Light microprobe investigation of Cu2S-CdS heterojunctions
Minority carrier diffusion lengths on sides of copper sulfide-cadmium sulfide heterojunctions measured by light microprobes
Bube, R. H.↗
SEARCH · Search NASA
Results for “Carrier diffusions”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Effects of positive ion implantation into antireflection coating of silicon solar cells
The state of technological development of Si solar cells for highest obtained efficiency and radiation resistance is summarized. The various theoretical analyses of Si solar cells are reviewed. It is shown that factors controlling blue response are carrier diffusion length, surface recombination, impurity concentration profile in surface region, high level of surface impurity concentration (degeneracy), reflection coefficient of oxide, and absorption coefficient of Si. The theory of ion implantation of charge into the oxide antireflection coating is developed and side effects are discussed. The experimental investigations were directed at determining whether the blue response of Si solar cells could be improved by phosphorus ion charges introduced into the oxide antireflection coating.
Middleton, A. E.↗
Photoemission from cesium-oxide-activated InGaAsP.
Zinc-doped InGaAsP quaternary III-V material of the proper composition range shows superior photoemission properties to either InGaAs or InAsP ternary material. The minority-carrier diffusion length in the quaternary material is at least as long as that in InAsP and much longer than observed in InGaAs. The barrier height at the InGaAsP-Cs2O interface is lowered by cooling, giving increased electron escape probability and new highs in quantum efficiency over a wide wavelength range. For example, a 1.06-micron quantum efficiency of 7.5%/incident photon was observed at -90 C.
James, L. W.↗
Optical damage and internal fields in pyroelectrics.
The physical conditions under which the models of optical damage in pyroelectrics suggested by Johnston (1970) and by Amodei (1971) might be valid are described. Whether the zero-internal-field final state described by Johnston or the no-current-flow steady state of Amodei can be reached depends on the pattern of excitation and the dynamics of the damage process. In view of the small carrier diffusion lengths, the one-dimensional models generally used may not be entirely satisfactory for investigation of dynamics.
Wood, V. E.↗
Low-high junction theory applied to solar cells
Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open circuit voltage and improved radiation resistance. Several analytical models for open circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero SRV case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells. Detailed descriptions and derivations for the models are included. The correspondences between them are discussed. This modeling suggests that the meaning of minority carrier diffusion length measured in BSF cells be reexamined.
Godlewski, M. P.↗
Temperature dependence of damage coefficient in electron irradiated solar cells
Measurements of light-generated current vs cell temperature on electron-irradiated n/p silicon solar cells show the temperature coefficient of this current to increase with increasing fluence for both 10-ohm and 20-ohm cells. A relationship between minority-carrier diffusion length and light-generated current was derived by combining measurements of these two parameters: vs fluence at room temperature, and vs cell temperature in cells irradiated to a fluence of 1 x 10 to the 15th power e/sq cm. This relationship was used, together with the light-generated current data, to calculate the temperature dependence of the diffusion-length damage coefficient. The results show a strong decrease in the damage coefficient with increasing temperature in the range experienced by solar panels in synchronous earth orbit.
Faith, T. J.↗
Solar cells for terrestrial applications
The power efficiency curves of photovoltaic solar cells were investigated as a function of the forbidden energy gap (E sub g) and the current-voltage characteristic of the diode. Minority carrier injection, depletion layer recombination, and interface recombination terms were considered in models for the I-V characteristic. The collection efficiency for photons with energy between (E sub g) and an upper energy cutoff (E sub w) was assumed to be 100% and zero otherwise. Results are presented in terms of a single parameter related to the ratio of depletion layer width and minority carrier diffusion length. It was found that increasing depletion layer recombination shifts the efficiency curves to larger values of the energy without changing the shape of the efficiency curve appreciably. It is believed that similar results would be obtained whenever the quality factors in the exponential energy gap and forward bias terms are equal.
