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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Optical constants of GaAs-AlGaAs superlattices and multiple quantum wells

The optical properties of GaAs-Al sub x Ga sub 1-xAs superlattices are calculated as a function of the frequency and superlattice structure. The comutations are performed using a partition method which combines the vectors k.p method with the pseudopotential technique. The influence of the super-structure on the electronic properties of the systems is accounted for by appropriate quantization conditions. The anisotropy and structure dependence of the dielectric constant result mainly from the contribution of the gamma region while the contributions of the other regions of the Brillouin zone are rather insensitive to the superlattice structure. The superlattice index of refraction values are shown to attain maxima at the various quantized transition energies, where for certain structures, the difference between the refractive indices of the superlattices and its corresponding Al sub x Ga sub 1-xAs alloy can be as large as 2%. In general results are in good agreement with the experimental data.

Kahen, K. B.↗
NASA NTRS1987

Radiation performance of AlGaAs concentrator cells and expected performance of cascade structures

Aluminum gallium arsenide, GaAs, silicon and InGaAs cells have been irradiated with 1 MeV electrons and 37 MeV protons. These cells are candidates for individual cells in a cascade structure. Data is presented for both electron and proton irradiation studies for one sun and a concentration level of 100X AMO. Results of calculations on the radiation resistance of cascade cell structures based on the individual cell data are also presented. Both series connected and separately connected structures are investigated.

Curtis, Henry B.↗
NASA NTRS1988

AlGaAs heterojunction lasers

The characterization of 8300 A lasers was broadened, especially in the area of beam quality. Modulation rates up to 2 Gbit/sec at output powers of 20 mW were observed, waveform fidelity was fully adequate for low BER data transmission, and wavefront measurements showed that phase aberrations were less than lamda/50. Also, individually addressable arrays of up to ten contiguous diode lasers were fabricated and tested. Each laser operates at powers up to 30 mW CW in single spatial mode. Shifting the operating wavelength of the basic CSP laser from 8300 A to 8650 A was accomplished by the addition of Si to the active region. Output power has reached 100 mW single mode, with excellent far field wave front properties. Operating life is currently approx. 1000 hrs at 35 mW CW. In addition, laser reliability, for operation at both 8300 A and 8650 A, has profited significantly from several developments in the processing procedures.

Goldstein, B.↗
NASA NTRS1987

Observations and consequences of nonuniform aluminum concentrations in the channel regions of AlGaAs channeled-substrate-planar lasers

Compositional changes in the n-clad layer within the channel region of channel substrate planar (CSP) type semiconductor lasers have been observed. As a consequece, a large optical cavity (LOC) or an enhanced substrate loss (ESL) version of the CSP geometry may result, both of which may have significantly different characteristics from those of a conventional CSP laser. The CSP-LOC generally has a larger near-field spot size, while the ESL-CSP is characterized by an off-axis, asymmetric far-field pattern.

Evans, Gary A.↗
NASA NTRS1987

Radiation performance of AlGaAs and InGaAs concentrator cells and expected performance of cascade structures

Aluminum gallium arsenide, GaAs, silicon and InGaAs cells have been irradiated with 1-MeV electrons and 37-MeV protons. These cells are candidates for individual cells in a cascade structure. Data are presented for both electron and proton irradiation studies for one sun and a concentration level of 100X AM0. Results of calculations on the radiation resistance of cascade cell structures based on the individual cell data are also presented. Both series-connected and separately connected structures are investigated.

Curtis, H. B.↗
NASA NTRS1989

Laser-Assisted Growth Of AlGaAs Films

Films of aluminum gallium arsenide grown on gallium arsenide by laser-assisted organometallic chemical-vapor deposition. Films single-crystal and contain no detectable oxygen or carbon. Laser beam impinges on substrate in quartz reaction chamber surrounded by radio-frequency induction coils. Film grows much more rapidly at 500 degree C than 450 degree C. Slight amount of interfacial oxygen detectable in film deposited at lower temperature.

Warner, Joseph D.↗
NASA NTRS1989

Single mode wavelength control of modulated AlGaAs lasers with external and internal etalon feedback

Single mode lasing without mode hops has been obtained for VSIS and CSP laser diodes with an external etalon attached to the laser's front facet for up to an 8 C range CW and a 4 C range pulsed, with .07 nm/C tuning. Tests of thin tapered-thickness (TTT) laser diodes show CW and pulsed single mode lasing over 10 C and 2 C ranges, respectively, with .08 nm/C tuning. An analysis of the TTT structure reveals the equivalent of an internal etalon. The time-resolved pulsed behavior for both types of lasers show single mode lasing within the proper temperature ranges with minor modes present only early in the optical pulse, if at all. The external etalon produces noticeable interference fringes in the farfield pattern, while those of the TTT lasers are smooth. Ongoing CW lifetest results indicate stability to within one longitudinal mode after a few hundred hours of operation, along with at least several thousand hours lifetime.

