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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane

Tunable spin transport in nanodevices is highly desirable to spintronics. Here, we predict existence of quantum spin Hall effects and tunable spin transport in As-graphane, based on first-principle density functional theory and tight binding calculations. Monolayer As-graphane is constituted by using As adsorbing on graphane with honeycomb H vacancies. Owing to the surface strain, monolayer As-graphane nanoribbons will self-bend toward the graphane side. The naturally curved As-graphane nanoribbons then exhibit unique spin transport properties, distinctively different from the flat ones, which is a two-dimensional topological insulator. Under external stress, one can realize tunable spin transport in curved As-graphane nanoribon arrays. Such intriguing mechanical bending induced spin flips can offer promising applications in the future nanospintronics devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Width-Tuned Magnetic Order Oscillation on Zigzag Edges of Honeycomb Nanoribbons

Quantum confinement and interference often generate exotic properties in nanostructures. One recent highlight is the experimental indication of a magnetic phase transition in zigzag-edged graphene nanoribbons at the critical ribbon width of about 7 nm [Magda, G. Z. et al. Nature 2014, 514, 608]. Here in this work, we show theoretically that with further increase in the ribbon width, the magnetic correlation of the two edges can exhibit an intriguing oscillatory behavior between antiferromagnetic and ferromagnetic, driven by acquiring the positive coherence between the two edges to lower the free energy. The oscillation effect is readily tunable in applied magnetic fields. In conclusion, these novel properties suggest new experimental manifestation of the edge magnetic orders in graphene nanoribbons and enhance the hopes of graphene-like spintronic nanodevices functioning at room temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Ultralow Damping in Nanometer-Thick Epitaxial Spinel Ferrite Thin Films

Pure spin currents, unaccompanied by dissipative charge flow, are essential for realizing energy-efficient nanomagnetic information and communications devices. Thin-film magnetic insulators have been identified as promising materials for spin-current technology because they are thought to exhibit lower damping compared with their metallic counterparts. However, insulating behavior is not a sufficient requirement for low damping, as evidenced by the very limited options for low-damping insulators. Here, we demonstrate a new class of nanometer-thick ultralow-damping insulating thin films based on design criteria that minimize orbital angular momentum and structural disorder. Specifically, we show ultralow damping in <20 nm thick spinel-structure magnesium aluminum ferrite (MAFO), in which magnetization arises from Fe 3+ ions with zero orbital angular momentum. Here, these epitaxial MAFO thin films exhibit a Gilbert damping parameter of ~0.0015 and negligible inhomogeneous linewidth broadening, resulting in narrow half width at half-maximum linewidths of ~0.6 mT around 10 GHz. Our findings offer an attractive thin-film platform for enabling integrated insulating spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Tuning Magnetic Soliton Phase via Dimensional Confinement in Exfoliated 2D Cr 1/3 NbS 2 Thin Flakes

Thin flakes of Cr 1/3 NbS 2 are fabricated successfully via microexfoliation techniques. Temperature-dependent and field-dependent magnetizations of thin flakes with various thicknesses are investigated. When the thickness of the flake is around several hundred nanometers, the softening and eventual disappearance of the bulk soliton peak is accompanied by the appearance of other magnetic peaks at lower magnetic fields. The emergence and annihilation of the soliton peaks are explained and simulated theoretically by the change in spin spiral number inside the soliton lattice due to dimensional confinement. Compared to the conventional magnetic states in nanoscale materials, the stability and thickness tunability of quantified spin spirals make Cr 1/3 NbS 2 a potential candidate for spintronics nanodevices beyond Moore’s law.

2D materials↗
DOE OSTI2018

Creation of Magnetic Skyrmion Bubble Lattices by Ultrafast Laser in Ultrathin Films

Magnetic skyrmions are topologically nontrivial spin textures which hold great promise as stable information carriers in spintronic devices at the nanoscale. One of the major challenges for developing novel skyrmion-based memory and logic devices is fast and controlled creation of magnetic skyrmions at ambient conditions. Here we demonstrate controlled generation of skyrmion bubbles and skyrmion bubble lattices from a ferromagnetic state in sputtered ultrathin magnetic films at room temperature by a single ultrafast (35 fs) laser pulse. The skyrmion bubble density increases with the laser fluence, and it finally becomes saturated, forming disordered hexagonal lattices. Moreover, we present that the skyrmion bubble lattice configuration leads to enhanced topological stability as compared to isolated skyrmions, suggesting its promising use in data storage. Our findings shed light on the optical approach to the skyrmion bubble lattice in commonly accessible materials, paving the road toward the emerging skyrmion-based memory and synaptic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction

