Search NASA⌕ Search

SEARCH · Search NASA

Results for “ANNEALING”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4

Annealing study of poly(etheretherketone)

Annealing of PEEK has been studied for two materials cold-crystallized from the rubbery amorphous state. The first material is a low molecular weight PEEK; the second is commercially available neat resin. Differential scanning calorimetry was used to monitor the melting behavior of annealed samples. The effect of thermal history on melting behavior is very complex and depends upon annealing temperature, residence time at the annealing temperature, and subsequent scanning rate. Thermal stability of both materials is improved by annealing, and for an annealing temperature near the melting point, the polymer can be stabilized against reorganization during the scan. Variations of density, degree of crystallinity, and X-ray long period were studied as a function of annealing temperature for the commercial material.

Cebe, Peggy↗

High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

Messenger, S. R.↗

Northwest Africa 428: Impact-induced Annealing of an L6 Chondrite Breccia

Northwest Africa (NWA) 428 is an L chondrite that was successively thermally metamorphosed to petrologic type-6, shocked to stage S4-S5, brecciated, and annealed to approximately petrologic type-4. Its thermal and shock history resembles that of the previously studied LL6 chondrite, Miller Range (MIL) 99301, which formed on a different asteroid. The petrologic type-6 classification of NWA 428 is based on its highly recrystallized texture, coarse metal (150 +/- 150 micron), troilite (100 +/- 170 micron), and plagioclase (20-60 micron) grains, and relatively homogeneous olivine (Fa(sub 24.4 +/- 0.6)), low-Ca pyroxene (FS(sub 2.5+/- 0~,4) , and plagioclase (Ab(sub 84.2 +/- 0.4) compositions. The petrographic criteria that indicate shock stage S4-S5 include the presence of chromite veinlets, chromite-plagioclase assemblages, numerous occurrences of metallic Cu, irregular troilite grains within metallic Fe-Ni, polycrystalline troilite, duplex plessite, metal and troilite veins, large troilite nodules, and low-Ca clinopyroxene with polysynthetic twins. If the rock had been shocked before thermal metamorphism, low-Ca clinopyroxene produced by the shock event would have transformed into orthopyroxene. Post-shock brecciation is indicated by the presence of recrystallized clasts and highly shocked clasts that form sharp boundaries with the host. Post-shock annealing is indicated by the sharp optical extinction of the olivine grains; during annealing, the damaged olivine crystal lattices healed. If temperatures exceeded those approximating petrologic type-4 (approximately 600-700 C) during annealing, the low-Ca clinopyroxene would have transformed into orthopyroxene. The other shock indicators, likewise, survived the mild annealing. An impact event is the most plausible source of post-metamorphic, post-shock annealing because any A1-26 that may have been present when the asteroid accreted would have decayed away by the time NWA 428 was annealed. The similar inferred histories of NWA 428 (L6) and MIL 99301 (LL6) indicate that impact heating affected more than 1 ordinary chondrite parent body.

Rubin, Alan E.↗

Effects of High-Temperature Annealing in Air on Hi-Nicalon Fiber-Reinforced Celsian Matrix Composites

BN/SiC-coated Hi-Nicalon fiber-reinforced celsian matrix composites (CMC) were annealed for 100 h in air at various temperatures to 1200 C, followed by flexural strength measurements at room temperature. Values of yield stress and strain, ultimate strength, and composite modulus remain almost unchanged for samples annealed up to 1100 C. A thin porous layer formed on the surface of the 1100 C annealed sample and its density decreased from 3.09 to 2.90 g/cu cm. The specimen annealed at 1200 C gained 0.43 wt%, was severely deformed, and was covered with a porous layer of thick shiny glaze which could be easily peeled off. Some gas bubbles were also present on the surface. This surface layer consisted of elongated crystals of monoclinic celsian and some amorphous phase(s). The fibers in this surface ply of the CMC had broken into small pieces. The fiber-matrix interface strength was characterized through fiber push-in technique. Values of debond stress, alpha(sub d), and frictional sliding stress, tau(sub f), for the as-fabricated CMC were 0.31+/-0.14 GPa and 10.4+/-3.1 MPa, respectively. These values compared with 0.53+/-0.47 GPa and 8.33+/-1.72 MPa for the fibers in the interior of the 1200 C annealed sample, indicating hardly any change in fiber-matrix interface strength. The effects of thermal aging on microstructure were investigated using scanning electron microscopy. Only the surface ply of the 1200 C annealed specimens had degraded from oxidation whereas the bulk interior part of the CMC was unaffected. A mechanism is proposed explaining the various steps involved during the degradation of the CMC on annealing in air at 1200 C.

