb, which gives the material its corrosion resistant properties, was characterized using surface scattering techniques. Stable oxide layers formed on the surface of a set of U-6Nb alloy thin films under ambient conditions were investigated using neutron reflectometry (NR), x-ray reflectometry (XRR) and grazing incidence x-ray diffraction (GIXD). The passivating oxide was composed of approximately 27% U, 5% Nb, and 68% O, primarily consisting of a thin niobium oxide layer (5.5 ± 0.4 nm) separating a thicker UO2 layer (27.1 ± 2.3 nm) from the underlying U-6Nb alloy. A critical density of enriched niobium oxide at the metal-oxide interface is hypothesized to limit oxygen diffusion and confer high corrosion resistance to the alloy.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Elucidating mechanisms of oxide growth and surface passivation on zinc thin film electrodes in alkaline solutions using the electrochemical quartz crystal microbalance

For this study, we utilized electrochemical quartz crystal microbalance to understand electrochemical passivation of the zinc electrode in alkaline media and subsequent oxide growth and stripping. The formation of native zinc oxide on a near pristine Zn surface upon contact with 1 M KOH electrolyte was observed. The surface was seen to roughen with time. During Zn dissolution, the measured mass-charge ratio corresponded to the removal of ZnO and not merely Zn. The mechanism of passivation was determined to be caused by electrochemical etching to form pores. The etching leads to a build-up of solid ZnO and Zn(OH) 2 due to electrochemical reactions on the surfaces of the pores. These reactions functionally close the pores off from the bulk. The cycle of Zn deposition and dissolution develops a porous network, which may be the origin of mossy Zn deposits that plague reversible Zn metal batteries.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Near-field passive sensor for the monitoring of high-temperature oxidative corrosion of metals

This study reports on the development and testing of a passive wireless device designed to track temperature and corrosion behavior in SS304H stainless steel under elevated temperatures. The ANSYS HFSS software was utilized to model and optimize the design of an inductor-capacitor (LC) resonator passive wireless sensors fabricated using platinum designs printed onto an aluminum oxide support operating at frequencies between (50–190 MHz). The optimal LC wireless sensor designs were then fabricated using screen-printing and sintering methods. Here, the sensors were tested by placing the sensor onto polished SS304H flat substrates and heated to 900–1050 °C in air. Wireless acquisition of sensor data during heating, cooling, and isothermal stages was achieved through a Pt loop antenna connected to an RF signal generator and a network analyzer.

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2016

Effects of the quadrupole wakefields in a passive streaker

A novel method based on transverse wakefields has been recently proposed to characterize the temporal profile of a relativistic electron bunch. The electron bunch is streaked by the interaction with the transverse wakefield excited when the electrons travel off-axis in a device called the passive streaker. Furthermore, for the large transverse off-axis offsets required to effectively streak the electron bunch, higher order modes can be excited. The time-dependent quadrupole wakefield of the dielectric-lined structure can cause a significant enlargement of the transverse profile at the screen. Consequently, the measurement resolution is decreased also at the bunch tail. We report on how the temporal profile can be effectively reconstructed also including the defocusing effect for a given transverse beam distribution at the passive streaker.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Method for analyzing passive silicon carbide thermometry with a continuous dilatometer to determine irradiation temperature

Silicon carbide is used as a passive post-irradiation temperature monitor because the irradiation defects will anneal out above the irradiation temperature. The irradiation temperature is determined by measuring a property change after isochronal annealing, i.e., lattice spacing, dimensions, electrical resistivity, thermal diffusivity, or bulk density. However, such methods are time-consuming since the steps involved must be performed in a serial manner. This work presents the use of thermal expansion from continuous dilatometry to calculate the SiC irradiation temperature, which is an automated process requiring minimal setup time. Analysis software was written that performs the calculations to obtain the irradiation temperature and removes possible user-introduced error while standardizing the analysis. In addition, this method has been compared to an electrical resistivity and isochronal annealing investigation, and the results revealed agreement of the calculated temperatures. These results show that dilatometry is a reliable and less time-intensive process for determining irradiation temperature from passive SiC thermometry.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

Carrier transport through the ultrathin silicon-oxide layer in tunnel oxide passivated contact (TOPCon) c-Si solar cells