Atomically thin chromium triiodide (CrI 3 ) has recently been identified as a layered antiferromagnetic insulator, in which adjacent ferromagnetic monolayers are antiferromagnetically coupled. This unusual magnetic structure naturally comprises a series of antialigned spin filters, which can be utilized to make spin-filter magnetic tunnel junctions with very large tunneling magnetoresistance (TMR). Here we report voltage control of TMR formed by four-layer CrI 3 sandwiched by monolayer graphene contacts in a dual-gated structure. By varying the gate voltages at fixed magnetic field, the device can be switched reversibly between bistable magnetic states with the same net magnetization but drastically different resistance (by a factor of 10 or more). Also, without switching the state, the TMR can be continuously modulated between 17,000% and 57,000%, due to the combination of spin-dependent tunnel barrier with changing carrier distributions in the graphene contacts. Our work shows new kinds of magnetically moderated transistor action and opens up possibilities for voltage-controlled van der Waals spintronic devices.

2D magnets↗
DOE OSTI2019

Atomic-Scale Control of Magnetism at the Titanite-Manganite Interfaces

Complex oxide thin-film heterostructures often exhibit magnetic properties different from those known for bulk constituents. This is due to the altered local structural and electronic environment at the interfaces, which affects the exchange coupling and magnetic ordering. The emergent magnetism at oxide interfaces can be controlled by ferroelectric polarization and has a strong effect on spin-dependent transport properties of oxide heterostructures, including magnetic and ferroelectric tunnel junctions. In this work, using prototype La 2/3 Sr 1/3 MnO 3 /BaTiO 3 heterostructures, we show that ferroelectric polarization of BaTiO 3 controls the orbital hybridization and magnetism at heterointerfaces. We observe changes in the enhanced orbital occupancy and significant charge redistribution across the heterointerfaces, affecting the spin and orbital magnetic moments of the interfacial Mn and Ti atoms. Notably, we find that the exchange coupling between Mn and Ti atoms across the interface is tuned by ferroelectric polarization from ferromagnetic to antiferromagnetic. Our findings provide a viable route to electrically control complex magnetic configurations at artificial multiferroic interfaces, taking a step toward low-power spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Atomically Thin CrCl 3 : An In-Plane Layered Antiferromagnetic Insulator

The recent discovery of magnetism in atomically thin layers of van der Waals (vdW) crystals has created new opportunities for exploring magnetic phenomena in the two-dimensional (2D) limit. In most 2D magnets studied to date, the c-axis is an easy axis, so that at zero applied field the polarization of each layer is perpendicular to the plane. In this work, we demonstrate that atomically thin CrCl 3 is a layered antiferromagnetic insulator with an easy-plane normal to the c-axis, that is, the polarization is in the plane of each layer and has no preferred direction within it. Ligand-field photoluminescence at 870 nm is observed down to the monolayer limit, demonstrating its insulating properties. We investigate the in-plane magnetic order using tunneling magnetoresistance in graphene/CrCl 3 /graphene tunnel junctions, establishing that the interlayer coupling is antiferromagnetic down to the bilayer. From the temperature dependence of the magnetoresistance, we obtain an effective magnetic phase diagram for the bilayer. Our findings suggest that CrCl 3 should be useful for studying the physics of 2D phase transitions and for making new kinds of vdW spintronic devices.

2D magnetic insulator↗
DOE OSTI2019

Controlling the Magnetic Anisotropy of the van der Waals Ferromagnet Fe 3 GeTe 2 through Hole Doping

Identifying material parameters affecting properties of ferromagnets is key to optimized materials that are better suited for spintronics. Magnetic anisotropy is of particular importance in van der Waals magnets, since it not only influences magnetic and spin transport properties, but also is essential to stabilizing magnetic order in the two-dimensional limit. Here, we report that hole doping effectively modulates the magnetic anisotropy of a van der Waals ferromagnet and explore the physical origin of this effect. We report Fe 3–x GeTe 2 nanoflakes show a significant suppression of the magnetic anisotropy with hole doping. Electronic structure measurements and calculations reveal that the chemical potential shift associated with hole doping is responsible for the reduced magnetic anisotropy by decreasing the energy gain from the spin–orbit induced band splitting. Our findings provide an understanding of the intricate connection between electronic structures and magnetic properties in two-dimensional magnets and propose a method to engineer magnetic properties through doping.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Characterization of Shallow, Undoped Ge/SiGe Quantum Wells Commercially Grown on 8-in. (100) Si Wafers

