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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires

Abstract Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, that is, strong spin‐orbit interaction and large Landé g‐factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topological particles research. Here, the combination of the II–VI cadmium telluride (CdTe) with the III–V InSb in the form of core–shell (InSb–CdTe) nanowires is investigated and potential applications based on the electronic structure of the InSb–CdTe interface and the epitaxy of CdTe on the InSb nanowires are explored. The electronic structure of the InSb–CdTe interface using density functional theory is determined and a type‐I band alignment is extracted with a small conduction band offset ( ⩽0.3 eV). These results indicate the potential application of these shells for surface passivation or as tunnel barriers in combination with superconductors. In terms of structural quality, it is demonstrated that the lattice‐matched CdTe can be grown epitaxially on the InSb nanowires without interfacial strain or defects. These shells do not introduce disorder to the InSb nanowires as indicated by the comparable field‐effect mobility measured for both uncapped and CdTe‐capped nanowires.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Photovoltaic fleet degradation insights

Abstract In the PV Fleet Performance Data Initiative, high‐frequency data from commercial and utility‐scale photovoltaic (PV) systems have been collected to examine performance loss rates (PLRs) at a fleet scale. To date, performance data from more than 7.2‐gigawatt (GW) capacity, 1700 sites and 19,000 inverters—approximately equivalent to 6% to 7% of the entire US PV market—have been collected. An overall PLR of −0.75%/year was found, which is in line with historical and recent findings. Tracked silicon (Si) and cadmium telluride (CdTe) performed comparably with all fixed‐tilt systems. Higher PLRs were found for hotter temperature zones; cooler climates exhibit a median −0.48%/year loss, which increases to −0.88%/year in hotter climates. High‐efficiency module technologies showed median PLRs in line with conventional Si technologies but demonstrated markedly different PLR behavior when filtered only for low‐light conditions <600 W/m 2 . Causes for this technology‐dependent behavior are under investigation.

14 SOLAR ENERGY↗
DOE OSTI2024

Quantifying spectral albedo effects on bifacial photovoltaic module measurements and system model predictions

We provide a comprehensive analysis of the effect of spectral albedo on photovoltaic (PV) module measurements and system model predictions. We demonstrate how to account for albedo in indoor bifacial device measurements by adjusting the applied irradiance using the scaled rear irradiance method, exemplified on fabricated silicon heterojunction (SHJ) modules. System model performance is studied using a detailed 3D finite-element model, DUET, for fixed-tilt and horizontal single-axis tracked (SAT) arrays between 15 and 75°N. Spectral effects cause variations in measured SHJ module short-circuit current up to 2% and efficiency variation up to 0.3% abs. We further demonstrate that rear-side spectral mismatch factors (SMMs) resulting from including or omitting spectral albedo in PV system modeling vary between ±13%, while total (front+rear) SMMs vary up to 3%, depending on the deployment configuration and latitude. SAT array SMMs are weakly correlated with latitude, while fixed-tilt array SMMs increase with latitude, driven by an increasing proportion of ground-reflected light on the front-side of modules. Ground-reflections can constitute between 2% and 32% of total incident module irradiance, with notably high (>10%) contributions for fixed-tilt arrays at high latitude. Effects of spectral albedo are most significant for: (1) fixed-tilt deployments at high latitudes, (2) wide bandgap technologies such as perovskite and cadmium telluride cells, (3) albedos which vary steeply over the technology's absorption range, and (4) high albedo ground covers. Overall, we demonstrate that omitting spectral albedo effects can result in PV measurement and system-level modeling uncertainties on the order of several percent in these cases.

14 SOLAR ENERGY↗
DOE OSTI2023

Thermomechanical Cleave of Polycrystalline CdTe Solar Cells and its Applications: A Review

One of the primary research challenges for cadmium telluride (CdTe) solar cells is addressing its open‐circuit voltage ( V OC ) deficit. While theoretical studies and single crystal work show V OC > 1 V is possible, devices remain stubbornly low at ≈800–900 mV. As absorber opto‐electronic properties (e.g., hole density, carrier lifetime) are improved, device modeling suggests that interfaces become limiting. Because CdTe‐based devices are typically grown in the superstrate configuration, the back interface is relatively accessible for manipulation and study, while the front interface (i.e., the heterojunction region) is buried under microns of material and inaccessible. NREL has developed a novel technique to thermomechanically cleave polycrystalline CdTe device stacks directly at the front interface, enabling characterization and controlled manipulation of this important region. Herein, recent work, primarily from NREL, will be reviewed, including considerations for achieving successful delamination; key scientific discoveries about the front interface that have been enabled by this technique; and practical applications, such as flexible, low‐cost solar with high power‐to‐weight ratio.

