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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

An Active Substrate Driver for Enabling Mixed-Voltage SOI Systems-On-A-Chip

The current trend for space application systems is towards fully integrated systems-on-a-chip. To facilitate this drive, high-voltage transistors must reside on the same substrate as low-voltage transistors. These systems must also be radiation tolerant, particularly for space missions such as the Europa Lander and Titan Explorer. SOI CMOS technology offers high levels of radiation hardness. As a result, a high-voltage lateral MOSFET has been developed in a partially-depleted (PD) SOI technology. Utilizing high voltages causes a parasitic transistor to have non-negligible effects on a circuit. Several circuit architectures have been used to compensate for the radiation induced threshold voltage shift of the parasitic back-channel transistor. However, a new architecture for high-voltage systems must be employed to bias the substrate to voltage levels insuring all parasitic transistors remain off. An active substrate driver has been developed to accomplish task. Additional information is contained in the original extended abstract.

Jackson, S. A.↗
NASA NTRS1993

Design of a Low-Light-Level Image Sensor with On-Chip Sigma-Delta Analog-to- Digital Conversion

The design and projected performance of a low-light-level active-pixel-sensor (APS) chip with semi-parallel analog-to-digital (A/D) conversion is presented. The individual elements have been fabricated and tested using MOSIS* 2 micrometer CMOS technology, although the integrated system has not yet been fabricated. The imager consists of a 128 x 128 array of active pixels at a 50 micrometer pitch. Each column of pixels shares a 10-bit A/D converter based on first-order oversampled sigma-delta (Sigma-Delta) modulation. The 10-bit outputs of each converter are multiplexed and read out through a single set of outputs. A semi-parallel architecture is chosen to achieve 30 frames/second operation even at low light levels. The sensor is designed for less than 12 e^- rms noise performance.

Mendis, Sunetra K.↗
NASA NTRS2004

Taking evolutionary circuit design from experimentation to implementation: some useful techniques and a silicon demonstration

Current techniques in evolutionary synthesis of analogue and digital circuits designed at transistor level have focused on achieving the desired functional response, without paying sufficient attention to issues needed for a practical implementation of the resulting solution. No silicon fabrication of circuits with topologies designed by evolution has been done before, leaving open questions on the feasibility of the evolutionary circuit design approach, as well as on how high-performance, robust, or portable such designs could be when implemented in hardware. It is argued that moving from evolutionary 'design-for experimentation' to 'design-for-implementation' requires, beyond inclusion in the fitness function of measures indicative of circuit evaluation factors such as power consumption and robustness to temperature variations, the addition of certain evaluation techniques that are not common in conventional design. Several such techniques that were found to be useful in evolving designs for implementation are presented; some are general, and some are particular to the problem domain of transistor-level logic design, used here as a target application. The example used here is a multifunction NAND/NOR logic gate circuit, for which evolution obtained a creative circuit topology more compact than what has been achieved by multiplexing a NAND and a NOR gate. The circuit was fabricated in a 0.5 mum CMOS technology and silicon tests showed good correspondence with the simulations.

digital circuits designs↗
NASA NTRS2007

Design of Low Power CMOS Read-Out with TDI Function for Infrared Linear Photodiode Array Detectors

A new low voltage CMOS infrared readout circuit using the buffer-direct injection method is presented. It uses a single supply voltage of 1.8 volts and a bias current of 1uA. The time-delay integration technique is used to increase the signal to noise ratio. A current memory circuit with faulty diode detection is used to remove dark current for background compensation and to disable a photodiode in a cell if detected as faulty. Simulations are shown that verify the circuit that is currently in fabrication in 0.5ym CMOS technology.

