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At least 73 records · Page 4

Nanotesla Magnetometry with the Silicon Vacancy in Silicon Carbide

Silicon carbide is a promising host material for spin-defect-based quantum sensors owing to its commercial availability and established techniques for electrical and optical microfabricated device integration. The negatively charged silicon vacancy is one of the leading spin defects studied in silicon carbide owing to its near-telecom photoemission, high spin number, and nearly temperature-independent ground-state zero-field splitting. We report the realization of nanotesla shot-noise-limited ensemble magnetometry based on optically detected magnetic resonance with the silicon vacancy in 4H silicon carbide. By coarsely optimizing the anneal parameters and minimizing power broadening, we achieve a sensitivity of 50 nT/√Hz and a theoretical shot-noise-limited sensitivity of 3.5 nT/√Hz. This is accomplished without utilizing complex photonic engineering, control protocols, or applying excitation powers greater than a watt. This work demonstrates that the silicon vacancy in silicon carbide provides a low-cost and simple approach to quantum sensing of magnetic fields.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Corrosion of novel reactive silver ink and commercial silver-based metallizations in diluted acetic acid

Silver-based metallizations in photovoltaic modules are susceptible to corrosion by acetic acid generated in ethylene vinyl acetate encapsulated modules, resulting in power losses over time. Here, three silver-based metallizations are exposed to diluted acetic acid, in concentrations representative of that found in field-exposed modules. Compositional, morphological, and structural changes of the metallizations are studied over 3000 h of exposure to diluted acetic acid using Raman spectroscopy mapping, X-ray diffraction, and scanning electron microscopy. The three metallizations studied are: 1) a commercial high-temperature fire-through Ag paste, commonly used for Si diffused junction solar cells; 2) a commercial low-temperature paste normally used for silicon heterojunction cells; and 3) a novel low-temperature reactive silver ink shown to be suitable for photovoltaic applications. We find distinct corrosion rates for the high-temperature silver paste and reactive silver ink in the presence of diluted acetic acid. However, the low-temperature silver paste appears to be more corrosion resistant, likely due to a polymer layer that protects the silver particles.

36 MATERIALS SCIENCE↗

Mechanically robust and superior conductive n-type polymer binders for high-performance micro-silicon anodes in lithium-ion batteries

Compared with nanostructured silicon (Si), the Si microparticle (SiMP) has more commercial prospects due to its low cost. However, SiMPs suffer from unavoidable fracture during electrochemical cycling owing to their significant volume change. Here we develop a series of novel n-type conductive polymer binders (CPBs) for SiMP anodes in lithium-ion batteries owing to their superior properties. Extraordinary electrochemical performance of cells with such unique binders could be achieved, which is because these designed polymers contain electron-withdrawing oxadiazole ring groups and easily ionizable sulfonate polar groups, exhibiting excellent ionic conductivity, outstanding wettability to the electrolyte, and improved electronic conductivity after doping. Moreover, the coexistence of rigid and flexible chains enables them to have exceptional strength and ductility. Besides, a unique electrochromic approach has been utilized to investigate the energy gap of the CPBs in n-doping states. The ionic and electronic conductivities of prepared CPBs in an eigenstate and n-doping state have been systematically studied by the electrochemical method, filling the current research gap in this field. Due to the high conductivity of b-POD, the capacity of SiMPs (4200 mA h g –1 ) can be almost entirely released during the first cycle of discharge, while the SiMP anodes prepared with the PAALi or CMC binder show a much lower initial capacity. Here, the high conductivity of b-POD also endows it with better cycling performance than non-conductive binders especially at high current densities, demonstrating its excellent fast-charging ability. More essentially, this work provides polymer binders without any intricate structural designs to obtain high-performance SiMP batteries, significantly enhancing their practical applications.