Bansal, Narottam P.↗

Recursive Branching Simulated Annealing Algorithm

This innovation is a variation of a simulated-annealing optimization algorithm that uses a recursive-branching structure to parallelize the search of a parameter space for the globally optimal solution to an objective. The algorithm has been demonstrated to be more effective at searching a parameter space than traditional simulated-annealing methods for a particular problem of interest, and it can readily be applied to a wide variety of optimization problems, including those with a parameter space having both discrete-value parameters (combinatorial) and continuous-variable parameters. It can take the place of a conventional simulated- annealing, Monte-Carlo, or random- walk algorithm. In a conventional simulated-annealing (SA) algorithm, a starting configuration is randomly selected within the parameter space. The algorithm randomly selects another configuration from the parameter space and evaluates the objective function for that configuration. If the objective function value is better than the previous value, the new configuration is adopted as the new point of interest in the parameter space. If the objective function value is worse than the previous value, the new configuration may be adopted, with a probability determined by a temperature parameter, used in analogy to annealing in metals. As the optimization continues, the region of the parameter space from which new configurations can be selected shrinks, and in conjunction with lowering the annealing temperature (and thus lowering the probability for adopting configurations in parameter space with worse objective functions), the algorithm can converge on the globally optimal configuration. The Recursive Branching Simulated Annealing (RBSA) algorithm shares some features with the SA algorithm, notably including the basic principles that a starting configuration is randomly selected from within the parameter space, the algorithm tests other configurations with the goal of finding the globally optimal solution, and the region from which new configurations can be selected shrinks as the search continues. The key difference between these algorithms is that in the SA algorithm, a single path, or trajectory, is taken in parameter space, from the starting point to the globally optimal solution, while in the RBSA algorithm, many trajectories are taken; by exploring multiple regions of the parameter space simultaneously, the algorithm has been shown to converge on the globally optimal solution about an order of magnitude faster than when using conventional algorithms. Novel features of the RBSA algorithm include: 1. More efficient searching of the parameter space due to the branching structure, in which multiple random configurations are generated and multiple promising regions of the parameter space are explored; 2. The implementation of a trust region for each parameter in the parameter space, which provides a natural way of enforcing upper- and lower-bound constraints on the parameters; and 3. The optional use of a constrained gradient- search optimization, performed on the continuous variables around each branch s configuration in parameter space to improve search efficiency by allowing for fast fine-tuning of the continuous variables within the trust region at that configuration point.

Bolcar, Matthew↗

Evolution of dislocation loops and voids in post-irradiation annealed ThO 2 : A combined in-situ TEM and cluster dynamics investigation

The effect of isochronal annealing on the evolution of dislocation loop and void population in proton irradiated ThO 2 has been investigated. Post-irradiation annealing in other actinide oxides like UO 2 shows significant loop coarsening. ThO 2 samples were irradiated with 2 MeV protons up to a dose of 0.1 dpa at 600°C. Post-irradiation isochronal annealing was performed at 600, 800, 1000 and 1100°C for 1 h at each temperature using in-situ TEM. Only faulted 1/3<111> type dislocation loops were observed, and their sizes and distribution were characterized. Further, the population of self-interstitial atom (SIA) dislocation loops did not show any significant growth and coarsening. Additionally, nanometric voids were observed at annealing temperatures of 1000 and 1100°C. Using cluster dynamics (CD), we have studied the nucleation and growth of point defects and defect clusters, i.e., SIA prismatic dislocation loops and nanometric and sub-nanometric voids in proton irradiated ThO 2 . The CD model was further utilized to predict the growth and coarsening of loops and voids during isochronal annealing at the experimental and higher temperatures. The model did not predict significant SIA loop growth which closely corresponds to the TEM observations. CD predicted SIA loop coarsening is insignificant even at high annealing temperature of 1500°C because the model only considers the growth of defect clusters by absorption of like point defects, i.e., SIA loops absorb interstitials and voids absorb vacancies, and cannot account for their migration and coalescence due to elastic interaction. The CD model also predicts the evolution of nanometric voids having mean size within the error bounds of TEM observations.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Tucker-1 Boolean Tensor Factorization with Quantum Annealers