14 SOLAR ENERGY↗
DOE OSTI2024

Comprehensive Study of Carrier Recombination in High‐Efficiency CdTe Solar Cells Using Transient Photovoltage

Cadmium telluride (CdTe) solar cells represent a commercially successful photovoltaic technology, with an annual production capacity approaching 20 GW. However, improving the open-circuit voltage (V OC ) remains challenging. This study aims to deepen the understanding of charge carrier recombination in CdTe solar cells and to explore alternative dynamical characterization methods that address the limitations found in conventionally used time-resolved photoluminescence for CdTe solar cells. Transient photovoltage and transient photocurrent techniques are utilized to investigate charge carrier dynamics under conditions resembling real-world solar cell operation. The results reveal that an effective nonradiative recombination lifetime of 580 ns dominates the charge dynamics at VOC values below 850 mV. Above this threshold, radiative recombination becomes significant, with a radiative recombination coefficient of 1.1 × 10 −9 cm 3 s −1 . Additionally, the stationary charge carrier density at 1 sun is determined to be around 1 × 10 14 cm −3 . By accurately determining both radiative and nonradiative recombination, this work provides a comprehensive understanding of carrier dynamics in high-performing CdTe devices and paves the way for improving the V OC and performance of CdTe solar cells.

CdTe solar cells↗
DOE OSTI2022

Environmental Benefits of Closing the Solar Manufacturing and Recycling Loop: Preparation of Solar Manufacturing Inventories

The cumulative global solar panel waste stream is projected to reach between 60 and 78 million tonnes by 2050. Steps towards developing, demonstrating, and implementing processes that recover glass, metals, and semiconductor materials from end-of-life solar panels have already been taken. However, these processes result in the downcycling of most secondary solar materials. Critically, the costs and benefits of capturing these secondary materials for use in new solar panels are unknown. To evaluate the environmental benefit associated with solar material recycling and reuse in next generation panels, prior inventories must be updated and prepared for integration with recycling processes to examine the benefit of closing the material loop between solar panel end-of-life and new panel manufacturing. This current work describes steps taken to upgrade existing inventories that detail the manufacturing of cadmium-telluride (CdTe) panels from the Ecoinvent -v2.2 life cycle inventory database to Ecoinvent -v3. During this update, material inventories were modified to capture different realistic material supply chains within the constraints of Ecoinvent -v3. Materials discussed in detail in this work include primary flat glass, aluminum, steel, copper, and CdTe. This work demonstrated that environmental indicators such as embodied carbon, acidification, and terrestrial eutrophication associated with solar panel production can be reduced by 25% to over 40% through improved primary material sourcing.

CdTe solar panels↗
DOE OSTI2021

Impact of soiling on Si and CdTe PV modules: Case study in different Brazil climate zones

Soiling, particulate accumulation on photovoltaic (PV) module surfaces, reduces the available solar resource and the resulting generated device power. This case-study summarizes initial results of 5-year research on the contrasting soiling conditions in the tropical, subtropical, and semi-arid climates in Brazil. A major objective is to present a case study of the effects of soiling on PV module performance in different Brazil climate zones that represent the primary areas for the current and expanding Brazil solar installations. For this, the paper presents methodologies to quantify the soiling ratio (SRatio) and soiling rate (SRate) for two representative commercial technologies, polycrystalline or multicrystalline silicon (mc-Si) and thin-film cadmium telluride (CdTe) modules, through soiling monitoring stations deployed in the selected climate regions. An aim is to add to the growing soiling-research knowledge base through addressing these key factors and their relationships to critical electrical, solar resource, thermal, and local meteorological and environmental parameters. This paper presents, evaluates, and compares soiling rates and losses in Belo Horizonte, Minas Gerais (Equatorial Tropical: 19.92° S, 43.99° W), Porto Alegre, Rio Grande do Sul (Humid-Subtropical: 30.05° S, 51.17° W), and Brotas de Macaúbas, Bahia (Semi-Arid: 12.00° S, 42.63° W). The results show that soiling is moderate in all 3-regions, for example with 0.1%/day < SRate < 0.2%/day for Belo Horizonte. Precipitation dominates the cleaning of the modules in the summertime in this climate zone, while it is the major factor year-round in Rio Grande do Sul. Wind is the major issue mitigating the soiling accumulation for the Bahia installation. The methodology incorporates several key refinements, including the normalization and adjustment for the meteorological parameters (temperature, irradiance, wind, precipitation). The evaluations include the region-specific differing effects of non-uniform soiling, natural cleaning, and ambient temperatures.

