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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

An Acoustic Charge Transport Imager for High Definition Television Applications: Reliability Modeling and Parametric Yield Prediction of GaAs Multiple Quantum Well Avalanche Photodiodes

Reliability modeling and parametric yield prediction of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiodes (APDs), which are of interest as an ultra-low noise image capture mechanism for high definition systems, have been investigated. First, the effect of various doping methods on the reliability of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. Median device lifetime and the activation energy of the degradation mechanism are computed for undoped, doped-barrier, and doped-well APD structures. Lifetimes for each device structure are examined via a statistically designed experiment. Analysis of variance shows that dark-current is affected primarily by device diameter, temperature and stressing time, and breakdown voltage depends on the diameter, stressing time and APD type. It is concluded that the undoped APD has the highest reliability, followed by the doped well and doped barrier devices, respectively. To determine the source of the degradation mechanism for each device structure, failure analysis using the electron-beam induced current method is performed. This analysis reveals some degree of device degradation caused by ionic impurities in the passivation layer, and energy-dispersive spectrometry subsequently verified the presence of ionic sodium as the primary contaminant. However, since all device structures are similarly passivated, sodium contamination alone does not account for the observed variation between the differently doped APDs. This effect is explained by the dopant migration during stressing, which is verified by free carrier concentration measurements using the capacitance-voltage technique.

Hunt, W. D.↗
NASA NTRS2011

Design and Development of 256x256 Linear Mode Low-Noise Avalanche Photodiode Arrays

A larger format photodiode array is always desirable for many LADAR imaging applications. However, as the array format increases, the laser power or the lens aperture has to increase to maintain the same flux per pixel thus increasing the size, weight and power of the imaging system. In order to avoid this negative impact, it is essential to improve the pixel sensitivity. The sensitivity of a short wavelength infrared linear-mode avalanche photodiode (APD) is a delicate balance of quantum efficiency, usable gain, excess noise factor, capacitance, and dark current of APD as well as the input equivalent noise of the amplifier. By using InA1As as a multiplication layer in an InP-based APD, the ionization coefficient ratio, k, is reduced from 0.40 (lnP) to 0.22, and the excess noise is reduced by about 50%. An additional improvement in excess noise of 25% was achieved by employing an impact-ionization-engineering structure with a k value of 0.15. Compared with the traditional InP structure, about 30% reduction in the noise-equivalent power with the following amplifier can be achieved. Spectrolab demonstrated 30-um mesa APD pixels with a dark current less than 10 nA and a capacitance of 60 fF at gain of 10. APD gain uninformity determines the usable gain of most pixels in an array, which is critical to focal plane array sensitivity. By fine tuning the material growth and device process, a break-down-voltage standard deviation of 0.1 V and gain of 30 on individual pixels were demonstrated in our 256x256 linear-mode APD arrays.

Yuan, Ping↗
NASA NTRS2019

High Performance GaN/AlGaN Ultraviolet Avalanche Photodiode Detector Technologies

Detection of ultraviolet (UV) bands provides distinct advantages for NASA, defense, and commercial applications, including increased spatial resolution, small pixel sizes, and large format arrays. AlxGa1-xN semiconductor alloys have attracted great interest for detection in the UV spectral region because of their potential for high optical gain, high sensitivity, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs that demonstrate consistent and reliable UV-APD performance and operation. For these UV detectors we have measured gains of above 5×10(exp 6) and high quantum efficiencies at ~350 nm enabled by a strong avalanche multiplication process. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized GaN/AlGaN UV-APD material growth and doping parameters. The high performance, variable-area GaN/AlGaN UV-APD detectors and arrays can be customized to a wide variety of sizes including large-area formats to enable sensing and high-resolution detection over UV bands of interest.