Quantum annealers are an emerging computational architecture that have the potential to address some challenging computational issues that will be left unresolved as we approach the end of the Moore's Law era of computing. D-Wave quantum annealers are designed to solve a challenging set of problems - quadratic unconstrained binary optimization problems. This makes them a natural fit for solving problems with binary or Boolean variables. Here, we explore the use of a quantum annealer to solve Boolean tensor factorization. The goal of Boolean tensor factorization is to represent a high-dimensional tensor filled with Boolean values as a product of Boolean matrices and a Boolean core tensor. We show that a particular Boolean tensor factorization problem (called Tucker-1 factorization) can be decomposed into a sequence of quadratic unconstrained binary optimization problems that can be solved with a D-Wave 2000Q quantum annealer. While quantum annealers specifically and quantum computers in general are at a fairly early stage in their development, they are currently capable of solving these Boolean tensor factorization problems. Importantly, our results show that for fairly small tensors, we are frequently able to obtain an accurate (sometimes exact) factorization using quantum annealing.

97 MATHEMATICS AND COMPUTING↗

Microwave Annealing for Fast and Effective Hydrogen Activation in Polycrystalline Silicon Passivating Contacts

Hydrogenation is a crucial step in the fabrication of high-efficiency silicon solar cells. In this study, the effectiveness of hydrogen activation is demonstrated via microwave annealing of hydrogen-rich dielectrics coated on poly-Si passivating contacts. This method is compared with conventional hydrogenation techniques, such as annealing in N2 in the presence of a hydrogen-rich source (such as hydrogenated aluminum oxide (AlOx:H), hydrogenated silicon nitride (SiNy:H), or a AlOx:H/SiNy:H stack). Key improvements observed include a reduction in J0 from 30 to <5 fA cm-2, an increase in iVoc from 690 to >730 mV, and an enhancement in effective lifetime (teff) from 0.6 to ~3.5 milliseconds on phosphorus-doped poly-Si/SiO2 passivating contact samples. With a very short annealing time of ~1-2 min, the samples passivated by AlOx:H, SiNy:H, or the stack show similar performance to samples subjected to 30 min of nitrogen annealing. Photoluminescence (PL) spectra corroborate the findings regarding the hydrogenation of the poly-Si layer and the c-Si substrate, with an increase in PL intensity after microwave annealing. Ultimately, this work suggests that microwave annealing could be a promising addition, offering flexibility to traditional firing hydrogenation processes.

hydrogenation↗

In Situ Characterization of Ferroelectric HfO 2 During Rapid Thermal Annealing

Thermal annealing is critical in governing the phase distribution, and ultimately the electrical properties, of ferroelectric hafnium oxide films. In particular, rapid thermal annealing (RTA) has been shown to favor the formation of ferroelectric crystal phases, but the dynamic behavior of the film over the course of the anneal is not well understood. Herein, synchrotron X-ray diffraction is used to characterize the phase distribution of HfO 2 films deposited by atomic layer deposition (ALD) in situ during RTA, revealing complex phase transformations occurring on the scale of seconds. All samples investigated here transform into a nonmonoclinic phase, which is required for ferroelectric films. However, this phase often converts into the more stable monoclinic phase as annealing proceeds. The kinetic barrier to the transformation to the monoclinic phase during heating is higher than 1 eV f.u. -1 In this work, the initial crystallization into the ferroelectric phase and relatively high barrier to transformation to the nonferroelectric phase suggests that careful control of the thermal annealing profile can greatly increase the ferroelectric fraction of the film. By using a fast ramp rate and a short annealing time above the ferroelectric crystallization temperature, the remanent polarization of a pure HfO 2 film can be increased more than twofold.

