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Gas phase ion-molecule phosphine reactions in pure and binary mixtures by ion cyclotron resonance spectroscopy, considering acidity and basicity
Ion cyclotron resonance power absorption, deriving expression for average ion kinetic energy at saturation in steady state limit
An experimental apparatus to scientifically investigate the process of Electron-Cyclotron-Resonance (ECR) plasma acceleration has been tested. The apparatus consists of a vacuum facility, a 20 kW microwave power supply, and an argon ECR plasma thruster. Present instrumentation allows measurement of microwave input power, reflected power, propellant flow rate, and static pressure in the vacuum tank. In initial tests, an argon ECR plasma has been initiated repeatably at power levels ranging from 0.3 to 7.0 kW. The ECR plasma appears to diverge and separate from the applied magnetic field as predicted by theory. These tests suggest that the ECR plasma acceleration concept can be studied scientifically in the new apparatus.
A general theoretical treatment of energetic oxygen ion conic formation through cyclotron resonance with magnetospheric electromagnetic plasma turbulence is presented. With suitable assumptions, there exists a similarity regime in which the process may be profitably characterized by two parameters corresponding roughly to the velocity scale and pitch angle of the ion distribution. These may be independently determined from the wave and particle observations of a conic event, as is illustrated here using typical auroral passes of the Dynamics Explorer 1 satellite. The predictions of the theory are found to be in excellent agreement with the observations.
Thermal product distributions and energy dependencies of ion-molecule reactions in allene and propyne, using ion cyclotron resonance
Thermal energy rate constants of ion-molecule reactions in gaseous hydrogen, deuterium and HD, using ion cyclotron resonance method
The paper reports electron cyclotron resonance (ECR) deposition of a-Si:H and a-SiC:H thin films using SiH4, CH4, and hydrogen mixed gas plasmas. The ECR deposition conditions were investigated in the pressure region of 0.1 to 100 mtorr, and the film properties were characterized by light and dark conductivity measurements, XRD, Raman spectroscopy, optical transmission, and IR spectroscopy. In addition, the hydrogen dilution effect on ECR-deposited a-SiC:H was investigated.
The effect of a small population of streaming ions on low-frequency waves with frequencies below the ion cyclotron frequency is analyzed for three modes of interest: Alfven waves, magnetosonic waves, and ion-cyclotron waves. The instability mechanism is the anomalous cyclotron resonance of the waves with the streaming ions. Conditions for excitation of the three types of waves are derived and expressions for the growth rates are obtained. Excitation of Alfven waves is possible even if the ratio of the densities of the streaming ions to the thermal ions is very small. For magnetosonic waves, excitation can easily occur if waves are propagating parallel or nearly parallel to the ambient magnetic field. As for ion-cyclotron waves, it is found that for the ion-whistler branch the excitation is suppressed over a broader range of wave frequencies than for the fast magnetosonic branch.
Dialkyl ketone ion in double McLafferty rearrangement, applying ion cyclotron resonance to structural study
Reactions of various positive ions with water vapor were studied by ion cyclotron resonance mass spectrometric techniques. Rate constants and product distributions were determined for reactions of the ions: Ar(+), Co(+), N2(+), and CO2(+), CH2(+), and CH4(+), CH2Cl(+), HCO(+), H2CO(+), H2COH(+), H2S(+) and HS(+). The results obtained in this work are compared with earlier reported data where available.
Kinetic analysis of ion-molecule reactions in Ar-N mixtures with H, deuterium and HD using ion ejection mode of ion-cyclotron- resonance spectroscopy
Ion-molecule collision charge transfer and momentum transfer relaxation rates, using ion cyclotron resonance heterodyning method
A simple analysis is provided to determine the characteristics of an electron cyclotron resonance (ECR) plasma source for the generation of active nitrogen species in the molecular beam epitaxy of III-V nitrides. The effects of reactor geometry, pressure, power, and flow rate on the dissociation efficiency and ion flux are presented. Pulsing the input power is proposed to reduce the ion flux.