Hole spins in Ge quantum wells have shown success in both spintronic and quantum applications, thereby increasing the demand for high-quality material. We performed material analysis and device characterization of commercially grown shallow and undoped Ge/SiGe quantum well heterostructures on 8-in. (100) Si wafers. Material analysis reveals the high crystalline quality, sharp interfaces, and uniformity of the material. We demonstrate a high mobility (1.7 × 10 5 cm 2 V –1 s –1 ) 2D hole gas in a device with a conduction threshold density of 9.2 × 10 10 cm –2 . We study the use of surface preparation as a tool to control barrier thickness, density, mobility, and interface trap density. We report interface trap densities of 6 × 10 12 eV –1 . Our results validate the material’s high quality and show that further investigation into improving device performance is needed. We conclude that surface preparations which include weak Ge etchants, such as dilute H 2 O 2 , can be used for postgrowth control of quantum well depth in Ge-rich SiGe while still providing a relatively smooth oxide–semiconductor interface. Our results show that interface state density is mostly independent of our surface preparations, thereby implying that a Si cap layer is not necessary for device performance. Transport in our devices is instead limited by the quantum well depth. Commercially sourced Ge/SiGe, such as studied here, will provide accessibility for future investigations.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Magnetic Texture in Insulating Single Crystal High Entropy Oxide Spinel Films

Magnetic insulators are important materials for a range of next-generation memory and spintronic applications. Structural constraints in this class of devices generally require a clean heterointerface that allows effective magnetic coupling between the insulating layer and the conducting layer. However, there are relatively few examples of magnetic insulators that can be synthesized with surface qualities that would allow these smooth interfaces and precisely tuned interfacial magnetic exchange coupling, which might be applicable at room temperature. In this work, we demonstrate an example of how the configurational complexity in the magnetic insulator layer can be used to realize these properties. The entropy-assisted synthesis is used to create single-crystal (Mg 0.2 Ni 0.2 Fe 0.2 Co 0.2 Cu 0.2 )Fe 2 O 4 films on substrates spanning a range of strain states. These films show smooth surfaces, high resistivity, and strong magnetic responses at room temperature. Furthermore, local and global magnetic measurements further demonstrate how strain can be used to manipulate the magnetic texture and anisotropy. These findings provide insight into how precise magnetic responses can be designed using compositionally complex materials that may find application in next-generation magnetic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Ferroelectric Self-Polarization Controlled Magnetic Stratification and Magnetic Coupling in Ultrathin La 0.67 Sr 0.33 MnO 3 Films

Multiferroic oxide heterostructures consisting of ferromagnetic and ferroelectric components hold the promise for nonvolatile magnetic control via ferroelectric polarization, advantageous for the low-dissipation spintronics. Modern understanding of the magnetoelectric coupling in these systems involves structural, orbital, and magnetic reconstructions at interfaces. Previous works have long proposed polarization-dependent interfacial magnetic structures; however, direct evidence is still missing, which requires advanced characterization tools with near-atomic-scale spatial resolutions. Here, extensive polarized neutron reflectometry (PNR) studies have determined the magnetic depth profiles of PbZr 0.2 Ti 0.8 O 3 /La 0.67 Sr 0.33 MnO 3 (PZT/LSMO) bilayers with opposite self-polarizations. When the LSMO is 2–3 nm thick, the bilayers show two magnetic transitions on cooling. However, temperature-dependent magnetization is different below the lower-temperature transition for opposite polarizations. PNR finds that the LSMO splits into two magnetic sublayers, but the inter-sublayer magnetic couplings are of opposite signs for the two polarizations. Near-edge X-ray absorption spectroscopy further shows contrasts in both the Mn valences and the Mn–O bond anisotropy between the two polarizations. Finally, this work completes the puzzle for the magnetoelectric coupling model at the PZT/LSMO interface, showing a synergic interplay among multiple degrees of freedom toward emergent functionalities at complex oxide interfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Tuning In-Plane Magnetic Anisotropy and Interfacial Exchange Coupling in Epitaxial La 2/3 Sr 1/3 CoO 3 /La 2/3 Sr 1/3 MnO 3 Heterostructures