The carrier transport through the silicon-oxide (SiO x ) layer in tunnel oxide passivated contact (TOPCon) c-Si solar cells has been studied experimentally and by simulation. The current intensity versus voltage (J-V) characteristics of GaIn/n-c-Si/SiO x /n + -poly-Si/Al structures shows a linear Ohmic characteristic, while a non-Ohmic behavior is observed in the samples without the n + -poly-Si contact layer. Conductive Atomic Force Microscopy (c-AFM) images reveal some current spikes on the surface of the samples, which could be related to the transport through pinholes. The simulation results show that 1) a rectification characteristic is obtained when only the tunneling mechanism is included, 2) both the reverse saturation current and the forward current increase when a small amount of transport through pinholes is introduced, and 3) finally a linear Ohmic behavior is observed when the pinhole transport component reaches a certain level. Furthermore, the simulation for whole TOPCon solar cells provides some useful results. For very thin SiO x (< 1.2 nm), the tunneling provides sufficient high tunneling probability and high efficiency TOPCon solar cells can be obtained without transport through pinholes if the passivation is ensured; while for a relatively thick SiO x (> 1.2 nm) without the transport through pinholes, the TOPCon solar cell shows a poor fill factor (FF) with a high series resistance (Rs) because the tunneling does not provide a sufficient high transport channel for carrier transport, and the introduction of a small number of transports through pinholes improves the FF and reduces the Rs, hence improves the PCE. However, a high possibility for carrier going through pinholes reduces all of the performance parameters and degrades PCE for all the cases simulated. Therefore, an optimized pinhole density and size distribution is critical engineering for solar cell performance optimization. However, the establishment of an optimized method to precisely control the pinhole formation and characterization is still on the way.

14 SOLAR ENERGY↗
DOE OSTI2020

Sputtered indium tin oxide as a recombination layer formed on the tunnel oxide/poly-Si passivating contact enabling the potential of efficient monolithic perovskite/Si tandem solar cells

We focus on utilizing sputtered indium tin oxide (ITO) as a recombination layer, having low junction damage to an n-type silicon solar cell with a front-side tunnel oxide passivating electron contact, thereby enabling the development of a high efficiency monolithic perovskite/Si tandem device. High transparency and low resistivity ITO films are deposited via low power DC magnetron sputtering at room temperature onto a front-side thin SiO x /n + poly-Si contact in a complete Cz n-Si cell with a back-side Al 2 O 3 /SiN x passivating boron-diffused p + -emitter on a random pyramid textured surface. We report the cell characteristics before and after ITO sputtering, and we find a cure at 250 °C in air is highly effective at mitigating any sputtering induced damage. Our ITO coated sample resulted in an implied open-circuit voltage (iV oc ) of 684.7 ± 11.3 mV with the total saturation current density of 49.2 ± 14.8 fA/cm 2 , an implied fill factor (iFF) of 81.9 ± 0.8%, and a contact resistivity in the range of 60 mΩ-cm 2 to 90 mΩ-cm 2 . After formation of a local Ag contact to the rear emitter and sputtered ITO film as the front-side contact without grid fingers, the pseudo-efficiency of 20.2 ± 0.5% was obtained with the V oc of 670.4 ± 7 mV and pseudo FF of 77.3 ± 1.3% under simulated one sun with the calculated short-circuit current density of 30.9 mA/cm 2 from the measured external quantum efficiency. Furthermore, our modelling result shows that efficiency exceeding 25% under one sun is practically achievable in perovskite/Si tandem configuration using the ITO recombination layer connecting a perovskite top cell and a poly-Si bottom cell.

14 SOLAR ENERGY↗
DOE OSTI2020

Sub-micrometer random-pyramid texturing of silicon solar wafers with excellent surface passivation and low reflectance