25 ENERGY STORAGE↗

Aluminum hydroxide, bayerite, boehmite, and gibbsite ToF-SIMS spectra in the negative ion mode. I

We report time-of-flight secondary ion mass spectrometry (ToF-SIMS) was performed for boehmite (AOH-60) and its potential products of oxidation including pseudo-boehmite (AOH-180), α- and γ-Al 2 O 3 , and α- and γ-Al(OH) 3 . Since boehmite is often incorporated on cladding materials to prevent corrosion, surface analysis techniques are performed to determine the amount of oxidation present. This ToF-SIMS spectral library is of significance because it includes boehmite and its potential oxidation products (i.e., aluminum oxide and hydroxide), which can be used to compare to spectra obtained for real-world samples containing boehmite. Furthermore, ToF-SIMS is often used as a complementary technique to x-ray photoelectron spectroscopy due to its surface sensitivity and ability to compare spectra via a multivariate analysis, therefore establishing that the molecular signatures of boehmite and relevant compounds are essential for peak identification. The SIMS spectra shown are acquired from commercially available powders, which were deposited onto a silicon wafer substrate via liquid slurry drop casting. This library of SIMS mass spectra will serve as a comparison of boehmite [γ-AlO(OH)], pseudo-boehmite [AlOOH∙nH 2 O], α- and γ-Al 2 O 3 aluminum oxide, and α- and γ-Al 2 O 3 aluminum hydroxide in the negative ion mode, which compliments those reported in the positive ion mode.

36 MATERIALS SCIENCE↗

Epitaxy of Beta-Ga2O3 on Highly-Offcut (Greater than 10 Degrees) Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction.1 These films show step-flow growth from (-201) step-edges and high electron mobility. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (4.8 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe 100% reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3.

36 MATERIALS SCIENCE↗

Fast Growth of Ga2O3 on Highly Offcut (100)-Oriented Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. More importantly, the impact ionization coefficients along the [100] direction are low, leading to the highest possible critical fields. This is advantageous compared to the current state of the art, (001), due to reduced surface defects and increased possible breakdown voltage. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption, and on-axis (100) growth easily forms twin domains. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction. These films show step-flow growth from (20-1) step-edges and high electron mobility due to suppressed twins. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (>5 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3 and critical breakdown field in Schottky barrier diodes comparable with state-of-the-art (001) Ga2O3 without edge termination.

36 MATERIALS SCIENCE↗

Evaluation of silicon and indium gallium arsenide photodiodes as direct timing detectors for pulsed x-ray systems

Benchtop pulsed x-ray systems are commonly used to record dynamic material data on the order of nanoseconds, but pulse timing is often difficult to accurately determine. This study demonstrates that commercially available photodiodes can be used effectively for direct x-ray pulse detection without the need for visible light scintillators. X-ray pulses from four commercially available flash x-ray systems were quantified using one silicon and two indium gallium arsenide (InGaAs) photodiodes. The measured InGaAs pulse durations were strongly dependent on radiation dose in the non-linear operating regime, so the photodiodes were shielded to operate below the 2.5 V non-linear regime threshold. The average pulse duration and pulse arrival time jitter of the photodiodes for each x-ray source were within several nanoseconds with the exception of two sets of measurements that were affected by low instrument sensitivity and electrical noise. These results show that InGaAs photodiodes can be used as effective and repeatable stand-alone timing diagnostics for x-ray pulses as short as 20 ns or less.

47 OTHER INSTRUMENTATION↗

Recovery of Glass and Silicon Solar Cells from Si-Modules Through Laser Processing

This study demonstrates an innovative and environmentally friendly laser-based approach for the efficient recovery of glass and silicon solar cells, allowing the recycling of photovoltaic modules. The methodology involves the use of a high-power pulsed laser beam focusing at various interfaces within the modules. Specifically, the delivery of ultra-short pulse laser energy at the interfaces of glass and polymeric encapsulants, as well as at the encapsulants and silicon solar cells, facilitates the debonding of polymers from both glass and silicon cell surfaces. The debonding occurs through photothermal, ablation, chemical modification, and localized heat generation. The research successfully demonstrates the recovery of glass from commercial mini solar modules of size 11.5 x 6.8 cm 2 and a silicon wafer of size 3.0x1.6 cm 2 . Ongoing efforts aim to extend the effectiveness of this laser-based methodology to comprehensively recycle larger-size components. This innovative approach holds promise for addressing environmental concerns associated with the disposal of solar modules, contributing to sustainable practices in the renewable energy sector.

glass↗

Technoeconomic Analysis of Dye Sensitized Solar Cells (DSSCs) with WS 2 /Carbon Composite as Counter Electrode Material