Vizcaino, Paul↗
NASA NTRS2006

BAE Systems Radiation Hardened SpaceWire ASIC and Roadmap

An Application Specific Integrated Circuit (ASIC) that implements the SpaceWire protocol has been developed in a radiation hardened 0.25 micron CMOS, technology. This effort began in March 2003 as a joint development between the NASA Goddard Space Flight Center (GSFC) and BAE Systems. The BAE Systems SpaceWire ASlC is comprised entirely of reusable core elements, many of which are already flight-proven. It incorporates a 4-port SpaceWire router with two local ports, dual PC1 bus interfaces, a microcontroller, 32KB of internal memory, -and a memory controller for additional external memory use. The SpaceWire ASlC is planned for use on both the Geostationary Operational Environmental Satellites (GOES)-R and the Lunar Reconnaissance Orbiter (LRO). Engineering parts have already been delivered to both programs. This paper discusses the SpaceWire protocol and those elements of it that have been built into the current SpaceWire reusable core. There are features within the core that go beyond the current standard that can be enabled or disabled by the user and these will be described. The adaptation of SpaceWire to BAE Systems' On Chip Bus (OCB) for compatibility with the other reusable cores will be discussed. Optional configurations within user systems will be shown. The physical imp!ementation of the design will be described and test results from the hardware will be discussed. Finally, the BAE Systems roadmap for SpaceWire developments will be discussed, including some products already in design as well as longer term plans.

Berger, Richard↗
NASA NTRS2007

A Low-Complexity Circuit for On-Sensor Concurrent A/D Conversion and Compression

A low-complexity circuit for on-sensor compression is presented. The proposed circuit achieves complexity savings by combining a single-slope analog-to-digital converter with a Golomb-Rice entropy encoder and by implementing a low-complexity adaptation rule. The adaptation rule monitors the output codewords and minimizes their length by incrementing or decrementing the value of the Golomb-Rice coding parameter k. Its hardware implementation is one order of magnitude lower than existing adaptive algorithms. The compression circuit has been fabricated using a 0.35 micrometers CMOS technology and occupies an area of 0.0918 mm2. Test measurements confirm the validity of the design

Leon-Salas, Walter D.↗
NASA NTRS2007

Radiation Test Challenges for Scaled Commerical Memories

As sub-100nm CMOS technologies gather interest, the radiation effects performance of these technologies provide a significant challenge. In this talk, we shall discuss the radiation testing challenges as related to commercial memory devices. The focus will be on complex test and failure modes emerging in state-of-the-art Flash non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs), which are volatile. Due to their very high bit density, these device types are highly desirable for use in the natural space environment. In this presentation, we shall discuss these devices with emphasis on considerations for test and qualification methods required.

LaBel, Kenneth A.↗
NASA NTRS2007

A One Chip Hardened Solution for High Speed SpaceWire System Implementations. Session: Components

An Application Specific Integrated Circuit (ASIC) that implements the SpaceWire protocol has been developed in a radiation hardened 0.25 micron CMOS technology. This effort began in March 2003 as a joint development between the NASA Goddard Space Flight Center (GSFC) and BAE Systems. The BAE Systems SpaceWire ASIC is comprised entirely of reusable core elements, many of which are already flight-proven. It incorporates a router with 4 SpaceWire ports and two local ports, dual PC1 bus interfaces, a microcontroller, 32KB of internal memory, and a memory controller for additional external memory use. The SpaceWire cores are also reused in other ASICs under development. The SpaceWire ASIC is planned for use on the Geostationary Operational Environmental Satellites (GOES)-R, the Lunar Reconnaissance Orbiter (LRO) and other missions. Engineering and flight parts have been delivered to programs and users. This paper reviews the SpaceWire protocol and those elements of it that have been built into the current and next SpaceWire reusable cores and features within the core that go beyond the current standard and can be enabled or disabled by the user. The adaptation of SpaceWire to BAE Systems' On Chip Bus (OCB) for compatibility with the other reusable cores will be reviewed and highlighted. Optional configurations within user systems and test boards will be shown. The physical implementation of the design will be described and test results from the hardware will be discussed. Application of this ASIC and other ASICs containing the SpaceWire cores and embedded microcontroller to Plug and Play and reconfigurable implementations will be described. Finally, the BAE Systems roadmap for SpaceWire developments will be updated, including some products already in design as well as longer term plans.

Marshall, Joseph R.↗
NASA NTRS2012

High fidelity, radiation tolerant analog-to-digital converters

Techniques for an analog-to-digital converter (ADC) using pipeline architecture includes a linearization technique for a spurious-free dynamic range (SFDR) over 80 deciBels. In some embodiments, sampling rates exceed a megahertz. According to a second approach, a switched-capacitor circuit is configured for correct operation in a high radiation environment. In one embodiment, the combination yields high fidelity ADC (>88 deciBel SFDR) while sampling at 5 megahertz sampling rates and consuming <60 milliWatts. Furthermore, even though it is manufactured in a commercial 0.25-.mu.m CMOS technology (1 .mu.m=12.sup.-6 meters), it maintains this performance in harsh radiation environments. Specifically, the stated performance is sustained through a highest tested 2 megarad(Si) total dose, and the ADC displays no latchup up to a highest tested linear energy transfer of 63 million electron Volts square centimeters per milligram at elevated temperature (131 degrees C.) and supply (2.7 Volts, versus 2.5 Volts nominal).