36 MATERIALS SCIENCE↗

Charged particle tracking with quantum annealing optimization

Abstract At the High Luminosity Large Hadron Collider (HL-LHC), traditional track reconstruction techniques that are critical for physics analysis will need to be upgraded to scale with track density. Quantum annealing has shown promise in its ability to solve combinatorial optimization problems amidst an ongoing effort to establish evidence of a quantum speedup. As a step towards exploiting such potential speedup, we investigate a track reconstruction approach by adapting the existing geometric Denby-Peterson (Hopfield) network method to the quantum annealing framework for HL-LHC conditions. We develop additional techniques to embed the problem onto existing and near-term quantum annealing hardware. Results using simulated annealing and quantum annealing with the D-Wave 2X system on the TrackML open dataset are presented, demonstrating the successful application of a quantum annealing algorithm to the track reconstruction challenge. We find that combinatorial optimization problems can effectively reconstruct tracks, suggesting possible applications for fast hardware-specific implementations at the HL-LHC while leaving open the possibility of a quantum speedup for tracking.

97 MATHEMATICS AND COMPUTING↗

Impact of post-irradiation annealing on mechanical performance of irradiated 718 alloy

Here, the effect of post-irradiation annealing on solution-annealed 718 alloy was investigated using advanced mechanical testing, fractography, scanning electron microscopy, and transmission electron microscopy. Specimens were extracted from a proton beam window operated at the Spallation Neutron Source, irradiated with 940 MeV protons to a maximum dose of approximately 9.7 displacements per atom (dpa) at a calculated temperature not exceeding 110 °C while in service. Helium and hydrogen concentrations reached about 1700 and 6900 atomic parts per million (appm), respectively. Despite irradiation and high tensile strength (yield stress over 1 GPa), the material exhibited significant ductility. Annealing at 500 °C, 700 °C, and 900 °C for 30 min resulted in an appreciable decrease in yield strength and an increase in ductility for annealing treatments at 500 °C and 900 °C relative to the strength and ductility of the as-irradiated material. The presence of helium and hydrogen led to cavity formation and cleavage-like brittle features on fractured surfaces; however, high-magnification imaging revealed the presence of small-scale ductile dimples, indicating that the fracture mechanism remained mixed. The annealed specimens retained total elongation levels of 14–33 %, and there was no sudden drop in ductility after heat treatments. The ductility level in the irradiated and annealed material is notable despite the presence of helium and hydrogen.

36 MATERIALS SCIENCE↗

Comparing three generations of D-Wave quantum annealers for minor embedded combinatorial optimization problems

Abstract Quantum annealing (QA) is a novel type of analog computation that aims to use quantum mechanical fluctuations to search for optimal solutions of Ising problems. QA in the transverse Ising model, implemented on D-Wave quantum processing units, are available as cloud computing resources. In this study we report concise benchmarks across three generations of D-Wave quantum annealers, consisting of four different devices, for the NP-hard discrete combinatorial optimization problems unweighted maximum clique and unweighted maximum cut on random graphs. The Ising, or equivalently quadratic unconstrained binary optimization, formulation of these problems do not require auxiliary variables for order reduction, and their overall structure and weights are not highly variable, which makes these problems simple test cases to understand the sampling capability of current D-Wave quantum annealers. All-to-all minor embeddings of size 52, with relatively uniform chain lengths, are used for a direct comparison across the Chimera, Pegasus, and Zephyr device topologies. A grid-search over annealing times and the minor embedding chain strengths is performed in order to determine the level of reasonable performance for each device and problem type. Experiment metrics that are reported are approximation ratios for non-broken chain samples, chain break proportions, and time-to-solution for the maximum clique problem instances. How fairly the quantum annealers sample optimal maximum cliques, for instances which contain multiple maximum cliques, is quantified using entropy of the measured ground state distributions. The newest generation of quantum annealing hardware, which has a Zephyr hardware connectivity, performed the best overall with respect to approximation ratios and chain break frequencies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Poly-Si Passivating Contacts Hydrogenation by Microwave Annealing