Exploration of clean and renewable energy materials is necessary due to the coming energy crisis and environmental problems. Solar energy is one of the favorable energy sources because of the continuous energy reservoir and its affluence. Silicon-based solar devices are expensive due to their complicated production process, which limits this technology for urban and other commercial applications. Among the third generation of solar cells, Dye-Sensitized Solar Cells (DSSCs) have attracted widespread attention as potential cost-effective alternatives to silicon-based solar cells. In this paper, the commercializing potential of the DSSCs is investigated. A module is introduced where the materials, equipment, and distribution of direct manufacturing costs are calculated. The manufacturing costs and the Levelized Cost of Energy (LCOE) of these DSSCs for a system lifetime of 25 years were determined to be USD 22.40 per m 2 and USD 0.0438 per kWh and the module price of this technology is USD 0.18 per W and the total installed system cost is USD 0.88 per W in Kansas which suggest that this PV technology could challenge other leading PV technologies.

14 SOLAR ENERGY↗

Mitigation of rapid capacity decay in silicon-LiNi 0.6 Mn 0.2 Co 0.2 O 2 full batteries

Silicon (Si)-based materials have been considered as the most promising anode materials for high-energy-density lithium-ion batteries because of their higher storage capacity and similar operating voltage, as compared to the commercial graphite (Gr) anode. But the use of Si anodes including silicon-graphite (Si-Gr) blended anodes often leads to rapid capacity decay in Si-Gr/LiNixMnyCo z O 2 (x+y+z=1) full cells, which has been attributed to surface instability of the Si component. In addition to stabilizing the surface, this work investigates the potential of the Si-Gr blended anodes in a full-cell configuration and its impact on the capacity contribution from active components. Using dQ/dV plots of the full cells, a powerful but simple-to-implement differential potential approach is developed to decouple the capacity contribution and degradation from the graphite and silicon components. Data collected from three-electrode cells confirm the results from the differential potential approach, which suggests a voltage slippage to a higher voltage at the blended anode side. Additionally, the voltage slippage causes a reduced utilization of the Gr component and exacerbates side reactions between the Si-Gr anode and carbonate electrolytes. Furthermore, based on these failure mechanisms, we adopted a mitigation strategy to tune the open circuit voltage of the prelithiated anode while stabilizing the surface. As a result, the full cells with the modified Si-Gr anodes (mass loading, 2.5 mAh/cm 2 ) offer a highly reversible full-cell energy density of 390 Wh/kg (based on the mass of both anode and cathode materials in a full cell) with a cycling CE of 99.9% over 200 cycles.

25 ENERGY STORAGE↗

Boron-hyperdoped silicon for the selective oxidative dehydrogenation of propane to propylene

Boron containing catalysts have great potential in the oxidative dehydrogenation of propane. Herein, a series of 15, 25 and 42 at% boron-hyperdoped silicon catalysts synthesized by laser pyrolysis was studied. Here, boron-hyperdoped silicon samples showed >6 times higher propylene productivity than commercial h-BN at 450 °C.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Li-Ion Battery Electrode Contact Resistance Estimation by Mechanical Peel Test

Li-ion battery electrode electronic properties, including bulk conductivity and contact resistance, are critical parameters affecting cell performance and fast-charge capability. Contact resistance between the coating and current collector is often the largest electronic resistance in an electrode and is affected by chemical, microstructural, and interfacial variations. Direct measurements of contact resistance and bulk conductivity have proven to be challenging. In their absence, a mechanical electrode peel test is often used to compare adhesion and electrical contact resistance. However, using a micro-flexible-surface probe, contact resistance can be directly determined. Here, this work compares contact resistance and mechanical peel strength of multiple commercial-grade HE5050 and NCM523 cathodes and graphite and silicon anodes. It was found that peel strength correlates well with contact resistance in a carefully curated data set (p < 0.05) and in some situations may be a good metric to estimate electrical properties. However, there were distinct outliers in the data set, indicating that peel strength may not accurately reflect electrical properties when there is significant variation in electrode composition. These results illustrate the value of the micro-flexible-surface probe in quantifying contact resistance and bulk conductivity to better understand how battery composition and processing steps affect microstructure and resulting cell performance.