14 SOLAR ENERGY↗
DOE OSTI2023

Use of non-contact voltmeter to quantify potential induced degradation in CdTe modules

Potential induced degradation (PID) is a significant reliability issue for photovoltaic modules in the field. Conventionally, to detect the PID-affected modules, all the modules in a string are individually disconnected and measured using I-V (current–voltage) tracers. It is extremely time-consuming, expensive and unsafe (if the module connectors are field aged) approach. In our approach, we aim detecting the PID-affected modules quickly, inexpensively and safely without disconnecting individual modules in the string. In this study, contactless electrostatic voltmeter’s (ESV) strength was explored to detect the PID-affected cadmium telluride (CdTe) modules in a string. These contactless measurements on high-voltage PV strings could make this technique unique and preferable to detect PID-affected modules in a string compared to the I-V curve method. In this work, a CdTe module was stressed for PID using the Aluminum (Al) foil method in a walk-in environmental chamber, which resulted in a reduction of module's peak current (I max ), peak voltage (Vmax), and fill factor (FF), and hence power (Pmax). Outdoor light I-V, EL, and ESV measurements were performed pre- and post-PID to determine the effectiveness of the non-contact ESV technique. Further, the ESV technique successfully detected the change in V max , and hence Pmax, compared to the pre-and post-PID conditions. A difference of less than 2% was observed in the results of the non-contact and non-interruptive method compared to the conventionally used interruptive voltmeter or I-V tracer method. This technique and the test results demonstrate a significant promise to identify poor-performing modules in PV string without disconnection of individual modules in the string.

14 SOLAR ENERGY↗
DOE OSTI2022

Technoeconomic Analysis of High-Value, Crystalline Silicon Photovoltaic Module Recycling Processes

Recycling is an important circular economy strategy, and for photovoltaics (PV), the one that has received the greatest research attention. Recycling of PV modules is required in Europe; everywhere else it competes in the market of end-of-life options, where cost is a primary decision factor. The vast majority of PV modules sold globally are crystalline-silicon (c-Si); most of the rest of the market are cadmium telluride thin film modules whose primary manufacturer runs its own commercial-scale recycling program. While many different c-Si recycling approaches and technologies have been proposed, they generally lack accompanying cost estimates or enough process information to model costs. Herein we develop detailed estimates of seven categories of capital and operating costs along with estimates of revenue from recovered materials for each step in two proposed recycling processes for c-Si PV modules. Using these results, we develop a hypothetical third recycling process merging process steps from the original two, estimate surcharges required to achieve minimum sustainable prices for each recycling process, as well as consider how economies of scale could reduce costs. Increasing the purity of and identifying higher-value markets for recovered materials are approaches to reducing costs and increasing recycling rates in voluntary markets.

crystalline silicon↗
DOE OSTI2021

Dielectric Screening Modulates Semiconductor Nanoplatelet Excitons

The influence of external dielectric environments is well understood for 2D semiconductor materials but overlooked for colloidally grown II–VI nanoplatelets (NPLs). In this work, we synthesize MX (M = Cd, Hg; X = Se, Te) NPLs of varying thicknesses and apply the Elliott model to extract exciton binding energies—reporting values in good agreement with prior methods and extending to less studied cadmium telluride and mercury chalcogenide NPLs. Here, we find that the exciton binding energy is modulated both by the relative effect of internal vs external dielectric and by the thickness of the semiconductor material. An analytical model shows dielectric screening increases the exciton binding energy relative to the bulk by distorting the Coulombic potential across the NPL surface. We further confirm this effect by decreasing and recovering the exciton binding energy of HgTe NPLs through washing in polarizable solvents. Our results illustrate NPLs are colloidal analogues of van der Waals 2D semiconductors and point to surface modification as an approach to control photophysics and device properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Sputtered p-Type Cu x Zn 1– x S Back Contact to CdTe Solar Cells