Sood, Ashok K.↗
NASA NTRS2019

GaN/AlGaN Avalanche Photodiode Detectors for High Performance Ultraviolet Sensing Applications

The shorter wavelengths of the ultraviolet (UV) band enable detectors to operate with increased spatial resolution, variable pixel sizes, and large format arrays, benefitting a variety of NASA, defense, and commercial applications. AlxGa1-xN semiconductor alloys, which have attracted much interest for detection in the UV spectral region, have been shown to enable high optical gains, high sensitivities with the potential for single photon detection, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs with large pixel sizes that demonstrate consistent and uniform device performance and operation. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized material growth and doping parameters. The use of these low defect density substrates is a critical element to realizing highly sensitive UV-APDs and arrays with suppressed dark current under high electric fields.Optical gains greater than 5X10 (exp 6) with enhanced quantum efficiencies over the 350-400 nm spectral range have been demonstrated, enabled by a strong avalanche multiplication process. Furthermore, we are developing 6X6 arrays of devices to test high gain UV-APD array performance at ~355 nm. These variable-area GaN/AlGaN UV-APD detectors and arrays enable advanced sensing performance over UV bands of interest with high resolution detection for NASA Earth Science applications.

Sood, Ashok K.↗
NASA NTRS2024

NASA Astrophysics Division Technology Heritage Study

The National Aeronautics and Space Administration’s (NASA) Astrophysics Division (APD) funds and manages missions and studies that seek to broaden our understanding of our place in the universe. These science missions are enabled by technologies developed through APD’s technology development programs. APD has funded approximately seven different technology development programs over the last ten years which support basic research and target varying Technology Readiness Levels (TRLs). The funding has targeted technology for future space flight experiments as well as suborbital science investigations. To understand the overall impact of APD’s investment on astrophysics technology advancement through their grants and contracts, APD engaged The Aerospace Corporation to conduct an independent, comprehensive Astrophysics Technology Heritage Study. The study was conducted in the 2021-2022 timeframe, first focusing priority on infusion of competed grants and general trends, followed by directed grants and further trend analysis and technology characterization. The study included three major components: a grants database, a missions database, and a survey of Principal Investigators (PIs). The study found that APD grants and contracts fund a healthy portfolio of technologies that resulted in an overall 62% infusion rate, as suborbital missions provide ample science and technology maturation and platform transition opportunities. Within the 62% of infused grants, 12% were infused into space missions and another 31% were suborbital. The study also looked at various other characteristics of the grant awards including the organizations they were awarded to and award trends by PI. Technology focus areas and detector types were also investigated, as well as technology platform transitions from on mission environment (e.g., suborbital to space). Additional feedback from PIs was also requested and evaluated including alternative benefits of grants and reasons development did, or did not, succeed.

NASA↗
DOE OSTI2011

Anti-phase domains in cubic GaN

The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {l_brace}111{r_brace} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, {mu}-Raman and cathodoluminescence spectroscopy.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Temporal dependence of transient dark counts in an avalanche photodiode: A solution for power-law behavior of afterpulsing

This paper offers a theoretical explanation of the temperature and temporal dependencies of transient dark count rates (DCRs) measured for a linear-mode silicon avalanche photodiode (APD) and the dependencies of afterpulsing that were measured in Geiger-mode Si and InGaAs/InP APDs. The temporal dependencies exhibit power-law behavior, at least to some extent. For the transient DCR, the value of the DCR for a given time period increases with decreases in temperature, while the power-law behavior remains unchanged. The transient DCR is attributed to electron emissions from traps in the multiplication layer of the APD with a high electric field, and its temporal dependence is explained by a continuous change in the electron emission rate as a function of the electric field strength. The electron emission rate is calculated using a quantum model for phonon-assisted tunnel emission. We applied the theory to the temporal dependence of afterpulsing that was measured for Si and InGaAs/InP APDs. The power-law temporal dependence is attributed to the power-law function of the electron emission rate from the traps as a function of their position across the p–n junction of the APD. Deviations from the power-law temporal dependence can be derived from the upper and lower limits of the electric field strength.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Optimization and application of cooled avalanche photodiodes for spectroscopic fluctuation measurements with ultra-fast charge exchange recombination spectroscopy