Maynard, William L.↗
NASA NTRS1991

High-Power AlGaAs Quantum-Well Lasers On Si Substrates

AlxGa1-xAs lasers of graded-index-of-refraction, separate-confinement-heterostructure, single-quantum-well type fabricated on silicon substrates by migration-enhanced molecular-beam epitaxy followed by metalorganic vapor-phase epitaxy. They are intermediate products of continuing effort to develop low-threshold-current, high-efficiency lasers for parallel optical interconnections between large-scale optoelectronic integrated circuits.

Kim, Jae-Hoon↗
NASA NTRS1991

Improving the Reliability and Modal Stability of High Power 870 nm AlGaAs CSP Laser Diodes for Applications to Free Space Communication Systems

The operating characteristics (power-current, beam divergence, etc.) and reliability assessment of high-power CSP lasers is discussed. The emission wavelength of these lasers was optimized at 860 to 880 nm. The operational characteristics of a new laser, the inverse channel substrate planar (ICSP) laser, grown by metalorganic chemical vapor deposition (MOCVD), is discussed and the reliability assessment of this laser is reported. The highlights of this study include a reduction in the threshold current value for the laser to 15 mA and a degradation rate of less than 2 kW/hr for the lasers operating at 60 mW of peak output power.

Connolly, J. C.↗
NASA NTRS1993

Coherent summation of saturated AlGaAs amplifiers

Coherent summation of the output of two saturated traveling-wave amplifiers, each injected from a common semiconductor laser and all operated CW, has resulted in a single diffraction-limited beam containing 93 percent of the power originally contained in the two individual amplified beams. The 372 mW of power in a single diffraction-limited lobe is a 1.5-fold enhancement over the power available from a single amplifier.

Schuster, Gregory L.↗
NASA NTRS1994

Theoretical study of the effect of an AlGaAs double heterostructure on metal-semiconductor-metal photodetector performance

The sizing and efficiency of an aircraft is largely determined by the performance of its high-lift system. Subsonic civil transports most often use deployable multi-element airfoils to achieve the maximum-lift requirements for landing, as well as the high lift-to-drag ratios for take-off. However, these systems produce very complex flow fields which are not fully understood by the scientific community. In order to compete in today's market place, aircraft manufacturers will have to design better high-lift systems. Therefore, a more thorough understanding of the flows associated with these systems is desired. Flight and wind-tunnel experiments have been conducted on NASA Langley's B737-100 research aircraft to obtain detailed full-scale flow measurements on a multi-element high-lift system at various flight conditions. As part of this effort, computational aerodynamic tools are being used to provide preliminary flow-field information for instrumentation development, and to provide additional insight during the data analysis and interpretation process. The purpose of this paper is to demonstrate the ability and usefulness of a three-dimensional low-order potentialflow solver, PMARC, by comparing computational results with data obtained from 1/8 scale wind-tunnel tests. Overall, correlation of experimental and computational data reveals that the panel method is able to predict reasonably well the pressures of the aircraft's multi-element wing at several spanwise stations. PMARC's versatility and usefulness is also demonstrated by accurately predicting inviscid threedimensional flow features for several intricate geometrical regions.

Salem, Ali F.↗
NASA NTRS1994

Design Issues of GaAs and AlGaAs Delta-Doped p-i-n Quantum-Well APD's

We examine the basic design issues in the optimization of GaAs delta-doped and AlGAs delta-doped quantum-well avalanche photodiode (APD) structures using a theoretical analysis based on an ensemble Monte Carlo simulation. The devices are variations of the p-i-n doped quantum-well structure previously described in the literature. They have the same low-noise, high-gain and high-bandwidth features as the p-i-n doped quantum-well device. However, the use of delta doping provides far greater control or the doping concentrations within each stage possibly enhancing the extent to which the device can be depleted. As a result, it is expected that the proposed devices will operate at higher gain levels (at very low noise) than devices previously developed.

Wang, Yang↗
NASA NTRS1992

Oxygen-induced Al surface segregation in Al(x)Ga(1-x)As and the effect of Y overlayers on the oxidation of the Y/Al(x)Ga(1-x)As interface

The oxidation of Al(x)Ga(1-x)As (x = 0.15, AlGaAs) was studied by AES and XPS at 350 C and different oxygen exposures (up to 5 x 10 exp 4 L). Also studied were the effects of yttrium overlayers (theta = 3 ML) on the oxidation of the AlGaAs surface. Substantial oxygen-induced Al surface segregation has been observed for both yttriated and nonyttriated AlGaAs surfaces which increased with increasing oxygen exposure. Also observed is a significant Y-enhanced oxidation of the AlGaAs surface. Oxidation of the yttriated AlGaAs surface was found to be a factor of 4 greater than that of the nonyttriated surface. Also, while oxidation of the nonyttriated AlGaAs yielded mainly Al2O(x) (x less than 3) and only little Ga2O3, the yttriated AlGaAs surface oxide layer was principally Ga2O3 and stoichiometric Al2O3. However, both the yttriated and nonyttriated surfaces were found to contain metallic As within the oxide layer.

