Search NASA⌕ Search

SEARCH · Search NASA

Results for “BINDER”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Powder‐to‐Film Conversion of Nickel Single‐Atom Catalysts into Binder‐Free and Resistant Electrodes

Although a few binder-free and self-supported single-atom electrodes have been reported, achieving mechanically robust, defect-engineered, and reproducible films that preserve atomic dispersion under electrochemical operation remains challenging. This work addresses this limitation by presenting a versatile and generalizable strategy to transform powders into standalone, defect-engineered thin films hosting atomically dispersed Ni centers within conductive 2D frameworks. The physicochemical and electronic properties of these materials are thoroughly characterized using a comprehensive set of spectroscopic and microscopic techniques and confirmed the homogeneous dispersion and monoatomic nature of the Ni centers (0.94 wt.%) on the electrode films. Electrochemical testing via cyclic voltammetry and electrochemical impedance spectroscopy under a range of experimental conditions revealed that integration of Ni single atoms markedly enhanced performance and stability compared to carbon nanotube-only electrodes, maintaining integrity after 15 h of continuous operation. This improvement is accompanied by a notable reduction in charge transfer resistance (30.50 Ω) and an increase in double-layer capacitance (295.45 µF). Post-electrochemical analyses corroborated the structural integrity and robustness of the electrodes. Overall, this work bridges atomically precise catalysis and device-level electrochemistry, opening a route toward reproducible and scalable single-atom electrodes for sensing and energy conversion.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Effect of thermal treatments on electrochemical behavior of binder jetted 17-4 PH stainless steel

Binder jetted 17–4 PH stainless steel was post-processed to relate heat treatment, microstructure, and corrosion in 3.5 wt% NaCl. Specimens were sintered at 1380 or 1400 °C, solution-annealed at 1055 °C for 1 h, and aged at 482 °C for 1 h. Here, as-sintered parts showed α′-martensitic matrix with a δ-ferrite network and Cu-rich precipitates in ferrite; inclusions (MnS, NbC) promoted localized attack. solutionizing redistributed elements and reduced ferrite, while aging generated coherent Cu nano-precipitates. Corrosion resistance was highly sensitive to post-processing in which aged specimens exhibited the lowest corrosion current density and formed a thicker, stable Cr 2 O 3 -rich passive film, whereas sintered specimens degraded most. Pitting potential depended on sintering temperature and microstructure, with 1400 °C sintering yielding more positive pitting potentials and the best overall performance after aging. Although the 1400-solutionized condition showed a relatively noble pitting response versus 1380-solutionized, it displayed unstable corrosion kinetics attributed to an imperfect passive film linked to higher NbC density. XPS depth profiles corroborated these trends, showing thicker, more continuous Cr 2 O 3 in aged states and discontinuous/thinning oxides in less resistant conditions. Practically, high-temperature sintering (∼1400 °C) followed by solutionizing and aging is recommended, with further gains expected from reducing NbC/MnS populations and porosity via powder and process control.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Influence of silicon infiltration conditions on microstructure and mechanical properties in binder jet 3D printed SiC

Atmosphere, temperature, and hold time were varied for silicon infiltrated binder jet 3D printed SiC preforms. A two-step infiltration process optimized infiltration. The first step at 1450 °C under vacuum facilitated improved wetting. The second step at elevated temperature in argon advanced infiltration while suppressing vaporization. Variation of the second-step temperature (1550–1750 °C) and hold time revealed that 1550 °C for 1 h in argon following initial vacuum treatment yielded the highest silicon uptake ratio (∼96 %) with minimal residual porosity and strengths of 150–180 MPa. Flexural strength was either stable or improved with elevated temperatures up to 1000°C. In contrast, higher temperatures or extended hold times led to increased silicon vaporization and pores. The optimized process was applied to formulations with extra carbon to enhance SiC content and interconnectedness through reaction bonding, which corresponded to increased flexural strength. These findings provide guidance for silicon infiltration in additively manufactured SiC.

Yoon, Bola [ORNL] (ORCID:0000000260875373)↗
DOE OSTI2026

Porous reaction-bonded silicon nitride: Size effects for pressureless nitriding of binder jet additively manufactured silicon

The direct nitridation of binder jet additively manufactured silicon to produce porous reaction-bonded silicon nitride was explored to determine the maximum thickness of the sample that could be converted to >99% silicon nitride. The maximum thickness that could be nitrided was investigated by nitriding cubes of increasing physical size on the millimeter scale. Highly porous samples with high conversion ( > 99%) to silicon nitride were achieved in cubes with 35 mm edge length. It was shown that the silicon nitride phase content changes with increasing sample size.

Aguirre, Trevor [ORNL] (ORCID:0000000281469630)↗