The Ultra Fast Charge Exchange Recombination Spectroscopy (UF-CHERS) diagnostic is a highly specialized spectroscopic instrument with 2 spatial channels consisting of 8 spectral channels each and a resolution of ~0.25 nm deployed at DIII-D to measure turbulent ion temperature fluctuations. Charge exchange emissions are obtained between 528-530 nm with 1 μs time resolution to study plasma instabilities. A primary challenge of extracting fluctuation measurements from raw UF-CHERS signals is photon and electronic noise. In order to reduce dark current, the Avalanche Photodiode (APD) detectors are thermoelectrically cooled. State-of-the-art components are used for the signal amplifiers and conditioners to minimize electronic noise. Due to the low incident photon power (≤ 1 nW), APDs with a gain of up to 300 are used to optimize the signal to noise ratio. Maximizing the APDs’ gain while minimizing the excess noise factor (ENF) is essential since the total noise of the diagnostic sets a floor for the minimum level of detectable broadband fluctuations. The APDs’ gain should be high enough that photon noise dominates electronic noise, but not excessive so that the ENF overwhelms plasma fluctuations. A new generation of cooled APDs and optimized preamplifiers exhibits significantly enhanced signal-to-noise compared to a previous generation. Experiments at DIII-D have allowed for characterization and optimization of the ENF vs. gain. Here, a gain of ~100 at 1700 V is found to be near optimal for most plasma conditions. Ion temperature and toroidal velocity fluctuations due to the Edge Harmonic Oscillation (EHO) in Quiescent H-mode (QH) plasmas are presented to demonstrate UF-CHERS’ capabilities.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodes

A deep-ultraviolet Al0.6Ga0.4N p–i–n avalanche photodiode (APD) structure was grown on a (0001) AlN bulk substrate by metalorganic chemical vapor deposition. The wafer was fabricated into 20 μm diameter mesa APD devices both with and without ion-implantation with nitrogen ions on the periphery of the p-type region of the diode mesa and tested. The dark current density vs bias, photoresponse, and the optical gain of the APDs with and without ion implantation were compared. The devices fabricated with ion implantation showed improved performance, exhibiting lower dark current densities of ∼1 × 10−9 A/cm2 and a higher optical gain of ∼5.2 × 105 at a current density limit of 0.3 A/cm2. The average temperature coefficients of the reverse-bias breakdown voltage were also compared. Although the data showed negative coefficients for APDs fabricated both with and without ion implantation, the ion-implanted APDs showed an improvement relative to the devices fabricated without ion-implantation.

Physics↗
DOE OSTI2022

Predictive Direct DC-Link Control for 7.2 kV Three-Port Low-Inertia Solid-State Transformer With Active Power Decoupling

Promising for applications including renewable energy and electric vehicle fast charging, a medium-voltage (MV) solid-state transformer (SST) typically has multiple modules series stacked, which requires the modules to be single phase. One critical issue of the single-phase SST is the double-line-frequency power ripple. Traditionally, large passives are used to buffer the ripple, resulting in significantly increased volume and cost. This article for the first time proposes active power decoupling (APD) for the SST and a predictive direct DC-link control method, using a current-source single-stage SST as an example. An electrolytic capacitor-less buffer port is used to absorb the ripple, which tolerates up to a 30% voltage ripple for small capacitance. The APD SST control is challenging. First, the current-source SST realizes isolation, DC link, and multiport in a single stage. Second, different from conventional SSTs or APD converters, the low-inertia DC link in this SST has a 40% switching ripple, which is difficult to stabilize. To address the control challenge, a direct DC-link control architecture and a predictive control method are proposed. Simulation and experimental results verify the proposed control method on an MV SiC modular soft-switching solid-state transformer (M-S4T) prototype. Here, the proposed APD reduces the SST volume by 53.8%. Importantly, the proposed concept is not limited to the M-S4T but is generic to other SSTs or APD converters.

