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Report discusses totally-automated oxidation and diffusion facility for fabricating IC's. Several innovations are demonstrated: process controller specifically designed for semiconductor processing; automatic loading system to accept wafers from air track, insert them in quartz carrier, and place carrier on paddle for insertion into furnace; automatic unloading of wafers back onto air track; and boron diffusion using diborane.
Ion beam deposition chambers used for carbon film generation were designed and constructed. Features of the developed equipment include: (1) carbon ion energies down to approx. 50 eV; (2) in suit surface monitoring with HEED; (3) provision for flooding the surface with ultraviolet radiation; (4) infrared laser heating of substrate; (5) residual gas monitoring; (6) provision for several source gases, including diborane for doping studies; and (7) growth from either hydrocarbon source gases or from carbon/argon arc sources. Various analytical techniques for characterization of from carbon/argon arc sources. Various analytical techniques for characterization of the ion deposited carbon films used to establish the nature of the chemical bonding and crystallographic structure of the films are discussed. These include: H2204/HN03 etch; resistance measurements; hardness tests; Fourier transform infrared spectroscopy; scanning auger microscopy; electron spectroscopy for chemical analysis; electron diffraction and energy dispersive X-ray analysis; electron energy loss spectroscopy; density measurements; secondary ion mass spectroscopy; high energy electron diffraction; and electron spin resonance. Results of the tests are summarized.
A totally automated facility for semiconductor oxidation and diffusion was developed using a state-of-the-art diffusion furnace and high temperature grown oxides. Major innovations include: (1) a process controller specifically for semiconductor processing; (2) an automatic loading system to accept wafers from an air track, insert them into a quartz carrier and then place the carrier on a paddle for insertion into the furnace; (3) automatic unloading of the wafers back onto the air track, and (4) boron diffusion using diborane with plus or minus 5 percent uniformity. Processes demonstrated include Wet and dry oxidation for general use and for gate oxide, boron diffusion, phosphorous diffusion, and sintering.
All beta-SiC films grown using on-axis (001) Si substrates that have been examined with transmission electron microscopy exhibit a high density of interfacial twins, stacking faults, and antiphase disorder. The antiphase boundaries can be decorated by chemical etching, sputter etching, wet oxidation, and beta-SiC growth in the presence of diborane. All traces of antiphase disorder are eliminated when the heteroepitaxial growth is carried out on vicinal (001) Si substrates that are tilted 2 deg about a 110-line axis. In addition, growth on the off-axis Si produces beta-SiC films that are significantly smoother than on-axis films. The density of stacking faults is apparently unaffected by growth on the off-axis substrates.
An efficient method for various noniterative estimates of connected triple excitations in coupled-cluster theory is outlined and related to a similar expression occurring in Moller-Plesset perturbation theory. The method is highly vectorized and capable of utilizing multiple processors on a shared-memory machine, leading to computational rates in excess of one billion floating-point operations per second on four processors of a CRAY Y-MP. Using the new procedure, the binding energies of the D(2h) diborane-type dimers of AlH3, AlH2F, AlHF2, and AlF3 have been determined to be 32, 40, 20, and 47 kcal/mol, respectively. For Al2F6, the correlation procedure includes 232 molecular orbitals and over 1.5 x 10 to the 6th single and double coupled-cluster amplitudes, effectively accounting for over 2 x 10 to the 9th connected triple excitations.
A preliminary investigation was conducted to determine the combustion characteristics of a fuel composed of 50 percent pentaborane and 50 percent JP-4 (MIL-F-5624A) by weight in a turbojet combustor. A combustor designed to fit the housing of a J33-A-23 turbojet engine was selected for convenience. The fuel was evaluated at two engine conditions simulating altitudes of 40,000 and 57,000 feet, an engine speed of 85 percent of rated rpm, and a flight Mach number of 0.6. The pentaborane blend was initially evaluated in combustors developed for pure pentaborane and diborane reported in NACA RM E53B18 and RM E52L15. The performance of the blend was unsatisfactory in these combustors. A new combustor was then developed which provided combustor efficiencies measured from 91 to 101 percent as compared with efficiencies of 92 to 94 percent previously obtained for pentaborane at comparable conditions. Additional refinements of design details are needed to obtain lower oxide deposits and a more uniform outlet temperature profile; however, the combustor is believed to incorporate some of the design principles required to obtain satisfactory over-all performance with the fuel blend investigated.
The results of an analytical investigation of the theoretical air specific impulse performance and adiabatic combustion temperatures of several possible ram-jet fuels over a range of equivalence ratios, inlet-air temperatures, and combustion pressures, is presented herein. The fuels include octane-1, 50-percent-magnesium slurry, boron, pentaborane, diborane, hydrogen, carbon, and aluminum. Thermal effects from high combustion temperatures were found to effect considerably the combustion performance of all the fuels. An increase in combustion pressure was beneficial to air specific impulse at high combustion temperatures. The use of these theoretical data in engine operation and in the evaluation of experimental data is described.
An analytical evaluation of the air and fuel specific-impulse characteristics of magnesium, magnesium octene-1 slurries, aluminum, aluminum octene-1 slurries, boron, boron octene-1 slurries, carbon, hydrogen, alpha-methylnaphthalene, diborane, pentaborane, and octene-1 is presented. While chemical equilibrium was assumed in the combustion process, the expansion was assumed to occur at fixed composition.