25 ENERGY STORAGE↗

Hydrothermal Corrosion of First-Generation Dual-Purpose Coatings on Silicon Carbide for Accident-Tolerant Fuel Cladding

In this study, four different commercial coatings, TiN, Cr, CrN, and Cr/CrN (multilayer) were deposited by physical vapor deposition (PVD) on high resistivity chemical vapor deposited (CVD) SiC for the dual purpose of corrosion mitigation and fission gas hermeticity. The coatings were exposed for up to 2600 hours in flowing high temperature (288-350°C), high purity, liquid water with dissolved hydrogen (0.15-3ppm) or dissolved oxygen (1-2ppm). The Cr/CrN coatings did not adhere well and spalled quickly during exposure. In oxygenated conditions, none of the coatings were protective . CrN coatings spalled preferentially at defect sites, but reacted slowly enough in the absence of defects to potentially be chemically protective. TiN coatings fully oxidized within a few hundred hours and spalled. In hydrogen, all the coatings were chemically stable. Coating failures were identified and attributed to localized spallation, potentially related to coating defects. Coating improvements are recommended to reduce spallation and improve coating protection for future generations of dual-purpose coatings.

36 MATERIALS SCIENCE↗

Quantifying lithium loss in amorphous silicon thin-film anodes via titration-gas chromatography

Silicon with a high theoretical capacity (3,579 mAh/g) is a promising anode candidate for lithium-ion batteries. However, commercialization is still impeded by low Coulombic efficiency, caused by solid electrolyte interphase (SEI) formation and trapped lithium (Li)-silicon (Si) alloy during repeated volume change. Quantifying capacity losses from each factor is crucial to formulate rational design strategies for further improvement. In this work, titration-gas chromatography and cryogenic transmission electron microscopy are applied to characterize the evolution of trapped Li-Si alloy and SEI growth in a silicon thin-film anode. It is found that continuous growth of the SEI is the dominant factor for lithium inventory loss during cycling, with only a marginal increase in trapped Li-Si alloy. This study offers a quantitative approach to differentiate Li in the SEI from trapped Li in Li-Si alloy through a silicon thin-film anode, providing unique insights into identifying critical bottlenecks for developing Si anodes.

25 ENERGY STORAGE↗

Resin chemistry and particle size influence on stereolithography with silicon carbide

Stereolithography (SLA) is an established process able to produce high resolution polymer parts with complex geometries. Silicon carbide (SiC) has uses in a variety of applications, but traditionally was difficult to manufacture into complex geometries. There have been advances in producing SiC through SLA using a SiC-derived ceramic such as silicon oxycarbide (SiOC). In this study, a slurry using a commercially available resin as the base material with additional modifiers was investigated to create a SiC slurry ready for pressureless sintering. The effects of photoinitiator, dispersant and a bimodal distribution of SiC particle sizes was studied using a design of experiments (DOE). A slurry with a bimodal distribution of 70 % coarse and 30 % fine SiC powder at 40 % solids loading by volume was prepared and successfully printed. Rheology measurements show the slurry to have viscoelastic shear thinning behavior below the recommended 1000 Pas necessary for printing. Printing parameters for the new material on a commercially available SLA printer were studied parametrically. The laser marking speeds found to print the slurry was 260 mm/s and 130 mm/s. A slurry and printing parameters were determined to produce a green part with a proposed debinding cycle.