14 SOLAR ENERGY↗
NASA NTRS1988

Predictions of silicon avalanche photodiode detector performance in water vapor differential absorption lidar

Performance analyses are presented which establish that over most of the range of signals expected for a down-looking differential absorption lidar (DIAL) operated at 16 km the silicon avalanche photodiode (APD) is the preferred detector for DIAL measurements of atmospheric water vapor in the 730 nm spectral region. The higher quantum efficiency of the APD's, (0.8-0.9) compared to a photomultiplier's (0.04-0.18) more than offsets the higher noise of an APD receiver. In addition to offering lower noise and hence lower random error the APD's excellent linearity and impulse recovery minimize DIAL systematic errors attributable to the detector. Estimates of the effect of detector system parameters on overall random and systematic DIAL errors are presented, and performance predictions are supported by laboratory characterization data for an APD receiver system.

Kenimer, R. L.↗
NASA NTRS1992

Microstructural observations in rapidly-solidified and heat-treated Ni3Al-Cr alloys

The microstructural development following heat treatments of several rapidly-solidified Ni3Al-Cr and Ni3Al-Cr-B alloys is presented. Depending on composition, the as-solidified samples were either 100 percent gamma-prime phase - in the form of fine antiphase domains (APD) - or a mixture of gamma-prime (APDs) and beta phases. Upon annealing, the as-solidified microstructures transform to either APD-free gamma-prime or mixtures of gamma and gamma-prime phases. For those compositions where the quenched microstructures were 100 percent gamma-prime it was observed that APD coarsening followed conventional grain-growth kinetics, but when gamma phase precipitated on the APD boundaries the rate constant changed abruptly while the time exponent remained unaffected. It was also found that alloys containing critical amounts of chromium and boron are susceptible to precipitation of the boride Cr5B3.

Carro, G.↗
NASA NTRS1995

Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures

A comprehensive characterization has been made of the static and dynamical response of conventional and multiple quantum well (MQW) avalanche photodiodes (APDs). Comparison of the gain characteristics at low voltages between the MQW and conventional APDs show a direct experimental confirmation of a structure-induced carrier multiplication due to interband impact ionization. Similar studies of the bias dependence of the excess noise characteristics show that the low-voltage gain is primarily due to electron ionization in the MQW-APDS, and to both electron and hole ionization in the conventional APDS. For the doped MQW APDS, the average gain per stage was calculated by comparing gain data with carrier profile measurements, and was found to vary from 1.03 at low bias to 1.09 near avalanche breakdown.

Menkara, H. M.↗
NASA NTRS1996

Propagation of Electrical Excitation in a Ring of Cardiac Cells: A Computer Simulation Study

The propagation of electrical excitation in a ring of cells described by the Noble, Beeler-Reuter (BR), Luo-Rudy I (LR I), and third-order simplified (TOS) mathematical models is studied using computer simulation. For each of the models it is shown that after transition from steady-state circulation to quasi-periodicity achieved by shortening the ring length (RL), the action potential duration (APD) restitution curve becomes a double-valued function and is located below the original ( that of an isolated cell) APD restitution curve. The distributions of APD and diastolic interval (DI) along a ring for the entire range of RL corresponding to quasi-periodic oscillations remain periodic with the period slightly different from two RLs. The 'S' shape of the original APD restitution curve determines the appearance of the second steady-state circulation region for short RLs. For all the models and the wide variety of their original APD restitution curves, no transition from quasi-periodicity to chaos was observed.

Kogan, B. Y.↗
NASA NTRS2000

Characterization of Advanced Avalanche Photodiodes for Water Vapor Lidar Receivers

Development of advanced differential absorption lidar (DIAL) receivers is very important to increase the accuracy of atmospheric water vapor measurements. A major component of such receivers is the optical detector. In the near-infrared wavelength range avalanche photodiodes (APD's) are the best choice for higher signal-to-noise ratio, where there are many water vapor absorption lines. In this study, characterization experiments were performed to evaluate a group of silicon-based APD's. The APD's have different structures representative of different manufacturers. The experiments include setups to calibrate these devices, as well as characterization of the effects of voltage bias and temperature on the responsivity, surface scans, noise measurements, and frequency response measurements. For each experiment, the setup, procedure, data analysis, and results are given and discussed. This research was done to choose a suitable APD detector for the development of an advanced atmospheric water vapor differential absorption lidar detection system operating either at 720, 820, or 940 nm. The results point out the benefits of using the super low ionization ratio (SLIK) structure APD for its lower noise-equivalent power, which was found to be on the order of 2 to 4 fW/Hz(sup (1/2)), with an appropriate optical system and electronics. The water vapor detection systems signal-to-noise ratio will increase by a factor of 10.

