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At least 73 records · Page 4

Camera-on-a-Chip

Jet Propulsion Laboratory's research on a second generation, solid-state image sensor technology has resulted in the Complementary Metal- Oxide Semiconductor Active Pixel Sensor (CMOS), establishing an alternative to the Charged Coupled Device (CCD). Photobit Corporation, the leading supplier of CMOS image sensors, has commercialized two products of their own based on this technology: the PB-100 and PB-300. These devices are cameras on a chip, combining all camera functions. CMOS "active-pixel" digital image sensors offer several advantages over CCDs, a technology used in video and still-camera applications for 30 years. The CMOS sensors draw less energy, they use the same manufacturing platform as most microprocessors and memory chips, and they allow on-chip programming of frame size, exposure, and other parameters.

Source record

Displacement Damage Induced Dark Current and Random Telegraph Signal in P-Type Deep-Trench Pinned Photogates

This study focuses on displacement damage induced dark current and Random Telegraph Signal (RTS) in STMicroelectronics P-Type photogate, a device moving away from the 4T Pinned-Photodiode, with a sensitive volume exclusively made of boron-doped P-type epitaxy, and collecting holes instead of electrons. Results show a typical trend for the shape of dark current and RTS degradation in CMOS Image Sensors with the exception that the measured generation rates seem 2 times smaller than typical literature values in irradiated silicon. Different hypothesis on the origin of this discrepancy are explored.

displacement damage dose

A Cryogenic readout integrated circuit with analog pile-up and in-Pixel ADC for high frame rate Skipper CCD-in-CMOS Sensors

The Skipper CCD-in-CMOS Parallel Read-Out Circuit V2 (SPROCKET2) is designed to enable high frame rate readout of Skipper CCD-in-CMOS image sensors. The SPROCKET2 pixel is fabricated in a 65 nm CMOS process and occupies a 60$\mu$m $\times$ 60$\mu$m footprint. SPROCKET2 is intended to be heterogeneously integrated with a pixelated Skipper CCD-in-CMOS sensor, such that one readout pixel is connected to a multiplexed array of 16 active image sensor pixels, to match their spatial geometry. Our design benefits from the Skipper CCD-in-CMOS sensor's non-destructive readout capability to achieve exceptionally low noise through multi-sampling and averaging while optimizing for total power consumption. The pixel readout utilizes correlated double sampling to minimize 1/f noise and includes "pile-up" of ten successive samples in the analog domain before digitizing at a rate of 66.7 ksps. Measurement results of in-pixel serial SAR ADC show DNL and INL of ~0. 44 LSB and 0.58 LBS respectively. A large area array of 20,000 SPROCKET2 ADC pixels (multiplexed 1:16 to 320,000 sensor pixels) is currently under test. By reading out data over a 10 Gbps optical link, this pixel design enables a frame rate of $\sim$ 4 kfps for large sensing areas with minimal sensing deadtime. In the highest gain mode, the pixelated ADC has an input-referred resolution of 10$\mu$V with a simulated power consumption of 50$\mu$W. The pixel operates with constant current draw to minimize power-rail crosstalk.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND

Image Sensors Enhance Camera Technologies

In the 1990s, a Jet Propulsion Laboratory team led by Eric Fossum researched ways of improving complementary metal-oxide semiconductor (CMOS) image sensors in order to miniaturize cameras on spacecraft while maintaining scientific image quality. Fossum s team founded a company to commercialize the resulting CMOS active pixel sensor. Now called the Aptina Imaging Corporation, based in San Jose, California, the company has shipped over 1 billion sensors for use in applications such as digital cameras, camera phones, Web cameras, and automotive cameras. Today, one of every three cell phone cameras on the planet feature Aptina s sensor technology.

Source record

Progress in CMOS Active Pixel Image Sensors

Recent research results regarding the investigation of CMOS active pixel image sensors (APS) are reported. An investigation of various designs for the pixel, including photogate devices of various geometries and photodiode devices has been performed. Opto-electronic performance including intra-pixel photoresponse maps taken using a focused laser scanning apparatus are presented. Several imaging arrays have also been investigated. A 128 x 128 image sensor has been fabricated and characterized. Both p-well and n-well implementations have been explored. The demonstrated arrays use 2 micron CMOS design rules and have a 40 x 40 micron pixel pitch.

active

Method for implementation of back-illuminated CMOS or CCD imagers

A method for implementation of back-illuminated CMOS or CCD imagers. An oxide layer buried between silicon wafer and device silicon is provided. The oxide layer forms a passivation layer in the imaging structure. A device layer and interlayer dielectric are formed, and the silicon wafer is removed to expose the oxide layer.