We explain the relative line strengths in gamma-ray bursts in terms of cyclotron resonant scattering. We describe the line signature of neutron star rotation and discuss the possibility that variations seen in the strengths and widths of the lines in GB780325 and GB870303 are due to rotation.
Using recent compilations of detailed X-ray observations and spectral models of exceptional quality, we record the electron cyclotron resonance absorption (ECRA) features that have been detected in 45 pulsating high-mass X-ray binaries (HMXBs) and ultraluminous X-ray (ULX) sources harboring neutron stars, although seven of these detections are still questionable and another 21 are single and/or not independently confirmed. From the comprehensive catalogs of Jaisawal & Naik and Staubert et al. and from several additional recent observations, we produce two lists of HMXB ECRA sources: a list of 17 sources in which multiple ECRA lines or single very low-energy lines are seen, in which we can reasonably assume that the lowest energy reveals the fundamental cyclotron level for each source; and a "contaminated" list of 38 sources including the 21 detections of single ECRA lines that may (not) be higher-level harmonics. Both lists confirm a previous result that we have obtained independently by modeling the propeller lines of Magellanic HMXB pulsars: the surface dipolar magnetic fields B * of HMXB neutron stars are segregated around five distinct values with B * = 0.28 ± 0.08, 0.55 ± 0.11, 1.3 ± 0.37, 3.0 ± 0.68 and 7.9 ± 3.1, in units of TG. However, an explanation of this phenomenon is currently lacking. We have found no correlation between these B * values and the corresponding observed spin periods, spin period derivatives, orbital periods, maximum X-ray luminosities, neutron star masses or companion star masses.
Amorphous and microcrystalline silicon carbon films (a-SiC:H, micro-c-SiC:H) have been deposited using SiH4, CH4 and H2 mixed gas ECR (electron cyclotron resonance) plasmas. The optical bandgap of a-SiC:H films is not dependent on the hydrogen dilution in the ECR plasma. The deposition rate of a-SiC:H films is found to be strongly dependent on the ECR magnetic field and the hydrogen dilution. The hydrogen dilution effect on the deposition rate indicates that the etching in ECR hydrogen plasmas plays an important role in the deposition of a-SiC:H films. The optical constants n and k of ECR-deposited a-SiC:H films in the wavelength region of 0.4 to 1.0 micron are determined to be 2.03-1.90 and 0.04-0.00, respectively. The microstructures of ECR-deposited micro-c-SiC:H films are shown by X-ray diffraction and SEM (scanning electron microscopy) to be composed of 1000-A alpha-SiC microcrystallites and amorphous network structures.
The dependence on deposition temperature of the mobility gap density of states has been determined for hydrogenated amorphous silicon (a-Si:H) films grown by electron cyclotron resonance (ECR) microwave plasma CVD. A minimum in the integrated deep defect density of 1 x 10 exp 16/cu cm was found to occur at a temperature of approximately 250 C, while an Urbach slope minimum of 52 meV was observed at 175 C under our deposition conditions. Based on these measurements the ECR-grown films were found to be of excellent device quality and comparable to a-Si:H films grown by RF plasma-enhanced CVD.
It is demonstrated that the steady-state and kinetic characteristics of ECR (electron cyclotron resonance) and RF glow discharge plasmas can be readily monitored by OES (optical emission spectroscopy) in real time during a-Si:H and a-SiC:H film depositions using an OMA detection system. The ECR and RF glow discharge plasmas used for a-Si:H and a-SiC:H film depositions were studied by monitoring the emission of SiH(asterisk), H(asterisk), H(asterisk)2, and CH(asterisk) excited states. The OES of the ECR plasma shows a strong emission at 434 nm from H(asterisk), which is not detectable in the glow discharge plasma. Steady-state OES studies have established preliminary correlations between SiH(asterisk) and CH(asterisk) emission intensities and the film deposition rate. Transient OES spectra of SiH4 and CH4 plasmas have shown different kinetics in SiH(asterisk) and CH(asterisk) emission intensities. Transient studies of the SiH(asterisk) emission intensity have indicated that additional mechanisms for producing the SiH(asterisk) species become evident in hydrogen-diluted silane plasmas.