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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS2015

Novel Materials, Processing, and Device Technologies for Space Exploration with Potential Dual-Use Applications

We highlight results of a broad spectrum of efforts on lower-temperature processing of nanomaterials, novel approaches to energy conversion, and environmentally rugged devices. Solution-processed quantum dots of copper indium chalcogenide semiconductors and multi-walled carbon nanotubes from lower-temperature spray pyrolysis are enabled by novel (precursor) chemistry. Metal-doped zinc oxide (ZnO) nanostructured components of photovoltaic cells have been grown in solution at low temperature on a conductive indium tin oxide substrate. Arrays of ZnO nanorods can be templated and decorated with various semiconductor and metallic nanoparticles. Utilizing ZnO in a more broadly defined energy conversion sense as photocatalysts, unwanted organic waste materials can potentially be re-purposed. Current efforts on charge carrier dynamics in nanoscale electrode architectures used in photoelectrochemical cells for generating solar electricity and fuels are described. The objective is to develop oxide nanowire-based electrode architectures that exhibit improved charge separation, charge collection and allow for efficient light absorption. Investigation of the charge carrier transport and recombination properties of the electrodes will aid in the understanding of how nanowire architectures improve performance of electrodes for dye-sensitized solar cells. Nanomaterials can be incorporated in a number of advanced higher-performance (i.e. mass specific power) photovoltaic arrays. Advanced technologies for the deposition of 4H-silicon carbide are described. The use of novel precursors, advanced processing, and process studies, including modeling are discussed from the perspective of enhancing the performance of this promising material for enabling technologies such as solar electric propulsion. Potential impact(s) of these technologies for a variety of aerospace applications are highlighted throughout. Finally, examples are given of technologies with potential spin-offs for dual-use or terrestrial applications.

thin films↗
NASA NTRSDate not supplied

Quantum Mechanical Simulations of Dynamics of Electronic Excitations in Low-Dimensional Photovoltaics Materials

Dynamics of electronically excited states including exciton generation and relaxation, exciton-exciton interaction, and charge/energy transfer and transport, are critical to understanding and optimizing photovoltaic materials. Although considerable progress has been made, accurate experimental characterization of such crucial dynamics remains extremely challenging, especially in low-dimensional materials. In this talk, I will discuss how the advancement of quantum mechanical simulations of the dynamics of electronic excitations can reveal the physical mechanisms hindering or improving solar energy harvest. Specifically, we find that surface dangling-bond defects on silicon quantum dots cause rapid charge recombination and low carrier mobility in the inorganic-organic PV cells. Although small quantum dots are essentially free of defects, their optical gaps are too large. To solve this issue, a full-spectrum-light-absorption scheme is computationally designed, taking advantage of complexity and flexibility of low-dimensional materials consisting of different characteristics and dimensions. In this scheme the multifunctional ligands are used to (1) passivate against oxidation, (2) facilitate interfacial charge transfer, and (3) improve both charge transport and optical absorption. A joint theoretical and experimental study has demonstrated the feasibility of this approach. Finally, I will briefly talk about how this scheme and the well-tested quantum mechanical simulations can be employed to help improve energy-conversion efficiency in perovskite photovoltaics including perovskite-based tandem cells.

Zhigang Wu↗
NASA NTRS1975

Solar cells for terrestrial applications

The power efficiency curves of photovoltaic solar cells were investigated as a function of the forbidden energy gap (E sub g) and the current-voltage characteristic of the diode. Minority carrier injection, depletion layer recombination, and interface recombination terms were considered in models for the I-V characteristic. The collection efficiency for photons with energy between (E sub g) and an upper energy cutoff (E sub w) was assumed to be 100% and zero otherwise. Results are presented in terms of a single parameter related to the ratio of depletion layer width and minority carrier diffusion length. It was found that increasing depletion layer recombination shifts the efficiency curves to larger values of the energy without changing the shape of the efficiency curve appreciably. It is believed that similar results would be obtained whenever the quality factors in the exponential energy gap and forward bias terms are equal.