Pain, Bedabrata

Structure for implementation of back-illuminated CMOS or CCD imagers

A structure for implementation of back-illuminated CMOS or CCD imagers. An epitaxial silicon layer is connected with a passivation layer, acting as a junction anode. The epitaxial silicon layer converts light passing through the passivation layer and collected by the imaging structure to photoelectrons. A semiconductor well is also provided, located opposite the passivation layer with respect to the epitaxial silicon layer, acting as a junction cathode. Prior to detection, light does not pass through a dielectric separating interconnection metal layers.

Pain, Bedabrata

Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications

This paper describes ongoing research and development of CMOS active pixel image sensors for low cost commercial applications. A number of sensor designs have been fabricated and tested in both p-well and n-well technologies. Major elements in the development of the sensor include on-chip analog signal processing circuits for the reduction of fixed pattern noise, on-chip timing and control circuits and on-chip analog-to-digital conversion (ADC). Recent results and continuing efforts in these areas will be presented.

active pixel image sensors CMOS signal processing

Development of Two Color Fluorescent Imager and Integrated Fluidic System for Nanosatellite Biology Applications

Nanosatellites offer frequent, low-cost space access as secondary payloads on launches of larger conventional satellites. We summarize the payload science and technology of the Microsatellite in-situ Space Technologies (MisST) nanosatellite for conducting automated biological experiments. The payload (two fused 10-cm cubes) includes 1) an integrated fluidics system that maintains organism viability and supports growth and 2) a fixed-focus imager with fluorescence and scattered-light imaging capabilities. The payload monitors temperature, pressure and relative humidity, and actively controls temperature. C. elegans (nematode, 50 m diameter x 1 mm long) was selected as a model organism due to previous space science experience, its completely sequenced genome, size, hardiness, and the variety of strains available. Three strains were chosen: two green GFP-tagged strains and one red tdTomato-tagged strain that label intestinal, nerve, and pharyngeal cells, respectively. The integrated fluidics system includes bioanalytical and reservoir modules. The former consists of four 150 L culture wells and a 4x5 mm imaging zone the latter includes two 8 mL fluid reservoirs for reagent and waste storage. The fluidic system is fabricated using multilayer polymer rapid prototyping: laser cutting, precision machining, die cutting, and pressure-sensitive adhesives it also includes eight solenoid-operated valves and one mini peristaltic pump. Young larval-state (L2) nematodes are loaded in C. elegans Maintenance Media (CeMM) in the bioanalytical module during pre-launch assembly. By the time orbit is established, the worms have grown to sufficient density to be imaged and are fed fresh CeMM. The strains are pumped sequentially into the imaging area, imaged, then pumped into waste. Reagent storage utilizes polymer bags under slight pressure to prevent bubble formation in wells or channels. The optical system images green and red fluorescence bands by excitation with blue (473 nm peak) and amber (587 nm peak) LEDs it achieves 8 m lateral resolution using a CMOS imaging chip (as configured for serial data speeds) or 4 m resolution using USB imaging chips. The imager consists of a modified commercial off-the-shelf CMOS chip camera, amber, blue and white LEDs, as well as a relay lens and dual-band filters to obviate moving parts while supporting both fluorescence wavelengths.

Wu, Diana Terri

Future Lightning Instruments for Weather and Climate Monitoring From LEO

Lightning is not only a natural hazard, but it also holds information about physical processes at work in deep convection and influences atmospheric oxidants that modulate ozone and methane. Hence, spaceborne lightning observations are essential for monitoring extreme events and feedbacks in Earth’s climate system. Low-Earth orbiting (LEO) lightning mapping instruments established a 25-year record of global lightning activity and resulted in a wealth of studies that motivated its designation as an Essential Climate Variable by the World Meteorological Organization. Although geostationary observations of lightning have become increasingly available since 2017, LEO lightning mappers continue to serve critical needs given their unique vantage point and acceptance as a unifying reference for geostationary lightning mapper and ground-based global lightning datasets. At the close of 2023, the Lightning Imaging Sensor (LIS) will cease operations on the International Space Station, which introduces a critical gap in LEO-based monitoring of global lightning activity. To address this need, NASA is developing new lightning mapping technology that enables future LEO-based satellite missions. Existing LEO-based lightning mappers rely on narrowband optical emissions centered on 777.4-nm and detectors that capture 500 images per second to detect lightning both day and night. Lightning can also produce optical emissions in a narrowband centered on 337-nm without any corresponding emissions at the traditionally used near-infrared (NIR) wavelength. These near-ultraviolet (UV) emissions are associated with earlier stage electrical breakdown (e.g., streamers), may frequent intense regions of deep convective storms, and may be a significant source of nitrogen oxide production in the upper atmosphere. A new lightning mapping instrument called the CubeSat Lightning Imaging and Detection Experiment (CLIDE) is being designed at NASA Marshall Space Flight Center to use high-speed, scientific CMOS image sensors capable of detecting lightning’s transient optical emissions in the near-UV and NIR during both daylit and nighttime scenes. This will extend the record of global lightning activity and help pave the way for future small satellite missions that combine radio and optical lightning detectors to obtain novel three-dimensional maps of lightning on a global scale, which can revolutionize the way lightning is used to monitor weather and understand changes in climate.