As thin-film cadmium telluride (CdTe) solar cells gain prominence, one particular challenge is optimizing contacts and their interfaces to transfer charge without losses in efficiency. Back contact recombination is still significant and will prevent CdTe solar technology from reaching its full potential in device efficiency, and transparent back contacts have not been developed for bifacial solar technology or multijunction solar cells. To address these challenges, here we investigate sputtered Cu x Zn 1– x S as a p-type semi-transparent back contact material to thin-film polycrystalline CdTe solar cells at Cu concentrations x = 0.30, 0.45, and 0.60. This material is selected for its high hole conductivity (160–2120 S cm –1 ), wide optical band gap (2.25–2.75 eV), and variable ionization potential (approximately 6–7 eV) that can be aligned to that of CdTe. We report that without device optimization, CdTe solar cells with these Cu x Zn 1– x S back contacts perform as well as control cells with standard ZnTe:Cu back contacts. We observe no reduction in external quantum efficiency, low contact barrier heights of approximately 0.3 eV, and carrier lifetimes on par with those of baseline CdTe. These cells are relatively stable over one year in air, with V OC and efficiency of the x = 0.30 cell decreasing by only 1 and 3%, respectively. Using scanning electron microscopy and scanning transmission electron microscopy to investigate the Cu x Zn 1– x S/CdTe interface, we demonstrate that the Cu x Zn 1– x S layer segregates into a bilayer of Cu-Te-S and Zn-Cd-S, and thermodynamic reaction calculations support these findings. Despite its bilayer formation, the back contact still functions well. This investigation explains some of the physical mechanisms governing the device stack, inspires future work to understand interfacial chemistry and charge transfer, and elicits optimization to achieve higher-efficiency CdTe cells.

14 SOLAR ENERGY↗
DOE OSTI2025

Doping in Efficient Polycrystalline CdSeTe Solar Cells via AsCl 3 Vapor Annealing

Doping in cadmium telluride (CdTe) thin-film solar cells is a critical step in producing highly efficient CdTe solar modules. To date, copper (Cu) ex-situ diffusion doping and group V in situ doping (such as arsenic, As) have been effectively used in manufacturing CdTe solar modules. However, Cu doping is prone to rapid degradation, whereas the low activation ratio of the dopants constrains group V in situ doping. Recently, ex-situ group V doping has been developed, showing an improved doping activation ratio through a solution process. Here, in this study, we developed a vapor-based AsCl 3 doping method for diffusion doping of polycrystalline CdSeTe devices. AsCl 3 vapor annealing can promote the diffusion of As into the bulk CdSeTe through a surface chemical reaction between CdTe and AsCl 3 . This approach has led to a long carrier lifetime of over 72 ns, V oc of 850 mV, and power conversion efficiency of ~18% with Au metal electrodes. The vapor-based ex situ group V doping approach offers an effective means to perform group V diffusion doping into the CdSeTe device.

14 SOLAR ENERGY↗
DOE OSTI2021

High-specific-power flexible transition metal dichalcogenide solar cells

Abstract Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics due to their ultrahigh optical absorption coefficients, desirable band gaps and self-passivated surfaces. However, challenges such as Fermi-level pinning at the metal contact–TMD interface and the inapplicability of traditional doping schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency (PCE). In addition, fabrication on flexible substrates tends to contaminate or damage TMD interfaces, further reducing performance. Here, we address these fundamental issues by employing: (1) transparent graphene contacts to mitigate Fermi-level pinning, (2) MoO x capping for doping, passivation and anti-reflection, and (3) a clean, non-damaging direct transfer method to realize devices on lightweight flexible polyimide substrates. These lead to record PCE of 5.1% and record specific power of 4.4 W g −1 for flexible TMD (WSe 2 ) solar cells, the latter on par with prevailing thin-film solar technologies cadmium telluride, copper indium gallium selenide, amorphous silicon and III-Vs. We further project that TMD solar cells could achieve specific power up to 46 W g −1 , creating unprecedented opportunities in a broad range of industries from aerospace to wearable and implantable electronics.