Mesarwi, A.↗
NASA NTRS1991

Progress toward a 30 percent-efficient, monolithic, three-junction, two-terminal concentrator solar cell for space applications

Component efficiencies of 0.2/sq cm cells at approximately 100x AMO light concentration and 80 C temperatures are not at 15.3 percent for a 1.9 eV AlGaAs top cell, 9.9 percent for a 1.4 eV GaAs middle cell under a 1.9 eV AlGaAs filter, and 2.4 percent for a bottom 1.0 eV InGaAs cell under a GaAs substrate. The goal is to continue improvement in these performance levels and to sequentially grow these devices on a single substrate to give 30 percent efficient, monolithic, two-terminal, three-junction space concentrator cells. The broad objective is a 30 percent efficient monolithic two-terminal cell that can operate under 25 to 100x AMO light concentrations and at 75 to 100 C cell temperatures. Detailed modeling predicts that this requires three junctions. Two options are being pursued, and both use a 1.9 eV AlGaAs top junction and a 1.4 eV GaAs middle junction grown by a 1 atm OMVPE on a lattice matched substrate. Option 1 uses a low-doped GaAs substrate with a lattice mismatched 1.0 eV InGaAs cell formed on the back of the substrate. Option 2 uses a Ge substrate to which the AlGaAs and GaAs top junctions are lattice matched, with a bottom 0.7 eV Ge junction formed near the substrate interface with the GaAs growth. The projected efficiency contributions are near 16, 11, and 3 percent, respectively, from the top, middle, and bottom junctions.

Partain, L. D.↗
NASA NTRS1987

Modelling of multijunction cascade photovoltaics for space applications

An alternative class of photovoltaics was presented, which is designed to overcome two problem areas with conventional cascade designs: poor upper subcell performance and lossy intercell ohmic contact (IOC). It was shown that upper subcell quality can be improved by incorporating additional junctions into the upper subcell and that the problems with monolithic IOCs may be circumvented by using complementary pairs of three-terminal cells or a 1 x 2 voltage-matched configuration. Realistic simulations show that AlGaAs-GaAs and AlGaAs-InGaAs multijunction, multiband-gap solar cells (MJSC) may achieve benginning-of-life (BOL) one-sun, AMO efficiencies of 26 and 28 percent, respectively. Complementary cells made in the AlGaAs-InGaAs system can achieve BOL one-sun AMO efficiencies in excess of 27 percent. Seven-layer MJSCs are most advantageous for space applications due to their superior tolerance to radiation degradation.

Educato, James Louis↗
NASA NTRS1991

Progress in GaAs/CuInSe2 tandem junction solar cells

Much more power is required for spacecraft of the future than current vehicles. To meet this increased demand for power while simultaneously meeting other requirements for launch, deployment, and maneuverability, the development of higher-efficiency, lighter-weight, and more radiation resistant photovoltaic cells is essential. Mechanically stacked tandem junction solar cells based on (AlGaAs)GaAs thin film CLEFT (Cleavage of Lateral Epitaxial Film for Transfer) top cells and CuInSe2(CIS) thin film bottom cells are being developed to meet these power needs. The mechanically stacked tandem configuration is chosen due to its interconnect flexibility allowing more efficient array level performance. It also eliminates cell fabrication processing constraints associated with monolithically integrated multi-junction approaches, thus producing higher cell fabrication yields. The GaAs cell is used as the top cell due to its demonstrated high efficiency, and good radiation resistance. Furthermore, it offers a future potential for bandgap tuning using AlGaAs as the absorber to maximize cell performance. The CuInSe2 cell is used as the bottom cell due to superb radiation resistance, stability, and optimal bandgap value in combination with an AlGaAs top cell. Since both cells are incorporated as thin films, this approach provides a potential for very high specific power. This high specific power (W/kg), combined with high power density (W/sq m) resulting from the high efficiency of this approach, makes these cells ideally suited for various space applications.

Kim, N. P.↗
NASA NTRS1980

Results of the Air Force high efficiency cascaded multiple bandgap solar cell programs

The III-V semiconductor materials system that was selected for continued cascade cell development was the AlGaAs cell on GaAs cell structure. The tunnel junction used as transparent ohmic contact between the top cell and the bottom cell continued to be the central difficulty in achieving the program objective of 25 percent AMO efficiency at 25 C. During the tunnel junction and top cell developments it became apparent that the AlGaAs cell has potential for independent development as a single junction converter and is a logical extension of the present GaAs heteroface technology.

Rahilly, W. P.↗