lightning

256X256 CMOS Active Pixel Sensor Camera-on-a-Chip

A CMOS imaging sensor is described that uses active pixel sensor (APS) technology which permits the integration of the detector array with on-chip timing, control and signal chain electronics. This sensor has been used to implement a CMOS APS camera-on-a-chip.

active

Plenoptic Imager for Automated Surface Navigation

An electro-optical imaging device is capable of autonomously determining the range to objects in a scene without the use of active emitters or multiple apertures. The novel, automated, low-power imaging system is based on a plenoptic camera design that was constructed as a breadboard system. Nanohmics proved feasibility of the concept by designing an optical system for a prototype plenoptic camera, developing simulated plenoptic images and range-calculation algorithms, constructing a breadboard prototype plenoptic camera, and processing images (including range calculations) from the prototype system. The breadboard demonstration included an optical subsystem comprised of a main aperture lens, a mechanical structure that holds an array of micro lenses at the focal distance from the main lens, and a structure that mates a CMOS imaging sensor the correct distance from the micro lenses. The demonstrator also featured embedded electronics for camera readout, and a post-processor executing image-processing algorithms to provide ranging information.

Zollar, Byron

Smart Camera Technology Increases Quality

When it comes to real-time image processing, everyone is an expert. People begin processing images at birth and rapidly learn to control their responses through the real-time processing of the human visual system. The human eye captures an enormous amount of information in the form of light images. In order to keep the brain from becoming overloaded with all the data, portions of an image are processed at a higher resolution than others, such as a traffic light changing colors. changing colors. In the same manner, image processing products strive to extract the information stored in light in the most efficient way possible. Digital cameras available today capture millions of pixels worth of information from incident light. However, at frame rates more than a few per second, existing digital interfaces are overwhelmed. All the user can do is store several frames to memory until that memory is full and then subsequent information is lost. New technology pairs existing digital interface technology with an off-the-shelf complementary metal oxide semiconductor (CMOS) imager to provide more than 500 frames per second of specialty image processing. The result is a cost-effective detection system unlike any other.

Source record

Advances in Detector-Integrated Filter Coatings for the Far Ultraviolet

We report on the continued development of multilayer optical coatings on back-illuminated silicon imaging sensors in order to enhance the functionality of such systems at ultraviolet wavelengths. This includes the development metal-dielectric filter structures to enable solar-blind operation, and graded thickness coatings to tune the spatial response of a detector system to the dispersion of a spectrometer. Such systems can maintain the high internal quantum efficiency afforded by the delta-doping process utilized at NASA JPL, while also providing long-wavelength rejection or a spatially optimized efficiency (or both). We present the characterization of CCD and CMOS image sensors incorporating these processes, and describe the atomic layer deposition coating processes. Such detectors are currently being developed for ground-based high energy physics applications as well as NASA orbital astrophysics instruments operating at wavelengths shorter than 200 nm.

Nikzad, Shouleh

Scalable Nanoimprint Manufacturing of Functional Multilayer Metasurface Devices

Optical metasurfaces, consisting of subwavelength-scale meta-atom arrays, hold great promise of overcoming the fundamental limitations of conventional optics. Due to their structural complexity, metasurfaces usually require high-resolution yet slow and expensive fabrication processes. Here, using a metasurface polarimetric imaging device as an example, the photonic structures and the Nanoimprint lithography (NIL) processes are designed, creating two separate NIL molds over a patterning area of > 20 mm2 with designed Moiré alignment markers by electron-beam writing, and further subsequently integrate silicon and aluminum metasurface structures on a chip. Uniquely, the silicon and aluminum metasurfaces are fabricated by using the nanolithography and 3D pattern-transfer capabilities of NIL, respectively, achieving nanometer-scale linewidth uniformity, sub-200 nm translational overlay accuracy, and <0.017 rotational alignment error while significantly reducing fabrication complexity and surface roughness. Here, the micro-sized multilayer metasurfaces have high circular polarization extinction ratios as large as ≈20 and ≈80 in blue and red wavelengths. Further, the metasurface chip-integrated CMOS imager demonstrates high accuracy in broad-band, full Stokes parameter analysis in the visible wavelength ranges and single-shot polarimetric imaging. This novel, NIL-based, multilayered nanomanufacturing approach is applicable to the scalable production of large-area functional structures for ultra-compact optic, electronic, and quantum devices.

36 MATERIALS SCIENCE