Chernow, F.↗
NASA NTRS1982

Analysis and evaluation in the production process and equipment area of the low-cost solar array project

It was found that the Solarex metallization design and process selection should be modified to yield substantially higher output of the 10 cm x 10 cm cells, while the Westinghouse design is extremely close to the optimum. In addition, further attention to the Solarex pn junction and base high/low junction formation processes could be beneficial. For the future efficiency improvement, it was found that refinement of the various minority carrier lifetime measurement methods is needed, as well as considerably increased sophistication in the interpretation of the results of these methods. In addition, it was determined that further experimental investigation of the Auger lifetime is needed, to conclusively determine the Auger coefficients for the direct Auger recombination at high majority carrier concentrations.

Wolf, M.↗
NASA NTRS1979

Effect of dopants on annealing performance of silicon solar cells

The optimum annealing parameters of time and temperature for producing cell output recovery were established. Devices made from gallium doped and boron doped silicon were investigated. The cells ranged in resistivity from 0.1 to 20 ohm-cm and in thickness from 50 to 250 micrometers. The observations can be explained in a qualitative manner by postulating a pair of competing mechanisms to account for the low temperature reverse annealing seen in most boron and gallium doped silicon solar cells. Still another mechanism dominates at higher temperatures (350 C and greater) to complete this model. One of the mechanisms, defined as B, allows migrators to couple with radiation induced recombination sites thus increasing or enhancing their capture cross sections. This would tend to reduce minority carrier diffusion length. The new recombination complex is postulated to be thermally stable up to temperatures of approximately 350 C.

Scott-Monck, J. A.↗
NASA NTRS1987

Analysis of the interaction of a laser pulse with a silicon wafer - Determination of bulk lifetime and surface recombination velocity

The decay of excess minority carriers produced in a silicon wafer of thickness d by a laser pulse is analyzed. A comprehensive theory based on this analysis is presented for the determination of bulk lifetime Tau(b) and surface recombination velocity S. It is shown that, starting with an exponential spatial profile, the carrier profile assumes a spatially symmetrical form after approximately one time constant of the fundamental mode of decay. Expressions for the spatial average of the carrier density as a function of time are derived for three temporal laser pulse shapes: impulse, square, and Gaussian. Particular attention is paid to the time constants of the fundamental and higher modes of decay. The ratios of the time constants of the higher modes to the fundamental mode, as well as the time constant of the fundamental mode, are presented over wide ranges of values of S and d. For Sd less than about 40 sq cm/s, a two-wafer method is developed to determine Tau(b) and S; it is also shown that the requirement of d/Tau(b) greater than about 20S is sufficient to adequately guarantee that the asymptotic value of the instantaneous observed lifetime differs from the bulk lifetime by no more than 10 percent.

Luke, Keung L.↗
NASA NTRS1971

Effects of positive ion implantation into antireflection coating of silicon solar cells

The state of technological development of Si solar cells for highest obtained efficiency and radiation resistance is summarized. The various theoretical analyses of Si solar cells are reviewed. It is shown that factors controlling blue response are carrier diffusion length, surface recombination, impurity concentration profile in surface region, high level of surface impurity concentration (degeneracy), reflection coefficient of oxide, and absorption coefficient of Si. The theory of ion implantation of charge into the oxide antireflection coating is developed and side effects are discussed. The experimental investigations were directed at determining whether the blue response of Si solar cells could be improved by phosphorus ion charges introduced into the oxide antireflection coating.

Middleton, A. E.↗
NASA NTRS1975

Summary of theoretical and experimental investigation of grating type, silicon photovoltaic cells

Theoretical and experimental aspects are summarized for single crystal, silicon photovoltaic devices made by forming a grating pattern of p/n junctions on the light receiving surface of the base crystal. Based on the general semiconductor equations, a mathematical description is presented for the photovoltaic properties of such grating-like structures in a two dimensional form. The resulting second order elliptical equation is solved by computer modeling to give solutions for various, reasonable, initial values of bulk resistivity, excess carrier concentration, and surface recombination velocity. The validity of the computer model is established by comparison with p/n devices produced by alloying an aluminum grating pattern into the surface of n-type silicon wafers. Current voltage characteristics and spectral response curves are presented for cells of this type constructed on wafers of different resistivities and orientations.