Controlling the in-plane magnetocrystalline anisotropy and interfacial exchange coupling between ferromagnetic (FM) layers plays a key role in next-generation spintronic and magnetic memory devices. In this work, we explored the effect of tuning the magnetocrystalline anisotropy of La 2/3 Sr 1/3 CoO 3 (LSCO) and La 2/3 Sr 1/3 MnO 3 (LSMO) layers and the corresponding effect on interfacial exchange coupling by adjusting the thickness of the LSCO layer (t LSCO ). The epitaxial LSCO/LSMO bilayers were grown on (110) o -oriented NdGaO 3 (NGO) substrates with a fixed LSMO (top layer) thickness of 6 nm and LSCO (bottom layer) thicknesses varying from 1 to 10 nm. Despite the small difference (~0.2%) in lattice mismatch between the two in-plane directions, [001] o and [11̅0] o , a pronounced in-plane magnetic anisotropy was observed. Soft X-ray magnetic circular dichroism hysteresis loops revealed that for t LSCO ≤ 4 nm, the easy axes for both LSCO and LSMO layers were along the [001] o direction, and the LSCO layer was characterized by magnetically active Co 2+ ions that strongly coupled to the LSMO layer. No exchange bias effect was observed in the hysteresis loops. In contrast, along the [11̅0] o direction, the LSCO and LSMO layers displayed a small difference in their coercivity values, and a small exchange bias shift was observed. As t LSCO increased above 4 nm, the easy axis for the LSCO layer remained along the [100] o direction, but it gradually rotated to the [11̅0] o direction for the LSMO layer, resulting in a large negative exchange bias shift. Therefore, we provide a way to control the magnetocrystalline anisotropy and exchange bias by tuning the interfacial exchange coupling between the two FM layers.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Strong NIR II Chiroptical Response and Magnetic Anisotropy via Modular Installation of Chiral Capping Ligands on a Light-Emitting Diradicaloid Scaffold

Low-energy molecular lumiphores have seen increased interest due to potential imaging and communications applications. Specifically, molecules that emit in the near-infrared (NIR, 700–1700 nm) or telecom (∼1260–1625 nm) regions, where attenuation is minimized in biological tissue and optical fibers, respectively, can drastically improve image resolution and depth penetration; however, bright low-energy emission is rare due to exponentially decreasing quantum yields in this region. Chiral molecules exhibiting strong NIR or telecom absorption/emission would be of particular interest due to advanced security and spintronics applications, but these compounds remain scarce and are currently restricted to lanthanide or nanoparticle-based systems. Here, we report the synthesis of a chiral organic-based NIR emitter, enabled by simple peripheral installation of chiral capping ligands. These ligands twist the achiral NIR-emissive core, breaking inversion symmetry. Furthermore, this twisting enables strong chiroptical responses observed via static and transient circular dichroism and increased magnetic anisotropy through electron paramagnetic resonance (EPR) measurements, establishing this strategy as a promising method for the development of new chiral emitters and sensors.

Electron paramagnetic resonance spectroscopy↗
DOE OSTI2025

Quantum Imaging of Ferromagnetic van der Waals Magnetic Domain Structures at Ambient Conditions

Recently discovered 2D van der Waals magnetic materials, and specifically iron–germanium–telluride (Fe5GeTe2), have attracted significant attention both from a fundamental perspective and for potential applications. Key open questions concern their domain structure and magnetic phase transition temperature as a function of sample thickness and external field, as well as implications for integration into devices such as magnetic memories and logic. Here we address key questions using a nitrogen-vacancy center based quantum magnetic microscope, enabling direct imaging of the magnetization of Fe5GeTe2 at submicrometer spatial resolution as a function of temperature, magnetic field, and thickness. This quantum imaging technique provides noninvasive, high-sensitivity measurements with high spatial resolution under ambient conditions, making it particularly well suited for probing 2D magnets. We employ spatially resolved measures, including magnetization variance and cross-correlation, and find a significant spread in transition temperature yet with no clear dependence on thickness down to 15 nm. We also identify previously unknown stripe features in the optical as well as magnetic images, which we attribute to modulations of the constituting elements during crystal synthesis and subsequent oxidation. Our results suggest that the magnetic anisotropy in this material does not play a crucial role in their magnetic properties, leading to a magnetic phase transition of Fe5GeTe2 which is largely thickness-independent down to 15 nm. Our findings could be significant in designing future spintronic devices, magnetic memories, and logic with 2D van der Waals magnetic materials.