Select emerging solar cell technologies, ranging from very narrow screen-printed fingers to perovskite/silicon tandems, would benefit from a reduction of the height of the standard pyramidal texture of monocrystalline silicon wafers to below 1 μm. However, fabricating such small surface features usually compromises the requisite low reflectance and high passivation quality. Through systematic design of experiments, we demonstrate that conventional alkaline-based wet-chemical etching processes can be tuned to produce dense, spatially homogeneous, and uniformly sized sub-micrometer pyramids. Precise texture size can be further controlled by adding potassium silicate to the texturing solution to effectively slow the pyramid growth rate and promote nucleation. With pyramid size distribution data—extracted from multiple atomic force microscopy images across each wafer—we demonstrate 16 nanotextures with average pyramid sizes ranging from 62 to 512 nm, with the largest having only 0.3% of its pyramids taller than 1 μm. Six of the nanotextures exhibit light trapping and surface defect densities comparable to state-of-the-art microtextured wafers. In conclusion, the best nanotexture achieved an AM1.5G-weighted reflectance of 11.8% and a minority-carrier lifetime of 3.4 ms after passivation with amorphous silicon, demonstrating that smaller textures need not deteriorate solar cell performance.

14 SOLAR ENERGY↗
DOE OSTI2021

Robust passivation of CdSeTe based solar cells using reactively sputtered magnesium zinc oxide

Magnesium zinc oxide (MZO, Mg x Zn 1-x O) is a leading emitter for CdTe-based solar cells due to its transparency and the ability to tune its conduction band offset with the absorber. Devices employing alloyed cadmium selenide telluride (CST, CdSe y Te 1-y ) absorbers achieved high efficiency (>19%) using MZO deposited by reactive sputtering over a broad composition range (3.68–3.92 eV, x: 0.20–0.35). Minimal differences in implied and measured open circuit voltage indicate that the contacts are well passivated and highly selective across the spectrum of MZO employed. Device performance insensitivity to MZO composition, which is not observed in CdTe devices, is attributed to the formation of an oxygenated interface layer. Se volatility creates a group VI deficiency at the interface that drives O migration from the MZO into the absorber. This introduces conductivity in the emitter not present in its as-deposited state, contributing to the exceptional performance observed. It is shown that the quality of device passivation depends on the oxidation state of the as-deposited MZO such that intelligent control and management of the reactive sputtering process is required.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Measurement of Poly-Si Film Thickness on Textured Surfaces by X-Ray Diffraction in Poly-Si/SiOx Passivating Contacts for Monocrystalline Si Solar Cells

Polycrystalline Silicon on tunneling silicon oxide (poly-Si/SiOx) passivating contacts have shown great potential for the next-generation monocrystalline Si (c-Si) industrial photovoltaic technology. However, these cells typically suffer from strong parasitic absorption in the thick front poly-Si layer, which is designed to reduce metal-induced recombination. In previous work, we demonstrated an improved short-circuit current density, Jsc, by thinning the front poly-Si film in an SF6 plasma using the front metal grids as a self-aligned mask, but the sub - 100 nm thick poly-Si film is difficult to measure on an alkaline textured surface. Conventional optical techniques such as spectroscopic ellipsometry cannot be used due to the high scattering nature of the random pyramids. At poly-Si thicknesses below 50 nm, secondary electron microscopy (SEM) has difficulty distinguishing the poly-Si from the underlying c-Si substrate. Here, we demonstrate X-ray diffraction as an effective method to quantitatively measure the front poly-Si thickness. The thickness calculated from the diffraction peak height of the Si(111) crystallographic plane agrees well with the cross-section SEM analysis and simulations using SunSolve. We show that by thinning the front poly-Si from 200 to 60 nm, Jsc increased by 2.4 mA/cm2, while maintaining the same Voc. This led to an absolute efficiency gain of 1.73%. In addition, we also discuss possible reasons for the premature loss of passivation before the removal of all poly-Si, which prevented an even higher gain in Jsc.

light/electron beam induced current↗
DOE OSTI2023

High-voltage monocrystalline Si photovoltaic minimodules based on poly -Si/SiO x passivating contacts for high-power laser power conversion

By using photovoltaic cells under high-intensity laser illumination, much higher photoconversion efficiencies are obtained than under the solar spectrum. Here we demonstrate a monocrystalline Si based minimodule to convert laser light into electricity using edge-illuminated Si "minicells" based on polysilicon on silicon oxide passivating contacts. Ten fully metallized devices were stacked in series and illuminated from the edge, creating a high-voltage, low-current minimodule that mitigates resistive and Auger-Meitner losses. The minimodule shows a high open-circuit voltage of >5 V when tested under 1-Sun illumination and >7 V at higher illumination intensities when tested with a flash simulator. The fill factor in these minimodules is limited by shunting at low illuminations but reaches a maximum of ~78% for higher illumination intensities >40 Suns (current density >1200 mA/cm 2 ), indicating that the minimodules are not limited by series resistance up to 40 Suns. Under 1000 nm monochromatic light, we measure efficiencies >40% at > 40 Suns equivalent illumination, showing the potential of passivated contact Si cells for laser power conversion.