Chernow, F.↗
High efficiency graded band-gap Al/x/Ga/1-x/As-GaAs p-on-n solar cell
A theoretical analysis of p-on-n (p/n) graded band-gap Al/x/Ga/1-x/As-GaAs solar cells including all practical energy loss mechanisms predicts air mass zero efficiencies of 17.3%. The energy losses include those due to spectral reflection, surface, bulk and junction recombination currents, and series resistance. The device consists of a layer of p-type Al/x/Ga/1-x/As 3.5-micron thick on top of an n-type GaAs substrate. The graded band-gap is achieved by decreasing x from 0.35 at the surface to zero at the junction. The same structure without the graded Al concentration, no longer an optimum device, has an efficiency of 10.4%. The primary function of the graded band-gap material is the reduction of surface and bulk recombination losses in the surface layer by a built-in electric field. A comparison of the p/n structure with an optimized n/p structure indicates that the latter has a slightly higher efficiency (17.7%) for assumed minority carrier diffusion lengths and surface recombination velocity.
Hutchby, J. A.↗
Theoretical optimization and parametric study of n-on-p Al/x/Ga/1-x/As-GaAs graded band-gap solar cell
A comprehensive theoretical model of the graded band-gap Al(x)Ga(1-x)As-GaAs solar cell is used to optimize the n-on-p cell. The model includes power losses due to surface, bulk, and junction minority-carrier recombination, series resistance, and photon reflection from an SiO antireflection coating of optimum thickness. The optimized cell has a junction depth/graded band-gap layer thickness of 1.0 micron, respective donor and acceptor concentrations of 4 x 10 to the 17th power and 2 x 10 to the 17th power per cu cm, and a surface AlAs mode fraction of x = 0.35. The optimized graded band-gap cell has an air-mass-zero efficiency of 17.7% (not corrected for a 13% front surface contact area) and is shown to be less sensitive than a similar n-on-p GaAs cell to material degradation in the form of decreased minority-carrier diffusion lengths and increased surface-recombination velocity
Hutchby, J. A.↗
Application of the SEM to the measurement of solar cell parameters
Techniques are described which make use of the SEM to measure the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.
Weizer, V. G.↗
Developments in vertical-junction silicon solar cells
Non-reflective vertical junction silicon cells provide high conversion efficiency radiation-resistant solar cells. New techniques of oxidation growth and the use of photolithography enable the use of an orientation dependent etch producing grooves 5 to 10 microns wide over 100 microns deep. These silicon wafers are then processed into solar cells with all of the processes performed at temperatures compatible with producing high efficiency solar cells. Most of the photogenerated carriers are created in the walls where they are within a few microns of the collecting junction. Consequently, degradation of carrier diffusion length due to radiation has a considerably reduced effect on collection efficiency. These 2 cm x 2 cm vertical junction silicon solar cells have exceeded 13% AMO efficiency and have shown superior radiation resistance.
Lindmayer, J.↗
Dip-coating process: Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project
The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. The past quarter demonstrated significant progress in several areas. Seeded growth of silicon-on-ceramic (SOC) with an EFG ribbon seed was demonstrated. Different types of mullite were successfully coated with silicon. A new method of deriving minority carrier diffusion length, L sub n from spectral response measurements was evaluated. ECOMOD cost projections were found to be in good agreement with the interim SAMIS method proposed by JPL. On the less positive side, there was a decrease in cell performance which we believe to be due to an unidentified source of impurities.
Zook, J. D.↗
Laser-zone growth in a Ribbon-To-Ribbon (RTR) process. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project
The Ribbon-to-Ribbon (RTR) approach to silicon ribbon growth is investigated. An existing RTR apparatus is to be upgraded to its full capabilities and operated routinely to investigate and optimize the effects of various growth parameters on growth results. A new RTR apparatus was constructed to incorporate increased capabilities and improvements over the first apparatus and to be capable of continuous growth. New high power lasers were implemented and this led to major improvements in growth velocity -- 4 inch/min. growth has been demonstrated. A major step in demonstration of the full feasibility of the RTR process is reported in the demonstration of RTR growth from CVD polyribbon rather than sliced polyribbon ingots. Average solar cell efficiencies of greater than 9% and a best cell efficiency of 11.7% are reported. Processing was shown to provide a substantial improvement in material minority carrier diffusion length. An economic analysis is reported which treats both the polyribbon fabrication and RTR processes.