42 ENGINEERING↗
DOE OSTI2020

Advanced Characterization of Thin Film Solar Cells

Polycrystalline thin-film solar cells have reached a levelized cost of energy that is competitive with all other sources of electricity. The technology has significantly improved in recent years, with laboratory cell efficiencies for cadmium telluride (CdTe), perovskites, and copper indium gallium diselenide (CIGS) each exceeding 22 percent. Both CdTe and CIGS solar panels are now produced at the gigawatt scale. However, there are ongoing challenges, including the continued need to improve performance and stability while reducing cost. Advancing polycrystalline solar cell technology demands an in-depth understanding of efficiency, scaling, and degradation mechanisms, which requires sophisticated characterization methods. These methods will enable reseachers and manufacturers to improve future solar modules and systems. This work provides researchers with a concise overview of the status of thin-film solar cell technology and characterization. Chapters describe material systems and their properties and then provide an in-depth look at relevant characterization methods and the learning facilitated by each of these. Following an introductory chapter, the book provides systematic and thorough coverage of the following topics: trends to improve CdTe solar cell performance; Cu(In,Ga)Se2 and related materials; perovskite solar cells; photovoltaic device modelling; luminescence and thermal imaging of thin-film photovoltaic materials, devices, and modules; application of spatially resolved spectroscopy characterization techniques on Cu2ZnSnSe4 solar cells; time-resolved photoluminescence characterization of polycrystalline thin-film solar cells; fundamentals of electrical material and device spectroscopies applied to thin-film polycrystalline chalcogenide solar cells; nanometer-scale characterization of thin-film solar cells by atomic force microscopy-based electrical probes; scanning transmission electron microscopy characterization of solar cells; photoelectron spectroscopy methods in solar cell research; time-of-flight secondary-ion mass spectrometry and atom probe tomography; and solid-state nuclear magnetic resonance characterization for photovoltaic applications. The final chapter provides an overview and describes future prospects.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2025

Defect levels and self-compensation in iodine-doped CdTe single crystals

This study systematically documents defect levels in n-type iodine-doped cadmium telluride (CdTe:I) crystals as measured by thermoelectric effect spectroscopy, Hall-effect measurements, and photoluminescence and calculated by density functional theory. The primary donor, I Te , was identified with an activation energy of ∼0.05 eV (measured)/∼0.13 eV (calculated). Deep acceptor states, V Cd and I Te –V Cd complex, exhibited activation energies of ∼0.1 eV (measured)/∼0.19 eV (calculated) and ∼0.12 eV (measured)/∼0.24 eV (calculated), respectively. Self-compensation and Fermi level pinning were observed at ∼0.7 eV (measured)/∼1.08 eV (calculated), contributing to high resistivity in as-grown samples. Post-growth Cd annealing effectively removes compensation centers, releases iodine donors, and significantly reduces resistivity, resulting in an ideal n-type solar cell material.

Cd annealing↗
DOE OSTI2021

Ionizing photon interactions modulate the optical properties of crystals with femtosecond scale temporal resolution

In this work, we continue our study of a new method for the detection of ionizing radiation with the potential for a dramatic improvement in coincidence time resolution (CTR) for time-of-flight positron emission tomography (ToF-PET) using the modulation of a material's optical properties instead of the scintillation mechanism. Our previous work has shown that for non-scintillation materials such as bismuth silicon oxide (BSO) and cadmium telluride (CdTe), their refractive index can be modulated by annihilation photon interactions. Additionally, the ultrafast nature of this process however remains unexplored. The ionizing radiation-induced charge carriers alter the local band structure in these materials, thus changing the complex refractive index. This mechanism is routinely used at the linac coherent light source (LCLS) facility of the SLAC National Accelerator Laboratory to measure x-ray pulse arrival times with femtosecond scale resolution for photon energies between 0.5 and 10 keV. The method described here follows that example by using a frequency chirped visible continuum pulse to provide a monotonic wavelength-to-time mapping by which one can measure the time-dependent refractive index modulation. In addition, we describe an interference-based measurement setup that allows for significantly improved sensitivity while preserving a timing precision of approximately 10 fs (σ) when measuring the arrival time of below 10 keV x-ray pulses with yttrium aluminum garnet (YAG) crystal. The method is presented in the context of ToF-PET application with further discussions on the potential CTR achievable if a similar detection concept is adopted for detecting 511 keV photons. Semi-empirical analysis indicates that the predicted CTR achievable is on the order of 1 ps (FWHM).

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2020

High dynamic range CdTe mixed-mode pixel array detector (MM-PAD) for kilohertz imaging of hard x-rays

A hard x-ray, high-speed, high dynamic range scientific x-ray imager is described. The imager is based on the mixed-mode pixel array detector (MM-PAD) readout chip coupled to a 750 µm thick cadmium telluride (CdTe) sensor. The full imager is a 2 × 3 tiled array of MM-PAD sensor/readout chip hybrids. CdTe improves detection for high energy x-rays as compared to silicon sensors, enabling efficient x-ray imaging to extend to >100 keV. The detector is capable of 1 kHz imaging and in-pixel circuitry has been designed to allow for well depths of greater than 4 × 10 6 80 keV x-rays. Here, a charge integrating front-end allows for quantitative measurement of high flux x-ray images beyond the capabilities of photon counting detectors. Detector performance is summarized and experimental measurements are presented.

99 GENERAL AND MISCELLANEOUS↗