14 SOLAR ENERGY↗
DOE OSTI2015

The role of surface passivation in controlling Ge nanowire faceting

In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. Furthermore, these results illustrate the essential roles of the precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, <111>-oriented nanowires.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Sub-Bandgap Luminescence from Doped Polycrystalline and Amorphous Silicon Films and Its Application to Understanding Passivating-Contact Solar Cells

We report luminescence phenomena from doped polycrystalline silicon (poly-Si) films and their applications to study carrier transport properties in passivating-contact solar cells. Low-temperature luminescence spectra emitted from doped poly-Si layers are found to be very broad and stretched from the crystalline silicon (c-Si) luminescence peak to significantly lower energies. This suggests that these layers contain radiative defect levels whose energies are continuously distributed from the band edges to deep levels in the poly-Si bandgap. Moreover, photoinduced carriers inside poly-Si layers are found to be completely blocked by an ultrathin SiOx interlayer (~1.3 nm). This demonstrates that there is no free-carrier coupling from poly-Si layers in practical passivating-contact solar cells. Finally, we demonstrate that the same principle can be applied to study carrier transport properties in hydrogenated amorphous silicon films.

14 SOLAR ENERGY↗
DOE OSTI2019

Hydrogen-Assisted Defect Engineering of Doped Poly-Si Films for Passivating Contact Solar Cells

Hydrogen-assisted defect engineering, via a hydrogenated silicon nitride (SiN x :H) capping layer, on doped polycrystalline silicon (poly-Si) passivating-contact structures, is explored using complementary techniques. The hydrogen treatment universally improves the passivation quality of poly-Si/SiO x stacks on all samples investigated. Meanwhile, their contact resistivity remains very low at ~6 m$\Omega$cm 2 . Moreover, the nature of charge carrier recombination within the poly-Si films is also investigated by means of photoluminescence. On planar c-Si substrates, the poly-Si films emit two broad photoluminescence peaks ~850-1050 nm and ~1300-1500 nm. The former is the characteristic peak of the hydrogenated amorphous Si (a-Si:H) phase and only appears after the treatment, demonstrating that i) a significant amount of hydrogen has been driven into the poly-Si film and ii) an amorphous phase is present within it. The second peak originates from sub-bandgap radiative defects inside the poly-Si films and increases after the treatment, suggesting a suppression of their non-radiative recombination channels. For films deposited on textured c-Si substrates, there is a disrupted oxide boundary, preventing a build-up of excess carriers inside the films and leading to quenching of the film luminescence.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Effect of Passivating Shells on the Chemistry and Electrode Properties of LiMn 2 O 4 Nanocrystal Heterostructures

Building a stable chemical environment at the cathode/electrolyte interface is directly linked to the durability of Li-ion batteries with high energy density. Recently, colloidal chemistry methods have enabled the design of core–shell nanocrystals of Li 1+x Mn 2–x O 4 , an important battery cathode, with passivating shells rich in Al 3+ through a colloidal synthetic route. These heterostructures combine the presence of redox-inactive ions on the surface to minimize undesired reactions, with the coverage of each individual particle in an epitaxial manner. Although they improve electrode performance, the exact chemistry and structure of the shell as well as the precise effect of the ratio between the shell and the active core remain to be elucidated. Correlation of these parameters to electrode properties would serve to tailor the heterostructure design toward complete shutdown of undesired reactions. These knowledge gaps are the target here. Li 1+x Mn 2–x O 4 nanocrystals with Al 3+ -rich shells of different thicknesses were synthesized. Multimodal characterization comprehensively revealed the elemental distribution, electronic state, and crystallinity in the heterostructures, which confirmed the potential of this approach to finely tune passivating layers. All of the modified nanocrystals improved the capacity retention while retaining charge storage compared to the bare counterpart, even under harsh conditions.

25 ENERGY STORAGE↗