Wang, Charles Chang-I↗
NASA NTRS2013

Fast, High-Precision Readout Circuit for Detector Arrays

The GEO-CAPE mission described in NASA's Earth Science and Applications Decadal Survey requires high spatial, temporal, and spectral resolution measurements to monitor and characterize the rapidly changing chemistry of the troposphere over North and South Americas. High-frame-rate focal plane arrays (FPAs) with many pixels are needed to enable such measurements. A high-throughput digital detector readout integrated circuit (ROIC) that meets the GEO-CAPE FPA needs has been developed, fabricated, and tested. The ROIC is based on an innovative charge integrating, fast, high-precision analog-to-digital circuit that is built into each pixel. The 128×128-pixel ROIC digitizes all 16,384 pixels simultaneously at frame rates up to 16 kHz to provide a completely digital output on a single integrated circuit at an unprecedented rate of 262 million pixels per second. The approach eliminates the need for off focal plane electronics, greatly reducing volume, mass, and power compared to conventional FPA implementations. A focal plane based on this ROIC will require less than 2 W of power on a 1×1-cm integrated circuit. The ROIC is fabricated of silicon using CMOS technology. It is designed to be indium bump bonded to a variety of detector materials including silicon PIN diodes, indium antimonide (InSb), indium gallium arsenide (In- GaAs), and mercury cadmium telluride (HgCdTe) detector arrays to provide coverage over a broad spectral range in the infrared, visible, and ultraviolet spectral ranges.

Rider, David M.↗
NASA NTRS1995

CMOS Charged Particle Spectrometers

Integrated circuits manufactured in CMOS technology, have been developed as diffusion-based charged particle spectrometers for space applications. A four-chip spectrometer designed to count protons and heavier ions was flown on the Clementine spacecraft, and the spectrometer proton response is compared to GOES-6 proton data for the 21 Feb. 1994 solar proton event.

charged↗
NASA NTRS2002

Integrated imaging sensor systems with CMOS active pixel sensor technology

This paper discusses common approaches to CMOS APS technology, as well as specific results on the five-wire programmable digital camera-on-a-chip developed at JPL. The paper also reports recent research in the design, operation, and performance of APS imagers for several imager applications.

double sampling↗
NASA NTRS1995

JPL CMOS Active Pixel Sensor Technology

This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.

Space Microelectronics Image Sensors APS Digital I↗
NASA NTRS2000

High responsivity CMOS imager pixel implemented in SOI technology

Availability of mature sub-micron CMOS technology and the advent of the new low noise active pixel sensor (APS) concept have enabled the development of low power, miniature, single-chip, CMOS digital imagers in the decade of the 1990's.

front-illuminated high responsivity CMOS high-phot↗
NASA NTRS2011

Modeling the effects of hydrogen and dose rate sensitivity in CMOS and bipolar technologies

Low dose rate (LDR) and high dose rate (HDR) experiments on field-oxide-field-effect-transistors (FOXFETs) and gated lateral pnp (GLPNP) bipolar transistors indicate that there is a dose rate enhancement factor (EF) associated with radiation-induced degradation. This EF is also affect by the presence of hydrogen in the oxide. In this work, we developed a one dimensional (1-D) numerical calculations code to investigate the key mechanisms that describe the dose rate sensitivity and the effect of hydrogen on dose rate effects. We used a finite-difference methodology for the numerical calculations that allow for computing solutions for the densities of the mobile species as well as for the electrostatic potential at nodes contained within a mesh superimposed on the solution domain. Results from calculations of damage EF indicate that oxide thickness, distribution of hole traps and hole capture cross-section affect dose rate sensitivity. In addition, calculations show that molecular hydrogen cracking at positively charged defects may be a key reaction relating hydrogen and dose rate response. Comparison to experimental data on bipolar and CMOS devices results in good agreement with the dose rate calculations of interface trap buildup

Barnaby, Hugh↗