Refaat, Tamer F.↗
NASA NTRS2007

Photodiode Preamplifier for Laser Ranging With Weak Signals

An improved preamplifier circuit has been designed for processing the output of an avalanche photodiode (APD) that is used in a high-resolution laser ranging system to detect laser pulses returning from a target. The improved circuit stands in contrast to prior such circuits in which the APD output current pulses are made to pass, variously, through wide-band or narrow-band load networks before preamplification. A major disadvantage of the prior wide-band load networks is that they are highly susceptible to noise, which degrades timing resolution. A major disadvantage of the prior narrow-band load networks is that they make it difficult to sample the amplitudes of the narrow laser pulses ordinarily used in ranging. In the improved circuit, a load resistor is connected to the APD output and its value is chosen so that the time constant defined by this resistance and the APD capacitance is large, relative to the duration of a laser pulse. The APD capacitance becomes initially charged by the pulse of current generated by a return laser pulse, so that the rise time of the load-network output is comparable to the duration of the return pulse. Thus, the load-network output is characterized by a fast-rising leading edge, which is necessary for accurate pulse timing. On the other hand, the resistance-capacitance combination constitutes a lowpass filter, which helps to suppress noise. The long time constant causes the load network output pulse to have a long shallow-sloping trailing edge, which makes it easy to sample the amplitude of the return pulse. The output of the load network is fed to a low-noise, wide-band amplifier. The amplifier must be a wide-band one in order to preserve the sharp pulse rise for timing. The suppression of noise and the use of a low-noise amplifier enable the ranging system to detect relatively weak return pulses.

Abramovici, Alexander↗
NASA NTRS2014

Update on Linear Mode Photon Counting with the HgCdTe Linear Mode Avalanche Photodiode

The behavior of the gain-voltage characteristic of the mid-wavelength infrared cutoff HgCdTe linear mode avalanche photodiode (e-APD) is discussed both experimentally and theoretically as a function of the width of the multiplication region. Data are shown that demonstrate a strong dependence of the gain at a given bias voltage on the width of the n− gain region. Geometrical and fundamental theoretical models are examined to explain this behavior. The geometrical model takes into account the gain-dependent optical fill factor of the cylindrical APD. The theoretical model is based on the ballistic ionization model being developed for the HgCdTe APD. It is concluded that the fundamental theoretical explanation is the dominant effect. A model is developed that combines both the geometrical and fundamental effects. The model also takes into account the effect of the varying multiplication width in the low bias region of the gain-voltage curve. It is concluded that the lower than expected gain seen in the first 2 × 8 HgCdTe linear mode photon counting APD arrays, and higher excess noise factor, was very likely due to the larger than typical multiplication region length in the photon counting APD pixel design. The implications of these effects on device photon counting performance are discussed.

HgCdTe↗
DOE OSTI2012

Response of large area avalanche photodiodes to low energy x rays

For an experiment to study neutron radiative beta-decay, we operated large area avalanche photodiodes (APDs) near liquid nitrogen temperature to detect x rays with energies between 0.2 keV and 20 keV. Whereas there are numerous reports of x ray spectrometry using APDs at energies above 1 keV, operation near liquid nitrogen temperature allowed us to reach a nominal threshold of 0.1 keV. However, due to the short penetration depth of x rays below 1 keV, the pulse height spectrum of the APD become complex. We studied the response using monochromatic x ray beams and employed phenomenological fits of the pulse height spectrum to model the measurement of a continuum spectrum from a synchrotron. In addition, the measured pulse height spectrum was modelled using a profile for the variation in efficiency of collection of photoelectrons with depth into the APD. The best results are obtained with the collection efficiency model.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