Gurtler, R. W.↗
Heat exchanger-ingot casting/slicing process, phase 1: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project
A controlled growth, heat-flow and cool-down process is described that yielded silicon with a high degree of single crystallinity. Even when the seed melted out, very large grains formed. Solar cell samples made from cast material yielded conversion efficiency of over 9%. Representative characterizations of grown silicon demonstrated a dislocation density of less than 100/sq cm and a minority carrier diffusion length of 31 micron. The source of silicon carbide in silicon ingots was identified to be from graphite retainers in contact with silica crucibles. Higher growth rates were achieved with the use of a graphite plug at the bottom of the silica crucible.
Schmid, F.↗
Silicon Solar Cell Process Development, Fabrication and Analysis
Ribbon to Ribbon (RTR) solar cells processed from polycrystalline feedstock showed maximum AMO efficiency of 5.6%. Solar cells from single crystalline feedstock showed slightly higher efficiency than those from polycrystalline feedstock, indicating maximum efficiency of about 6.6% with SiO AR coating. Single crystalline control cells gave 11-12% AMO efficiencies demonstrating that the poor performance of the RTR solar was due to the low quality of material itself. Dendritic web solar cells from the standard process showed maximum AMO efficiency of 9.8% while efficiency of control solar cells were around 11-12%. Web solar cells from back surface field (BSF) process indicated maximum AMO efficiency of 10.9%. Some improvement in open circuit voltage was noticed from the BSF process. Small light spot scanning experiments were carried out on the solar cells from Wacker Silso, EFG, RTR, and dendritic web ribbons. Photoresponse results provided information on localized cell performance and grain size in polycrystalline material, and agreed quite well with the cell performance data, such as efficiency, minority carrier diffusion length, and spectral response.
Yoo, H. I.↗
Effect of dopants on annealing performance of silicon solar cells
The optimum annealing parameters of time and temperature for producing cell output recovery were established. Devices made from gallium doped and boron doped silicon were investigated. The cells ranged in resistivity from 0.1 to 20 ohm-cm and in thickness from 50 to 250 micrometers. The observations can be explained in a qualitative manner by postulating a pair of competing mechanisms to account for the low temperature reverse annealing seen in most boron and gallium doped silicon solar cells. Still another mechanism dominates at higher temperatures (350 C and greater) to complete this model. One of the mechanisms, defined as B, allows migrators to couple with radiation induced recombination sites thus increasing or enhancing their capture cross sections. This would tend to reduce minority carrier diffusion length. The new recombination complex is postulated to be thermally stable up to temperatures of approximately 350 C.
Scott-Monck, J. A.↗
Forward-bias capacitance and current measurements for determining lifetimes and band narrowing in p-n junction solar cells
A new method is described and illustrated for determining the minority-carrier diffusion length and lifetime in the base region of p-n junction solar cells. The method requires only capacitance measurements at the device terminals and its accuracy is estimated to be + or - 5%. It is applied to a set of silicon p-n junction devices and the values of the diffusion lengths agree with those obtained using the current response to X-ray excitation but disagree with those obtained by the OCVD method. The reasons for the relative inaccuracy of OCVD applied to silicon devices are discussed. The capacitance method includes corrections for a two-dimensional fringing effects which occur in small area devices. For a device having highly-doped base region and surface (emitter) layer, the method can be extended to enable the determination of material properties of the degenerately doped surface layer. These material properties include the phenomenological emitter lifetime and a measure of the energy band-gap narrowing in the emitter. An alternate method for determining the energy band-gap narrowing from temperature dependence of emitter current is discussed and demonstrated.
Neugroschel, A.↗
Short circuit current changes in electron irradiated GaAlAs/GaAs solar cells
Heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells with junction depths of 0.8, 1.5, and 4 microns were irradiated with 1 MeV electrons. The short-circuit current for the 4 micron junction depth cells is significantly reduced by the electron irradiation. Reduction of the junction depth to 1.5 microns improves the electron radiation resistance of the cells while further reduction of the junction depth to 0.8 microns improves the stability of the cells even more. Primary degradation is in the blue region of the spectrum. Considerable recovery of lost response is obtained by annealing the cells at 200 C. Computer modeling shows that the degradation is caused primarily by a reduction in the minority carrier diffusion length in the p-GaAs.
Walker, G. H.↗