Hydrogenation is a crucial step in the fabrication of high-efficiency silicon solar cells. In this study, we demonstrate the for the first time effectiveness of hydrogen activation via microwave annealing of hydrogen-rich dielectrics coated on poly-Si passivating contacts. This method is compared with conventional hydrogenation techniques, such as annealing in N2 in the presence of a hydrogen-rich source (such as hydrogenated aluminum oxide (AlOx:H), hydrogenated silicon nitride (SiNy:H), or a AlOx:H/SiNy:H stack). Key improvements observed include a reduction in J0 from 30 to <5 fA/cm2, an increase in iVoc from 690 to >730 mV, and an enhancement in effective lifetime (teff) from 0.6 to ~3.5 milliseconds on phosphorus-doped poly-Si/SiO2 passivating contact samples. With a very short annealing time of ~1-2 minutes, the samples passivated by AlOx:H, SiNy:H, or the stack show similar performance to samples subjected to 30 minutes of nitrogen annealing. Photoluminescence (PL) spectra corroborate our findings regarding the hydrogenation of the poly-Si layer and the c-Si substrate, with an increase in PL intensity after microwave annealing. Ultimately, our work suggests that microwave annealing could be a promising addition, offering flexibility to traditional firing hydrogenation processes.

14 SOLAR ENERGY↗

Microstructure and hardness evolution induced by annealing of ion irradiated LiTaO 3

We report the evolution of the microstructure and mechanical properties of low-energy heavy-ion-irradiated LiTaO 3 crystals annealed at various temperatures was investigated by transmission electron microscopy (TEM) observations and nanoindentation tests to extend the applications of irradiated LiTaO 3 crystals. Before annealing, randomly distributed voids formed in an approximately 200 nm thick region at the end of the ion irradiation range, which was attributed to preferential absorption of interstitials by the amorphous-crystalline interface. After annealing, a new directional diffusion path of defects was identified, resulting in a void string. Furthermore, void string diffusion to the free surface was also found during the annealing temperature increase process, which offers a potential application in designing custom sized-thickness exfoliation at the nanoscale. Meanwhile, two competing processes were identified during the annealing process: epitaxial recrystallization from the amorphous-crystalline interface and grain nucleation process in the amorphous region, which formed phases different from the matrix crystal structure, resulting in an interaction between them. Furthermore, the hardness of irradiated samples was also found to be affected by the annealing process; in particular, a hardness decrease induced by the interstitial Fe ions in the recrystallized region was also confirmed, which can improve the processability of samples for further application.

36 MATERIALS SCIENCE↗

Atomic structure and grain shape evolution of nanodiamond during annealing in oxidizing atmosphere from neutron diffraction and MD simulations

In this work, real space pair-distribution function (PDF) analysis in conjunction with molecular dynamics (MD) simulations was applied to characterize crystal structure, shape and surface structure of diamond nanoparticles annealed in air up to 880 °C. MD simulated models of individual nanodiamond particles of various shapes and sizes were used to calculate theoretical radial distribution functions G(r) for powders with different grain size distributions. The calculated curves, showing distinct differences for the explored parameter space, were compared to the experimental G(r) functions obtained from neutron scattering for annealed detonated nanodiamond samples in a search for a model best describing the actual powders. It was found that as-synthesized nanodiamond grains are terminated by equally abundant (100), (110) and (111) crystallographic faces and their structure does not change upon annealing in air up to 280 °C. The shape and size of grains annealed above 480 °C changes due to surface etching. The etching rate differs between crystals faces and depends on temperature, resulting in the observed differences in grain shape. Below 680 °C the share of the (110) facets gradually increases and at 680 °C the grains become rhombic dodecahedra terminated solely by (110) surfaces. Further increase of the annealing temperature promotes formation of (111) surfaces and at 880 °C the preferred grain shape becomes an octahedron terminated by a variant of (111) surfaces possessing three dangling sp3 bonds per atom. At lower temperatures all grains become smaller and the size distribution moves towards the lower values. Furthermore, as the annealing temperature increases, the smallest grains disappear entirely and the average grain size grows back.