Chen, L. Y.↗
NASA NTRS1980

Solar cells and modules from dentritic web silicon

Some of the noteworthy features of the processes developed in the fabrication of solar cell modules are the handling of long lengths of web, the use of cost effective dip coating of photoresist and antireflection coatings, selective electroplating of the grid pattern and ultrasonic bonding of the cell interconnect. Data on the cells is obtained by means of dark I-V analysis and deep level transient spectroscopy. A histogram of over 100 dentritic web solar cells fabricated in a number of runs using different web crystals shows an average efficiency of over 13%, with some efficiencies running above 15%. Lower cell efficiency is generally associated with low minority carrier time due to recombination centers sometimes present in the bulk silicon. A cost analysis of the process sequence using a 25 MW production line indicates a selling price of $0.75/peak watt in 1986. It is concluded that the efficiency of dentritic web cells approaches that of float zone silicon cells, reduced somewhat by the lower bulk lifetime of the former.

Campbell, R. B.↗
NASA NTRS1985

Some practical considerations for economical back contact formation on high efficiency solar cells

The back contact can detract from solar cell performance in a number of ways: high recombination, barrier, photovoltaic, minority carrier collection, resistance. These effects may act in a nonuniform fashion over the cell area, and complicate the analysis of photovoltaic performance aimed at a better understanding of the effects of device geometry and material and/or processing parameters. The back contact is tested by reproducing it on both sides of a substrate. The objective is to find a back contact which performs well as a back contact, can be applied cheaply to large area solar cells, fits well into a practical process sequence, does not introduce structural damage or undesirable impurities into the silicon substrate, is compatible with an effective front contact technology, permits low temperature solder contacting, adheres well to silicon, and is reliable.

Lesk, I. A.↗
NASA NTRS1985

Experimental study of the minority-carrier transport at the polysilicon-monosilicon interface

This paper presents the results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contacts. Polysilicon contacts were deposited and heat treated at different conditions. The electrical properties were measured using p-n junction test structures that are much more sensitive to the contact properties than are bipolar transistors. A simple phenomenological model was used to correlate the structural properties with electrical measurements. Possible transport mechanisms are examined and estimates are made about upper bounds on transport parameters in the principal regions of the devices. The main conclusion of this study is that the minority-carrier transport in the polycrystalline silicon is dominated by a highly disordered layer at the polysilicon-monosilicon interface characterized by very low minority-carrier mobility. The effective recombination velocity at the n(+) polysilicon-n(+) monosilicon interface was found to be a strong function of fabrication conditions. The results indicate that the recombination velocity can be much smaller than 10,000 cm/s.

Neugroschel, A.↗
NASA NTRS1985

A possible radiation-resistant solar cell geometry using superlattices

A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.

Goradia, C.↗
NASA NTRS1985

A proposed GaAs-based superlattice solar cell structure with high efficiency and high radiation tolerance

A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their being across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.

Goradia, Chandra↗
NASA NTRS1986

Identification of some key parameters limiting the performance of high-efficiency silicon solar cells

This paper presents, for the first time, a detailed sensitivity analysis of key cell parameters on silicon-cell efficiency by incorporating advanced solar cell physics in a sophisticated numerical simulation program. It delineates the true physical barriers to obtaining a high-efficiency silicon solar cell. Specific parameters presently limiting cell efficiency are identified to be the minority carrier lifetime and the recombination velocities at the front and back surfaces. Practical cell efficiencies in the vicinity of 22 percent are estimated to be attainable by using good quality silicon crystal and substantially reducing surface recombination velocities.

Mokashi, Anant R.↗
NASA NTRS1988

Multijunction upper subcell cascade photovoltaics for space applications

A new class of cascade high-efficiency photovoltaics designed for space-based applications is proposed. The design improves upper subcell performance and avoids electrical and optical losses associated with an intercell ohmic contact. Multijunction upper subcells reduce bulk recombination of photogenerated minority carriers by decreasing the average collection distance, yielding improved spectral response and radiation tolerance. A three-terminal design is employed which circumvents the need for a monolithic intercell contact and, thus, the losses associated with such a contact. Problems related to array interconnection of three-terminal devices may be solved by creating a two-terminal cell from complementary pairs (n-p-n and p-n-p) of three-terminal cells. Simulations of lattice-matched AlGaAs-GaAs and lattice-mismatched AlGaAs-InGaAs cascade cells show that one-sun AM0 efficiencies in excess of 26 and 28 percent, respectively, are possible.

Educato, J. L.↗