Bindu, Bindu [Hebrew University of Jerusalem, Isra↗
DOE OSTI2025

Probing the Fine Symmetry Breaking in High-Temperature Superconductor Bi 2 Sr 2 CaCu 2 O 8+δ with Angle-Resolved Nonreciprocal Transport

After decades of research, symmetry breaking in high-temperature cuprate superconductors remains a key issue to resolve and is relevant to understanding their exotic quantum phases. In the prototypical cuprate superconductor, Bi 2 Sr 2 CaCu 2 O 8+δ (Bi2212), the possible symmetry breaking has been mostly examined microscopically with scanning tunneling microscopy and photoemission spectroscopy. However, macroscopic evidence and the direct implications for electronic transport have remained elusive. Using superconductivity-enhanced nonreciprocal transport, we report macroscopic evidence of inversion symmetry breaking in Bi2212. While the inversion symmetry breaking is subtle, its effect on nonreciprocal transport is significantly enhanced by the vortex motion during the superconducting transition, leading to a robust manifestation of inversion symmetry breaking in macroscopic transport. Combining angle-resolved nonreciprocal transport and 3D tight-binding model calculations, we derive that the inversion symmetry breaking is due to subtle crystal distortions that give rise to both in-plane and out-of-plane polar axes. Our work not only establishes nonreciprocal transport as a sensitive macroscopic probe to provide electrical transport-based evidence of fine symmetry breaking in Bi2212, but also paves the way for novel device applications such as high-temperature superconducting diodes and superconducting spintronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Coupled Lattice Polarization and Ferromagnetism in Multiferroic NiTiO 3 Thin Films

Polarization-induced weak ferromagnetism (WFM) was demonstrated a few years back in LiNbO3-type compounds, MTiO3 (M = Fe, Mn, Ni). Although the coexistence of ferroelectric polarization and ferromagnetism has been demonstrated in this rare multiferroic family before, first in bulk FeTiO3, then in thin-film NiTiO3, the coupling of the two order parameters has not been confirmed Here, we report the stabilization of polar, ferromagnetic NiTiO3 by oxide epitaxy on a LiNbO3 substrate utilizing tensile strain and demonstrate the theoretically predicted coupling between its polarization and ferromagnetism by X-ray magnetic circular dichroism under applied fields. The experimentally observed direction of ferroic ordering in the film is supported by simulations using the phase-field approach. Our work validates symmetry-based criteria and first-principles calculations of the coexistence of ferroelectricity and WFM in MTiO3 transition metal titanates crystallizing in the LiNbO3 structure. It also demonstrates the applicability of epitaxial strain as a viable alternative to high-pressure crystal growth to stabilize metastable materials and a valuable tuning parameter to simultaneously control two ferroic order parameters to create a multiferroic. Multiferroic NiTiO3 has potential applications in spintronics where ferroic switching is used, such as new four-stage memories and electromagnetic switches.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Voltage Control of Two-Magnon Scattering and Induced Anomalous Magnetoelectric Coupling in Ni–Zn Ferrite

Controlling spin dynamics through modulation of spin interactions in a fast, compact, and energy-efficient way is compelling for its abundant physical phenomena and great application potential in next-generation voltage controllable spintronic devices. In this work, we report electric field manipulation of spin dynamics-the two-magnon scattering (TMS) effect in Ni 0.5 Zn 0.5 Fe 2 O 4 (NZFO)/Pb(Mg 2/3 Nb 1/3 )-PbTiO 3 (PMN-PT) multiferroic heterostructures, which breaks the bottleneck of magnetostatic interaction-based magnetoelectric (ME) coupling in multiferroics. An alternative approach allowing spin-wave damping to be controlled by external electric field accompanied by a significant enhancement of the ME effect has been demonstrated. A two-way modulation of the TMS effect with a large magnetic anisotropy change up to 688 Oe has been obtained, referring to a 24 times ME effect enhancement at the TMS critical angle at room temperature. Furthermore, the anisotropic spin-freezing behaviors of NZFO were first determined via identifying the spatial magnetic anisotropy fluctuations. Finally, a large spin-freezing temperature change of 160 K induced by the external electric field was precisely determined by electron spin resonance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