Herd, Tien [ORNL]↗

Low-cost Manufacturing of Semitransparent CdTe PV for Building Integration

Solar has been demonstrated to be a robust renewable energy source, constituting a significant portion of the United States’ renewable energy portfolio. Despite its growth across residential, commercial, and utility sectors over the past decades, it remains a small fraction of the overall energy infrastructure. Challenges persist in fully harnessing solar power to meet the nation's escalating energy demands. Among these challenges lies the hurdle of efficiently distributing large quantities of solar-generated electricity to densely populated regions with the highest energy needs and costs. Traditional utility-scale arrays demand extensive land, a luxury often unavailable in metropolitan areas. Consequently, installations must be situated at a distance, necessitating additional infrastructure for electricity transmission to service areas. While metropolitan landscapes lack sprawling open spaces suitable for conventional utility-scale solar deployment, they offer a different resource: windows. Semitransparent photovoltaic window technology has the potential to not only bolster the grid's energy capacity, but to also provide HVAC and economic advantages to building owners. However, commercial availability of building-integrated photovoltaic windows remains limited. Silicon based photovoltaics currently dominate the solar market but adapting them for use in windows poses a variety of engineering and economic challenges such as relatively low power density, high costs associated with custom manufacturing, and aesthetic considerations. Addressing these challenges, this project explored the use of laser ablation patterning to manufacture cost-effective, high-efficiency, semitransparent Cadmium Telluride photovoltaic modules. Results showcased the potential of this methodology in developing photovoltaic windows and other innovative semitransparent PV applications. The ablation manufacturing technique demonstrated great versatility in achieving different patterns and levels of visible light transmission, and the power loss due to ablation was nearly directly proportional to the amount of material removed. Furthermore, the manufacturing process for Cadmium Telluride modules already has established advantages in material and energy efficiency, and the conversion of a standard submodule to semitransparent essentially requires a single additional process step, ensuring scalability. It is important to note that during this work, Toledo Solar experienced substantial organizational upheaval stemming from a lawsuit with First Solar. An external investigation led the board of directors to remove and replace the previous management team, and several other members of the staff elected to depart as well, including the then acting Principle Investigator on this project. The remaining Toledo Solar team attempted to recover from the disruption and deliver on the remaining tasks, but upon its own review, the Department of Energy ruled the project in default and terminated the contract in December 2023.

14 SOLAR ENERGY↗

Scalable Manufacturing of Efficient Perovskite/Silicon Tandem Modules

Crystalline-Si (c-Si) technology produces excellent solar cells with conversion efficiencies of up to 26.7%—nearly their practical limit of 27%—and has been commercialized extensively to produce panels below $\$0.40$/W. Techno-economic analysis shows that module efficiency will continue to be a primary cost driver because of high balance-ofsystems costs, and there is no path to higher efficiencies with single-junction silicon cells. In this project, three research teams from University of North Carolina, Arizona State University and National Renewable National Laboratory worked together to develop perovskite-silicon tandem cells with a high throughput process which can handle 5000 wafers per hour, enabled by very low added CAPEX of ~$20k for a doctor-blade coater. This can potentially increase the module efficiency to 30% (with grid) with small increase of cost, which will drive down the cost of silicon modules to be at least 16% cheaper than present silicon PERC modules. We also explored the alternative narrow bandgap perovskites as silicon replacement for all perovskite tandem cells. This project has substantially advanced the progress of solution-process perovskitessilicon tandem solar cells and perovskite-perovskite tandem solar cells with many inventions and discoveries, evidenced by 18 publications and 6 invention disclosures. Several notable examples include 1) we developed the new idea of small pyramid in combination with solution grown perovskites and demonstrated record-efficiency of 28.5% for 1 cm2 on textured silicon bottom cells and 25.2% for 24 cm2 on chemically etched silicon bottom cells for perovskite-silicon tandem cells. 2) We developed perovskite ink that can coat perovskites onto texture silicon without voids;, and new device structure to enhance the yield of fabrication by reducing shunting 3) We identified the origin of open circuit voltage on mixed halide wide bandgap perovskites, and came with a solution for this problem, reducing the voltage loss to a record small value, which can potentially push the perovskite-silicon tandem cell efficiency to over 31%; 4) We have developed efficient alternative low bandgap semiconductors, i.e. gradient-doped Sn based perovskites by Ba ions, new oxide hole transport layers which increase the efficiency of perovskite/perovskite tandem cells reached record efficiency of 26.3%; 5) We developed bifacial perovskite/perovskite tandem cells by overcoming contacts issues and regaining light absorption, further boosting the equivalent efficiency to 29.3% under 1 sun illumination with 30% albedo light; 6) We developed the first all perovskite tandem module fabricated in air by discovery a combination of oxidization and reduction couples, yield an aperture efficiency of 21.6% for all perovskite mininodules, exceeding that of single junction perovskite minimodules. These discoveries not only accelerate the commercialization of perovskite-silicon tandem solar cells, but also provide guidance in designing other type of perovskite solar cell technologies.

14 SOLAR ENERGY↗