36 MATERIALS SCIENCE↗

Prediction of softening kinetics and recrystallization texture in non-isothermally annealed bulged tubes using CPFEM and CA models

A hierarchically coupled cellular automata (CA) model, crystal plasticity finite element method (CPFEM), and thermal finite element (FE) model is developed to predict the softening kinetics of the bulged steel tube during non-isothermal annealing. Through the developed model, the kinetics of softening mechanisms including static recovery (SRV) and static recrystallization (SRX), as well as the recrystallization texture are predicted. Later, the Johnson-Mehl-Avrami-Kohnogorov (JMAK) model based on the predicted SRX data is developed to interpret the recrystallization behavior of the material. To perform this study, diverse experimental tests including tube hydroforming (THF), annealing, uniaxial tensile test, hardness test, as well as microstructure observations through optical microscopy and Electron Backscatter Diffraction (EBSD) tests on steel tube are performed. The obtained experimental data are utilized to calibrate and verify the implemented CPFEM model for simulation of THF process, thermal FE model for prediction of the local temperature over annealing time, and CA algorithm for modeling of the softening kinetics and texture evolution throughout the annealing process. The study shows that the predicted deformation characteristics, softening kinetics, recrystallization texture and temperature profile during non-isothermal annealing are in good agreement with experimental data. During the annealing process, a total of four stages for the kinetics of softening mechanisms is observed: No softening; SRV only; SRV dominant; and SRX dominant. During the progress of SRX, the behavior of recrystallization is abruptly changed, confirming that two different mechanisms are controlling the kinetics of transformation.

36 MATERIALS SCIENCE↗

Ultrastructures and Mechanics of Annealed Nephila clavipes Major Ampullate Silk

The semicrystalline protein structure and impressive mechanical properties of major ampullate (MA) spider silk make it a promising natural alternative to polyacrylonitrile (PAN) fibers for carbon fiber manufacture. However, when annealed using a similar procedure to carbon fiber production, the tensile strength and Young’s modulus of MA silk decrease. Despite this, MA silk fibers annealed at 600 °C remain stronger and tougher than similarly annealed PAN but have a lower Young’s modulus. Although MA silk and PAN graphitize to similar extents, annealing disrupts the hydrogen bonding that controls crystal alignment within MA silk. Consequently, unaligned graphite crystals form in annealed MA silk, causing it to weaken, while graphite crystals in PAN maintain alignment along the fiber axis, strengthening the fibers. Finally, these shortcomings of spider silk when annealed provide insights into the selection and design of future alternative carbon fiber precursors.

36 MATERIALS SCIENCE↗

Trap passivation of 4H-SiC/SiO 2 interfaces by nitrogen annealing

We report an N 2 based annealing treatment to passivate interface traps (D it ) in n- and p-type 4H-SiC. The process has the potential to replace the commonly used hazardous and expensive gas nitric oxide (NO). N 2 postoxidation annealing reduces D it in both the upper and lower halves of the 4H-SiC bandgap, with a greater impact at the valence band edge. N 2 annealing at 1500 °C is observed to be more effective in passivating traps and positive fixed charges than NO annealing for p-type devices, whereas for n-type devices, the opposite is true. The breakdown voltages for these devices are found to be lower than that of NO annealed devices. X-ray photoelectron spectroscopy has been performed to estimate the nitrogen areal density at the interface. D it is measured as a function of nitrogen areal densities in the near interfacial regions for the different processes. Additionally, theoretical analysis through density functional theory is consistent with the measured D it profiles by showing the generation of additional states near the valence band edge due to increased nitrogen concentration. In addition to reporting the effect of N 2 annealing on both n- and p-type 4H-SiC, this work correlates the nitrogen areal densities at the interface to the D it and explains the difference in D it characteristics with nitrogen areal density between n- and p-type interfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