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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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58 records · Page 4

Induced junction solar cell and method of fabrication

An induced junction solar cell is fabricated on a p-type silicon substrate by first diffusing a grid of criss-crossed current collecting n+ stripes and thermally growing a thin SiO2 film, and then, using silicon-rich chemical vapor deposition (CVD), producing a layer of SiO2 having inherent defects, such as silicon interstices, which function as deep traps for spontaneous positive charges. Ion implantation increases the stable positive charge distribution for a greater inversion layer in the p-type silicon near the surface. After etching through the oxide to parallel collecting stripes, a pattern of metal is produced consisting of a set of contact stripes over the exposed collecting stripes and a diamond shaped pattern which functions as a current collection bus. Then the reverse side is metallized.

Maserjian, J.↗

Production and Characterization of Carbon Nanotubes and Nanotube-Based Composites

The Nobel Prize winning discovery of the Buckuball (C60) in 1985 at Rice University by a group including Dr. Richard Smalley led to the whole new class of carbon allotropes including fullerenes and nanotubes. Especially interesting from many viewpoints are single-walled carbon nanotubes, which structurally are like a single graphitic sheet wrapped around a cylinder and capped at the ends. This cylinders have diameter as small as 0.5 - 2 nm (1/100,000th the diameter of a human hair) and are as long as 0.1 - 1 mm. Nanotubes are really individual molecules and believed to be defect-free, leading to high tensile strength despite their low density. Additionally, these fibers exhibit electrical conductivity as high as copper, thermal conductivity as high as diamond, strength 100 times higher than steel at one-sixth the weight, and high strain to failure. Thus it is believed that developments in the field of nanotechnology will lead to stronger and lighter composite materials for next generation spacecraft. Lack of a bulk method of production is the primary reason nanotubes are not used widely today. Toward this goal JSC nanotube team is exploring three distinct production techniques: laser ablation, arc discharge and chemical vapor deposition (CVD, in collaboration with Rice University). In laser ablation technique high-power laser impinges on the piece of carbon containing small amount of catalyst, and nanotubes self-assemble from the resulting carbon vapor. In arc generator similar vapor is created in arc discharge between carbon electrodes with catalyst. In CVD method nanotubes grow at much lower temperature on small catalyst particles from carbon-containing feedstock gas (methane or carbon monoxide). As of now, laser ablation produces cleanest material, but mass yield is rather small. Arc discharge produces grams of material, but purity is low. CVD technique is still in baby steps, but preliminary results look promising, as well as perspective of scaling the process up. We are also working on necessary purification of nanotubes. Applications of nanotubes are in such various fields as lightweight composites, molecular electronics, energy storage (electrodes in Li ion batteries), flat panel displays, conductive polymers, etc. JSC nanotube team is focused on development of lightweight materials. We work on the injection thermoset epoxies reinforced with nanotubes. Early results show good wetting of nanotube surface with epoxy, which is very important. More research will be possible as more nanotubes become available.

Nikolaev, Pavel↗

Pre-Finishing of SiC for Optical Applications

13 Manufacturing & Prototyping A method is based on two unique processing steps that are both based on deterministic machining processes using a single-point diamond turning (SPDT) machine. In the first step, a high-MRR (material removal rate) process is used to machine the part within several microns of the final geometry. In the second step, a low-MRR process is used to machine the part to near optical quality using a novel ductile regime machining (DRM) process. DRM is a deterministic machining process associated with conditions under high hydrostatic pressures and very small depths of cut. Under such conditions, using high negative-rake angle cutting tools, the high-pressure region near the tool corresponds to a plastic zone, where even a brittle material will behave in a ductile manner. In the high-MRR processing step, the objective is to remove material with a sufficiently high rate such that the process is economical, without inducing large-scale subsurface damage. A laser-assisted machining approach was evaluated whereby a CO2 laser was focused in advance of the cutting tool. While CVD (chemical vapor deposition) SiC was successfully machined with this approach, the cutting forces were substantially higher than cuts at room temperature under the same machining conditions. During the experiments, the expansion of the part and the tool due to the heating was carefully accounted for. The higher cutting forces are most likely due to a small reduction in the shear strength of the material compared with a larger increase in friction forces due to the thermal softening effect. The key advantage is that the hybrid machine approach has the potential to achieve optical quality without the need for a separate optical finishing step. Also, this method is scalable, so one can easily progress from machining 50-mm-diameter samples to the 250-mm-diameter mirror that NASA desires.

Rozzi, Jay↗

Electron cyclotron resonance deposition of a-Si:H and a-C:H films

Amorphous silicon (a-Si:H) and amorphous carbon (a-C:H) films have been deposited by electron cyclotron resonance (ECR) microwave plasma enhanced CVD. A high deposition rate of 25 A/sec and a light-to-dark conductivity ratio of 500,000 for a-Si:H films have been achieved by the ECR process using a pure silane plasma. ECR microwave plasmas have been analyzed by in situ optical emission spectroscopy (OES) and have shown a strong H-asterisk emission at 434 nm indicating higher chemical reactivity than RF plasmas. The linear correlation between the film deposition rate and the SiH-asterisk emission intensity of ECR silane plasma suggests that SiH-asterisk species are related to the neutral radicals which are responsible for the a-Si:H film deposition. Hard and soft a-C:H films have been deposited by ECR with and without RF bias power, respectively. The RF bias to the substrate is found to play a critical role in determining the film structure and the carbon bonding configuration of ECR deposited a-C:H films. Raman spectra of these films indicate that ECR deposition conditions can be optimized to produce diamond films.

Shing, Y. H.↗